Patents by Inventor Guobiao Zhang

Guobiao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three-Dimensional Printed Memory
    Publication number: 20160027790
    Abstract: As technology scales, the mask cost rises sharply. The present invention discloses a three-dimensional printed memory (3D-P). It uses shared data-masks to print data. Because a shared data-mask does not contain the mask-patterns for identical mass-contents, the share of the data-mask cost on each mass-content is significantly reduced. For mass publication, the minimum feature size of the 3D-P is preferably less than 45 nm.
    Type: Application
    Filed: October 6, 2015
    Publication date: January 28, 2016
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional Memory Comprising Off-Die Address/Data Translator
    Publication number: 20150332734
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its address/data translator (A/D-translator) is located on a separate peripheral-circuit die. The A/D-translator converts at least an address and/or data between logical space and physical spaces for the 3D-array die. A single A/D-translator die can support multiple 3D-array dies.
    Type: Application
    Filed: July 19, 2015
    Publication date: November 19, 2015
    Inventor: Guobiao ZHANG
  • Three-dimensional offset-printed memory
    Patent number: 9190412
    Abstract: The present invention discloses a three-dimensional offset-printed memory (3D-oP). Compared with a conventional three-dimensional mask-programmed read-only memory (3D-MPROM), it has a lower data-mask count and thereby a lower data-mask cost. The mask-patterns for different memory levels/bits-in-a-cell are merged onto a multi-region data-mask. At different printing steps, a wafer is offset by different values with respect to said data-mask. Accordingly, data-patterns are printed into different memory levels/bits-in-a-cell from a same data-mask.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: November 17, 2015
    Assignees: HangZhou HaiCun Information Technology Co., Ltd.
    Inventor: Guobiao Zhang
  • Discrete Three-Dimensional Vertical Memory
    Publication number: 20150325273
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a peripheral-circuit die. The 3D-array die comprises a plurality of vertical memory strings. At least an off-die peripheral-circuit component for the 3D-MV arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.
    Type: Application
    Filed: July 19, 2015
    Publication date: November 12, 2015
    Inventor: Guobiao ZHANG
  • Field-Repair System and Method
    Publication number: 20150317207
    Abstract: The present invention discloses a field-repair system and method for three-dimensional mask-programmed memory (3D-MPROM). Unlike a conventional mask-ROM which is fully factory-tested and contains no bad data at shipping, the 3D-MPROM is not fully factory-tested and contains bad data at shipping. Most of the 3D-MPROM data are checked and repaired in the field.
    Type: Application
    Filed: March 3, 2015
    Publication date: November 5, 2015
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Imprinted Memory
    Publication number: 20150318475
    Abstract: The present invention discloses an imprinted memory, more particularly a three-dimensional imprinted memory (3D-iP). Instead of photo-lithography, it uses imprint-lithography (also referred to as nano-imprint lithography, or NIL) to record data. For the sub-100 nm nodes, the data-template used by imprint-lithography is much less expensive than the data-mask used by photo-lithography.
    Type: Application
    Filed: June 20, 2015
    Publication date: November 5, 2015
    Inventor: Guobiao ZHANG
  • Vision-Based Aircraft Landing Aid
    Publication number: 20150314885
    Abstract: The present invention discloses a vision-based aircraft landing aid. During landing, it acquires a sequence of raw runway images. The raw runway image is first corrected for the roll angle (?). The altitude (A) can be calculated based on the runway width (W) and the properties related to both extended runway edges on the rotated (?-rotated) runway images. Smart-phone is most suitable for vision-based landing aid.
    Type: Application
    Filed: March 3, 2015
    Publication date: November 5, 2015
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Secure Printed Memory
    Publication number: 20150317255
    Abstract: Copyright protection for printed memory is more difficult than writable memory. Accordingly, the present invention discloses a secure printed memory. Its printed-memory module stores the same content data for all devices in a same family; its writable-memory module stores different encryption keys for different devices in the same family. Because different devices in the same family are encrypted with different keys, compromising a single device does not compromise other devices in the family.
    Type: Application
    Filed: March 3, 2015
    Publication date: November 5, 2015
    Inventor: Guobiao ZHANG
  • Compact Three-Dimensional Memory
    Publication number: 20150295011
    Abstract: The present invention discloses a compact three-dimensional memory (3D-MC). By forming simple switching devices (e.g., pass transistors) on the address-select lines, contact vias can be shared by the address-select lines in the same memory level, or from different memory levels. This leads to sparser and fewer contact vias. Sparse contact vias can facilitate the realization of three-dimensional integrated circuit (3D-IC).
    Type: Application
    Filed: March 3, 2015
    Publication date: October 15, 2015
    Applicant: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao ZHANG
  • Mixed Three-Dimensional Printed Memory
    Publication number: 20150294692
    Abstract: The present invention discloses a mixed three-dimensional printed memory (3D-P). The slow contents (e.g., e.g., digital books, digital maps, music, movies, and/or videos) are stored in large memory blocks and/or large memory arrays, whereas the fast contents (e.g., operating systems, software, and/or games) are stored in small memory blocks and/or small memory arrays.
    Type: Application
    Filed: March 3, 2015
    Publication date: October 15, 2015
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Discrete Three-Dimensional Vertical Memory Comprising Off-Die Address/Data-Translator
    Publication number: 20150269970
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least an A/D-translator die. The 3D-array die comprises a plurality of vertical memory strings. At least an address/data (A/D)-translator for the 3D-array die is located on the A/D-translator die instead of the 3D-array die. The 3D-array die and the A/D-translator die have substantially different back-end-of-line (BEOL) structures.
    Type: Application
    Filed: May 8, 2015
    Publication date: September 24, 2015
    Inventor: Guobiao ZHANG
  • Field-Repair System and Method for Large-Capacity Mask-Programmed Read-Only Memory
    Publication number: 20150269034
    Abstract: The present invention discloses field-repair system and method for a large-capacity mask-programmed memory (mask-ROM) such as three-dimensional mask-ROM (3D-MPROM). Unlike a conventional mask-ROM which is fully factory-tested and contains no bad data at shipping, the mask-ROM is not fully factory-tested (i.e., a large fraction of the mask-ROM data is not checked before shipping) and contains bad data at shipping. Most of the mask-ROM data are checked and repaired in the field.
    Type: Application
    Filed: June 8, 2015
    Publication date: September 24, 2015
    Inventor: Guobiao ZHANG
  • Discrete three-dimensional vertical memory
    Patent number: 9123393
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a voltage-generator die. The 3D-array die comprises a plurality of vertical memory strings. At least a voltage-generator component for the 3D-array die is located on the voltage-generator die instead of the 3D-array die. The 3D-array die and the voltage-generator die have substantially different back-end-of-line (BEOL) structures.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: September 1, 2015
    Assignees: HangZhou KiCun nformation Technology Co. Ltd.
    Inventor: Guobiao Zhang
  • Discrete Three-Dimensional Vertical Memory Comprising Off-Die Voltage Generator
    Publication number: 20150243331
    Abstract: The present invention discloses a discrete three-dimensional vertical memory (3D-MV). It comprises at least a 3D-array die and at least a voltage-generator die. The 3D-array die comprises a plurality of vertical memory strings. At least a voltage generator for the 3D-array die is located on the voltage-generator die instead of the 3D-array die. The 3D-array die and the voltage-generator die have substantially different back-end-of-line (BEOL) structures.
    Type: Application
    Filed: May 8, 2015
    Publication date: August 27, 2015
    Inventor: Guobiao ZHANG
  • Discrete three-dimensional memory comprising off-die address/data translator
    Patent number: 9117493
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its address-data translator (A/D-translator) is located on a separate peripheral-circuit die. The A/D-translator converts at least an address and/or data between logical space and physical space for the 3D-array die. A single A/D-translator die can support multiple 3D-array dies.
    Type: Grant
    Filed: March 6, 2013
    Date of Patent: August 25, 2015
    Assignees: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao Zhang
  • Small-Grain Three-Dimensional Memory
    Publication number: 20150214277
    Abstract: The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.
    Type: Application
    Filed: February 5, 2015
    Publication date: July 30, 2015
    Applicant: HangZhou HaiCun Information Technology Co., Ltd.
    Inventors: Guobiao ZHANG, Bin YU, HongYu YU, Jin HE, JinFeng KANG, ZhiWei LIU
  • Three-dimensional memory comprising discrete read/write-voltage generator die
    Patent number: 9093153
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). Its 3D-M arrays are located on at least one 3D-array die, while its read/write-voltage generator (VR/VW-generator) is located on a separate peripheral-circuit die. The VR/VW-generator generates at least a read and/or write voltage to the 3D-array die. A single VR/VW-generator die can support multiple 3D-array dies.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: July 28, 2015
    Assignees: HangZhou HaiCun Information Technology Co. Ltd.
    Inventor: Guobiao Zhang
  • Discrete three-dimensional memory comprising dice with different BEOL structures
    Patent number: 9093129
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least a peripheral-circuit component of the 3D-M is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures, e.g. different number of BEOL layers, different number of interconnect layers, and/or different interconnect materials.
    Type: Grant
    Filed: October 6, 2013
    Date of Patent: July 28, 2015
    Assignees: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao Zhang
  • Laser landing altimeter for precision aircraft landing aid
    Patent number: 9091538
    Abstract: The present invention discloses a laser landing altimeter for precision aircraft landing aid. Its measurement unit measures distance using a modulated laser beam with centimeter accuracy. Its processing unit predicts the future altitude based on a realistic landing altitude model and determines the landing maneuver time (the time to initiate a landing maneuver).
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: July 28, 2015
    Assignees: ChengDu HaiCun IP Technology LLC
    Inventor: Guobiao Zhang
  • Music-Based Positioning Aided By Dead Reckoning
    Publication number: 20150177000
    Abstract: Music-based positioning (MP) provides positioning service only sporadically. To continuously provide positioning service, the present invention discloses music-based positioning aided by dead reckoning (MP-DR). At each signature burst (i.e., a highly unique short musical segment suitable for positioning), sounds of a music piece or a human speech are used for positioning. Between signature bursts, dead reckoning (DR) is used.
    Type: Application
    Filed: March 3, 2015
    Publication date: June 25, 2015
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventors: Guobiao ZHANG, Bruce Bing WANG