Patents by Inventor Guobiao Zhang

Guobiao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Discrete Three-Dimensional Memory
    Publication number: 20130056881
    Abstract: The present invention discloses a discrete three-dimensional memory (3D-M). It is partitioned into at least two discrete dice: a memory-array die and a peripheral-circuit die. The memory-array die comprises at least a 3D-M array, which is built in a 3-D space. The peripheral-circuit die comprises at least a peripheral-circuit component, which is built on a 2-D plane. At least one peripheral-circuit component of the 3D-M is formed in the peripheral-circuit die instead of in the memory-array die. The array efficiency of the memory-array die can be larger than 70%.
    Type: Application
    Filed: August 22, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Hybrid Content-Distribution System and Method
    Publication number: 20130060880
    Abstract: The present invention discloses a hybrid content-distribution system. It uses two types of memory to distribute contents: re-writable memory (RWM) and three-dimensional mask-programmed read-only memory (3D-MPROM). During a publication period, new contents are transferred from a remote server to the RWM. At the end of the publication period, a user receives a 3D-MPROM, which stores a collection of the transferred contents. To make room for the contents to be released during the next publication period, the contents common to the 3D-MPROM and the RWM are deleted from the RWM afterwards.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 7, 2013
    Applicant: CHENGDU HAICUN IP TECHNOLOGY LLC
    Inventor: Guobiao ZHANG
  • Secure Three-Dimensional Mask-Programmed Read-Only Memory
    Publication number: 20120210438
    Abstract: Among all classes of three-dimensional read-only memory (3D-ROM), mask-programmed 3D-ROM (3Dm-ROM) is suitable for mass information dissemination. A secure 3Dm-ROM (3Dm-ROMS) comprises a 3Dm-ROM for storing mass information, a non-mask-programmed memory (NMP) for storing at least a key and an encryption logic. It provides strong copyright protection by writing different keys into different NMPs and encrypting the 3Dm-ROM contents with these different keys.
    Type: Application
    Filed: February 15, 2011
    Publication date: August 16, 2012
    Inventor: Guobiao ZHANG
  • Mask-Programmed Read-Only Memory with Reserved Space
    Publication number: 20120144091
    Abstract: The present invention discloses a mask-ROM with reserved space (mask-ROMRS). On its original data-mask, at least one mask-region is reserved for the new contents and contains no patterns. The present invention further discloses a 3-D mask-ROM with reserved memory level(s) (3D-MPROMRL). At least one memory level is reserved for the new contents and not manufactured in the original 3D-MPROMRL. By avoiding mask replacement, the present invention minimizes extra mask cost due to content revision.
    Type: Application
    Filed: February 14, 2012
    Publication date: June 7, 2012
    Inventor: Guobiao ZHANG
  • Muffler
    Patent number: 8079441
    Abstract: A muffler is disclosed. In the muffler a throttling device that is controlled by the energy of the airflow to be muffled is provided in a pipeline of the airflow that needs to be muffled. The muffler is adjusted by itself according to random variety of the pulsing airflow, and can eliminate or reduce effectively the pulsation of the airflow and the related noise in the range of the low frequency and the middle frequency. The muffling effect of the muffler has no correlation with the volume of the muffler, and therefore the volume of the muffler can be reduced.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: December 20, 2011
    Inventor: Guobiao Zhang
  • Large Bit-Per-Cell Three-Dimensional Mask-Programmable Read-Only Memory
    Publication number: 20110284814
    Abstract: A large bit-per-cell three-dimensional mask-programmable read-only memory (3D-MPROMB) is disclosed. It can achieve large bit-per-cell (e.g. 4-bpc or more). 3D-MPROMB can be realized by adding resistive layer(s) or resistive element(s) to the memory cells.
    Type: Application
    Filed: May 24, 2010
    Publication date: November 24, 2011
    Inventor: Guobiao Zhang
  • Three-dimensional memory-based three-dimensional memory module
    Patent number: 7952904
    Abstract: Three-dimensional-memory-based three-dimensional memory module (3D2-M2) is a three-dimensional memory module (3D-MM) comprising a plurality of three-dimensional mask-programmable memory (3D-mM) chips. It is an ultra-low-cost, ultra-large-capacity and small-form-factor memory module. By further incorporating a usage-control (UC) block, 3D2-M2 enables a pricing model more acceptable to consumers, i.e. the hardware is sold at a low initial selling price (ISP) and the user only pays for the selected usage(s).
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: May 31, 2011
    Inventor: Guobiao Zhang
  • Multimedia three-dimensional memory module (M3DMM) system
    Patent number: 7952903
    Abstract: Multimedia three-dimensional memory module (M3DMM) is an ideal storage for pre-recorded multimedia library (PML). Among all semiconductor storage technologies, (3D)2-MM (i.e. three-dimensional memory-based M3DMM), particularly mask-programmable (3D)2-MM, has the largest storage capacity and is the only one that can store a pre-recorded movie library (PmL) at a reasonable price.
    Type: Grant
    Filed: April 18, 2007
    Date of Patent: May 31, 2011
    Inventor: Guobiao Zhang
  • Three-Dimensional Mask-Programmable Read-Only Memory with Reserved Space
    Publication number: 20110019459
    Abstract: The present invention discloses a three-dimensional mask-programmable read-only memory with reserved space (3D-MPROMRS). It is released in a sequence of versions. In the original version, its storage space comprises an initial-release space and a reserved space. The initial-release space stores the multimedia files from the initial release. The reserved space, although large enough to store at least one multimedia file, does not store any file. In the later version, the reserved space stores the new release.
    Type: Application
    Filed: September 15, 2010
    Publication date: January 27, 2011
    Inventor: Guobiao Zhang
  • Three-dimensional memory cells
    Patent number: 7847283
    Abstract: The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility.
    Type: Grant
    Filed: September 17, 2008
    Date of Patent: December 7, 2010
    Inventor: Guobiao Zhang
  • MUFFLER
    Publication number: 20100276226
    Abstract: A muffler is disclosed. In the muffler a throttling device that is controlled by the energy of the airflow to be muffled is provided in a pipeline of the airflow that needs to be muffled. The muffler is adjusted by itself according to random variety of the pulsing airflow, and can eliminate or reduce effectively the pulsation of the airflow and the related noise in the range of the low frequency and the middle frequency. The muffling effect of the muffler has no correlation with the volume of the muffler, and therefore the volume of the muffler can be reduced.
    Type: Application
    Filed: July 19, 2010
    Publication date: November 4, 2010
    Inventor: Guobiao Zhang
  • -ary three-dimensional mask-programmable read-only memory
    Patent number: 7821080
    Abstract: N-ary three-dimensional mask-programmable read-only memory (N-3DMPROM) stores multi-bit-per-cell. Its memory cells can have N states (N>2) and data are stored as N-ary codes. N-3DMPROM has a larger storage density than the prior-art binary 3D-MPROM. One advantage of N-3DROM over other N-ary memory (e.g. multi-level-cell flash) is that its array efficiency can be kept high. N-3DMPROM could be geometry-defined, junction-defined, or a combination thereof.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: October 26, 2010
    Inventor: Guobiao Zhang
  • Muffler
    Patent number: 7779962
    Abstract: A muffler is disclosed. In the muffler a throttling device that is controlled by the energy of the airflow to be muffled is provided in a pipeline of the airflow that needs to be muffled. The muffler is adjusted by itself according to random variety of the pulsing airflow, and can eliminate or reduce effectively the pulsation of the airflow and the related noise in the range of the low frequency and the middle frequency. The muffling effect of the muffler has no correlation with the volume of the muffler, and therefore the volume of the muffler can be reduced.
    Type: Grant
    Filed: August 19, 2003
    Date of Patent: August 24, 2010
    Inventor: Guobiao Zhang
  • Peripheral circuits of three-dimensional mask-programmable memory
    Patent number: 7763911
    Abstract: The present invention discloses several preferred mask-programmable 3-D memory (3D-MPROM) structures, including pillar-shaped 3D-MPROM, natural-junction 3D-MPROM, interleaved 3D-MPROM, and separate 3D-MPROM. The present invention also makes further improvements to its peripheral circuits. The use of sense-amplifier can significantly lower the leakage-current requirement on the 3D-ROM memory cell. Self-timing can improve the 3D-ROM speed and reduce its power consumption.
    Type: Grant
    Filed: January 7, 2005
    Date of Patent: July 27, 2010
    Inventor: Guobiao Zhang
  • Small-pitch three-dimensional mask-programmable memory
    Patent number: 7728391
    Abstract: The present invention discloses a small-pitch three-dimensional mask-programmable memory (SP-3DmM). It is an ultra-low-cost and ultra-high-density semiconductor memory. SP-3DmM comprises a mask-programmable memory level stacked above the substrate. This memory level comprises diodes but no transistors or antifuses. Its minimum line pitch is smaller than the minimum gate pitch of the substrate transistors.
    Type: Grant
    Filed: November 6, 2007
    Date of Patent: June 1, 2010
    Inventor: Guobiao Zhang
  • Hybrid-Level Three-Dimensional Mask-Programmable Read-Only Memory
    Publication number: 20100025861
    Abstract: A hybrid-level three-dimensional mask-programmable read-only memory (HL-3DMPROM) includes a plurality of memory sets. Within each memory set, a plurality of vertically stacked memory levels are interleaved and all adjacent memory levels share address-selection lines; between adjacent memory sets, memory levels are separated by an inter-level dielectric and do not share any address-selection lines.
    Type: Application
    Filed: June 2, 2009
    Publication date: February 4, 2010
    Inventor: Guobiao ZHANG
  • -ary mask-programmable memory
    Patent number: 7633128
    Abstract: The present invention discloses an N-ary mask-programmable memory (N-MPM). N-MPM cells can have N cell-states, with N>2. N-MPM cells could be geometry-defined, junction-defined, or both. Based on an nF-opening process (n?1), partial-contacts with feature size <1F can be implemented with an nF-opening mask with feature size ?1F. N can be a non-integral power of 2. In this case, each memory cell represents fractional bits.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: December 15, 2009
    Inventor: Guobiao Zhang
  • N-ary Three-Dimensional Mask-Programmable Read-Only Memory
    Publication number: 20090237976
    Abstract: N-ary three-dimensional mask-programmable read-only memory (N-3DMPROM) stores multi-bit-per-cell. Its memory cells can have N states (N>2) and data are stored as N-ary codes. N-3DMPROM has a larger storage density than the prior-art binary 3D-MPROM. One advantage of N-3DROM over other N-ary memory (e.g. multi-level-cell flash) is that its array efficiency can be kept high. N-3DMPROM could be geometry-defined, junction-defined, or a combination thereof.
    Type: Application
    Filed: June 4, 2009
    Publication date: September 24, 2009
    Inventor: Guobiao ZHANG
  • Three-Dimensional Memory-Based Three-Dimensional Memory Module
    Publication number: 20090070214
    Abstract: Three-dimensional-memory-based three-dimensional memory module (3D2-M2) is a three-dimensional memory module (3D-MM) comprising a plurality of three-dimensional mask-programmable memory (3D-mM) chips. As an ultra-low-cost and ultra-large-capacity memory module, 3D2-M2 is suitable for pre-recorded multimedia library (PML), particularly pre-recorded movie library (PmL). By limiting access to PML, its pricing model is more acceptable to consumers.
    Type: Application
    Filed: January 11, 2008
    Publication date: March 12, 2009
    Inventor: Guobiao ZHANG
  • Three-Dimensional Memory Cells
    Publication number: 20090008722
    Abstract: The present invention discloses a three-dimensional memory (3D-M) with polarized 3D-ROM (three-dimensional read-only memory) cells. Polarized 3D-ROM can ensure a larger unit array and therefore, a better integratibility.
    Type: Application
    Filed: September 17, 2008
    Publication date: January 8, 2009
    Inventor: Guobiao Zhang