Patents by Inventor Gurtej Sandhu

Gurtej Sandhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11217737
    Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.
    Type: Grant
    Filed: July 31, 2020
    Date of Patent: January 4, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20210336129
    Abstract: Techniques for reducing damage in memory cells are provided. Memory cell structures are typically formed using dry etch and/or planarization processes which damage certain regions of the memory cell structure. In one or more embodiments, certain regions of the cell structure may be sensitive to damage. For example, the free magnetic region in magnetic memory cell structures may be susceptible to demagnetization. Such regions may be substantially confined by barrier materials during the formation of the memory cell structure, such that the edges of such regions are protected from damaging processes. Furthermore, in some embodiments, a memory cell structure is formed and confined within a recess in dielectric material.
    Type: Application
    Filed: June 29, 2021
    Publication date: October 28, 2021
    Inventors: Jun LIU, Gurtej SANDHU
  • Publication number: 20210141174
    Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.
    Type: Application
    Filed: January 20, 2021
    Publication date: May 13, 2021
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 11002914
    Abstract: Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: May 11, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 10935739
    Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: March 2, 2021
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20200365787
    Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 19, 2020
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20200348472
    Abstract: The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
    Type: Application
    Filed: July 10, 2020
    Publication date: November 5, 2020
    Inventor: Gurtej Sandhu
  • Patent number: 10777722
    Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: September 15, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 10761275
    Abstract: The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: September 1, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej Sandhu
  • Patent number: 10656354
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: May 19, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Patent number: 10573366
    Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: February 25, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 10515801
    Abstract: Self-assembling materials, such as block copolymers, are used as mandrels for pitch multiplication. The copolymers are deposited over a substrate and directed to self-assemble into a desired pattern. One of the blocks forming the block copolymers is selectively removed. The remaining blocks are used as mandrels for pitch multiplication. Spacer material is blanket deposited over the blocks. The spacer material is subjected to a spacer etch to form spacers on sidewalls of the mandrels. The mandrels are selectively removed to leave free-standing spacers. The spacers may be used as pitch-multiplied mask features to define a pattern in an underlying substrate.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: December 24, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej Sandhu
  • Patent number: 10333064
    Abstract: This disclosure provides embodiments for the formation of vertical memory cell structures that may be implemented in RRAM devices. In one embodiment, memory cell area may be increased by varying word line height and/or word line interface surface characteristics to ensure the creation of a grain boundary that is suitable for formation of conductive pathways through an active layer of an RRAM memory cell. This may maintain continuum behavior while reducing random cell-to-cell variability that is often encountered at nanoscopic scales. In another embodiment, such vertical memory cell structures may be formed in multiple-tiers to define a three-dimensional RRAM memory array. Further embodiments also provide a spacer pitch-doubled RRAM memory array that integrates vertical memory cell structures.
    Type: Grant
    Filed: April 13, 2011
    Date of Patent: June 25, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Scott E. Sills, Gurtej Sandhu
  • Publication number: 20190051340
    Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
    Type: Application
    Filed: October 18, 2018
    Publication date: February 14, 2019
    Inventors: Jun Liu, Gurtej Sandhu
  • Publication number: 20190013452
    Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.
    Type: Application
    Filed: August 20, 2018
    Publication date: January 10, 2019
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 10127962
    Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: November 13, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Publication number: 20180299626
    Abstract: The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
    Type: Application
    Filed: June 22, 2018
    Publication date: October 18, 2018
    Inventor: Gurtej Sandhu
  • Patent number: 10094988
    Abstract: The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: October 9, 2018
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej Sandhu
  • Patent number: 10090451
    Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: October 2, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20180224614
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Application
    Filed: March 26, 2018
    Publication date: August 9, 2018
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe