Patents by Inventor Gurtej Sandhu

Gurtej Sandhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150171090
    Abstract: An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.
    Type: Application
    Filed: February 27, 2015
    Publication date: June 18, 2015
    Inventors: Gurtej Sandhu, Scott Sills
  • Patent number: 9034724
    Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: May 19, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20150125966
    Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
    Type: Application
    Filed: January 13, 2015
    Publication date: May 7, 2015
    Inventors: Jun Liu, Gurtej Sandhu
  • Publication number: 20150108658
    Abstract: A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.
    Type: Application
    Filed: December 30, 2014
    Publication date: April 23, 2015
    Inventor: Gurtej Sandhu
  • Patent number: 9005458
    Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: April 14, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade
  • Patent number: 8987906
    Abstract: An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.
    Type: Grant
    Filed: April 22, 2014
    Date of Patent: March 24, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Scott Sills
  • Publication number: 20150078073
    Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
    Type: Application
    Filed: November 25, 2014
    Publication date: March 19, 2015
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 8981463
    Abstract: A memory array that includes access devices that are each electrically coupled to more than one memory cell. The memory cells are coupled to the access devices via diode devices. The access devices include vertical semiconductor material mesas upstanding from a semiconductor base that form a conductive channel between first and second doped regions, and also planar access devices.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: March 17, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej Sandhu
  • Publication number: 20150063826
    Abstract: An optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along an optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature.
    Type: Application
    Filed: November 6, 2014
    Publication date: March 5, 2015
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 8945950
    Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: February 3, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 8946907
    Abstract: A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.
    Type: Grant
    Filed: June 18, 2012
    Date of Patent: February 3, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej Sandhu
  • Publication number: 20150024602
    Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.
    Type: Application
    Filed: September 30, 2014
    Publication date: January 22, 2015
    Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
  • Patent number: 8917542
    Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
    Type: Grant
    Filed: January 21, 2013
    Date of Patent: December 23, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 8909000
    Abstract: An optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along an optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: December 9, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 8895232
    Abstract: The dimensions of mask patterns, such as pitch-multiplied spacers, are controlled by controlled growth of features in the patterns after they are formed. A pattern of mandrels is formed overlying a semiconductor substrate. Spacers are then formed on sidewalls of the mandrels by depositing a blanket layer of material over the mandrels and preferentially removing spacer material from horizontal surfaces. The mandrels are selectively removed, leaving behind a pattern of freestanding spacers. The spacers comprise a material, such as polysilicon and amorphous silicon, known to increase in size upon being oxidized. The spacers are oxidized and grown to a desired width. The spacers can then be used as a mask to pattern underlying layers and the substrate. Advantageously, because the spacers are grown by oxidation, thinner blanket layers can be deposited over the mandrels, allowing the deposition of more conformal blanket layers and widening the process window for spacer formation.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: November 25, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Mirzafer K. Abatchev, Gurtej Sandhu
  • Publication number: 20140341503
    Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.
    Type: Application
    Filed: July 30, 2014
    Publication date: November 20, 2014
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 8885398
    Abstract: Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: November 11, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 8865598
    Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: October 21, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Sanket Sant, Gurtej Sandhu, Neal R. Rueger
  • Patent number: 8861978
    Abstract: A wave division multiplexing (WDM) system is disclosed which accommodates shifts in the resonant frequency of optical modulators by using at least two carriers per optical communications channel and at least two resonant modulator circuits respectively associated with the carriers within each optical modulator. A first resonant modulator circuit resonates with a first carrier and a second resonates with a second carrier when there is a shift in resonance frequency of the at least two resonant optical modulator circuits. A switch circuit controls which carrier is being modulated by its respective resonant modulator circuit.
    Type: Grant
    Filed: March 20, 2014
    Date of Patent: October 14, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20140299997
    Abstract: Methods are disclosed, including for increasing the density of isolated features in an integrated circuit. Also disclosed are associated structures. In some embodiments, contacts are formed on pitch with other structures, such as conductive interconnects that may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. Features in the selectively definable material are trimmed, and spacer material is blanket deposited over the features and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed, leaving a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts. In some embodiments, the on pitch contacts may be used to electrically contact conductive interconnects in the substrate.
    Type: Application
    Filed: June 23, 2014
    Publication date: October 9, 2014
    Inventors: Gurtej Sandhu, Mark Kiehlbauch, Steve Kramer, John Smythe