Patents by Inventor Gurtej Sandhu

Gurtej Sandhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9804350
    Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: October 31, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 9791629
    Abstract: Devices and systems to perform optical alignment by using one or more liquid crystal layers to actively steer a light beam from an optical fiber to an optical waveguide integrated on a chip. An on-chip feedback mechanism can steer the beam between the fiber and a grating based waveguide to minimize the insertion loss of the system.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: October 17, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 9715070
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: July 25, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Publication number: 20170139163
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Application
    Filed: November 28, 2016
    Publication date: May 18, 2017
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Publication number: 20170140806
    Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
    Type: Application
    Filed: January 31, 2017
    Publication date: May 18, 2017
    Inventors: Jun Liu, Gurtej Sandhu
  • Publication number: 20170133075
    Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
    Type: Application
    Filed: January 23, 2017
    Publication date: May 11, 2017
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 9595664
    Abstract: A magnetic cell structure including a nonmagnetic bridge, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, and a nonmagnetic bridge electrically connecting the free layer and the pinned layer. The shape and/or configuration of the nonmagnetic bridge directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer of the structure is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: March 14, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 9589618
    Abstract: Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: March 7, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Patent number: 9577186
    Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. The first conductive electrode has an elevationally outermost surface and opposing laterally outermost edges at the elevationally outermost surface in one planar cross section. Multi-resistive state metal oxide-comprising material is formed over the first conductive electrode. Conductive material is deposited over the multi-resistive state metal oxide-comprising material. A second conductive electrode of the memory cell which comprises the conductive material is received over the multi-resistive state metal oxide-comprising material.
    Type: Grant
    Filed: June 4, 2012
    Date of Patent: February 21, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Bhaskar Srinivasan, Gurtej Sandhu, John Smythe
  • Patent number: 9568674
    Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.
    Type: Grant
    Filed: March 19, 2015
    Date of Patent: February 14, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade
  • Patent number: 9552858
    Abstract: A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: January 24, 2017
    Assignee: Micron Technology. Inc.
    Inventors: Jun Liu, Steve Kramer, Gurtej Sandhu
  • Patent number: 9507104
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: November 29, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Patent number: 9437809
    Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: September 6, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Publication number: 20160231519
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Application
    Filed: April 20, 2016
    Publication date: August 11, 2016
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Publication number: 20160216465
    Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.
    Type: Application
    Filed: April 5, 2016
    Publication date: July 28, 2016
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20160181495
    Abstract: Described embodiments include photonic integrated circuits and systems with photonic devices, including thermal isolation regions for the photonic devices. Methods of fabricating such circuits and systems are also described.
    Type: Application
    Filed: February 29, 2016
    Publication date: June 23, 2016
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 9368444
    Abstract: A method for creating structures in a semiconductor assembly is provided. The method includes etching apertures into a dielectric layer and applying a polymer layer over the dielectric layer. The polymer layer is applied uniformly and fills the apertures at different rates depending on the geometry of the apertures, or on the presence or absence of growth accelerating material. The polymer creates spacers for the etching of additional structure in between the spacers. The method is capable of achieving structures smaller than current lithography techniques.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: June 14, 2016
    Assignee: Micron Technology, Inc.
    Inventor: Gurtej Sandhu
  • Patent number: 9360627
    Abstract: A method and apparatus are described which provide for wavelength drift compensation in a photonic waveguide by application of an electric field to a waveguide having a strained waveguide core.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: June 7, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Lei Bi, Roy Meade, Gurtej Sandhu
  • Patent number: 9341787
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: May 17, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Patent number: 9329336
    Abstract: Disclosed are methods of providing a hermetically sealed optical connection between an optical fiber and an optical element of a chip and a photonic-integrated chip manufactured using such methods.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: May 3, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu