Patents by Inventor Gurtej Sandhu

Gurtej Sandhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8853682
    Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: October 7, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Neil Greeley, Gurtej Sandhu, John Smythe, Bhaskar Srinivasan
  • Patent number: 8845812
    Abstract: Methods and apparatus are provided for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing a composition of magnetic particles dispersed within a base fluid to remove contaminants from a surface of the substrate.
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: September 30, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Nishant Sinha, Steve Kramer, Gurtej Sandhu
  • Publication number: 20140264675
    Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
    Type: Application
    Filed: May 29, 2014
    Publication date: September 18, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Publication number: 20140241682
    Abstract: Disclosed method and apparatus embodiments provide a photonic device with optical isolation from a supporting substrate. A generally rectangular cavity in cross section is provided below an element of the photonic device and the element may be formed from a ledge of the supporting substrate which is over the cavity.
    Type: Application
    Filed: February 26, 2013
    Publication date: August 28, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade
  • Patent number: 8815704
    Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: August 26, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20140225264
    Abstract: An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.
    Type: Application
    Filed: April 22, 2014
    Publication date: August 14, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Gurtej Sandhu, Scott Sills
  • Patent number: 8796661
    Abstract: A method of forming a nonvolatile memory cell includes forming a first electrode having a first current conductive material and a circumferentially self-aligned second current conductive material projecting elevationally outward from the first current conductive material. The second current conductive material is different in composition from the first current conductive material. A programmable region is formed over the first current conductive material and over the projecting second current conductive material of the first electrode. A second electrode is formed over the programmable region. In one embodiment, the programmable region is ion conductive material, and at least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Other method and structural aspects are disclosed.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: August 5, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Nirmal Ramaswamy, Gurtej Sandhu
  • Patent number: 8796806
    Abstract: A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: August 5, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Bhaskar Srinivasan
  • Patent number: 8796656
    Abstract: Methods, devices, and systems associated with oxide based memory are described herein. In one or more embodiments, a method of forming an oxide based memory cell includes forming a first electrode, forming a tunnel barrier, wherein a first portion of the tunnel barrier includes a first material and a second portion of the tunnel barrier includes a second material, forming an oxygen source, and forming a second electrode.
    Type: Grant
    Filed: June 4, 2010
    Date of Patent: August 5, 2014
    Assignee: Micron Technology, Inc.
    Inventors: D.V. Nirmal Ramaswamy, Gurtej Sandhu
  • Publication number: 20140205289
    Abstract: A wave division multiplexing (WDM) system is disclosed which accommodates shifts in the resonant frequency of optical modulators by using at least two carriers per optical communications channel and at least two resonant modulator circuits respectively associated with the carriers within each optical modulator. A first resonant modulator circuit resonates with a first carrier and a second resonates with a second carrier when there is a shift in resonance frequency of the at least two resonant optical modulator circuits. A switch circuit controls which carrier is being modulated by its respective resonant modulator circuit.
    Type: Application
    Filed: March 20, 2014
    Publication date: July 24, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Roy Meade, Gurtej Sandhu
  • Patent number: 8772166
    Abstract: Methods are disclosed, including for increasing the density of isolated features in an integrated circuit. Also disclosed are associated structures. In some embodiments, contacts are formed on pitch with other structures, such as conductive interconnects that may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. Features in the selectively definable material are trimmed, and spacer material is blanket deposited over the features and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed, leaving a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts. In some embodiments, the on pitch contacts may be used to electrically contact conductive interconnects in the substrate.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: July 8, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Mark Kiehlbauch, Steve Kramer, John Smythe
  • Publication number: 20140185983
    Abstract: A structure for optically aligning an optical fiber to a photonic device and method of fabrication of same. The structure optically aligns an optical fiber to the photonic device using a lens between the two which is moveable by actuator heads. The lens is moveable by respective motive sources associated with the actuator heads.
    Type: Application
    Filed: January 2, 2013
    Publication date: July 3, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Gurtej Sandhu, Roy Meade, Lei Bi, John Smythe
  • Patent number: 8767454
    Abstract: A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: July 1, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Jun Liu, Gurtej Sandhu
  • Publication number: 20140175596
    Abstract: A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.
    Type: Application
    Filed: January 9, 2014
    Publication date: June 26, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Roy Meade, Gurtej Sandhu
  • Publication number: 20140166972
    Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.
    Type: Application
    Filed: February 20, 2014
    Publication date: June 19, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Neil Greeley, Gurtej Sandhu, John Smythe, Bhaskar Srinivasan
  • Patent number: 8747557
    Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.
    Type: Grant
    Filed: March 5, 2009
    Date of Patent: June 10, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Krupakar Murali Subramanian, Neal Rueger, Gurtej Sandhu
  • Publication number: 20140153867
    Abstract: A photonic device and methods of formation that provide an area providing reduced optical coupling between a substrate and an inner core of the photonic device are described. The area is formed using holes in the inner core and an outer cladding. The holes may be filled with materials which provide a photonic crystal. Thus, the photonic device may function as a waveguide and as a photonic crystal.
    Type: Application
    Filed: February 10, 2014
    Publication date: June 5, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Roy Meade
  • Patent number: 8735285
    Abstract: An integrated circuit and a method of formation provide a contact area formed at an angled end of at least one linearly extending conductive line. In an embodiment, conductive lines with contact landing pads are formed by patterning lines in a mask material, cutting at least one of the material lines to form an angle relative to the extending direction of the material lines, forming extensions from the angled end faces of the mask material, and patterning an underlying conductor by etching using said material lines and extension as a mask. In another embodiment, at least one conductive line is cut at an angle relative to the extending direction of the conductive line to produce an angled end face, and an electrical contact landing pad is formed in contact with the angled end face.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: May 27, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, Scott Sills
  • Patent number: 8723252
    Abstract: A vertical semiconductor material mesa upstanding from a semiconductor base that forms a conductive channel between first and second doped regions. The first doped region is electrically coupled to one or more first silicide layers on the surface of the base. The second doped region is electrically coupled to one of a plurality of second silicide layers on the upper surface of the mesa. A gate conductor is provided on one or more sidewalls of the mesa.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: May 13, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Gurtej Sandhu, John K. Zahurak, Jay Parks
  • Publication number: 20140126854
    Abstract: An optical waveguide for transmitting an optical signal input to the optical waveguide with a first frequency. The optical waveguide includes a plurality of modulator circuits configured along an optical transmission channel. Each modulator circuit includes at least one resonant structure that resonates at the first frequency when the modulator circuit that includes the at least one resonant structure is at a resonant temperature. Each modulator circuit has a different resonant temperature.
    Type: Application
    Filed: January 13, 2014
    Publication date: May 8, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Roy Meade, Gurtej Sandhu