Abstract: A semiconductor wafer has a plurality of first semiconductor die. A second semiconductor die is mounted to the first semiconductor die. The active surface of the first semiconductor die is oriented toward an active surface of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die. A portion of a back surface of the second semiconductor die opposite the active surface is removed. Conductive pillars are formed around the second semiconductor die. TSVs can be formed through the first semiconductor die. An interconnect structure is formed over the back surface of the second semiconductor die, encapsulant, and conductive pillars. The interconnect structure is electrically connected to the conductive pillars. A portion of a back surface of the first semiconductor die opposite the active surface is removed. A heat sink or shielding layer can be formed over the back surface of the first semiconductor die.

Abstract: A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting a component over a side of the substrate; forming an interface module having a module via in any location for connectivity to the substrate; and mounting the entirety of the interface module over a portion of the side of the substrate next to the component.

Abstract: A semiconductor device has a plurality of semiconductor die. A substrate is provided with bumps disposed over the substrate. A first prefabricated insulating film is disposed between the semiconductor die and substrate. An interconnect structure is formed over the semiconductor die and first prefabricated insulating film. The bumps include a copper core encapsulated within copper plating. The first prefabricated insulating film includes glass cloth, glass fiber, or glass fillers. The substrate includes a conductive layer formed in the substrate and coupled to the bumps. The semiconductor die is disposed between the bumps of the substrate. The bumps and the semiconductor die are embedded within the first prefabricated insulating film. A portion of the first prefabricated insulating film is removed to expose the bumps. The bumps electrically connect the substrate to the interconnect structure.

Abstract: A semiconductor device has a prefabricated multi-die leadframe with a base and integrated raised die paddle and a plurality of bodies extending from the base. A thermal interface layer is formed over a back surface of a semiconductor die or top surface of the raised die paddle. The semiconductor die is mounted over the raised die paddle between the bodies of the leadframe with the TIM disposed between the die and raised die paddle. An encapsulant is deposited over the leadframe and semiconductor die. Vias can be formed in the encapsulant. An interconnect structure is formed over the leadframe, semiconductor die, and encapsulant, including into the vias. The base is removed to separate the bodies from the raised die paddle. The raised die paddle provides heat dissipation for the semiconductor die. The bodies are electrically connected to the interconnect structure. The bodies operate as conductive posts for electrical interconnect.

Abstract: A semiconductor device is made by mounting a semiconductor wafer to a temporary carrier. A plurality of TSV is formed through the wafer. A cavity is formed partially through the wafer. A first semiconductor die is mounted to a second semiconductor die. The first and second die are mounted to the wafer such that the first die is disposed over the wafer and electrically connected to the TSV and the second die is disposed within the cavity. An encapsulant is deposited over the wafer and first and second die. A portion of the encapsulant is removed to expose a first surface of the first die. A portion of the wafer is removed to expose the TSV and a surface of the second die. The remaining portion of the wafer operates as a TSV interposer for the first and second die. An interconnect structure is formed over the TSV interposer.

Abstract: A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.

Abstract: A semiconductor device has a semiconductor die. The semiconductor die is disposed over a conductive substrate. An encapsulant is deposited over the semiconductor die. A first interconnect structure is formed over the encapsulant. An opening is formed through the substrate to isolate a portion of the substrate electrically connected to the first interconnect structure. A bump is formed over the first interconnect structure. Conductive vias are formed through the encapsulant and electrically connected to the portion of the substrate. A plurality of bumps is formed over the semiconductor die. A first conductive layer is formed over the encapsulant. A first insulating layer is formed over the first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. Protrusions extend above the substrate.

Abstract: Methods of forming solder balls for semiconductor packages using film-assisted molding include providing a substrate, forming a plurality of solder balls on the substrate where each solder ball has an initial profile, and coupling a substantially planar film to the solder balls. As an encapsulation is deposited over the substrate and around the solder balls, the substantially planar film and the encapsulation, along with the molding process, can cause each solder ball to morph from its initial profile to a final profile, where the final profile is generally different from the initial profile.

Abstract: A semiconductor device has an interposer frame mounted over a carrier. A semiconductor die has an active surface and bumps formed over the active surface. The semiconductor die can be mounted within a die opening of the interposer frame or over the interposer frame. Stacked semiconductor die can also be mounted within the die opening of the interposer frame or over the interposer frame. Bond wires or bumps are formed between the semiconductor die and interposer frame. An encapsulant is deposited over the interposer frame and semiconductor die. An interconnect structure is formed over the encapsulant and bumps of the first semiconductor die. An electronic component, such as a discrete passive device, semiconductor die, or stacked semiconductor die, is mounted over the semiconductor die and interposer frame. The electronic component has an I/O count less than an I/O count of the semiconductor die.

Abstract: Methods of forming conductive jumper traces for semiconductor devices and packages. Substrate is provided having first, second and third trace lines formed thereon, where the first trace line is between the second and third trace lines. The first trace line can be isolated with a covering layer. A conductive layer can be formed between the second and third trace lines and over the first trace line by a depositing process followed by a heating process to alter the chemical properties of the conductive layer. The resulting conductive layer is able to conform to the covering layer and serve to provide electrical connection between the second and third trace lines.

Abstract: Methods of forming conductive and insulating layers for semiconductor devices and packages. Substrate is provided with integrated circuit device and interconnect structure mounted thereon, the interconnect structure adjacent the integrated circuit device. The integrated circuit device and portions of the interconnect structure can be covered with an encapsulation exposing a portion of the interconnect structure. Conductive material is formed over the exposed portion of the interconnect structure by a depositing process followed by a heating process to alter the chemical properties of the conductive material. Optionally, a dispersing process may be incorporated.

Abstract: Methods of forming conductive materials on contact pads for semiconductor devices and packages. Substrate is provided with contact pads formed thereon. Conductive material is formed over the contact pads by a depositing process followed by a heating process to alter the chemical properties of the conductive material. Optionally, a dispersing process may be incorporated. An interconnect structure can be mounted over the conductive material where the interconnect structure is attached to the conductive material without any active treatment to the conductive material after formation.

Abstract: A semiconductor device has a semiconductor die. The semiconductor die is disposed over a conductive substrate. An encapsulant is deposited over the semiconductor die. A first interconnect structure is formed over the encapsulant. An opening is formed through the substrate to isolate a portion of the substrate electrically connected to the first interconnect structure. A bump is formed over the first interconnect structure. Conductive vias are formed through the encapsulant and electrically connected to the portion of the substrate. A plurality of bumps is formed over the semiconductor die. A first conductive layer is formed over the encapsulant. A first insulating layer is formed over the first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. Protrusions extend above the substrate.

Abstract: A semiconductor device has a leadframe with a plurality of bodies extending from the base plate. A first semiconductor die is mounted to the base plate of the leadframe between the bodies. An encapsulant is deposited over the first semiconductor die and base plate and around the bodies of the leadframe. A portion of the encapsulant over the bodies of the leadframe is removed to form first openings in the encapsulant that expose the bodies. An interconnect structure is formed over the encapsulant and extending into the first openings to the bodies of the leadframe. The leadframe and bodies are removed to form second openings in the encapsulant corresponding to space previously occupied by the bodies to expose the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with bumps extending into the second openings of the encapsulant to electrically connect to the interconnect structure.

Abstract: A semiconductor device has a substrate with a cavity. A conductive layer is formed within the cavity and over the substrate outside the cavity. A plurality of indentations can be formed in a surface of the substrate opposite the cavity for stress relief. A first semiconductor die is mounted within the cavity. A plurality of conductive vias can be formed through the first semiconductor die. An insulating layer is disposed between the first semiconductor die and substrate with the first conductive layer embedded within the first insulating layer. An encapsulant is deposited over the first semiconductor die and substrate. An interconnect structure is formed over the encapsulant. The interconnect structure is electrically connected to the first semiconductor die and first conductive layer. The substrate is removed to expose the first conductive layer. A second semiconductor die is mounted to the conductive layer over the first semiconductor die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; attaching a component over the base substrate; attaching a component interconnect to the base substrate and a perimeter of the component; mounting a stack device over the component; attaching a base exposed interconnect directly on the component and next to the component interconnect; and forming a base encapsulation over the base substrate, the component, and the component interconnect, the base exposed interconnect partially exposed from the base encapsulation.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a bottom integrated circuit having bottom through silicon vias with a bottom via pitch; mounting outer interconnects over the bottom integrated circuit; and mounting a top integrated circuit between the outer interconnects, the top integrated circuit having top through silicon vias with a top via pitch less than the bottom via pitch.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; attaching a base integrated circuit on the base substrate; forming a base encapsulation, having a base encapsulation top side, on the base substrate and around the base integrated circuit; forming a base conductive via, having a base via head, through the base encapsulation and attached to the base substrate adjacent to the base integrated circuit, the base via head exposed from and coplanar with the base encapsulation top side; mounting an interposer structure over the base encapsulation with the interposer structure connected to the base via head; and forming an upper encapsulation on the base encapsulation top side and partially surrounding the interposer structure with a side of the interposer structure facing away from the base encapsulation exposed.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a bottom integrated circuit having bottom through silicon vias with a bottom via pitch; mounting outer interconnects over the bottom integrated circuit; and mounting a top integrated circuit between the outer interconnects, the top integrated circuit having top through silicon vias with a top via pitch less than the bottom via pitch.