Patents by Inventor Hao Wang

Hao Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220386497
    Abstract: A tray assembly is detachably disposed on a casing and includes a tray body, at least one gear set, a handle, and at least one side cover. The tray body is adapted to be accommodated in the casing. The least one gear set is disposed at a side of the tray body. The at least one gear set has a first engagement portion configured to be engaged with the casing. The handle is rotatably connected to the tray body via the at least one gear set. The at least one side cover is fixed to the tray body and covers the at least one gear set.
    Type: Application
    Filed: August 12, 2021
    Publication date: December 1, 2022
    Inventors: Jun-Hao WANG, Yisheng Chen, SIYUN TAN, LI KE
  • Publication number: 20220384557
    Abstract: A display apparatus and a method for manufacturing the display apparatus are provided. The display apparatus includes: a flexible panel which includes a display region and a non-display region, where the non-display region includes a bending sub-region and a back sub-region connected to the bending sub-region and arranged opposite to the display region, a multiplexer is arranged in the back sub-region; and a shielding electrode layer located on a side of the multiplexer away from the back sub-region, an orthographic projection of the multiplexer onto a plane where the shielding electrode layer is located being within the shielding electrode layer.
    Type: Application
    Filed: February 9, 2021
    Publication date: December 1, 2022
    Inventors: Yu WANG, Linhong HAN, Tingliang LIU, Yi ZHANG, Huijuan YANG, Tinghua SHANG, Yang ZHOU, Pengfei YU, Shun ZHANG, Hao ZHANG, Xiaofeng JIANG, Huijun LI
  • Publication number: 20220384958
    Abstract: An antenna device includes a radio frequency (RF) die, a first dielectric layer, a feeding line, a ground line, a second dielectric layer, and a radiating element. The first dielectric layer is over the RF die. The feeding line is in the first dielectric layer and is connected to the RF die. The ground line is in the first dielectric layer and is spaced apart from the feeding line. The second dielectric layer covers the first dielectric layer. The radiating element is over the second dielectric layer and is not in physically contact with the feeding line.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chuei-Tang WANG, Chung-Hao TSAI, Jeng-Shien HSIEH, Wei-Heng LIN, Kuo-Chung YEE, Chen-Hua YU
  • Publication number: 20220385438
    Abstract: Techniques are described to perform transmission of a reference signal such as a sounding reference signal (SRS). An example wireless communication method includes performing, by a network device, a first transmission that indicates a plurality of partial frequency factor values to a communication device, wherein each partial frequency factor value indicates a number used to determine a reduced number of resource blocks by the communication device to transmit a reference signal; and performing a second transmission, after the first transmission and to the communication device, of one or more bits that indicate a partial frequency factor value from the plurality of partial frequency factor values.
    Type: Application
    Filed: July 22, 2022
    Publication date: December 1, 2022
    Inventors: Yuxin Wang, Hao Wu, Zhaohua Lu, Yong Li
  • Publication number: 20220379870
    Abstract: An unmanned ground vehicle (UGV) includes one or more motors configured to drive one or more wheels of the UGV, a memory storing instructions, and a processor coupled to the one or more motors and the memory. The processor is configured to execute the instructions to cause the UGV to determine location information of a movable target; calculate a direction and a speed for the unmanned ground vehicle based on the determined location information; and drive the one or more motors to move the unmanned ground vehicle in the calculated direction at the calculated speed to follow the movable target when the movable target moves.
    Type: Application
    Filed: March 3, 2022
    Publication date: December 1, 2022
    Applicant: GEOSAT Aerospace & Technology
    Inventors: Hsin-Yuan CHEN, Chien-Hung LIU, Wei-Hao WANG, Yi-Bin LIN, Yi-Chiang YANG
  • Publication number: 20220384333
    Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.
    Type: Application
    Filed: July 26, 2022
    Publication date: December 1, 2022
    Inventors: Yung-Chi Chu, Sih-Hao Liao, Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Publication number: 20220384876
    Abstract: A battery apparatus includes at least two battery units. Each of the battery units includes at least two batteries. A heat insulating pad is disposed between the adjacent two battery units, and at least a pair of the adjacent two batteries belonging to a same battery unit contact each other with largest surfaces of the batteries.
    Type: Application
    Filed: August 2, 2021
    Publication date: December 1, 2022
    Applicants: CALB Co., Ltd., CALB Technology Co., Ltd.
    Inventors: Li Niu, Xinjian Li, Xuan Zhang, Guohua Sun, Zhouli Li, Qixin Guo, Hao Wang
  • Publication number: 20220384589
    Abstract: A method for forming a semiconductor transistor device includes forming a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The channel structure is formed by forming a stack of semiconductor layers. The gate structure is formed wrapping around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are formed on opposite endings of the channel structure. The gate contact is formed on the gate structure. The back-side source/drain contact is formed under the first source/drain epitaxial structure. The second source/drain epitaxial structure is formed to have a concave bottom surface.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang, Kuo-Cheng Chiang
  • Publication number: 20220384509
    Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Kun-Huei Lin, Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Cheng Yuan Wang
  • Publication number: 20220384337
    Abstract: A package structure including an interposer, a semiconductor die, through insulator vias, an insulating encapsulant and a redistribution layer is provided. The interposer includes a core structure having a first and second surface, first metal layers disposed on the first and second surface, second metal layers disposed on the second surface over the first metal layers, and third metal layers disposed on the second surface over the second metal layers. The semiconductor die is disposed on the interposer. The through insulator vias are disposed on the interposer and electrically connected to the plurality of first metal layers. The insulating encapsulant is disposed on the interposer over the first surface and encapsulating the semiconductor die and the plurality of through insulator vias. The redistribution layer is disposed on the insulating encapsulant and electrically connected to the semiconductor die and the plurality of through insulator vias.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chuei-Tang Wang, Tin-Hao Kuo
  • Publication number: 20220384602
    Abstract: An IC structure includes a source epitaxial structure, a drain epitaxial structure, a first silicide region, a second silicide region, a source contact, a backside via rail, a drain contact, and a front-side interconnection structure. The first silicide region is on a front-side surface, a first sidewall of the source epitaxial structure, and a second sidewall of the source epitaxial structure. The second silicide region is on a front-side surface of the drain epitaxial structure. The source contact is in contact with the first silicide region and has a protrusion extending past a backside surface of the source epitaxial structure. The backside via rail is in contact with the protrusion of the source contact. The drain contact is in contact with the second silicide region. The front-side interconnection structure is on a front-side surface of the source contact and a front-side surface of the drain contact.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Huan-Chieh SU, Li-Zhen YU, Chun-Yuan CHEN, Cheng-Chi CHUANG, Shang-Wen CHANG, Yi-Hsun CHIU, Pei-Yu WANG, Ching-Wei TSAI, Chih-Hao WANG
  • Publication number: 20220384332
    Abstract: A semiconductor structure including at least one integrated circuit component is provided. The at least one integrated circuit component includes a first semiconductor substrate and a second semiconductor substrate electrically coupled to the first semiconductor substrate, wherein the first semiconductor substrate and the second semiconductor substrate are bonded through a first hybrid bonding interface, and at least one of the first semiconductor substrate or the second semiconductor substrate includes at least one first embedded capacitor.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Ting Chen, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang
  • Publication number: 20220379225
    Abstract: The present invention provides a method to establish cloned game accounts, when an auction information is posted on the game account trading platform, the game account trading platform will establish a testing game interface according to the game interface under the relevant game account, and generate a cloned game account based on the game objects, so that the buyer user primary account can enter this testing game interface to test the cloned game account.
    Type: Application
    Filed: November 2, 2019
    Publication date: December 1, 2022
    Inventors: Chih-hao CHIEN, Cheng-yu WANG, Wan-chen WU
  • Publication number: 20220379266
    Abstract: A polymer film has a loofah-like structure. It has a fibrous framework structure formed by three-dimensional interwoven and interconnected polymer fibers and a three-dimensional interconnected network pore structure distributed in the fibrous framework structure. The polymer is an organic polymer and the fibrous framework structure is integrally formed by the polymer. The film has a volume porosity of from 50% to 95%. The film is obtained by means of a combination method for atomization pretreatment and non-solvent phase separation. The film can be used in the fields of gas filtration, liquid filtration, oil-water separation, adsorption materials, catalysis, pharmaceutical sustained release materials, anti-adhesion coatings, oil delivery and oil spill interception.
    Type: Application
    Filed: October 27, 2020
    Publication date: December 1, 2022
    Inventors: Yiqun LIU, Jing WANG, Guoyuan PAN, Yang ZHANG, Hao YU
  • Publication number: 20220380817
    Abstract: An amino acid sequence of the transaminase mutant is an amino acid sequence obtained by a mutation of an amino acid sequence is shown in SEQ ID NO: 1. The mutation occurred at least one of the following mutation sites: G17V, L36P, Q40H, G69Y, H70T, L73A, V77G, V77S, V77T, A78I, Y130M, Y130V, Y130T, N132I, N132T, K141S, K142S, K142T, R143P, G144F, G144W, G144Y, E145D, E145S, E145G, K146R, L148A, L148I and the like.
    Type: Application
    Filed: October 25, 2019
    Publication date: December 1, 2022
    Inventors: Hao HONG, Gage JAMES, Yi XIAO, Fang LIU, Na ZHANG, Zujian WANG, Junjie YAN, Wanming SHI, Mujiao ZHANG, Ye LIU
  • Publication number: 20220380385
    Abstract: Disclosed are a pyrimidine five-membered nitrogen heterocyclic derivative, a preparation method thereof and the pharmaceutical use thereof. Specifically disclosed are a pyrimidine five-membered nitrogen heterocyclic derivative represented by general formula (II), a preparation method thereof, a composition containing the derivative, and the use thereof as an SHP2 inhibitor and in the preparation of a medicament for preventing and/or treating tumors or cancer.
    Type: Application
    Filed: June 28, 2020
    Publication date: December 1, 2022
    Inventors: Hao ZOU, Zhengtao LI, Yuanhao WANG, Jian YU, Wei ZHU
  • Publication number: 20220383943
    Abstract: Memory devices are provided. In an embodiment, a memory device includes a static random access memory (SRAM) array. The SRAM array includes a static random access memory (SRAM) array. The SRAM array includes a first subarray including a plurality of first SRAM cells and a second subarray including a plurality of second SRAM cells. Each n-type transistor in the plurality of first SRAM cells includes a first work function stack and each n-type transistor in the plurality of second SRAM cells includes a second work function stack different from the first work function stack.
    Type: Application
    Filed: July 29, 2022
    Publication date: December 1, 2022
    Inventors: Ping-Wei Wang, Chia-Hao Pao, Choh Fei Yeap, Yu-Kuan Lin, Kian-Long Lim
  • Publication number: 20220381978
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a photonic die, an encapsulant and a wave guide structure. The photonic die includes: a substrate, having a wave guide pattern formed at front surface; and a dielectric layer, covering the front surface of the substrate, and having an opening overlapped with an end portion of the wave guide pattern. The encapsulant laterally encapsulates the photonic die. The wave guide structure lies on the encapsulant and the photonic die, and extends into the opening of the dielectric layer, to be optically coupled to the wave guide pattern.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chieh Chang, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang
  • Publication number: 20220382953
    Abstract: Systems and methods for performing reflow modeling in a virtual fabrication environment are discussed. More particularly, the virtual fabrication environment may determine metal or material “reflow” or movement during fabrication of a semiconductor device structure. A reflow modeling step with user-specified parameters may be inserted into a process sequence used during fabrication of the semiconductor device structure.
    Type: Application
    Filed: November 3, 2020
    Publication date: December 1, 2022
    Inventors: Qing Peng Wang, Yu De Chen, Shi-hao Huang, Joseph Ervin, Rui Bao
  • Publication number: 20220383095
    Abstract: In a method for improving converter and compiler operator granularity, a processor extracts an operator granularity from an artificial intelligence framework and an original model. A processor receives device characteristics from a target device. A processor outputs a converter granularity level to a converter based on the operator granularity and the device characteristics. A processor outputs a compiler granularity level to a compiler based on the operator granularity and the device characteristics.
    Type: Application
    Filed: May 27, 2021
    Publication date: December 1, 2022
    Inventors: Li Cao, Zhan Peng Huo, WeiFeng Zhang, Wei Cui, Fei Fei Li, Ren Jie Feng, Han Su, Zhong Hao Wang