Patents by Inventor Hao Wang

Hao Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12367176
    Abstract: Approaches for providing a non-disruptive file move are disclosed. A request to move a target file from the first constituent to the second constituent is received. The file has an associated file handle. The target file in the first constituent is converted to a multipart file in the first constituent with a file location for the new file in the first constituent. A new file is created in the second constituent. Contents of the target file are moved to a new file on the second constituent while maintaining access via the associated file handle via access to the multipart file. The target file is deleted from the first constituent.
    Type: Grant
    Filed: April 24, 2023
    Date of Patent: July 22, 2025
    Assignee: NetApp, Inc.
    Inventors: Richard Parvin Jernigan, IV, Umeshkumar Vasantha Rajasekaran, Ying-Hao Wang, Yuyu Zhou
  • Patent number: 12367569
    Abstract: A method includes forming a package component, the package component comprising an integrated circuit die, attaching the package component to a package substrate; placing a heat spreader over the package component and the package substrate to form an integrated circuit package, wherein a height of the integrated circuit package is in a range from 2.5 mm to 6 mm, and performing a first automatic optical inspection (AOI) process on the integrated circuit package using an AOI apparatus to determine if the orientation and alignment of the heat spreader with regards to the package substrate is within specification, wherein the AOI apparatus comprises a lens that has a maximum depth of field that is greater than the height of the integrated circuit package, and wherein during the first AOI process the depth of field encompasses an entirety of the height of the integrated circuit package.
    Type: Grant
    Filed: April 27, 2022
    Date of Patent: July 22, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: I-Hsuan Chen, Ying-Hao Wang, Chien-Lung Chen, Chien-Chi Tzeng, Hu-Wei Lin
  • Publication number: 20250234582
    Abstract: The present disclosure provides a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. The present disclosure also includes forming a trench between neighboring source/drain features to remove bridging between the neighboring source/drain features. In some embodiments, the trenches between the source/drain features are formed by etching from the backside of the substrate.
    Type: Application
    Filed: March 31, 2025
    Publication date: July 17, 2025
    Inventors: Jung-Hung Chang, Zhi-Chang Lin, Shih-Cheng Chen, Chien Ning YAO, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20250229368
    Abstract: Fully automatic welding forming equipment for a special-shaped three-dimensional workpiece and a welding method is provided. The welding forming equipment includes a base station, a welding robot, a displacement worktable, an auxiliary robot, and a hopper. The welding robot, the auxiliary robot and the hopper are arranged on the base station, and the displacement worktable is arranged between the base stations. The displacement worktable adopts the structure of main and sub double frames and main and sub double rotary power, which has multiple degrees of freedom, and can flexibly adjust the position and angle of the welded parts, realize the welding requirements of any position and angle, and meet the welding operation requirements of complex special-shaped three-dimensional components without manual repair welding operation, and the multi-point welding can be realized through the cooperation of welding robot and auxiliary robot to improve the welding efficiency and quality.
    Type: Application
    Filed: November 27, 2024
    Publication date: July 17, 2025
    Applicant: Tianjin University
    Inventors: Lianyong XU, Kangda HAO, Hao WANG, Yongdian HAN, Lei ZHAO, Wenjing REN, Tianzhu WANG
  • Publication number: 20250234578
    Abstract: The present disclosure provides a semiconductor device and a method of forming the same. A method according to one embodiment of the present disclosure includes forming a plurality of semiconductor nanostructures vertically stacked above a substrate, forming a dielectric structure suspended above a topmost one of the semiconductor nanostructures, forming a plurality of inner spacers interleaving the semiconductor nanostructures, forming an epitaxial feature abutting the semiconductor nanostructures, and forming a gate structure wrapping around each of the semiconductor nanostructures and the dielectric structure.
    Type: Application
    Filed: July 5, 2024
    Publication date: July 17, 2025
    Inventors: Jung-Chien Cheng, Guan-Lin Chen, Shi Ning Ju, Kuo-Cheng Chiang, Chih-Hao Wang
  • Publication number: 20250229409
    Abstract: A rotary translational positioner with multiple degrees of freedom includes support frames, a main rotary dynamic structure, a main frame, an auxiliary dynamic structure, an auxiliary frame, and a worktable, where the main frame is arranged between the support frames, the main rotary dynamic structure is arranged at the end of the main frame and is located between the main frame and the support frame, the auxiliary frame is arranged in the main frame through the auxiliary dynamic structure, the auxiliary dynamic structure is arranged at the front end and the rear end of the auxiliary frame, and the worktable is arranged on the auxiliary frame. A main and auxiliary double frame structure is adopted, the main frame can adjust the position and angle of the whole welding workpiece, and the auxiliary frame can adjust the position and angle of the welding parts.
    Type: Application
    Filed: November 27, 2024
    Publication date: July 17, 2025
    Applicants: Tianjin University, Tianjin Shangde New Technology Co., Ltd., BCEG CIVIL ENGINEERING CO., LTD.
    Inventors: Lianyong XU, Kangda HAO, Hao WANG, Yongdian HAN, Lei ZHAO, Wenjing REN, Tianzhu WANG
  • Publication number: 20250234603
    Abstract: A semiconductor structure includes a plurality of nanosheets, a gate structure, an S/D structure, a stepped structure, and a sidewall spacer. The plurality of nanosheets is disposed over a substrate, wherein the substrate extends along a first direction, and the nanosheets are arranged along a second direction substantially perpendicular to the first direction. The gate structure is disposed over the substrate, wherein the gate structure is disposed between and surrounding the nanosheets. The S/D structure is disposed adjacent to the gate structure and the plurality of nanosheets. The stepped structure is disposed below the S/D structure, wherein the stepped structure overlaps at least one of the nanosheets along the first direction. The sidewall spacer is disposed between the stepped structure and the at least one of the nanosheets. A method of manufacturing the semiconductor structure is also provided.
    Type: Application
    Filed: January 11, 2024
    Publication date: July 17, 2025
    Inventors: TSUNG-HAN CHUANG, JUNG-HUNG CHANG, CHIA-CHENG TSAI, SHIH-CHENG CHEN, KUO-CHENG CHIANG, CHIH-HAO WANG
  • Publication number: 20250234595
    Abstract: Inner spacers between a source/drain region of a nanostructure transistor and sacrificial nanostructure layers of the nanostructure transistor are removed prior to formation of a gate structure of the nanostructure transistor. The sacrificial nanostructure layers are removed, and then the inner spacers are removed. The sacrificial nanostructure layers are then replaced with the gate structure of the nanostructure transistor such that the gate structure and the source/drain region are spaced apart by air gaps that result from the removal of the inner spacers. The dielectric constant (or relative permittivity) of the air gaps between the source/drain region and the gate structure is less than the dielectric constant of the material of the inner spacers. The lesser dielectric constant of the air gaps reduces the amount of capacitance between the source/drain region and the gate structure.
    Type: Application
    Filed: May 22, 2024
    Publication date: July 17, 2025
    Inventors: Hsien-Chih HUANG, Guang-Lin CHEN, Pei-Yu WANG, Chia-Hao YU, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20250234364
    Abstract: Provided are methods for side link communication, terminal devices, and network devices. A method comprises: according to a target candidate starting symbol, a terminal device determines in a first time slot symbols used for measuring a sidelink received signal strength indicator (SL RSSI). The symbol in the first time slot used for measuring the SL RSSI can be determined on the basis of the condition of candidate starting symbols.
    Type: Application
    Filed: April 3, 2025
    Publication date: July 17, 2025
    Applicant: GUANGDONG OPPO MOBILE TELECOMMUNICATIONS CORP., LTD.
    Inventors: Yi DING, Hao WANG
  • Patent number: 12361258
    Abstract: A method for predicting and controlling a water level of a series water conveyance canal on the basis of a fuzzy neural network is disclosed. The method includes: performing the relationship between a sluice opening degree and an open canal control water level by means of a fuzzy neural network, and constructing an upstream water level controller of a coupled predictive control algorithm; solving an optimal control rate of the upstream water level controller using a gradient optimization algorithm on the basis of a control target of the upstream water level controller; and generating a control strategy by collecting actually measured water level change information and multiplying the actually measured water level change information by the optimal control rate on the basis of the solved optimal control rate, thereby fulfilling the object of predicting and controlling the water level.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: July 15, 2025
    Assignees: CHINA THREE GORGES CORPORATION, CHINA INSTITUTE OF WATER RESOURCES AND HYDROPOWER RESEARCH
    Inventors: Hao Wang, Xiaohui Lei, Huichao Dai, Lingzhong Kong, Zhao Zhang, Chao Wang, Heng Yang, Yongnan Zhu, Zhaohui Yang
  • Patent number: 12363964
    Abstract: A device includes a substrate and a transistor on the substrate. The transistor includes a channel region that has at least one semiconductor nanostructure, and a gate electrode. A source/drain region is disposed adjacent to a first side of the channel region along a first direction. A hybrid fin structure is disposed adjacent to a second side of the channel region along a second direction that is transverse to the first direction. The hybrid fin structure includes a first hybrid fin dielectric layer and a second hybrid fin dielectric layer. The first and second hybrid fin dielectric layers include silicon, oxygen, carbon and nitrogen and have a different concentration of at least one of silicon oxygen, carbon, or nitrogen from one another.
    Type: Grant
    Filed: May 12, 2022
    Date of Patent: July 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Yuan Chen, Huan-Chieh Su, Li-Zhen Yu, Cheng-Chi Chuang, Chih-Hao Wang
  • Patent number: 12363946
    Abstract: A device includes a device layer comprising a first transistor and a second transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure comprising a first dielectric layer on the backside of the device layer, wherein a semiconductor material is disposed between the first dielectric layer and a first source/drain region of the first transistor; a contact extending through the first dielectric layer to a second source/drain region of the second transistor; and a first conductive line electrically connected to the second source/drain region of the second transistor through the contact.
    Type: Grant
    Filed: May 6, 2024
    Date of Patent: July 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Zhen Yu, Huan-Chieh Su, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang
  • Patent number: 12363939
    Abstract: A semiconductor device structure includes a source/drain (S/D) feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a first silicide layer in contact with the first surface of the S/D feature, a second silicide layer opposing the first silicide layer and in contact with the second surface of the S/D feature, a front side S/D contact in contact with the first silicide layer, a back side S/D contact in contact with the second silicide layer, a semiconductor channel layer comprising a sidewall in contact with the sidewall of the source/drain feature, a gate dielectric layer surrounding exposed surfaces of the semiconductor layer, an interlayer dielectric (ILD) disposed adjacent to the gate dielectric layer, and a liner disposed between and in contact with the ILD and the gate dielectric layer.
    Type: Grant
    Filed: March 20, 2024
    Date of Patent: July 15, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Li-Zhen Yu, Shih-Chuan Chiu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang, Huan-Chieh Su
  • Patent number: 12361282
    Abstract: In a method for improving converter and compiler operator granularity, a processor extracts an operator granularity from an artificial intelligence framework and an original model. A processor receives device characteristics from a target device. A processor outputs a converter granularity level to a converter based on the operator granularity and the device characteristics. A processor outputs a compiler granularity level to a compiler based on the operator granularity and the device characteristics.
    Type: Grant
    Filed: May 27, 2021
    Date of Patent: July 15, 2025
    Assignee: International Business Machines Corporation
    Inventors: Li Cao, Zhan Peng Huo, WeiFeng Zhang, Wei Cui, Fei Fei Li, Ren Jie Feng, Han Su, Zhong Hao Wang
  • Publication number: 20250221893
    Abstract: An automatic pushing type complementary food device which includes a clamping body, an elastic member and a colander, wherein the inner side of the clamping body is connected to one end of an elastic member in a clamped manner, the outer side of the clamping body is connected to the colander in a clamped manner, the other end of the elastic member extends into the colander, a complementary food cavity is provided in the colander, and overflow holes are provided in the outer wall of the colander.
    Type: Application
    Filed: March 5, 2025
    Publication date: July 10, 2025
    Applicant: Beijing Shenchuang Century Information Technology Co., Ltd.
    Inventor: Hao WANG
  • Publication number: 20250227849
    Abstract: A manufacturing method of an embedded component package structure includes the following steps: providing a carrier and forming a semi-cured first dielectric layer on the carrier, the semi-cured first dielectric layer having a first surface; providing a component on the semi-cured first dielectric layer, and respectively providing heat energies from a top and a bottom of the component to cure the semi-cured first dielectric layer; forming a second dielectric layer on the first dielectric layer to cover the component; and forming a patterned circuit layer on the second dielectric layer, the patterned circuit layer being electrically connected to the component.
    Type: Application
    Filed: March 27, 2025
    Publication date: July 10, 2025
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chien-Fan CHEN, Chien-Hao WANG
  • Publication number: 20250227870
    Abstract: A holding mechanism is provided, and includes a frame, a carrier, and a bracket. The frame is used to accommodate an electronic component. The carrier is affixed to the frame. The bracket has a sliding rail. The carrier is connected to the bracket via the sliding rail so that the frame may be rotated relative to the frame. Accordingly, additional electronic components can be disposed above the chassis, and the convenience of installing or removing electronic components can be improved.
    Type: Application
    Filed: March 22, 2024
    Publication date: July 10, 2025
    Inventors: Jun-Hao WANG, Hua Jun LIANG, Zhao Ping FU
  • Publication number: 20250222226
    Abstract: Disclosed are a main unit of ventilation device, a ventilation device, and a medical device, including a housing, a gas path assembly and a pressure monitoring assembly. The housing is provided with an inner cavity and an outer side of the housing is recessed inward to form an accommodating cavity. The gas path assembly includes an oxygen control assembly and an output interface. The oxygen control assembly is connected with an oxygen supply apparatus, the output interface is connected with an inspiratory branch. the accommodation cavity is configured to removably accommodate at least one portable medical device. The portable medical device includes an interface side which is provided with a cable interface, wherein when the portable medical device is accommodated inside the accommodation cavity, the output interface and the cable interface are located on different sides of the housing, so as to expand its function and broaden a use scope.
    Type: Application
    Filed: March 26, 2025
    Publication date: July 10, 2025
    Applicant: SHENZHEN MINDRAY BIO-MEDICAL ELECTRONICS CO., LTD.
    Inventors: Huan HOU, Dengshui LAI, Kai WEI, Hao WANG
  • Patent number: D1085620
    Type: Grant
    Filed: January 16, 2025
    Date of Patent: July 22, 2025
    Inventor: Hao Wang
  • Patent number: D1084401
    Type: Grant
    Filed: October 3, 2024
    Date of Patent: July 15, 2025
    Inventor: Hao Wang