Abstract: Disclosed are a refrigerator and a door assembly therefor; the door assembly includes two oppositely arranged doors and a turnover beam assembly, wherein the turnover beam assembly includes: a turnover beam body; a guide part extending out of one end of the turnover beam body and configured to be fitted with a retainer provided on a cabinet of the refrigerator; a locking part telescopically provided in the turnover beam body and having a first end fixedly connected with the guide part and a second end having a locking portion, the locking part having an unlocking state and a locking state. In the present invention, an anti-turnover function of the turnover beam body is achieved using the locking part and the elastic part, which improves coordination among all components, makes an internal structure of the turnover beam assembly more reasonable, achieves high practicability, and realizes easy popularization.

Abstract: Embodiments of the present disclosure provide a control method and a control device for an electric switch, and an electric switch. The control method includes: obtaining a voltage signal representing a control voltage, the control voltage input to the electric switch and applied to an electromagnetic assembly of the electric switch via a regulation device of the electric switch; determining, based on the voltage signal obtained, a target control parameter for the electromagnetic assembly, the target control parameter comprising at least one of a target voltage and a target current; and generating, based on the target control parameter determined, a control signal for the regulation device, to cause the electromagnetic assembly to drive a movable contact of the electric switch to contact a static contact of the electric switch. The solution of the present disclosure can effectively reduce wear of contact points of contacts, to thus prolong the service life of the electric switch.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a first source/drain region disposed under a well portion, a second source/drain region disposed adjacent the first source/drain region, a dielectric material disposed between the first and second source/drain regions, and a conductive contact having a first portion disposed under the first source/drain region and a second portion disposed adjacent the first source/drain region. The second portion is disposed in the dielectric material. The structure further includes a conductive feature disposed in the dielectric material, and the conductive feature is electrically connected to the conductive contact. The conductive feature has a top surface that is substantially coplanar with a top surface of the well portion.

Abstract: A ship navigation display system is set in a ship and includes a communications device, sensing device, first computing device, second computing device and wearable device. The communications device receives first coordinate information corresponding to a ship. The sensing device senses second coordinate information corresponding to a first ship around the ship. The first computing device is communicably connected with the communications device and calculates a collision probability according to the first and second coordinate information. When the collision probability is greater than a threshold value, the first computing device transmits a collision prediction signal. The second computing device receives the collision prediction signal and projects the second coordinate information corresponding to the first ship to a virtual coordinate in a virtual space.

Abstract: A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.

Abstract: The present disclosure relates to an operating table, the operating table comprising a table top, a table top support and a column with a column head, wherein the sealing device is bellows assembled below the column head, or an adhesive in a hole and/or window on the holder of the cable, or a sealing gasket between the receiver and the column head, or a shield sealingly attached to the column head below the gear. The present disclosure further relates to control equipment, a lifting device, an intelligent charger, a column guide system for an operating table, as well as an operating table including the same.

Abstract: A calibration apparatus includes a processor, an alignment device, and an arm. The alignment device captures images in a three-dimensional space, and a tool is arranged on a flange of the arm. The processor records a first matrix of transformation between an end-effector coordinate-system and a robot coordinate-system, and performs a tool calibration procedure according to the images captured by the alignment device for obtaining a second matrix of transformation between a tool coordinate-system and the end-effector coordinate-system. The processor calculates relative position of a tool center point of the tool in the robot coordinate-system based on the first and second matrixes, and controls the TCP to move in the three-dimensional space for performing a positioning procedure so as to regard points in an alignment device coordinate-system as points of the TCP, and calculates the relative positions of points in the alignment device coordinate-system and in the robot coordinate-system.

Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.

Abstract: A display device is disclosed. The display device includes an array substrate and at least two driving units. The array substrate includes a peripheral region and a display region, the array substrate further includes a peripheral grounding line and a test line, wherein the peripheral grounding line is located in the peripheral region, and the test line is located in the peripheral region. The at least two driving units are located on at least one side of the array substrate, the driving unit includes at least two grounding pins, a grounding pin of at least one of the driving units is connected to the peripheral grounding line, and each of at least one grounding pin of one of two adjacent driving units is electrically connected to a corresponding grounding pin of the other adjacent driving unit.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: A gas extraction device for metal mineral inclusions and a gas extraction method therefor are provided, the device includes a base plate, an annular carrier, sealing covers, a grinding assembly, a vacuum assembly, a gas-gathering assembly and a mass spectrometer. The annular carrier is disposed on the base plate, multiple grinding chambers are defined and evenly distributed in a circular shape on the annular carrier, the sealing covers are disposed at openings of the grinding chambers, the grinding assembly includes grinding hammers, and the grinding hammers penetrate through the sealing covers and extend into the grinding chambers. Side walls of each grinding chamber defines a first through hole and a second through hole. The vacuum assembly is communicated with the grinding chambers through the first through holes. The gas-gathering assembly is communicated with the grinding chambers through the second through holes. The mass spectrometer is communicated with the gas-gathering assembly.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to one embodiment includes an active region including a channel region and a source/drain region adjacent the channel region, a gate structure over the channel region of the active region, a source/drain contact over the source/drain region, a dielectric feature over the gate structure and including a lower portion adjacent the gate structure and an upper portion away from the gate structure, and an air gap disposed between the gate structure and the source/drain contact. A first width of the upper portion of the dielectric feature along a first direction is greater than a second width of the lower portion of the dielectric feature along the first direction. The air gap is disposed below the upper portion of the dielectric feature.

Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: The present disclosure provides a video processing method, including: determining, according to a consulting message, a target short video corresponding to the consulting message; and pushing the target short video to a terminal sending the consulting message. The present disclosure further provides a live streaming processing method, an electronic apparatus, a live streaming system, a terminal, and a computer-readable storage medium. The video processing method can improve the user experience during a live streaming process.

Abstract: The disclosure provides a solar device. The solar device includes: a solar panel, having a first surface and a second surface arranged oppositely; and a support assembly, used to support the solar panel, herein the support assembly includes a support base and a support rod, the support base is arranged on the second surface, the support base is provided with an upper mounting hole and a lower mounting hole, the upper mounting hole and the lower mounting hole are arranged on the support base at intervals along a vertical direction, and the support rod may be selectively connected with the upper mounting hole or the lower mounting hole to adjust the inclination angle of the solar panel. Through a technical scheme provided by this disclosure, problems in an existing technology that the transportation is inconvenient and the power generation efficiency is low may be solved.

Abstract: This disclosure relates to a video cropping method and apparatus, storage medium, and electronic device. The present disclosure method: acquiring an original video to be cropped; performing frame extraction processing on the original video to obtain a plurality of target video frames; determining, for each of the target video frames, a target candidate cropping box corresponding to the target video frame according to a main content in the target video frame; performing interpolation processing according to the target candidate cropping box corresponding to each of the target video frames to determine a target cropping box corresponding to each frame picture in the original video; and cropping the original video according to the target cropping box corresponding to the each frame picture.

Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.