Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

Abstract: A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.

Abstract: A substrate processing system having a processing chamber for etching a layer on a substrate is provided. The system includes a chuck upon which the substrate is disposed during etching. The system also includes the chamber being divided into a plasma generating region and a substrate processing region by a separating plate structure. The system further includes a plasma source for generating plasma in the plasma generating region. The system further includes logic for introducing a first gas into the chamber, wherein the gas is suitable for etching the layer. The logic also allows the first gas to be present in the chamber for a period of time sufficient to cause adsorption of at least some of the first gas into the layer. The logic further replaces the first gas with an inert gas, generates metastables from the inert gas, and etches the layer with the metastables.

Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

Abstract: A mud retort assembly includes a retort that heats a fluid and thereby generates vapors, a condenser in fluid communication with the retort to at least partially condense the vapors and thereby generate a liquid, a condensate collector that receives the liquid and residual vapors via an outlet pipe of the condenser, and a collector plug having a frustoconical body that extends partially into the condensate collector at an opening to the condensate collector. The collector plug defines a central aperture that receives the outlet pipe and has an annular flange extending radially outward from the frustoconical body to rest on the condensate collector at the opening.

Abstract: A semiconductor substrate processing system includes a chamber that includes a processing region and a substrate support. The system includes a top plate assembly disposed within the chamber above the substrate support. The top plate assembly includes first and second sets of plasma microchambers each formed into the lower surface of the top plate assembly. A first network of gas supply channels are formed through the top plate assembly to flow a first process gas to the first set of plasma microchambers to be transformed into a first plasma. A set of exhaust channels are formed through the top plate assembly. The second set of plasma microchambers are formed inside the set of exhaust channels. A second network of gas supply channels are formed through the top plate assembly to flow a second process gas to the second set of plasma microchambers to be transformed into a second plasma.

Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

Abstract: Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

Abstract: A substrate support for a substrate processing system includes a baseplate, a bond layer provided on the baseplate, and a ceramic layer arranged on the bond layer. The ceramic layer includes a first region and a second region located radially outward of the first region, the first region has a first thickness, the second region has a second thickness, and the first thickness is greater than the second thickness.

Abstract: A chamber filler kit for balancing electric fields in a dielectric etch chamber is provided. A transport module filler comprises an electrical conductive body, an etch resistant surface, wherein the etch resistant surface comprises an inner curved surface, which matches a partial cylindrical bore of the etch chamber, and a wafer transport aperture, wherein the transport module filler fits into a transport aperture of the etch chamber. A transport module sealer plate is adapted to be mechanically and electrically connected to the partially cylindrical chamber body and the transport module filler. A bias housing filler is adapted to be mechanically and electrically connected to a bias housing wall and comprises a conductive body and an etch resistant surface, wherein the etch resistant surface comprises a curved surface, which matches the partial cylindrical bore.

Abstract: Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

Abstract: A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with respect to each other at a frequency greater than a frequency of the states. The method includes providing the pulsed signal to control power of a radio frequency (RF) signal that is generated by an RF generator. The power is controlled to be synchronous with the pulsed signal.

Abstract: Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.

Abstract: In some embodiments, an encryption system secures data using a homomorphic encryption. The encryption system encrypts a number by encrypting a number identifier of the number and combining the number and the encrypted number identifier using a mathematical operation to generate an encrypted number. The encrypted numbers may be stored at a server system along with their number identifiers. The server system can then generate an aggregation (e.g., sum) of the encrypted numbers and provide the aggregation, the encrypted numbers, and the number identifiers. The encryption system can then separate the aggregation of the numbers from the aggregation of the encrypted numbers using an inverse of the mathematical operation used in the encryption to effect removal of an aggregation of the encrypted number identifiers of the numbers from the aggregation of the encrypted numbers. The separated aggregation of the numbers is an aggregation of the plurality of the numbers.

Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

Abstract: A lithographic apparatus including a first body including a heat source, a second body and a heater device is presented. The second body has a facing surface facing the first body via a gap between the first and second bodies. The heat source is for providing a heat flux to the second body via the gap. The heater device is attached to the facing surface. The heater device is configured to provide a further heat flux to the second body.

Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.

Abstract: A heating plate for use in a substrate support is configured to provide temperature profile control of a substrate supported on the substrate support in a vacuum chamber of a substrate processing apparatus. The heating plate includes an independently controllable heater zones operable to tune a temperature profile on an upper surface of the heating plate. The heater zones are each powered by two or more power lines wherein each power line is electrically connected to a different group of the heater zones and each respective heater zone is electrically connected to a different pair of power lines.

Abstract: Technologies are disclosed for generating and publishing multi-platform application binaries from hosted websites or website source code. A developer can provide source code for a website or a link to a hosted website and identify target platforms for which application binaries should be created. The website is then modified for optimized presentation on devices on the specified target platforms. For example, page layouts, menu styles, image resolutions, and other aspects of the website can be modified for presentation on a mobile device, a tablet, a set top box, or other type of device. Source code is then generated for the target platforms that includes a web view component for rendering the website. A cross-platform compilation service then compiles the source code to generate native applications for the target platforms. The generated applications can then be provided to the developer or automatically submitted to application stores associated with the target platforms.