Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Abstract: A semiconductor device comprising: a substrate; a terminal on the substrate's first surface; a first electrode on the first surface connected to the terminal; an electronic element on the substrate's second surface; a second electrode connected to the electronic element; a groove on the second surface leading to the second electrode; a conductive portion inside the grove connected to the second electrode's rear face; a first wiring on the first surface connected to the first electrode; a second wiring connecting the first wiring and the terminal; a stress-absorbing layer between the substrate and terminal; a land connecting the first wiring and the second wiring, the land opening a part of the stress-absorbing layer and exposing the first wiring, the land being in a region surrounded by terminals, and the land being along a straight line connecting the centers of diagonal terminals, with the region between the terminals.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A semiconductor device comprising: a substrate; a terminal on the substrate's first surface; a first electrode on the first surface connected to the terminal; an electronic element on the substrate's second surface; a second electrode connected to the electronic element; a groove on the second surface leading to the second electrode; a conductive portion inside the grove connected to the second electrode's rear face; a first wiring on the first surface connected to the first electrode; a second wiring connecting the first wiring and the terminal; a stress-absorbing layer between the substrate and terminal; a land connecting the first wiring and the second wiring, the land opening a part of the stress-absorbing layer and exposing the first wiring, the land being in a region surrounded by terminals, and the land being along a straight line connecting the centers of diagonal terminals, with the region between the terminals.

Abstract: A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.

Abstract: A semiconductor device includes n1 first interconnects (n is an integer larger than one) respectively formed on first electrodes and extending over a first resin protrusion, and n2 second interconnects (n2<n1) respectively formed on second electrodes and extending over a second resin protrusion. The first and second resin protrusions are formed of an identical material, have an identical width, and extend longitudinally. The first interconnects extends to intersect a longitudinal axis of the first resin protrusion, and each of the first interconnects has a first width W1 on the first resin protrusion. The second interconnects extends to intersect a longitudinal axis of the second resin protrusion, and each of the second interconnects has a second width W2 (W1<W2) on the second resin protrusion. The relationship W1×n1=W2×n2 is satisfied.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.

Abstract: A semiconductor device includes n1 first interconnects (n is an integer larger than one) respectively formed on first electrodes and extending over a first resin protrusion, and n2 second interconnects (n2<n1) respectively formed on second electrodes and extending over a second resin protrusion. The first and second resin protrusions are formed of an identical material, have an identical width, and extend longitudinally. The first interconnects extends to intersect a longitudinal axis of the first resin protrusion, and each of the first interconnects has a first width W1 on the first resin protrusion. The second interconnects extends to intersect a longitudinal axis of the second resin protrusion, and each of the second interconnects has a second width W2 (W1<W2) on the second resin protrusion. The relationship W1×n1=W2×n2 is satisfied.

Abstract: A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.

Abstract: A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.

Abstract: A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.

Abstract: An electronic component includes: a semiconductor substrate having a first surface and a second surface opposing to the first surface; a trans-substrate conductive plug that penetrates the semiconductor substrate from the first surface to the second surface; an electronic element provided in the vicinity of the first surface of the semiconductor; and a sealing member that seals the electronic element between the sealing member and the first surface, wherein the electronic element is electrically connected to the trans-substrate conductive plug.

Abstract: An electronic component includes: a semiconductor substrate having a first surface and a second surface opposing to the first surface; a trans-substrate conductive plug that penetrates the semiconductor substrate from the first surface to the second surface; an electronic element provided in the vicinity of the first surface of the semiconductor; and a sealing member that seals the electronic element between the sealing member and the first surface, wherein the electronic element is electrically connected to the trans-substrate conductive plug.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A method of manufacture of an electronic substrate, having a process of embedding electronic components in a substrate, and a process of ejecting liquid droplets containing a conductive material, to form a wiring pattern connected to the external connection electrodes of the electronic components embedded in the substrate.

Abstract: A semiconductor device includes: a semiconductor substrate having an active surface and a back surface; an integrated circuit formed on the active surface; a feedthrough electrode penetrating the semiconductor substrate, and projecting from the active surface and the back surface; a first resin layer formed on the active surface, having a thickness greater than a height of a portion of the feedthrough electrode that projects from the active surface, and having an opening portion for exposing at least a portion of the feedthrough electrode; a wiring layer which is formed on the first resin layer, and which is connected to the feedthrough electrode through the opening portion; and an external connecting terminal connected to the wiring layer.