Abstract: A semiconductor device includes: a semiconductor substrate having an active surface and a back surface; an integrated circuit formed on the active surface; a feedthrough electrode penetrating the semiconductor substrate, and projecting from the active surface and the back surface; a first resin layer formed on the active surface, having a thickness greater than a height of a portion of the feedthrough electrode that projects from the active surface, and having an opening portion for exposing at least a portion of the feedthrough electrode; a wiring layer which is formed on the first resin layer, and which is connected to the feedthrough electrode through the opening portion; and an external connecting terminal connected to the wiring layer.

Abstract: An electronic component includes: a semiconductor substrate having a first surface and a second surface opposing to the first surface; a trans-substrate conductive plug that penetrates the semiconductor substrate from the first surface to the second surface; an electronic element provided in the vicinity of the first surface of the semiconductor; and a sealing member that seals the electronic element between the sealing member and the first surface, wherein the electronic element is electrically connected to the trans-substrate conductive plug.

Abstract: A test probe having a conductive part electrically connected to terminals of a test-object device, including: a silicon substrate; a protrusion made of resin provided on the silicon substrate; a first conductive part which is provided on the protrusion and comes in contact with the terminals; and a second conductive part which is provided in a region other than a region having the protrusion on the silicon substrate and is electrically connected to the first conductive part.

Abstract: A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.

Abstract: A panel for an electro-optical apparatus, includes a substrate, a plurality of wires formed on the substrate, convex portions formed from resin and provided either on the plurality of wires or on the substrate, conductive layers provided so as to cover at least a portion of the surfaces of the convex portions, and that are electrically connected to the respective wires, and a plurality of external connection terminals for electrically connecting electronic components, formed by the convex portions and the conductive layers.

Abstract: A semiconductor device comprising: a semiconductor element (10) having a plurality of electrodes (12); an interconnect pattern (20) electrically connected to the electrodes (12); a plurality of laminated insulating layers (41, 42 and 43); and a plurality of external terminals (30) electrically connected to the interconnect pattern (20). A plurality of holes (44, 46, and 48) are respectively formed in the insulating layers (41, 42, and 43) to form an opening portion (40) communicating from the hole (48) in the highest insulating layer (43) to the hole (44) in the lowest insulating layer (41). An external terminal (30) is provided within the opening portion (40), and the second hole (46) formed in the higher positioned second insulating layer (42) is larger than the first hole (44) formed in the lower positioned first insulating layer (41).

Abstract: A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; a plurality of resin layers; a plurality of wirings; and a plurality of external terminals coupled to the wirings. First wirings of the plural wirings are formed at the bottom of a first resin layer and second wirings are formed at the top of the first resin layer.

Abstract: A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.

Abstract: A resin layer is formed on a semiconductor substrate in which a plurality of integrated circuits are formed. In the surface of the resin layer, a plurality of recesses are formed. On the resin layer, an interconnecting line is formed to pass along any of the recesses. The semiconductor substrate is cut into a plurality of semiconductor chips. Each recess is formed to have an opening width less than the thickness of the interconnecting line, and a depth of at least 1 &mgr;m.

Abstract: A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.

Abstract: A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.

Abstract: A method of manufacturing a semiconductor device comprising a step of forming a plurality of resin layers, an interconnect connected electrically to an electrode of each of a plurality of semiconductor elements, and an external terminal connected electrically to the interconnect, on an aggregate of semiconductor elements having an electrode, and a step of cutting the aggregate, wherein at least one resin layer among the plurality of resin layers is formed avoiding a cutting region of the aggregate.

Abstract: A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.

Abstract: A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.

Abstract: A flat plate member with gear portion is formed to a predetermined shape by pressing a flat steel raw material having a composition comprising, by weight, 0.10-0.18% C, less than 0.03% Si, 0.60-1.50% Mn, less than 0.020% P, less than 0.013% S, 0.001-0.004% B and the balance Fe with inevitable impurities, wherein quenching is performed on only the gear portion.

Abstract: A method of manufacturing a semiconductor device includes: a first step of forming a first through hole that penetrates the location of the electrode in a semiconductor element having an electrode; a second step of providing an insulating material in a region including an inside of the first through hole 18, in such a manner that a second through hole is provided penetrating through the insulating material; and a third step of providing a conductive member within the second through hole that penetrates through at least the insulating material in the inside of the first through hole.

Abstract: A flat plate member with gear portion is formed to a predetermined shape by pressing a flat steel raw material having a composition comprising, by weight, 0.10-0.18% C, less than 0.03% Si, 0.60-1.50% Mn, less than 0.020% P, less than 0.013% S, 0.001-0.004% B and the balance Fe with inevitable impurities, wherein quenching is performed on only the gear portion.

Abstract: A method of manufacturing a semiconductor device comprising a step of forming a plurality of resin layers, an interconnect connected electrically to an electrode of each of a plurality of semiconductor elements, and an external terminal connected electrically to the interconnect, on an aggregate of semiconductor elements having an electrode, and a step of cutting the aggregate, wherein at least one resin layer among the plurality of resin layers is formed avoiding a cutting region of the aggregate.