Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Abstract: A semiconductor device includes n1 first interconnects (n is an integer larger than one) respectively formed on first electrodes and extending over a first resin protrusion, and n2 second interconnects (n2<n1) respectively formed on second electrodes and extending over a second resin protrusion. The first and second resin protrusions are formed of an identical material, have an identical width, and extend longitudinally. The first interconnects extends to intersect a longitudinal axis of the first resin protrusion, and each of the first interconnects has a first width W1 on the first resin protrusion. The second interconnects extends to intersect a longitudinal axis of the second resin protrusion, and each of the second interconnects has a second width W2 (W1<W2) on the second resin protrusion. The relationship W1×n1=W2×n2 is satisfied.

Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Abstract: A panel for an electro-optical apparatus, includes a substrate, a plurality of wires formed on the substrate, convex portions formed from resin and provided either on the plurality of wires or on the substrate, conductive layers provided so as to cover at least a portion of the surfaces of the convex portions, and that are electrically connected to the respective wires, and a plurality of external connection terminals for electrically connecting electronic components, formed by the convex portions and the conductive layers.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; first wirings coupled to the electrodes and directed toward a center of the semiconductor element from a portion coupled to the electrodes; second wirings coupled between the first wirings and external terminals, the second wirings being directed to an outer area of the semiconductor element relative to the center; and at least one resin layer formed between the first wirings and the second wirings.

Abstract: A test probe having a conductive part electrically connected to terminals of a test-object device, including: a silicon substrate; a protrusion made of resin provided on the silicon substrate; a first conductive part which is provided on the protrusion and comes in contact with the terminals; and a second conductive part which is provided in a region other than a region having the protrusion on the silicon substrate and is electrically connected to the first conductive part.

Abstract: A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.

Abstract: A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection.

Abstract: A method of manufacturing a semiconductor device includes (a) forming a first resin layer on a semiconductor substrate including an electrode pad and a passivation film, (b) curing the first resin layer, (c) forming a second resin layer which slopes more gently than the cured first resin layer on at least a lower portion of the first resin layer, (d) curing the second resin layer to form a resin protrusion including the first and second resin layers, and (e) forming a conductive layer which is electrically connected with the electrode pad and passes over the resin protrusion.

Abstract: A test probe having a conductive part electrically connected to terminals of a test-object device, including: a silicon substrate; a protrusion made of resin provided on the silicon substrate; a first conductive part which is provided on the protrusion and comes in contact with the terminals; and a second conductive part which is provided in a region other than a region having the protrusion on the silicon substrate and is electrically connected to the first conductive part.

Abstract: A method of manufacturing a semiconductor device includes (a) forming a first resin layer on a semiconductor substrate including an electrode pad and a passivation film, (b) curing the first resin layer, (c) forming a second resin layer which slopes more gently than the cured first resin layer on at least a lower portion of the first resin layer, (d) curing the second resin layer to form a resin protrusion including the first and second resin layers, and (e) forming a conductive layer which is electrically connected with the electrode pad and passes over the resin protrusion.

Abstract: A semiconductor device includes: a semiconductor substrate including a first face and a second face on a side opposite to the first face; an external connection terminal formed on the first face of the semiconductor substrate; a first electrode formed on the first face of the semiconductor substrate and electrically connected to the external connection terminal; an electronic element formed on or above the second face of the semiconductor substrate; a second electrode electrically connected to the electronic element and having a top face and a rear face; a groove portion formed on the second face of the semiconductor substrate and having a bottom face including at least part of the rear face of the second electrode; and a conductive portion formed in the groove portion and electrically connected to the rear face of the second electrode.

Abstract: A test probe for testing a semiconductor device, includes: a substrate having a first surface and a second surface; an input projection portion formed on the first surface; an output projection portion formed on the first surface; input contacting portions, each of which is in contact with each of the input terminals and is formed on the input projection portion; output contacting portions, each of which is in contact with each of the output terminals and is formed on the output projection portion; input conductive portions formed on the first surface, each of which is electrically connected to each of the input contacting portions; and output conductive portions formed on the first surface, each of which is electrically connected to each of the output contacting portions.

Abstract: A method of manufacture of an electronic substrate, having a process of embedding electronic components in a substrate, and a process of ejecting liquid droplets containing a conductive material, to form a wiring pattern connected to the external connection electrodes of the electronic components embedded in the substrate.

Abstract: A resin layer is formed on a semiconductor substrate in which a plurality of integrated circuits are formed. In the surface of the resin layer, a plurality of recesses are formed. On the resin layer, an interconnecting line is formed to pass along any of the recesses. The semiconductor substrate is cut into a plurality of semiconductor chips. Each recess is formed to have an opening width less than the thickness of the interconnecting line, and a depth of at least 1 ?m.

Abstract: A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.

Abstract: A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.

Abstract: A semiconductor device is provided comprising: a semiconductor element including a plurality of electrodes; a plurality of resin layers; a plurality of wirings; and a plurality of external terminals coupled to the wirings. First wirings of the plural wirings are formed at the bottom of a first resin layer and second wirings are formed at the top of the first resin layer.

Abstract: A method of manufacturing a multi-layered substrate includes providing an electronic component on a surface of a substrate so that a terminal of the electronic component faces upward. The method also includes providing a first insulation pattern on the surface so as to fill a step generated due to a thickness of the electronic component.

Abstract: A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.