Abstract: First test beams (464a-d), after passing through an optical system on optical paths that differ in pairs, impinge on a first measurement region (461) at angles that differ in pairs with respect to the measurement plane. Second test beams (465a-d), after passing through the optical system on optical paths that differ in pairs, impinge on a second measurement region (462) at angles that differ in pairs, wherein the second region differs from the first. A value of a first measurement variable of the test beam at the first region is detected for each of the first test beams, and comparably for a second measurement variable at the second region for the second test beams. Impingement regions (467a-d) on reference surface(s) (466, 471) of the optical system are determined and a spatial diagnosis distribution of a property of the reference surface(s) for each test beam is calculated.

Abstract: First test beams (464a-d), after passing through an optical system on optical paths that differ in pairs, impinge on a first measurement region (461) at angles that differ in pairs with respect to the measurement plane. Second test beams (465a-d), after passing through the optical system on optical paths that differ in pairs, impinge on a second measurement region (462) at angles that differ in pairs, wherein the second region differs from the first. A value of a first measurement variable of the test beam at the first region is detected for each of the first test beams, and comparably for a second measurement variable at the second region for the second test beams. Impingement regions (467a-d) on reference surface(s) (466, 471) of the optical system are determined and a spatial diagnosis distribution of a property of the reference surface(s) for each test beam is calculated.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element with an index of refraction greater than 1.6. This element has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.

Abstract: The disclosure relates to an optical system of an illumination device of a microlithographic projection exposure apparatus, including at least one first light-conductance-increasing element having a plurality of diffractively or refractively beam-deflecting structures extending in a common first preferred direction the light-conductance-increasing element having an optically uniaxial crystal material in such a way that the optical crystal axis of the crystal material is substantially parallel or substantially perpendicular to the first preferred direction.

Abstract: In certain aspects, the disclosure relates to a projection objective, in particular for a microlithography exposure apparatus, serving to project an image of an object field in an object plane onto an image field in an image plane. The projection objective includes a system aperture stop and refractive and/or reflective optical elements that are arranged relative to an optical system axis. The centroid of the image field is arranged at a lateral distance from the optical system axis). The system aperture stop has an inner aperture stop border which encloses an aperture stop opening and whose shape is defined by a border contour curve. The border contour curve runs at least in part outside of a plane that spreads orthogonally to the optical system axis.

Abstract: A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element with an index of refraction greater than 1.6. This element has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.

Abstract: Microlithographic projection exposure apparatuses, as well as related components, subsystems and methods are disclosed.

Abstract: A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element with an index of refraction greater than 1.6. This element has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.

Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.

Abstract: A projection objective for imaging a pattern provided in an object surface onto an image surface of the projection objective has an object-side imaging subsystem for creating a final intermediate image closest to the image surface from radiation coming from the object surface and an image-side imaging subsystem for directly imaging the final intermediate image onto the image surface. The image-side imaging subsystem includes at least one aspheric primary correcting lens having an aspheric primary correcting surface. The object-side imaging subsystem includes a secondary correcting group having at least one secondary correcting lens having an aspheric secondary correcting surface. Conditions involving maximum incidence angles and subaperture offsets at the correcting surfaces are given which should be observed to obtain sufficient aberration correction at very high image-side numerical apertures NA.

Abstract: In certain aspects, the disclosure relates to a projection objective, in particular for a microlithography exposure apparatus, serving to project an image of an object field in an object plane onto an image field in an image plane. The projection objective includes a system aperture stop and refractive and/or reflective optical elements that are arranged relative to an optical system axis. The centroid of the image field is arranged at a lateral distance from the optical system axis). The system aperture stop has an inner aperture stop border which encloses an aperture stop opening and whose shape is defined by a border contour curve. The border contour curve runs at least in part outside of a plane that spreads orthogonally to the optical system axis.

Abstract: A projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective suitable for microlithography projection exposure machines has a plurality of optical elements transparent for radiation at an operating wavelength of the projection objective. At least one optical element is a high-index optical element made from a high-index material with a refractive index n?1.6 at the operating wavelength.

Abstract: An optical system, such as, for example, an illumination system or a projection lens of a microlithographic exposure system. The optical system can have an optical axis and include at least one optical element that includes an optically uniaxial material having, for an operating wavelength of the optical system, an ordinary refractive index no and an extraordinary refractive index ne. The extraordinary refractive index ne can be larger than the ordinary refractive index no. The optical element can absorb, at least for light rays of the operating wavelength entering the optical element with respect to the optical axis under an angle of incidence that lies within a certain angle region, a p-polarized component of the light rays significantly stronger than a s-polarized component of the light rays.

Abstract: Very high aperture microlithography projection objectives operating at the wavelengths of 248 nm, 193 nm and also 157 nm, suitable for optical immersion or near-field operation with aperture values that can exceed 1.4 are made feasible with crystalline lenses and crystalline end plates P of NaCl, KCl, KI, RbI, CsI, and MgO, YAG with refractive indices up to and above 2.0. These crystalline lenses and end plates are placed between the system aperture stop AS and the wafer W, preferably as the last lenses on the image side of the objective.

Abstract: In certain aspects, the disclosure relates to a projection objective, in particular for a microlithography exposure apparatus, serving to project an image of an object field in an object plane onto an image field in an image plane. The projection objective includes a system aperture stop and refractive and/or reflective optical elements that are arranged relative to an optical system axis. The centroid of the image field is arranged at a lateral distance from the optical system axis). The system aperture stop has an inner aperture stop border which encloses an aperture stop opening and whose shape is defined by a border contour curve. The border contour curve runs at least in part outside of a plane that spreads orthogonally to the optical system axis.

Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

Abstract: An objective comprising axial symmetry, at least one curved mirror and at least one lens and two intermediate images. The objective includes two refractive partial objectives and one catadioptric partial objective. The objective includes a first partial objective, a first intermediate a image, a second partial objective, a second intermediate image, and a third partial objective. At least one of the partial objectives is purely refractive. One of the partial objectives is purely refractive and one is purely catoptric.

Abstract: An aspheric reduction objective has a catadioptric partial objective (L1), an intermediate image (IMI) and a refractive partial objective (L2). The catadioptric partial objective has an assembly centered to the optical axis and this assembly includes two mutually facing concave mirrors (M1, M2). The cutouts in the mirrors (B1, B2) lead to an aperture obscuration which can be held to be very small by utilizing lenses close to the mirrors and having a high negative refractive power and aspheric lens surfaces (27, 33). The position of the entry and exit pupils can be corrected with aspherical lens surfaces (12, 48, 53) in the field lens groups. The number of spherical lenses in the refractive partial objective can be reduced with aspherical lens surfaces (66, 78) arranged symmetrically to the diaphragm plane. Neighboring aspheric lens surfaces (172, 173) form additional correction possibilities.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.