Patents by Inventor Heinz Schuster

Heinz Schuster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7289279
    Abstract: A projection objective includes a first lens group (G1) of positive refractive power, a second lens group (G2) of negative refractive power and at least one further lens group of positive refractive power in which a diaphragm is mounted. The first lens group (G1) includes exclusively lenses of positive refractive power. The number of lenses of positive refractive power (L101 to L103; L201, L202) of the first lens group (G1) is less than the number of lenses of positive refractive power (L116 to L119; L215 to L217) which are mounted forward of the diaphragm of the further lens group (G5).
    Type: Grant
    Filed: February 10, 2006
    Date of Patent: October 30, 2007
    Assignee: Carl Zeiss Semiconductor Manufacturing Technologies AG
    Inventors: Karl-Heinz Schuster, Alexander Epple
  • Patent number: 7289222
    Abstract: A method of processing a substrate having an optical surface includes using an interferometer which includes optics for providing a beam of measuring light. The optics polarize the beam of measuring light such that a tangential polarization component continuously increases relative to a radial polarization component with increasing distance from an optical axis. The substrate is positioned in the beam of measuring light. Using the system, the interferometer determines a surface map of the optical surface, and determines deviations of the optical surface from a target shape.
    Type: Grant
    Filed: October 31, 2003
    Date of Patent: October 30, 2007
    Assignee: Carl Zeiss SMT AG
    Inventor: Karl-Heinz Schuster
  • Publication number: 20070247722
    Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.
    Type: Application
    Filed: March 12, 2007
    Publication date: October 25, 2007
    Inventors: Hans-Juergen Rostalski, Karl-Heinz Schuster, Russell Hudyma, Wilhelm Ulrich, Rolf Freimann
  • Patent number: 7286284
    Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.
    Type: Grant
    Filed: August 13, 2004
    Date of Patent: October 23, 2007
    Assignee: Carl Zeiss SMS GmbH
    Inventors: Michael Totzeck, Heiko Feldmann, Toralf Gruner, Karl-Heinz Schuster, Joern Greif-Wuestenbecker, Thomas Scheruebl, Wolfgang Harnisch, Norbert Rosenkranz, Ulrich Stroessner
  • Patent number: 7277231
    Abstract: A projection objective of a microlithographic projection exposure apparatus has a correction device which can correct photoinduced imaging errors without optical elements having to be removed for this purpose. The correction device includes a first optical element and a second optical element, whose surface facing the first optical element is provided with a local surface deformation for improving the imaging properties of the projection objective. In a wall, which seals an intermediate space formed between the first optical element and the second optical element, an opening is provided through which the intermediate space can be filled with a fluid. By modifying the refractive index of the fluid adjacent to the surface, the effect of the surface deformation can be modified in a straightforward way.
    Type: Grant
    Filed: April 1, 2005
    Date of Patent: October 2, 2007
    Assignee: Carl Zeiss SMT AG
    Inventors: Karl-Heinz Schuster, Hans-Juergen Rostalski, Aurelian Dodoc
  • Publication number: 20070217013
    Abstract: The disclosure relates to an optical system of an illumination device of a microlithographic projection exposure apparatus, comprising at least one first light-conductance-increasing element having a plurality of diffractively or refractively beam-deflecting structures extending in a common first preferred direction the light-conductance-increasing element having an optically uniaxial crystal material in such a way that the optical crystal axis of the crystal material is substantially parallel or substantially perpendicular to the first preferred direction.
    Type: Application
    Filed: March 13, 2007
    Publication date: September 20, 2007
    Inventors: Karl-Heinz Schuster, Juergen Hartmaier, Manfred Maul, Dieter Schmerek, Detlev Mueller, Otto Hahnemann, Frank Marianek, Gundula Weiss, Damian Fiolka
  • Publication number: 20070195307
    Abstract: A projection lens for microlithography is provided comprising transparent optical elements not having direct contact and being spaced apart at most half of the wavelength the lens is designed for by a separator. Thus the corresponding gap is optically almost equivalent to a direct contact.
    Type: Application
    Filed: December 21, 2006
    Publication date: August 23, 2007
    Inventors: Karl-Heinz Schuster, Eric Eva
  • Publication number: 20070195411
    Abstract: The disclosure relates to an optical system, such as, for example, an illumination system or a projection lens of a microlithographic exposure system. The optical system can have an optical axis and include at least one optical element that includes an optically uniaxial material having, for an operating wavelength of the optical system, an ordinary refractive index no and an extraordinary refractive index ne. The extraordinary refractive index ne can be larger than the ordinary refractive index no. The optical element can absorb, at least for light rays of the operating wavelength entering the optical element with respect to the optical axis under an angle of incidence that lies within a certain angle region, a p-polarized component of the light rays significantly stronger than a s-polarized component of the light rays.
    Type: Application
    Filed: December 21, 2006
    Publication date: August 23, 2007
    Inventor: Karl-Heinz Schuster
  • Publication number: 20070188880
    Abstract: A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA?0.85, if appropriate of NA?1.
    Type: Application
    Filed: March 20, 2007
    Publication date: August 16, 2007
    Inventor: Karl-Heinz Schuster
  • Publication number: 20070120072
    Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
    Type: Application
    Filed: January 3, 2007
    Publication date: May 31, 2007
    Applicant: Carl Zeiss SMT AG
    Inventors: Hans-Juergen Mann, Wolfgang Singer, Joerg Schultz, Johannes Wangler, Karl-Heinz Schuster, Udo Dinger, Martin Antoni, Wilhelm Ulrich
  • Publication number: 20070091451
    Abstract: Very high aperture microlithography projection objectives operating at the wavelengths of 248 nm, 193 nm and also 157 nm, suitable for optical immersion or near-field operation with aperture values that can exceed 1.4 are made feasible with crystalline lenses and crystalline end plates P of NaCl, KCl, KI, RbI, CsI, and MgO, YAG with refractive indices up to and above 2.0. These crystalline lenses and end plates are placed between the system aperture stop AS and the wafer W, preferably as the last lenses on the image side of the objective.
    Type: Application
    Filed: December 15, 2004
    Publication date: April 26, 2007
    Inventor: Karl-Heinz Schuster
  • Patent number: 7203007
    Abstract: A projection exposure machine comprises a projection lens with a lens arrangement and at least one stop. The lens arrangement comprises a group of optical elements which is arranged between the stop and the image plane. An optical element of the group situated close to the image plane has a thickness of at least 6.5% of the entire stop diameter.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: April 10, 2007
    Assignee: Carl Zeiss SMT AG
    Inventor: Karl-Heinz Schuster
  • Patent number: 7203008
    Abstract: A very high-aperture, purely refractive projection objective having a multiplicity of optical elements has a system diaphragm (5) arranged at a spacing in front of the image plane. The optical element next to the image plane (3) of the projection objective is a planoconvex lens (34) having a substantially spherical entrance surface and a substantially flat exit surface. The planoconvex lens has a diameter that is at least 50% of the diaphragm diameter of the system diaphragm (5). It is preferred to arrange only positive lenses (32, 33, 34) between the system diaphragm (5) and image plane (3). The optical system permits imaging in the case of very high apertures of NA?0.85, if appropriate of NA?1.
    Type: Grant
    Filed: September 8, 2004
    Date of Patent: April 10, 2007
    Assignee: Carl Zeiss SMT AG
    Inventor: Karl-Heinz Schuster
  • Publication number: 20070070316
    Abstract: A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
    Type: Application
    Filed: July 18, 2006
    Publication date: March 29, 2007
    Inventors: Albrecht Ehrmann, Ulrich Wegmann, Rainer Hoch, Joerg Mallmann, Karl-Heinz Schuster, Ulrich Loering, Toralf Gruner, Bernhard Kneer, Bernhard Geuppert, Franz Sorg, Jens Kugler, Norbert Wabra
  • Patent number: 7190527
    Abstract: Refractive projection objective with a numerical aperture greater than 0.7, consisting of a first convexity, a second convexity, and a waist arranged between the two convexities. The first convexity has a maximum diameter denoted by D1, and the second convexity has a maximum diameter denoted by D2, and 0.8<D1/D2<1.1.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: March 13, 2007
    Assignee: Carl Zeiss SMT AG
    Inventors: Hans-Juergen Rostalski, Karl-Heinz Schuster, Russell Hudyma, Wilhelm Ulrich, Rolf Freimann
  • Patent number: 7186983
    Abstract: There is provided a projection objective for a projection exposure apparatus that has a primary light source for emitting electromagnetic radiation having a chief ray with a wavelength ?193 nm. The projection objective includes an object plane, a first mirror, a second mirror, a third mirror, a fourth mirror; and an image plane. The object plane, the first mirror, the second mirror, the third mirror, the fourth mirror and the image plane are arranged in a centered arrangement around a common optical axis. The first mirror, the second mirror, the third mirror, and the fourth mirror are situated between the object plane and the image plane. The chief ray, when incident on an object situated in the object plane, in a direction from the primary light source, is inclined away from the common optical axis.
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: March 6, 2007
    Assignee: Carl Zeiss SMT AG
    Inventors: Hans-Juergen Mann, Wolfgang Singer, Joerg Schultz, Johannes Wangler, Karl-Heinz Schuster, Udo Dinger, Martin Antoni, Wilhelm Ulrich
  • Publication number: 20070035848
    Abstract: Imaging systems, in particular a projection objectives of a microlithographic projection exposure apparatus, are provided. The imaging systems can have an optical axis and produce an image field which is extra-axial relative to the optical axis. The imaging systems can include a first optical element which causes a first distribution of the retardation in a plane that lies perpendicular to the optical axis, and at least one second optical element which causes a second distribution of the retardation in a plane that lies perpendicular to the optical axis. The second distribution of the retardation can at least partially compensate the first distribution of the retardation. The first and the second optical elements can be designed without rotational symmetry relative to the optical axis.
    Type: Application
    Filed: July 25, 2006
    Publication date: February 15, 2007
    Inventor: Karl-Heinz Schuster
  • Publication number: 20070019301
    Abstract: A very-high aperture, purely refractive projection objective is designed as a two-belly system with an object-side belly, an image-side belly and a waist (7) situated therebetween. The system diaphragm (5) is seated in the image-side belly at a spacing in front of the image plane. Arranged between the waist and the system diaphragm in the region of divergent radiation is a negative group (LG5) which has an effective curvature with a concave side pointing towards the image plane. The system is distinguished by a high numerical aperture, low chromatic aberrations and compact, material-saving design.
    Type: Application
    Filed: September 28, 2006
    Publication date: January 25, 2007
    Inventor: Karl-Heinz Schuster
  • Publication number: 20070014028
    Abstract: A reticle-masking (REMA) objective for imaging an object plane onto an image plane has a condenser portion, an intermediate portion, and a field lens portion. The three portions together have no more than 10 lenses with a combined total of no more than five aspheric lens surfaces. Each of the three portions of the REMA objective has one or two aspheric lens surfaces.
    Type: Application
    Filed: September 21, 2006
    Publication date: January 18, 2007
    Applicant: Carl Zeiss SMT AG
    Inventors: Johannes Wangler, Karl-Heinz Schuster, Alexander Sohmer, Alexander Epple, Jurgen Grunwald, Jorg Schultz, Christa Muller
  • Publication number: 20070007491
    Abstract: The invention concerns an optical element, in particular for an objective or an illumination system of a microlithographic projection exposure apparatus, including a substrate which for light of a predetermined working wavelength which passes through the substrate causes a first retardation between mutually perpendicular polarization states, and a layer which is epitaxially grown on the substrate and which is made from a material with non-cubic crystal structure, which by virtue of natural birefringence causes a second retardation between mutually perpendicular polarization states, which at least partially compensates for the first retardation caused in the substrate.
    Type: Application
    Filed: April 28, 2006
    Publication date: January 11, 2007
    Inventors: Ralf Mueller, Olaf Dittmann, Michael Totzeck, Daniel Kraehmer, Christoph Zaczek, Karl-Heinz Schuster