Abstract: In an embodiment, a structure includes: a nano-structure; an epitaxial source/drain region adjacent the nano-structure; a gate dielectric wrapped around the nano-structure; a gate electrode over the gate dielectric, the gate electrode having an upper portion and a lower portion, a first width of the upper portion increasing continually in a first direction extending away from a top surface of the nano-structure, a second width of the lower portion being constant along the first direction; and a gate spacer between the gate dielectric and the epitaxial source/drain region.

Abstract: A semiconductor device includes a semiconductor substrate and a first dielectric layer. The semiconductor substrate includes at least one fin. The first dielectric layer is disposed on the at least one fin. A thickness of the first dielectric layer located on a top surface of the at least one fin is greater than a thickness of the first dielectric layer located on a sidewall of the at least one fin.

Abstract: The present invention provides a polyimide comprising a structural unit, which comprises a first structural unit represented by formula (1) and a second structural unit represented by formula (2), wherein A, D and E are defined herein. A polyimide film formed by the polyimide has a low linear thermal expansion coefficient.

Abstract: A display panel including a pixel array substrate, an opposite substrate, and a display media is provided. The pixel array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of pixel units, and a gate driving circuit. The gate driving circuit including a plurality of first signal lines, a plurality of second signal lines, a plurality of dummy signal lines, and a plurality of contact structures is disposed in a peripheral region of the substrate. Each of the second signal lines is electrically connected to one corresponding first signal line. Each of the dummy signal lines is electrically connected to one corresponding second signal line via one corresponding contact structure. Each of the first signal lines is electrically connected to the corresponding second signal line via one corresponding contact structure.

Abstract: In various embodiments, a training application trains a convolutional neural network to downsample images in a video encoding pipeline. The convolution neural network includes at least two residual blocks and is associated with a downsampling factor. The training application executes the convolutional neural network on a source image to generate a downsampled image. The training application then executes an upsampling algorithm on the downsampled image to generate a reconstructed image having the same resolution as the source image. The training application computes a reconstruction error based on the reconstructed image and the source image. The training application updates at least one parameter of the convolutional neural network based on the reconstruction error to generate a trained convolutional neural network.

Abstract: This application discloses a network slice selection method and apparatus, to resolve a prior-art problem of large transmission load on a network side. The method performed by a core network device includes: receiving a first request message sent by a terminal device, where the first request message is used to request to allocate, to the terminal device, a network slice that provides a business service; sending a query message to a SSF, where the query message carries user information of the terminal device, and is used to query for a network slice that is capable of providing a business service for the terminal device; and after receiving slice information of the network slice that is capable of providing the business service required by the terminal device and that is determined based on the user information, forwarding the first request message to the network slice corresponding to the slice information.

Abstract: A device and method for data protection, and a storage controller, related to the technical field of data protection. The device comprises: an encryption unit (11), used for receiving first data to be written into a storage module and first storage address information (401), and for encrypting the first data on the basis of the first storage address information and of feature information of the storage module (402); and a decryption unit (12), used for reading from the storage module second data corresponding to second storage address information (403), and for decrypting the second data on the basis of the second storage address information and of the feature information (404).

Abstract: The present disclosure discloses methods and devices for ordering package products. The method includes: receiving an order information processing request and generating corresponding order data; if the order information comprises package ordering information, generating, for the package ordering information, purchase data sheets associated with the order data, generating purchase group data sheets associated with the purchase data sheets based on packages as granularities, and generating purchase product details data sheets associated with the purchase group data sheets based on products as granularities; storing the order data, the purchase data sheets, the purchase group data sheets, and the purchase product details data sheets to complete ordering of package products.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: The present disclosure provides systems and methods for controlling a semiconductor manufacturing apparatus. A control system includes an inspection unit capturing a set of images of the semiconductor manufacturing apparatus, a sensor interface receiving the set of images and generating at least one input signal for a database server, and a control unit. The control unit includes a front end subsystem, a calculation subsystem, and a message and feedback subsystem. The calculation subsystem receives the data signal from the front end subsystem, wherein the calculation subsystem performs an artificial intelligence analytical process to determine, according to the data signal, whether a malfunction has occurred in the semiconductor manufacturing apparatus and to generate an output signal. The message and feedback subsystem generates an alert signal and a feedback signal according to the output signal, and the alert signal is transmitted to a user of the semiconductor manufacturing apparatus.

Abstract: Provided are a deposition method, a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate and a dielectric structure. The substrate includes at least one fin thereon. The dielectric structure covers the at least one fin. A thickness of the dielectric structure located on a top surface of the at least one fin is greater than a thickness of the dielectric structure located on a sidewall of the at least one fin. The dielectric structure includes a first dielectric layer and a second dielectric layer. The first dielectric layer is conformally disposed on the at least one fin. The second dielectric layer is disposed on the first dielectric layer over the top surface of the at least one fin. A thickness of the second dielectric layer is greater than a thickness of the first dielectric layer.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: Provided are sampling pumps and gas analyzers using the sampling pumps. The sampling pump may include at least one reciprocating pump set and a control system. Each reciprocating pump set can include two reciprocating pumps. The control system can output drive signals for controlling reciprocating drawing and compressing operations of the reciprocating pumps, where the control system may be designed to output the drive signals that cause the two reciprocating pumps within the same set to provide opposing impact directions at the same time.

Abstract: In various embodiments, a quality inference application estimates the perceived quality of reconstructed videos. The quality inference application computes a first feature value for a first feature included in a feature vector based on a color component associated with a reconstructed video. The quality inference application also computes a second feature value for a second feature included in the feature vector based on a brightness component associated with the reconstructed video. Subsequently, the quality inference application computes a perceptual quality score based on the first feature value and the second feature value. The perceptual quality score indicates a level of visual quality associated with at least one frame included in the reconstructed video.

Abstract: In various embodiments, a training application generates a perceptual video model. The training application computes a first feature value for a first feature included in a feature vector based on a first color component associated with a first reconstructed training video. The training application also computes a second feature value for a second feature included in the feature vector based on a first brightness component associated with the first reconstructed training video. Subsequently, the training application performs one or more machine learning operations based on the first feature value, the second feature value, and a first subjective quality score for the first reconstructed training video to generate a trained perceptual quality model. The trained perceptual quality model maps a feature value vector for the feature vector to a perceptual quality score.

Abstract: A display panel includes a substrate, a plurality of standard pixel units, and a plurality of dummy pixel units. A plurality of first conductor patterns and a plurality of shield blocks of a shield pattern layer are arranged in an array above the substrate. Each of the standard pixel units includes one of the first conductor patterns and a first shield block of the shield blocks. The first shield blocks and the first conductor patterns are overlapped, respectively. Each of the dummy pixel units includes a second shield block of the shield blocks. The second shield blocks and the first conductor patterns are not overlapped. A first edge of the substrate is spaced apart from a second edge of one of the standard pixel units adjacent to the dummy pixel units by a first distance. The first distance is within a range from 50 ?m to 3000 ?m.

Abstract: A semiconductor device includes a substrate, a plurality of insulators, a liner structure and a gate stack. The substrate has fins and trenches in between the fins. The insulators are disposed within the trenches of the substrate. The liner structure is disposed on the plurality of insulators and across the fins, wherein the liner structure comprises sidewall portions and a cap portion, the sidewall portions is covering sidewalls of the fins, the cap portion is covering a top surface of the fins and joined with the sidewall portions, and a maximum thickness T1 of the cap portion is greater than a thickness T2 of the sidewall portions. The gate stack is disposed on the liner structure and across the fins.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A display panel includes a substrate, a plurality of standard pixel units, and a plurality of dummy pixel units. A plurality of first conductor patterns and a plurality of shield blocks of a shield pattern layer are arranged in an array above the substrate. Each of the standard pixel units includes one of the first conductor patterns and a first shield block of the shield blocks. The first shield blocks and the first conductor patterns are overlapped, respectively. Each of the dummy pixel units includes a second shield block of the shield blocks. The second shield blocks and the first conductor patterns are not overlapped. A first edge of the substrate is spaced apart from a second edge of one of the standard pixel units adjacent to the dummy pixel units by a first distance. The first distance is within a range from 50 ?m to 3000 ?m.