Abstract: An information handling system may include a first member, a second member, and one or more hinge assemblies for coupling the first and second members, where the one or more hinge assemblies comprise a central assembly, a first and a second orbit mechanism configured to couple to the first and second members respectively, a first primary shaft coupling a first pair of link bars to the central assembly and to each other, a first secondary shaft coupling the first pair of link bars to each other and to the first orbit mechanism via a first track comprising an elongated opening, a second primary shaft coupling a second pair of link bars to the central assembly and to each other, and a second secondary shaft coupling the second pair of link bars to each other and to the second orbit mechanism via a second track comprising an elongated opening.

Abstract: Described herein are compounds of Formula I or a pharmaceutically acceptable salt thereof. The compounds of Formula I act as RIPK1 inhibitors and can be useful in preventing, treating or acting as a remedial agent for RIPK1-related diseases.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A semiconductor device includes a semiconductor substrate and a first dielectric layer. The semiconductor substrate includes at least one fin. The first dielectric layer is disposed on the at least one fin. A thickness of the first dielectric layer located on a top surface of the at least one fin is greater than a thickness of the first dielectric layer located on a sidewall of the at least one fin.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: A device includes a semiconductor nanostructure, and an oxide layer, which includes horizontal portions on a top surface and a bottom surface of the semiconductor nanostructure, vertical portions on sidewalls of the semiconductor nanostructure, and corner portions on corners of the semiconductor nanostructure. The horizontal portions have a first thickness. The vertical portions have a second thickness. The corner portions have a third thickness. Both of the second thickness and the third thickness are greater than the first thickness. A high-k dielectric layer surrounds the oxide layer. A gate electrode surrounds the high-k dielectric layer.

Abstract: An epitaxial semiconductor structure including a substrate, a semiconductor layer, and a balance structure is provided. The substrate has a first surface and a second surface opposite to each other. The semiconductor layer is formed on the first surface. The balance structure is formed on the second surface, the balance structure is configured to balance the thermal stress on the substrate, and the balance structure is composed of a plurality of non-continuous particulate materials. An epitaxial substrate is also provided.

Abstract: A heating apparatus including a rotating stage, a plurality of wafer carriers, a plurality of first heaters, and at least one second heater is provided. The plurality of wafer carriers is disposed on the rotating stage. The rotating stage drives the wafer carriers to rotate around a rotating axis of the rotating stage. The plurality of first heaters is disposed under a first heating region, each have a first width Wa. There is a first spacing Sa between any two adjacent first heaters. The at least one second heater is disposed under a second heating region, and has a second width Wb. There is a smallest spacing Sab between the at least one second heater and the first heating region, and Wa, Wb, Sa and Sab satisfy the equation: Wa/(Wa+Sa) ? Wb/(Wb+Sab). Each wafer carrier overlaps the first heating region in the axial direction of the rotating axis.

Abstract: A docking device and method with video capturing function are provided. The docking device includes a first interface, an output interface, a second interface, a first video processor and a video capturing device. The docking device receives a first input video signal or a second input video signal from the first interface or the second interface. The first video processor generates a first output video signal with an output format in response to the first input video signal or the second input video signal. The video capturing device generates a second output data signal with a format of the Universal Serial Bus in response to the first input video signal or the second input video signal.

Abstract: A micro light-emitting diode includes a first stacked layer, a second stacked layer, a third stacked layer, a bonding layer, at least one etch stop layer, and a plurality of electrodes. The second stacked layer is disposed between the first stacked layer and the third stacked layer. The first stacked layer includes a first active layer. The second stacked layer includes a second active layer. The third stacked layer includes a third active layer. The bonding layer is disposed between the second stacked layer and the third stacked layer. The at least one etch stop layer is at least disposed between the first active layer and the second active layer. The plurality of electrodes are respectively electrically connected with the first stacked layer, the second stacked layer, and the third stacked layer. At least one electrode of the plurality of electrodes contacts the etch stop layer.

Abstract: A method of generating randomness by public participation may comprise: communicating with the commodity devices to execute a protocol comprising a setup phase, a contribution phase and a result-generation phase, wherein: in the setup phase, parameters are initialized, a verifiable delay function is setup, and the parameters are published; the contribution phase is divided into at least one first stage, published parameters are provided, random values are received, and a Merkle tree root and Merkle tree audit paths are published in each of the first stage; and the result-generation phase is divided into at least one second stage of the same number as that of the first stage, each second stage is dedicated to one of the first stage ahead of the second stage for a period, and in each second stage, computation is performed to generate a result of randomness which is published.

Abstract: A controller assembly functioning as a joystick includes a driving unit, a sliding member, a potentiometer, and a controlling module. The driving unit includes a driving mechanism, a worm, and a worm wheel, the worm wheel connected to the sliding member. Through the worm, the driving mechanism rotates the worm wheel, causing the sliding member to move up and down only. The potentiometer detects rotation of the worm wheel, the controlling module obtains movement accordingly of the sliding member. The controlling module obtains a user's operating force applied to the driving mechanism, and compares the positional information and the operating force information with preset values to obtain comparison results. The sliding member is driven to move according to the two comparison results. An electronic device with the controller assembly is also disclosed.

Abstract: A semiconductor device includes a first substrate having opposite first and second sides, a first conductive layer on the first side of the first substrate, and a second substrate having opposite first and second sides. The second side of the second substrate is bonded to the first side of the first substrate. The second substrate includes a semiconductor material, and at least one circuit element electrically coupled to the first conductive layer. The at least one circuit element includes at least one of a Schottky diode configured by the semiconductor material and a first contact structure, a capacitor having a first electrode of the semiconductor material, or a resistor of the semiconductor material.

Abstract: Examples of out-of-band switching of states of a computing device by a coupled peripheral device, are described. In an example, a sensor within the peripheral device may monitor an area in proximity to the peripheral device. A controller within the peripheral device may determine whether a user is present within the area. On determining the user to be present, a control signal may e generated. In an example, the control signal is conforms with the messaging protocol and is to is to cause the computing device to switch between an operational state and a low-power state. The controller may cause out-of-band transmission of the control signal to the computing device through the transmission interface.

Abstract: An end cap assembly, a battery cell, a battery, an electrical device, and a method and device for manufacturing a battery cell are provided. The end cap assembly includes an end cap and a pressure relief mechanism. The pressure relief mechanism is connected to the end cap. The pressure relief mechanism is configured to: keep in a first pressure relief state when an internal pressure or temperature of the battery cell is greater than or equal to a first threshold and less than a second threshold, so as to release the internal pressure of the battery cell; and keep in a second pressure relief state when the internal pressure or temperature of the battery cell is greater than or equal to the second threshold, so as to release the internal pressure of the battery cell.

Abstract: An image processing method includes analyzing multiple images data based on Illumination-invariant Feature Network (IF-NET) with an image processing device to generate corresponding sets of eigenvector, in which image data includes a first image data related to at least one first feature of the sets of eigenvector, and a second image data related to at least one second feature of the sets of eigenvector; choosing a corresponding first training set of tiles and second training set of tiles from the first image data and second image data with an image processing device based on IF-NET, and computing on both training set of tiles to generate a least one loss value; and adjusting IF-NET based on a least one loss value. An image processing system is also disclosed herein.

Abstract: A method includes forming a fin protruding over a substrate; forming a conformal oxide layer over an upper surface and along sidewalls of the fin; performing an anisotropic oxide deposition or an anisotropic plasma treatment to form a non-conformal oxide layer over the upper surface and along the sidewalls of the fin; and forming a gate electrode over the fin, the conformal oxide layer and the non-conformal oxide layer being between the fin and the gate electrode.

Abstract: Disclosed herein are electrospun fibrous matrix and its production method. The method mainly includes the steps of, mixing a first polymer and a drug to form a first mixture, and sonicating the first mixture until a plurality of microparticles are formed with the drug encapsulated therein; and mixing the plurality of microparticles with a second polymer to form a second mixture, subjecting the second mixture to a wet electrospinning process to form the electrospun fibrous matrix. The thus-produced electrospun fibrous matrix is characterized by having a plurality of first and second fibrils woven together, in which each second fibril has a plurality of drug-encapsulated microparticles independently integrated and disposed along the longitudinal direction of the second fibril. Also encompassed in the present disclosure is a method for treating a wound of a subject. The method includes applying the present electrospun fibrous matrix to the wound of the subject to accelerate wound healing.