Abstract: A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of the semiconductor fin using the mask. A second layer is formed on the semiconductor fin, the second layer covering the mask and the first layer. A dummy gate layer is formed on the semiconductor fin and patterned to expose a top surface of the semiconductor fin.

Abstract: An optical fingerprint identification structure is provided, including: a protective glass and an optical fingerprint identification module, wherein the optical fingerprint identification module is located under the protective glass. The protective glass of the present invention is of a thickness. The gap between the protective glass and the optical fingerprint identification module is an air gap. The optical fingerprint identification module further comprises: a receiving lens assembly, an image sensor module, a module housing, and a module housing extension, the receiving lens assembly is located at the top of the optical fingerprint identification module, that is, close to the air gap, and the image sensor module is located below the receiving lens assembly. As such, the size of the optical fingerprint identification structure is reduced, and is applicable to the side of device, so that the usable area on the front and back of the device is increased.

Abstract: A display panel includes a substrate, a plurality of standard pixel units, and a plurality of dummy pixel units. A plurality of first conductor patterns and a plurality of shield blocks of a shield pattern layer are arranged in an array above the substrate. Each of the standard pixel units includes one of the first conductor patterns and a first shield block of the shield blocks. The first shield blocks and the first conductor patterns are overlapped, respectively. Each of the dummy pixel units includes a second shield block of the shield blocks. The second shield blocks and the first conductor patterns are not overlapped. A first edge of the substrate is spaced apart from a second edge of one of the standard pixel units adjacent to the dummy pixel units by a first distance. The first distance is within a range from 50 ?m to 3000 ?m.

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

Abstract: A semiconductor wafer carrier structure is provided. The semiconductor wafer carrier structure includes a susceptor and a patterned heat conduction part disposed on the susceptor. At least a portion of the patterned heat conduction part has a different heat conduction coefficient than the susceptor. A metal-organic chemical vapor deposition equipment is also provided. The metal-organic chemical vapor deposition equipment includes a carrier body having a plurality of carrier units. The above semiconductor wafer carrier structure is placed in at least one of the carrier units.

Abstract: A semiconductor wafer carrier structure includes a carrier body having a surface; a protective film covering the surface; a susceptor disposed on the carrier body; and a patterned coating film on the susceptor, wherein the patterned coating film has two or more different thicknesses, wherein patterns of the patterned coating film are symmetrically distributed with respect to a center of the susceptor.

Abstract: In an embodiment, a structure includes: a nano-structure; an epitaxial source/drain region adjacent the nano-structure; a gate dielectric wrapped around the nano-structure; a gate electrode over the gate dielectric, the gate electrode having an upper portion and a lower portion, a first width of the upper portion increasing continually in a first direction extending away from a top surface of the nano-structure, a second width of the lower portion being constant along the first direction; and a gate spacer between the gate dielectric and the epitaxial source/drain region.

Abstract: The invention provides a touch device and a communication method thereof. The touch device includes a display panel and a controller. The controller controls the display panel to perform a display driving operation and a touch sensing operation. The controller may transmit a first wireless signal to another slave communication device via the display panel in a touch sensing period. The controller may receive a second wireless signal sent by another master communication device via the display panel in the touch sensing period. When the touch device serves as one of a master communication device and a slave communication device, a time length of the touch sensing period is a first time length. When the touch device serves as the other of the master communication device and the slave communication device, the time length of the touch sensing period is a second time length greater than the first time length.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration in a range of 5% to 30%; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer to a range of 1% to 5%; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.

Abstract: An electronic device is provided. The electronic device includes a housing, a first circuit board, and a first heat sink. The housing forms a receiving space. The first circuit board and the first heat sink are received in the receiving space along the gravity direction. One side of the first circuit board has at least one electronic element. The first heat sink has a first base board and at least first side board. The first base board is arranged adjacent to the first circuit board. The electronic element transferred heat to the first base board. The first side board connects to the first base board, and cooperatively forms a first heat dissipating channel along the gravity direction. The first side board is close to or contacts the housing, so that the heat of the electronic element can be transferred by heat conduction and heat convection to dissipate outside.

Abstract: A method includes forming a protruding structure, and forming a non-conformal film on the protruding structure using an Atomic Layer Deposition (ALD) process. The non-conformal film includes a top portion directly over the protruding structure, and a sidewall portion on a sidewall of the protruding structure. The top portion has a first thickness, and the sidewall portion has a second thickness smaller than the first thickness.

Abstract: In an embodiment, a structure includes: a nano-structure; an epitaxial source/drain region adjacent the nano-structure; a gate dielectric wrapped around the nano-structure; a gate electrode over the gate dielectric, the gate electrode having an upper portion and a lower portion, a first width of the upper portion increasing continually in a first direction extending away from a top surface of the nano-structure, a second width of the lower portion being constant along the first direction; and a gate spacer between the gate dielectric and the epitaxial source/drain region.

Abstract: The present invention is directed to substituted certain 1-pyrazolyl, 5-, 6-disubstituted indazole derivatives of Formula (I) and pharmaceutically acceptable salts thereof, wherein R1, R2, and ring A are as defined herein, which are potent inhibitors of LRRK2 kinase and may be useful in the treatment or prevention of diseases in which the LRRK2 kinase is involved, such as Parkinson's Disease and other diseases and disorders described herein. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of diseases, such as Parkinson's disease, in which LRRK-2 kinase is involved.

Abstract: The present invention provides a hydrophobic thermoplastic starch and method for manufacturing the same, to be used as granules for making biodegradable composites. The hydrophobic thermoplastic Starch of the invention is in a granule type, has the melt flow index in the range of 0.2-6 g/10 min at 160° C. and has 60-80 wt % of starch and the water content less than 9%.

Abstract: Provided are a polymer having ultraviolet absorption functionality and preparation method thereof; specifically, three monomers having different ultraviolet absorption bands are used for copolymerization, achieving a significant expansion of the ultraviolet absorption range and achieving the effect of full-band ultraviolet shielding. The obtained polymer film has strong visible light transmittance, fluorescence, easy processing, excellent stability, and remarkable ultraviolet shielding performance, and can be broadly applied in such areas as aviation, construction, agriculture, and optical devices.

Abstract: Apparatuses for detecting distance and methods thereof are provided. First, a first distance measurement mode and a second distance measurement mode can be executed by using an apparatus having a distance measurement capability, and the apparatus has an anti-vibration module. When the first distance measurement mode is executed, the anti-vibration module is electrically connected to perform distance measurement, and a first distance measurement result is obtained, wherein the maximum movement compensation amount of the anti-vibration module is a first value. When the second distance measurement mode is executed, the anti-vibration module is electrically connected to perform distance measurement, and a second distance measurement result is obtained, wherein the maximum movement compensation amount of the anti-vibration module is a second value, and the first value is greater than the second value.

Abstract: A method for touch sensing enhancement implemented in a single chip, a single chip capable of achieving touch sensing enhancement, and a computing apparatus are introduced. The single chip is used to be coupled to a display panel with a touch sensor and a fingerprint sensor. The computing apparatus may include the display panel, the single chip, and a processing unit, wherein the single chip is coupled between the display panel and processing unit. The method includes obtaining touch sensing data by a touch sensing module disposed within the single chip and coupled to the touch sensor; obtaining fingerprint sensing data by a fingerprint sensing module disposed within the single chip and coupled to the fingerprint sensor; and generating output touch data based on the touch sensing data and the fingerprint sensing data. With the contribution of the fingerprint sensing data, touch sensing enhancement can be achieved.

Abstract: In an embodiment, a method includes: forming a first fin and a second fin extending from a semiconductor substrate; depositing a liner layer along a first sidewall of the first fin, a second sidewall of the second fin, and a top surface of the semiconductor substrate, the liner layer formed of silicon oxynitride having a nitrogen concentration in a range of 5% to 30%; depositing a fill material on the liner layer, the fill material formed of silicon; annealing the liner layer and the fill material, the annealing converting the fill material to silicon oxide, the annealing decreasing the nitrogen concentration of the liner layer to a range of 1% to 5%; and recessing the liner layer and the fill material to form an isolation region between the first fin and the second fin.

Abstract: An analog circuit is calibrated to perform neural network computing. Calibration input is provided to a pre-trained neural network that includes at least a given layer having pre-trained weights stored in the analog circuit. The analog circuit performs tensor operations of the given layer using the pre-trained weights. Statistics of calibration output from the analog circuit is calculated. Normalization operations to be performed during neural network inference are determined. The normalization operations incorporate the statistics of the calibration output and are performed at a normalization layer that follows the given layer. A configuration of the normalization operations is written into memory while the pre-trained weights stay unchanged.