Patents by Inventor Hideo Hosono

Hideo Hosono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11946151
    Abstract: An electrolytic cell capable of simply electrolyzing carbon dioxide into carbon monoxide and oxygen with low activation energy, and an electrolytic device. The carbon dioxide electrolytic cell includes a cathode, an anode, and a solid electrolyte having oxide ion conductivity. The cathode is the following (A) or (B); (A) a metal and a first mayenite-type compound are included therein or (B) a metal and a second mayenite-type compound are included therein, said second mayenite type compound including a mayenite type compound having electron conductivity.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: April 2, 2024
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Toshiharu Yokoyama, Yoshitake Toda, Shintaro Ishiyama, Masami Taguchi, Hiroki Takahashi
  • Patent number: 11871590
    Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: January 9, 2024
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Yoshitake Toda, Satoru Watanabe, Toshinari Watanabe, Kazuhiro Ito, Naomichi Miyakawa, Nobuhiro Nakamura
  • Publication number: 20230387137
    Abstract: In an embodiment, a thin film transistor is formed on a substrate, the thin film transistor includes a channel formed by at least part of a metal oxide semiconductor layer containing at least indium (In), a gate electrode, a gate insulating layer arranged between the channel and the gate electrode, a source electrode connected to the metal oxide semiconductor layer, and a drain electrode connected to the metal oxide semiconductor layer. For example, the average concentration of carbon atoms in an area from a surface to the depth of 5 nm of the channel is 1.5×1021 cm?3 or less, whereby a threshold shift due to a voltage stress can be effectively reduced.
    Type: Application
    Filed: August 14, 2023
    Publication date: November 30, 2023
    Inventors: Hideo HOSONO, Junghwan Kim, Hideya Kumomi
  • Patent number: 11819827
    Abstract: Provided are a supported metal material showing high catalytic activity, a supported metal catalyst, a method of producing ammonia and a method of producing hydrogen using the supported metal catalyst, and a method of producing a cyanamide compound. The supported metal material of the present invention is a supported metal material in which a transition metal is supported on a support, and the support is a cyanamide compound represented by the following general formula (1): MCN2 (1), wherein M represents a group II element of the periodic table, and the specific surface area of the cyanamide compound is 1 m2 g?1 or more.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: November 21, 2023
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Kazuhisa Kishida, Masaaki Kitano, Toshiharu Yokoyama
  • Publication number: 20230241593
    Abstract: The present invention is related to an oxynitride-hydride which is capable of achieving both stabilization and improvement of catalyst performance when used as a support, and the oxynitride-hydride can be easily synthesized. The oxynitride-hydride is represented by the following general formula (1), AnBmOl-xNyHz??(1) wherein in the general formula (1), x represents a number represented by 0.1?x?3.5; y represents a number represented by 0.1?y?2.0; and z represents a number represented by 0.1?z?2.0.
    Type: Application
    Filed: February 16, 2021
    Publication date: August 3, 2023
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Masaaki KITANO, Hideo HOSONO, Toshiharu YOKOYAMA, Jun KUJIRAI, Kiya OGASAWARA
  • Publication number: 20230083938
    Abstract: The invention is related to a layered double hydroxide electride which can be produced without high-temperature treatment, and a production method of which cost can be reduced. The layered double hydroxide electride contains electrons between layers and has an electron density of 2.0×1018 cm?3 or more. The method of producing the layered double hydroxide electride includes a step of mixing a starting layered double hydroxide with an electron exchanger for exchanging anions existing between layers of the starting layered double hydroxide for electrons to produce the layered double hydroxide electride.
    Type: Application
    Filed: February 15, 2021
    Publication date: March 16, 2023
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Masaaki KITANO, Hideo HOSONO, Toshiharu YOKOYAMA, Kiya OGASAWARA, Yo AGAWA
  • Patent number: 11495767
    Abstract: A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.
    Type: Grant
    Filed: December 22, 2020
    Date of Patent: November 8, 2022
    Assignee: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Junghwan Kim, Hideya Kumomi
  • Patent number: 11433378
    Abstract: Provided are an intermetallic compound having high stability and high activity, and a catalyst using the same. A hydrogen storage/release material containing an intermetallic compound represented by formula (1): RTX . . . (1) wherein R represents a lanthanoid element, T represents a transition metal in period 4 or period 5 in the periodic table, and X represents Si, Al or Ge.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: September 6, 2022
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Yutong Gong, Jiazhen Wu, Masaaki Kitano, Toshiharu Yokoyama, Yangfan Lu, Tiannan Ye
  • Publication number: 20220241754
    Abstract: The invention provides a method of producing a metal oxyhydride, capable of synthesizing the metal oxyhydride under reaction conditions close to atmospheric pressure, and excellent in productivity and cost. The method of producing a metal oxyhydride of the present invention includes reacting an oxide with a metal hydride in a hydrogen atmosphere. A non-oxygen element constituting the oxide comprises only one kind of non-oxygen element. A pressure condition of the reaction is 0.1 to 0.9 MPa, and a temperature of the reaction is 500 to 1000° C.
    Type: Application
    Filed: July 1, 2020
    Publication date: August 4, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Masaaki KITANO, Hideo HOSONO, Toshiharu YOKOYAMA, Kayato OOYA, Kiya OGASAWARA, Ryu TAKASHIMA
  • Patent number: 11377593
    Abstract: In a phosphor according to an aspect, an emission site has a perovskite crystal structure expressed by ABX3, in which A and B are each a cation and X is an anion, and an emission element is located at a B site serving as a body center of the perovskite crystal structure.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: July 5, 2022
    Assignees: KOITO MANUFACTURING CO., LTD., TOKYO INSTITUTE OF TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Hisayoshi Daicho, Yu Shinomiya, Kiminori Enomoto, Hideo Hosono, Satoru Matsuishi, Hiroshi Sawa, Akitoshi Nakano
  • Publication number: 20220143580
    Abstract: A molded sintered body containing a mayenite type compound, an inorganic binder sintered material, and a transition metal, wherein a content of the inorganic binder sintered material is 3 to 30 parts by mass with respect to 100 parts by mass of the molded sintered body, and the molded sintered body has at least one pore peak in each of a pore diameter range of 2.5 to 20 nm and a pore diameter range of 20 to 350 nm. A method for producing the molded sintered body, including mixing a precursor of a mayenite type compound and a raw material of an inorganic binder sintered material to prepare a mixture; molding the mixture to prepare a molded body of the mixture; firing the molded body to prepare a fired product; and supporting a transition metal on the fired product to produce a molded sintered body.
    Type: Application
    Filed: February 26, 2020
    Publication date: May 12, 2022
    Applicants: Tsubame BHB Co., Ltd., Tokyo Institute of Technology
    Inventors: Yasunori INOUE, Munenobu ITO, Kazuhisa KISHIDA, Hideo HOSONO, Masaaki KITANO, Toshiharu YOKOYAMA
  • Publication number: 20220126276
    Abstract: The invention provides a catalyst for ammonia synthesis which has a high ammonia synthesis activity even at a low reaction temperature and a low reaction pressure and shows no decrease in the catalytic activity even when the synthesis reaction is repeated. The catalyst for ammonia synthesis comprises a metal supported material containing a transition metal and a support for supporting the transition metal. The support contains a metal hydride represented by XHn and an F ion. In the formula, X represents at least one kind selected from the group consisting of atoms of Group 2 and Group 3 of the periodic table, and lanthanoid atoms; and n represents a number represented by 2?n?3.
    Type: Application
    Filed: October 21, 2021
    Publication date: April 28, 2022
    Inventors: Michikazu HARA, Hideo HOSONO, Masashi HATTORI
  • Patent number: 11267720
    Abstract: Provided is a manufacturing method with which it is possible to convert a mayenite-type compound to an electride, wherein a reducing agent is not required, reaction conditions include a temperature that is lower than that in the related art, and the reaction is performed more quickly in a simple manner, and, additionally, by requiring a lower amount of energy. Provided is a method for manufacturing an electride of mayenite-type compounds, the method being characterized in that a mayenite-type compound is converted to an electride by making a current directly flow through the mayenite-type compound by applying a voltage to the mayenite-type compound in a heating state.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: March 8, 2022
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Toshiharu Yokoyama, Yoshitake Toda, Shintaro Ishiyama
  • Publication number: 20220048782
    Abstract: The invention provides a perovskite-type oxynitride hydride which can be easily synthesized by achieving both improvement in catalytic performance and stabilization when used as a support of a catalyst. The oxynitride hydride is represented by general formula (1a) or (1b). ABO3-xNyHz??(1a) AB2O4-xNyHz??(1b) (In the above general formulas (1 a) and (1 b), A is at least one selected from the group consisting of Ba and Sr; B is at least one selected from the group consisting of Ce, La and Y; x represents a number represented by 0.2?x?2.0; y represents a number represented by 0.1?y?1.0; and z represents a number represented by 0.1?z?1.0.
    Type: Application
    Filed: February 26, 2020
    Publication date: February 17, 2022
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Masaaki KITANO, Hideo HOSONO, Toshiharu YOKOYAMA, Jun KUJIRAI
  • Patent number: 11235310
    Abstract: Provided is a method for manufacturing a catalyst with which it is possible to obtain a supported metal ammonia synthesis catalyst, in which there are restrictions in terms of producing method and producing facility, and particularly large restrictions for industrial-scale producing, in a more simple manner and so that the obtained catalyst has a high activity. This method for manufacturing an ammonia synthesis catalyst includes: a first step for preparing 12CaO.7Al2O3 having a specific surface area of 5 m2/g or above; a second step for supporting a ruthenium compound on the 12CaO.7Al2O3; and a third step for performing a reduction process on the 12CaO.7Al2O3 supporting the ruthenium compound, obtained in the second step. This invention is characterized in that the reduction process is performed until the average particle diameter of the ruthenium after the reduction process has increased by at least 15% in relation to the average particle diameter of the ruthenium before the reduction process.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: February 1, 2022
    Assignees: Tokyo Institute of Technology, Tsubame BHB Co., Ltd.
    Inventors: Hideo Hosono, Masaaki Kitano, Toshiharu Yokoyama, Jiang Li, Shigeki Kawamura, Kazuhisa Kishida
  • Publication number: 20210343961
    Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
    Type: Application
    Filed: January 19, 2021
    Publication date: November 4, 2021
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo HOSONO, Yoshitake TODA, Satoru WATANABE, Toshinari WATANABE, Kazuhiro ITO, Naomichi MIYAKAWA, Nobuhiro NAKAMURA
  • Publication number: 20210284544
    Abstract: Provided is a manufacturing method with which it is possible to convert a mayenite-type compound to an electride, wherein a reducing agent is not required, reaction conditions include a temperature that is lower than that in the related art, and the reaction is performed more quickly in a simple manner, and, additionally, by requiring a lower amount of energy. Provided is a method for manufacturing an electride of mayenite-type compounds, the method being characterized in that a mayenite-type compound is converted to an electride by making a current directly flow through the mayenite-type compound by applying a voltage to the mayenite-type compound in a heating state.
    Type: Application
    Filed: July 25, 2017
    Publication date: September 16, 2021
    Inventors: Hideo HOSONO, Toshiharu YOKOYAMA, Yoshitake TODA, Shintaro ISHIYAMA
  • Patent number: 11094909
    Abstract: A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: August 17, 2021
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Yoshitake Toda, Toshinari Watanabe, Naomichi Miyakawa, Kazuhiro Ito, Satoru Watanabe, Akira Mitsui, Kazuto Ohkoshi
  • Patent number: 11075303
    Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: July 27, 2021
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, AGC Inc.
    Inventors: Hideo Hosono, Toshio Kamiya, Hideya Kumomi, Junghwan Kim, Nobuhiro Nakamura, Satoru Watanabe, Naomichi Miyakawa
  • Publication number: 20210151710
    Abstract: A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.
    Type: Application
    Filed: December 22, 2020
    Publication date: May 20, 2021
    Inventors: Hideo HOSONO, Junghwan KIM, Hideya KUMOMI