Patents by Inventor Hideo Hosono

Hideo Hosono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190315628
    Abstract: A two-dimensional hydrogen boride-containing sheet of the present invention has a two-dimensional network that consists of (HB)n (n?4).
    Type: Application
    Filed: October 18, 2017
    Publication date: October 17, 2019
    Applicants: University of Tsukuba, Tokyo Institute of Technology
    Inventors: Takahiro Kondo, Junji Nakamura, Hiroaki Nishino, Asahi Fujino, Tomohiro Fujimori, Hideo Hosono, Masahiro Miyauchi
  • Patent number: 10446783
    Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 k? to 100 M?.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: October 15, 2019
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY, Asahi Glass Company, Limited
    Inventors: Hideo Hosono, Yoshitake Toda, Nobuhiro Nakamura, Naomichi Miyakawa, Satoru Watanabe, Toshinari Watanabe
  • Publication number: 20190248670
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Application
    Filed: April 17, 2019
    Publication date: August 15, 2019
    Inventors: Fumiyasu OBA, Hideo HOSONO, Hidenori HIRAMATSU, Hideya KUMOMI, Yu KUMAGAI, Soshi IIMURA, Yoshinori MURABA, Lee Alan BURTON, Isao TANAKA, Yoyo HINUMA
  • Patent number: 10370590
    Abstract: A phosphor is represented by the general formula aMIX·MII1-xMIMVO4:(Re)x where MI is at least one atomic element selected from the group consisting of K, Li, Na, Rb, Cs, Fr, Cu, and Ag, with K being essential; MII is at least one atomic element selected from the group consisting of Mg, Ca, Sr, Ba, Ra, Mn, Zn, Cd, and Sn; MV is at least one atomic element selected from the group consisting of P, V, Nb, Ta, As, Sb, and Bi; X is at least one halogen element, with F being essential; Re is at least one atomic element selected from the group consisting of rare earth elements, with Eu being essential; and a is in the range 0.6?a?1.4.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: August 6, 2019
    Assignees: KOITO MANUFACTURING CO., LTD., TOKYO INSTITUTE OF TECHNOLOGY, NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Hisayoshi Daicho, Yu Shinomiya, Kiminori Enomoto, Hideo Hosono, Satoru Matsuishi, Hiroshi Sawa, Akitoshi Nakano
  • Publication number: 20190210008
    Abstract: Provided is a method for manufacturing a catalyst with which it is possible to obtain a supported metal ammonia synthesis catalyst, in which there are restrictions in terms of producing method and producing facility, and particularly large restrictions for industrial-scale producing, in a more simple manner and so that the obtained catalyst has a high activity. This method for manufacturing an ammonia synthesis catalyst includes: a first step for preparing 12CaO.7Al2O3 having a specific surface area of 5 m2/g or above; a second step for supporting a ruthenium compound on the 12CaO.7Al2O3; and a third step for performing a reduction process on the 12CaO.7Al2O3 supporting the ruthenium compound, obtained in the second step. This invention is characterized in that the reduction process is performed until the average particle diameter of the ruthenium after the reduction process has increased by at least 15% in relation to the average particle diameter of the ruthenium before the reduction process.
    Type: Application
    Filed: August 8, 2017
    Publication date: July 11, 2019
    Applicants: Tokyo Institute of Technology, Tsubame BHB Co., Ltd.
    Inventors: Hideo Hosono, Masaaki Kitano, Toshiharu Yokoyama, Jiang Li, Shigeki Kawamura, Kazuhisa Kishida
  • Patent number: 10322940
    Abstract: An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1). M(NH2)x??(1) (In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.).
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: June 18, 2019
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Masaaki Kitano, Toshiharu Yokoyama, Yasunori Inoue
  • Publication number: 20190172605
    Abstract: Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×1018 cm?3 and less than or equal to 2.3×1021 cm?3, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material includig calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7.
    Type: Application
    Filed: February 7, 2019
    Publication date: June 6, 2019
    Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo HOSONO, Yoshitake TODA, Katsuro HAYASHI, Setsuro ITO, Satoru WATANABE, Naomichi MIYAKAWA, Toshinari WATANABE, Kazuhiro ITO
  • Patent number: 10308521
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: June 4, 2019
    Assignee: PANASONIC CORPORATION
    Inventors: Fumiyasu Oba, Hideo Hosono, Hidenori Hiramatsu, Hideya Kumomi, Yu Kumagai, Soshi Iimura, Yoshinori Muraba, Lee Alan Burton, Isao Tanaka, Yoyo Hinuma
  • Patent number: 10249402
    Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm?3 to 2.3×1021 cm?3.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: April 2, 2019
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, AGC Inc., JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Yoshitake Toda, Katsuro Hayashi, Setsuro Ito, Satoru Watanabe, Naomichi Miyakawa, Toshinari Watanabe, Kazuhiro Ito
  • Publication number: 20190058142
    Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY, AGC Inc.
    Inventors: Hideo HOSONO, Yoshitake TODA, Satoru WATANABE, Toshinari WATANABE, Kazuhiro ITO, Naomichi MIYAKAWA, Nobuhiro NAKAMURA
  • Patent number: 10173202
    Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1?x?11, 1?y?8, and 0?z?4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: January 8, 2019
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Masaaki Kitano, Toshiharu Yokoyama, Yasunori Inoue, Shinji Kambara
  • Publication number: 20180374959
    Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
    Type: Application
    Filed: August 30, 2018
    Publication date: December 27, 2018
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, AGC Inc.
    Inventors: Hideo HOSONO, Toshio KAMIYA, Hideya KUMOMI, Junghwan KIM, Nobuhiro NAKAMURA, Satoru WATANABE, Naomichi MIYAKAWA
  • Publication number: 20180354791
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Application
    Filed: October 14, 2016
    Publication date: December 13, 2018
    Inventors: Fumiyasu OBA, Hideo HOSONO, Hidenori HIRAMATSU, Hideya KUMOMI, Yu KUMAGAI, Soshi IIMURA, Yoshinori MURABA, Lee Alan BURTON, Isao TANAKA, Yoyo HINUMA
  • Publication number: 20180327272
    Abstract: The present invention provides a supported metal catalyst, a method for synthesizing ammonia using said catalyst, and a supported metal material in which a transition metal is supported on a support, wherein the support is a metal hydride represented by general formula (1): XHn . . . (1); and in general formula (1), X represents at least one selected from the group consisting of atoms from Groups 2 and 3, and lanthanoid atoms, and n is in a range of 2<n<3.
    Type: Application
    Filed: November 9, 2016
    Publication date: November 15, 2018
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Michikazu HARA, Masaaki KITANO, Hiroshi MIZOGUCHI, Toshiharu YOKOYAMA, Kyosuke YAMAGATA
  • Patent number: 10124319
    Abstract: If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 1015 cm?3 or more and a specific surface area of 5 m2g?1 or more is produced by: the following steps: (1) forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: November 13, 2018
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Michikazu Hara, Yasunori Inoue, Masaaki Kitano, Fumitaka Hayashi, Toshiharu Yokoyama, Satoru Matsuishi, Yoshitake Toda
  • Publication number: 20180323313
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 8, 2018
    Inventors: Hideo HOSONO, Masahiro HIRANO, Hiromichi OTA, Toshio KAMIYA, Kenji NOMURA
  • Patent number: 10118162
    Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1?x?11, 1?y?8, and 0?z?4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: November 6, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Masaaki Kitano, Toshiharu Yokoyama, Yasunori Inoue, Shinji Kambara
  • Publication number: 20180304237
    Abstract: An electride, which is more stable and can be more easily obtained, is provided or is made available, and as a result, a catalyst particularly useful for chemical synthesis, in which the electride is particularly used, is provided. A transition metal-supported intermetallic compound having a transition metal supported on an intermetallic compound represented by the following formula (1): A5X3??(1) wherein A represents a rare earth element, and X represents Si or Ge.
    Type: Application
    Filed: December 22, 2016
    Publication date: October 25, 2018
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Masaaki KITANO, Tomofumi TADA, Toshiharu YOKOYAMA, Yoshitake TODA, Yangfan LU, Jiang LI
  • Publication number: 20180257061
    Abstract: The invention provides a Laves phase intermetallic compound having a composition represented by general formula ARu2 (A is Y, Sc, or at least one element selected from lanthanoid elements excluding Ce), the crystallite size thereof being 1 nm to 100 nm; a catalyst including the intermetallic compound as an active ingredient; and a method for producing ammonia using the same.
    Type: Application
    Filed: September 15, 2016
    Publication date: September 13, 2018
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Toshiharu YOKOYAMA, Masaaki KITANO, Hiroshi MIZOGUCHI, Takaya OGAWA
  • Patent number: 10032931
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: July 24, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura