Patents by Inventor Hideo Hosono

Hideo Hosono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170186989
    Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 k? to 100 M?.
    Type: Application
    Filed: March 16, 2017
    Publication date: June 29, 2017
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY, Asahi Glass Company, Limited
    Inventors: Hideo HOSONO, Yoshitake TODA, Nobuhiro NAKAMURA, Naomichi MIYAKAWA, Satoru WATANABE, Toshinari WATANABE
  • Publication number: 20170186984
    Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
    Type: Application
    Filed: March 16, 2017
    Publication date: June 29, 2017
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY, Asahi Glass Company, Limited
    Inventors: Hideo HOSONO, Yoshitake TODA, Satoru WATANABE, Toshinari WATANABE, Kazuhiro ITO, Naomichi MIYAKAWA, Nobuhiro NAKAMURA
  • Publication number: 20170125605
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: January 10, 2017
    Publication date: May 4, 2017
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Publication number: 20170095793
    Abstract: If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 1015 cm?3 or more and a specific surface area of 5 m2g?1 or more is produced by: the following steps: (1) forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.
    Type: Application
    Filed: December 19, 2016
    Publication date: April 6, 2017
    Applicants: TOKYO INSTITTUE OF TECHNOLOGY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Michikazu Hara, Yasunori Inoue, Masaaki Kitano, Fumitaka Hayashi, Toshiharu Yokoyama, Satoru Matsuishi, Yoshitake Toda
  • Publication number: 20170088433
    Abstract: The ammonia synthesis catalyst of the present invention, comprises: a powder of a perovskite oxyhydride having hydride (H?) incorporated therein as a support; and a metal or a metal compound exhibiting a catalytic activity for ammonia synthesis, supported on the support, and the perovskite oxyhydride is represented by ATiO3-xHx (wherein A represents Ca, Sr, or Ba, and 0.1?x?0.6).
    Type: Application
    Filed: January 9, 2015
    Publication date: March 30, 2017
    Inventors: Hiroshi KAGEYAMA, Yoji KOBAYASHI, Naoya MASUDA, Hideo HOSONO
  • Patent number: 9605357
    Abstract: A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: March 28, 2017
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Tomofumi Susaki, Hideo Hosono, Tadahiro Fujihashi, Yoshitake Toda
  • Publication number: 20170072382
    Abstract: The invention related to a material that can stably hold an imide anion (NH2?) therein even in the atmosphere or in a solvent, and a method for synthesizing the material and a use of the material. A mayenite-type compound into which imide anions are incorporated at a concentration of 1×1018 cm?3 or more are provided. The mayenite-type compound can be produced by heating a mayenite-type compound including electrons or free oxygen ions in a cage thereof, in liquefied ammonia at 450 to 700° C. and at a pressure of 30 to 100 MPa. The compound has properties such that active imide anions can be easily incorporated into the compound and the active imide anions can be easily released in the form of ammonia from the compound, and the compound has chemical stability.
    Type: Application
    Filed: February 12, 2015
    Publication date: March 16, 2017
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Fumitaka HAYASHI, Toshiharo YOKOYAMA, Masaaki KITANO
  • Publication number: 20170073229
    Abstract: The method for producing a perovskite metal oxynitride of the present invention, comprises: a hydrogenation step (A) of forming a perovskite oxyhydride in which an oxide ion (O2?) and a hydride ion (H?) coexist, by reducing a perovskite oxide through a reductive oxygen elimination reaction using a metal hydride; and a nitriding step (B) of forming a perovskite oxynitride containing a nitride ion (N3?) by heat-treating the perovskite oxyhydride in the presence of a nitrogen source substance at a temperature of 300° C. or higher and 600° C. or lower and exchanging the hydride ion (H?) for a nitride ion (N3?).
    Type: Application
    Filed: January 9, 2015
    Publication date: March 16, 2017
    Inventors: Hiroshi KAGEYAMA, Yoji KOBAYASHI, Kohei AIZU, Wataru YOSHIMUNE, Hideo HOSONO
  • Publication number: 20170058198
    Abstract: A phosphor is represented by the general formula aMIX.MII1-xMIMVO4:(Re)x where MI is at least one atomic element selected from the group consisting of K, Li, Na, Rb, Cs, Fr, Cu, and Ag, with K being essential; MII is at least one atomic element selected from the group consisting of Mg, Ca, Sr, Ba, Ra, Mn, Zn, Cd, and Sn; MV is at least one atomic element selected from the group consisting of P, V, Nb, Ta, As, Sb, and Bi; X is at least one halogen element, with F being essential; Re is at least one atomic element selected from the group consisting of rare earth elements, with Eu being essential; and a is in the range 0.6?a?1.4.
    Type: Application
    Filed: August 26, 2016
    Publication date: March 2, 2017
    Applicants: Koito Manufacturing Co., Ltd., Tokyo Institute of Technology, National University Corporation Nagoya University
    Inventors: Hisayoshi DAICHO, Yu SHINOMIYA, Kiminori ENOMOTO, Hideo HOSONO, Satoru MATSUISHI, Hiroshi SAWA, Akitoshi NAKANO
  • Patent number: 9583637
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: February 28, 2017
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 9573822
    Abstract: If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 1015 cm?3 or more and a specific surface area of 5 m2g?1 or more is produced by: (1) a step for forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) a step for forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) a step for forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) a step for injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.
    Type: Grant
    Filed: August 20, 2013
    Date of Patent: February 21, 2017
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Michikazu Hara, Yasunori Inoue, Masaaki Kitano, Fumitaka Hayashi, Toshiharu Yokoyama, Satoru Matsuishi, Yoshitake Toda
  • Publication number: 20160361712
    Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1?x?11, 1?y?8, and 0?z?4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C.
    Type: Application
    Filed: February 12, 2015
    Publication date: December 15, 2016
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Michikazu HARA, Masaaki KITANO, Toshiharu YOKOYAMA, Yasunori INOUE, Shinji KAMBARA
  • Publication number: 20160340182
    Abstract: A metal-supporting catalyst for decomposing ammonia into hydrogen and nitrogen. The catalyst shows a high performance with a low cost and being advantageous from the viewpoint of resources, and an efficient method for producing hydrogen using the catalyst. The catalyst catalytically decomposes ammonia gas to generate hydrogen. The hydrogen generation catalyst includes, as a support, a mayenite type compound having oxygen ions enclosed therein or a mayenite type compound having 1015 cm?3 or more of conduction electrons or hydrogen anions enclosed therein, and metal grains for decomposing ammonia are supported on the surface of the support. Hydrogen is produced by continuously supplying 0.1-100 vol % of ammonia gas to a catalyst layer that comprises the aforesaid catalyst, and reacting the same at a reaction pressure of 0.01-1.0 MPa, at a reaction temperature of 300-800° C. and at a weight hourly space velocity (WHSV) of 500/mlg?1h?1 or higher.
    Type: Application
    Filed: July 15, 2016
    Publication date: November 24, 2016
    Applicant: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Fumitaka Hayashi, Toshiharu Yokoyama, Yoshitake Toda, Michikazu Hara, Masaaki Kitano
  • Publication number: 20160285027
    Abstract: A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.
    Type: Application
    Filed: June 10, 2016
    Publication date: September 29, 2016
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY, ASAHI GLASS COMPANY, LIMITED
    Inventors: HIDEO HOSONO, YOSHITAKE TODA, TOSHINARI WATANABE, NAOMICHI MIYAKAWA, KAZUHIRO ITO, SATORU WATANABE, AKIRA MITSUI, KAZUTO OHKOSHI
  • Patent number: 9440228
    Abstract: [Problem] Many oxide-ion conductors exhibit high functionality at high temperatures due to the large weight and charge of oxide ions, and it has been difficult to achieve the functionality at low temperatures. [Solution] A perovskite oxide having hydride ion conductivity, at least 1 at % of the oxide ions (O2?) contained in a titanium-containing perovskite oxide being substituted with hydride ions (H?). This oxide, in which negatively charged hydride ions (H?) are used for the ionic conduction, has both hydride ion conductivity and electron conductivity. As a starting material, the titanium-containing perovskite oxide is kept together with a powder of an alkali metal or alkaline-earth metal hydride selected from LiH, CaH2, SrH2, and BaH2 in a temperature range of 300° C. or higher and lower than the melting point of the hydride in a vacuum or an inert gas atmosphere to substitute some of the oxide ions in the oxide with the hydride ions, resulting in the introduction of the hydride ions into oxygen sites.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: September 13, 2016
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Hiroshi Kageyama, Yoji Kobayashi, Mikio Takano, Takeshi Yajima
  • Patent number: 9368739
    Abstract: A light emitting device including an organic electroluminescence element is provided. The light emitting device may be a display device or a lighting device. The organic electroluminescence element includes an anode, a light emitting layer, and a cathode that are arranged in this order. An electron injection layer is arranged between the light emitting layer and the cathode. The electron injection layer is made of an amorphous C12A7 electride.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: June 14, 2016
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, Asahi Glass Company, Limited
    Inventors: Hideo Hosono, Yoshitake Toda, Setsuro Ito, Satoru Watanabe, Naomichi Miyakawa, Kazuhiro Ito, Toshinari Watanabe
  • Patent number: 9269826
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Grant
    Filed: January 5, 2011
    Date of Patent: February 23, 2016
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Publication number: 20150325707
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: July 22, 2015
    Publication date: November 12, 2015
    Inventors: MASAFUMI SANO, KATSUMI NAKAGAWA, HIDEO HOSONO, TOSHIO KAMIYA, KENJI NOMURA
  • Patent number: 9150423
    Abstract: The present invention provides a catalyst substance that is stable and performs well in the synthesis of ammonia, one of the most important chemical substances for fertilizer ingredients and the like. The catalyst substance exhibits catalytic activity under mild synthesis conditions not requiring high pressure, and is also advantageous from a resource perspective. Further provided is a method for producing the same. This catalyst comprises a supported metal catalyst that is supported on a mayenite type compound including conduction electrons of 1015 cm?3 or more and serving as a support for the ammonia synthesis catalyst. The mayenite type compound used as the support may take any form, including that of powder, a porous material, a sintered body, a thin-film, or a single crystal. Use of this catalyst makes it possible to increase the electron donating ability toward a transition metal.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: October 6, 2015
    Assignee: TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Masaaki Kitano, Sung Wng Kim, Satoru Matsuishi, Yoshitake Toda, Toshiharu Yokoyama, Fumitaka Hayashi
  • Patent number: 9130049
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: September 8, 2015
    Assignees: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Japan Science and Technology Agency
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura