Abstract: Provided is a method for manufacturing a catalyst with which it is possible to obtain a supported metal ammonia synthesis catalyst, in which there are restrictions in terms of producing method and producing facility, and particularly large restrictions for industrial-scale producing, in a more simple manner and so that the obtained catalyst has a high activity. This method for manufacturing an ammonia synthesis catalyst includes: a first step for preparing 12CaO.7Al2O3 having a specific surface area of 5 m2/g or above; a second step for supporting a ruthenium compound on the 12CaO.7Al2O3; and a third step for performing a reduction process on the 12CaO.7Al2O3 supporting the ruthenium compound, obtained in the second step. This invention is characterized in that the reduction process is performed until the average particle diameter of the ruthenium after the reduction process has increased by at least 15% in relation to the average particle diameter of the ruthenium before the reduction process.

Abstract: An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1). M(NH2)x??(1) (In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.).

Abstract: Disclosed herein is an amorphous C12A7 electride thin film which has an electron density of greater than or equal to 2.0×1018 cm?3 and less than or equal to 2.3×1021 cm?3, and exhibits a light absorption at a photon energy position of 4.6 eV. Also disclosed herein is an amorphous thin film which is fabricated using a target made of a crystalline C12A7 electride, and containing an electride of an amorphous solid material includig calcium, aluminum, and oxygen, in which an Al/Ca molar ratio of the thin film is 0.5 to 4.7.

Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm?3 to 2.3×1021 cm?3.

Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.

Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1?x?11, 1?y?8, and 0?z?4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C.

Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.

Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

Abstract: The present invention provides a supported metal catalyst, a method for synthesizing ammonia using said catalyst, and a supported metal material in which a transition metal is supported on a support, wherein the support is a metal hydride represented by general formula (1): XHn . . . (1); and in general formula (1), X represents at least one selected from the group consisting of atoms from Groups 2 and 3, and lanthanoid atoms, and n is in a range of 2<n<3.

Abstract: If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 1015 cm?3 or more and a specific surface area of 5 m2g?1 or more is produced by: the following steps: (1) forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1?x?11, 1?y?8, and 0?z?4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C.

Abstract: An electride, which is more stable and can be more easily obtained, is provided or is made available, and as a result, a catalyst particularly useful for chemical synthesis, in which the electride is particularly used, is provided. A transition metal-supported intermetallic compound having a transition metal supported on an intermetallic compound represented by the following formula (1): A5X3??(1) wherein A represents a rare earth element, and X represents Si or Ge.

Abstract: The invention provides a Laves phase intermetallic compound having a composition represented by general formula ARu2 (A is Y, Sc, or at least one element selected from lanthanoid elements excluding Ce), the crystallite size thereof being 1 nm to 100 nm; a catalyst including the intermetallic compound as an active ingredient; and a method for producing ammonia using the same.

Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: The ammonia synthesis catalyst of the present invention, comprises: a powder of a perovskite oxyhydride having hydride (H?) incorporated therein as a support; and a metal or a metal compound exhibiting a catalytic activity for ammonia synthesis, supported on the support, and the perovskite oxyhydride is represented by ATiO3-xHx (wherein A represents Ca, Sr, or Ba, and 0.1?x?0.6).

Abstract: The invention related to a material that can stably hold an imide anion (NH2?) therein even in the atmosphere or in a solvent, and a method for synthesizing the material and a use of the material. A mayenite-type compound into which imide anions are incorporated at a concentration of 1×1018 cm?3 or more are provided. The mayenite-type compound can be produced by heating a mayenite-type compound including electrons or free oxygen ions in a cage thereof, in liquefied ammonia at 450 to 700° C. and at a pressure of 30 to 100 MPa. The compound has properties such that active imide anions can be easily incorporated into the compound and the active imide anions can be easily released in the form of ammonia from the compound, and the compound has chemical stability.

Abstract: A metal-supporting catalyst for decomposing ammonia into hydrogen and nitrogen. The catalyst shows a high performance with a low cost and being advantageous from the viewpoint of resources, and an efficient method for producing hydrogen using the catalyst. The catalyst catalytically decomposes ammonia gas to generate hydrogen. The hydrogen generation catalyst includes, as a support, a mayenite type compound having oxygen ions enclosed therein or a mayenite type compound having 1015 cm?3 or more of conduction electrons or hydrogen anions enclosed therein, and metal grains for decomposing ammonia are supported on the surface of the support. Hydrogen is produced by continuously supplying 0.1-100 vol % of ammonia gas to a catalyst layer that comprises the aforesaid catalyst, and reacting the same at a reaction pressure of 0.01-1.0 MPa, at a reaction temperature of 300-800° C. and at a weight hourly space velocity (WHSV) of 500/mlg?1h?1 or higher.