Patents by Inventor Hideo Hosono

Hideo Hosono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190058142
    Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
    Type: Application
    Filed: October 24, 2018
    Publication date: February 21, 2019
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY, AGC Inc.
    Inventors: Hideo HOSONO, Yoshitake TODA, Satoru WATANABE, Toshinari WATANABE, Kazuhiro ITO, Naomichi MIYAKAWA, Nobuhiro NAKAMURA
  • Patent number: 10173202
    Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1?x?11, 1?y?8, and 0?z?4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: January 8, 2019
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Masaaki Kitano, Toshiharu Yokoyama, Yasunori Inoue, Shinji Kambara
  • Publication number: 20180374959
    Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
    Type: Application
    Filed: August 30, 2018
    Publication date: December 27, 2018
    Applicants: TOKYO INSTITUTE OF TECHNOLOGY, AGC Inc.
    Inventors: Hideo HOSONO, Toshio KAMIYA, Hideya KUMOMI, Junghwan KIM, Nobuhiro NAKAMURA, Satoru WATANABE, Naomichi MIYAKAWA
  • Publication number: 20180354791
    Abstract: The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
    Type: Application
    Filed: October 14, 2016
    Publication date: December 13, 2018
    Inventors: Fumiyasu OBA, Hideo HOSONO, Hidenori HIRAMATSU, Hideya KUMOMI, Yu KUMAGAI, Soshi IIMURA, Yoshinori MURABA, Lee Alan BURTON, Isao TANAKA, Yoyo HINUMA
  • Publication number: 20180327272
    Abstract: The present invention provides a supported metal catalyst, a method for synthesizing ammonia using said catalyst, and a supported metal material in which a transition metal is supported on a support, wherein the support is a metal hydride represented by general formula (1): XHn . . . (1); and in general formula (1), X represents at least one selected from the group consisting of atoms from Groups 2 and 3, and lanthanoid atoms, and n is in a range of 2<n<3.
    Type: Application
    Filed: November 9, 2016
    Publication date: November 15, 2018
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Michikazu HARA, Masaaki KITANO, Hiroshi MIZOGUCHI, Toshiharu YOKOYAMA, Kyosuke YAMAGATA
  • Patent number: 10124319
    Abstract: If a conductive mayenite compound having a large specific surface area is obtained, the usefulness thereof in respective applications is remarkably increased. A conductive mayenite compound powder having a conduction electron density of 1015 cm?3 or more and a specific surface area of 5 m2g?1 or more is produced by: the following steps: (1) forming a precursor powder by subjecting a mixture of a starting material powder and water to a hydrothermal treatment; (2) forming a mayenite compound powder by heating and dehydrating the precursor powder; (3) forming an activated mayenite compound powder by heating the compound powder in an inert gas atmosphere or in a vacuum; and (4) injecting electrons into the mayenite compound through a reduction treatment by mixing the activated mayenite compound powder with a reducing agent.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: November 13, 2018
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Michikazu Hara, Yasunori Inoue, Masaaki Kitano, Fumitaka Hayashi, Toshiharu Yokoyama, Satoru Matsuishi, Yoshitake Toda
  • Publication number: 20180323313
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 8, 2018
    Inventors: Hideo HOSONO, Masahiro HIRANO, Hiromichi OTA, Toshio KAMIYA, Kenji NOMURA
  • Patent number: 10118162
    Abstract: A catalyst is provided which is used for continuously synthesizing ammonia using a gas containing hydrogen and nitrogen as a raw material, wherein a transition metal which exhibits catalytic activity is supported by a support, and the support is a two-dimensional electride or a precursor thereof. The two-dimensional electride or the precursor thereof is a metal nitride represented by MxNyHz (M represents one or two or more of Group II metals selected from the group consisting of Mg, Ca, Sr and Ba, and x, y and z are in ranges of 1?x?11, 1?y?8, and 0?z?4 respectively, in which x is an integer, and y and z are not limited to an integer) or M3N2 (M is the same as above), or a metal carbide selected from the group consisting of Y2C, Sc2C, Gd2C, Tb2C, Dy2C, Ho2C and Er2C.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: November 6, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Michikazu Hara, Masaaki Kitano, Toshiharu Yokoyama, Yasunori Inoue, Shinji Kambara
  • Publication number: 20180304237
    Abstract: An electride, which is more stable and can be more easily obtained, is provided or is made available, and as a result, a catalyst particularly useful for chemical synthesis, in which the electride is particularly used, is provided. A transition metal-supported intermetallic compound having a transition metal supported on an intermetallic compound represented by the following formula (1): A5X3??(1) wherein A represents a rare earth element, and X represents Si or Ge.
    Type: Application
    Filed: December 22, 2016
    Publication date: October 25, 2018
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Masaaki KITANO, Tomofumi TADA, Toshiharu YOKOYAMA, Yoshitake TODA, Yangfan LU, Jiang LI
  • Publication number: 20180257061
    Abstract: The invention provides a Laves phase intermetallic compound having a composition represented by general formula ARu2 (A is Y, Sc, or at least one element selected from lanthanoid elements excluding Ce), the crystallite size thereof being 1 nm to 100 nm; a catalyst including the intermetallic compound as an active ingredient; and a method for producing ammonia using the same.
    Type: Application
    Filed: September 15, 2016
    Publication date: September 13, 2018
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Toshiharu YOKOYAMA, Masaaki KITANO, Hiroshi MIZOGUCHI, Takaya OGAWA
  • Patent number: 10032931
    Abstract: A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: July 24, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Patent number: 10032930
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: July 24, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Patent number: 10016742
    Abstract: The invention related to a material that can stably hold an imide anion (NH2?) therein even in the atmosphere or in a solvent, and a method for synthesizing the material and a use of the material. A mayenite-type compound into which imide anions are incorporated at a concentration of 1×1018 cm?3 or more are provided. The mayenite-type compound can be produced by heating a mayenite-type compound including electrons or free oxygen ions in a cage thereof, in liquefied ammonia at 450 to 700° C. and at a pressure of 30 to 100 MPa. The compound has properties such that active imide anions can be easily incorporated into the compound and the active imide anions can be easily released in the form of ammonia from the compound, and the compound has chemical stability.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: July 10, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo Hosono, Fumitaka Hayashi, Toshiharu Yokoyama, Masaaki Kitano
  • Patent number: 10017395
    Abstract: The ammonia synthesis catalyst of the present invention, comprises: a powder of a perovskite oxyhydride having hydride (H?) incorporated therein as a support; and a metal or a metal compound exhibiting a catalytic activity for ammonia synthesis, supported on the support, and the perovskite oxyhydride is represented by ATiO3-xHx (wherein A represents Ca, Sr, or Ba, and 0.1?x?0.6).
    Type: Grant
    Filed: January 9, 2015
    Date of Patent: July 10, 2018
    Assignee: Japan Science and Technology Agency
    Inventors: Hiroshi Kageyama, Yoji Kobayashi, Naoya Masuda, Hideo Hosono
  • Patent number: 9981845
    Abstract: A metal-supporting catalyst for decomposing ammonia into hydrogen and nitrogen. The catalyst shows a high performance with a low cost and being advantageous from the viewpoint of resources, and an efficient method for producing hydrogen using the catalyst. The catalyst catalytically decomposes ammonia gas to generate hydrogen. The hydrogen generation catalyst includes, as a support, a mayenite type compound having oxygen ions enclosed therein or a mayenite type compound having 1015 cm?3 or more of conduction electrons or hydrogen anions enclosed therein, and metal grains for decomposing ammonia are supported on the surface of the support. Hydrogen is produced by continuously supplying 0.1-100 vol % of ammonia gas to a catalyst layer that comprises the aforesaid catalyst, and reacting the same at a reaction pressure of 0.01-1.0 MPa, at a reaction temperature of 300-800° C. and at a weight hourly space velocity (WHSV) of 500/mlg?1h?1 or higher.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: May 29, 2018
    Assignees: TOKYO INSTITUTE OF TECHNOLOGY, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Fumitaka Hayashi, Toshiharu Yokoyama, Yoshitake Toda, Michikazu Hara, Masaaki Kitano
  • Patent number: 9947803
    Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: April 17, 2018
    Assignees: JAPAN SCIENCE AND TECHNOLOGY AGENCY, CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECH
    Inventors: Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Toshio Kamiya, Kenji Nomura
  • Publication number: 20170355607
    Abstract: An ammonia synthesis catalyst having high activity is obtained by having a two-dimensional electride compound having a lamellar crystal structure such as Ca2N support a transition metal. However, since the two-dimensional electride compound is unstable, the stability of the catalyst is low. In addition, in cases where a two-dimensional electride compound is used as a catalyst support, it is difficult to shape the catalyst depending on reactions since the two-dimensional electride compound has poor processability. A composite which includes a transition metal, a support and a metal amide compound, wherein the support is a metal oxide or a carbonaceous support; and the metal amide compound is a metal amide compound represented by general formula (1). M(NH2)x . . . (1) (In general formula (1), M represents at least one metal atom selected from the group consisting of Li, Na, K, Be, Mg, Ca, Sr, Ba and Eu; and x represents the valence of M.
    Type: Application
    Filed: December 4, 2015
    Publication date: December 14, 2017
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Michikazu HARA, Masaaki KITANO, Toshiharu YOKOYAMA, Yasunori INOUE
  • Publication number: 20170342450
    Abstract: Provided is a novel production system that does not involve, or can minimize, the transport of liquid ammonia in the production of an organic compound or the production of a microorganism by microbial fermentation. A production system for an organic compound or a microorganism includes: an ammonia synthesis apparatus in which an ammonia-containing gas is synthesized by reaction of a source gas containing hydrogen and nitrogen in the presence of a supported ruthenium catalyst; and a culture apparatus that cultures a microorganism having organic compound productivity using ammonia originating from the ammonia-containing gas obtained by using the ammonia synthesis apparatus.
    Type: Application
    Filed: August 11, 2017
    Publication date: November 30, 2017
    Applicants: AJINOMOTO CO., INC., TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Mitsuhiro Kishino, Hiroyuki Kojima, Hideo Hosono, Michikazu Hara, Masaaki Kitano, Toshiharu Yokoyama, Toru Numaguchi, Munenobu Ito, Kazuteru Yamada, Hiromi Noguchi
  • Publication number: 20170342449
    Abstract: Provided is a novel production system for a product selected from a nitrogen-containing product and a fermented and cultured product that does not involve (or can minimize) the transport of liquid ammonia.
    Type: Application
    Filed: August 11, 2017
    Publication date: November 30, 2017
    Applicants: AJINOMOTO CO., INC., TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Mitsuhiro Kishino, Hiroyuki Kojima, Hideo Hosono, Michikazu Hara, Masaaki Kitano, Toshiharu Yokoyama, Toru Numaguchi, Munenobu Ito, Kazuteru Yamada, Hiromi Noguchi
  • Patent number: 9776866
    Abstract: The method for producing a perovskite metal oxynitride of the present invention, comprises: a hydrogenation step (A) of forming a perovskite oxyhydride in which an oxide ion (O2?) and a hydride ion (H?) coexist, by reducing a perovskite oxide through a reductive oxygen elimination reaction using a metal hydride; and a nitriding step (B) of forming a perovskite oxynitride containing a nitride ion (N3?) by heat-treating the perovskite oxyhydride in the presence of a nitrogen source substance at a temperature of 300° C. or higher and 600° C. or lower and exchanging the hydride ion (H?) for a nitride ion (N3?).
    Type: Grant
    Filed: January 9, 2015
    Date of Patent: October 3, 2017
    Assignee: Japan Science and Technology Agency
    Inventors: Hiroshi Kageyama, Yoji Kobayashi, Kohei Aizu, Wataru Yoshimune, Hideo Hosono