Patents by Inventor Hideyuki Kishida

Hideyuki Kishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20160181432
    Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.
    Type: Application
    Filed: February 25, 2016
    Publication date: June 23, 2016
    Inventors: Masashi TSUBUKU, Yusuke NONAKA, Noritaka ISHIHARA, Masashi OOTA, Hideyuki KISHIDA
  • Semiconductor device and method for manufacturing the same
    Patent number: 9324878
    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: April 26, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichiro Sakata, Takuya Hirohashi, Hideyuki Kishida
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20160111282
    Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
    Type: Application
    Filed: December 17, 2015
    Publication date: April 21, 2016
    Inventors: Kengo AKIMOTO, Junichiro SAKATA, Takuya HIROHASHI, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA
  • Method for manufacturing a semiconductor device
    Patent number: 9318617
    Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: April 19, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masayuki Sakakura, Ryosuke Watanabe, Junichiro Sakata, Kengo Akimoto, Akiharu Miyanaga, Takuya Hirohashi, Hideyuki Kishida
  • Thin film transistor
    Patent number: 9306075
    Abstract: A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.
    Type: Grant
    Filed: February 13, 2015
    Date of Patent: April 5, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Junichiro Sakata, Masayuki Sakakura, Masahiro Takahashi, Hideyuki Kishida, Shunpei Yamazaki
  • Composition containing reduced coenzyme Q10 and production method thereof
    Patent number: 9295656
    Abstract: The present invention provides a particulate composition wherein an oil component containing reduced coenzyme Q10 is polydispersed forming a domain in a matrix containing a water-soluble excipient, which simultaneously shows high oxidative stability and high oral absorbability, a production method thereof, and a stabilizing method thereof. It also provides a food, food with nutrient function claims, food for specified health uses, dietary supplement, nutritional product, animal drug, drink, feed, pet food, cosmetic, pharmaceutical product, therapeutic drug, prophylactic drug and the like, which contain the composition.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: March 29, 2016
    Assignee: KANEKA CORPORATION
    Inventors: Takashi Ueda, Shinsuke Akao, Shiro Kitamura, Hideyuki Kishida, Takahiro Ueda
  • THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
    Publication number: 20160079435
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: November 16, 2015
    Publication date: March 17, 2016
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • Semiconductor device
    Patent number: 9281407
    Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: March 8, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masashi Tsubuku, Yusuke Nonaka, Noritaka Ishihara, Masashi Oota, Hideyuki Kishida
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20160049520
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Application
    Filed: October 28, 2015
    Publication date: February 18, 2016
    Inventors: Shunpei YAMAZAKI, Jun KOYAMA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Akiharu MIYANAGA, Junpei SUGAO, Hideki UOCHI, Yasuo NAKAMURA
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20160043231
    Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
    Type: Application
    Filed: October 22, 2015
    Publication date: February 11, 2016
    Inventors: Junichi KOEZUKA, Shinji OHNO, Yuichi SATO, Masahiro TAKAHASHI, Hideyuki KISHIDA
  • Semiconductor device and method for manufacturing the same
    Patent number: 9252288
    Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
    Type: Grant
    Filed: December 24, 2013
    Date of Patent: February 2, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kengo Akimoto, Junichiro Sakata, Takuya Hirohashi, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga
  • Oxide semiconductor film and semiconductor device
    Patent number: 9214563
    Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.
    Type: Grant
    Filed: July 22, 2013
    Date of Patent: December 15, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masayuki Sakakura, Ryosuke Watanabe, Junichiro Sakata, Kengo Akimoto, Akiharu Miyanaga, Takuya Hirohashi, Hideyuki Kishida
  • Thin film transistor, method for manufacturing the same, and semiconductor device
    Patent number: 9209283
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: December 8, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshikazu Kondo, Hideyuki Kishida
  • Semiconductor device and manufacturing method thereof
    Patent number: 9190528
    Abstract: An object is to provide a transistor including an oxide layer which includes Zn and does not include a rare metal such as In or Ga. Another object is to reduce an off current and stabilize electric characteristics in the transistor including an oxide layer which includes Zn. A transistor including an oxide layer including Zn is formed by stacking an oxide semiconductor layer including insulating oxide over an oxide layer so that the oxide layer is in contact with a source electrode layer or a drain electrode layer with the oxide semiconductor layer including insulating oxide interposed therebetween, whereby variation in the threshold voltage of the transistor can be reduced and electric characteristics can be stabilized.
    Type: Grant
    Filed: September 18, 2014
    Date of Patent: November 17, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hiromichi Godo, Hideyuki Kishida
  • Semiconductor device having c-axis aligned portions and doped portions
    Patent number: 9184296
    Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: November 10, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Shinji Ohno, Yuichi Sato, Masahiro Takahashi, Hideyuki Kishida
  • Semiconductor device and method for manufacturing the same
    Patent number: 9177855
    Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: November 3, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga, Junpei Sugao, Hideki Uochi, Yasuo Nakamura
  • SEMICONDUCTOR DEVICE
    Publication number: 20150236165
    Abstract: Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including an oxide semiconductor and improving reliability. Hence, hydrogen is attracted from the oxide semiconductor and trapped in a region of an insulating film which overlaps with a source region and a drain region of the oxide semiconductor. Impurities such as argon, nitrogen, carbon, phosphorus, or boron are added to the region of the insulating film which overlaps with the source region and the drain region of the oxide semiconductor, thereby generating a defect. Hydrogen in the oxide semiconductor is attracted to the defect in the insulating film. The defect in the insulating film is stabilized by the presence of hydrogen.
    Type: Application
    Filed: April 30, 2015
    Publication date: August 20, 2015
    Inventors: Masashi TSUBUKU, Yusuke NONAKA, Noritaka ISHIHARA, Masashi OOTA, Hideyuki KISHIDA
  • THIN FILM TRANSISTOR
    Publication number: 20150162450
    Abstract: A thin film transistor including an oxide semiconductor with favorable electrical characteristics is provided. The thin film transistor includes a gate electrode provided over a substrate, a gate insulating film provided over the gate electrode, an oxide semiconductor film provided over the gate electrode and on the gate insulating film, a metal oxide film provided on the oxide semiconductor film, and a metal film provided on the metal oxide film. The oxide semiconductor film is in contact with the metal oxide film, and includes a region whose concentration of metal is higher than that of any other region in the oxide semiconductor film (a high metal concentration region). In the high metal concentration region, the metal contained in the oxide semiconductor film may be present as a crystal grain or a microcrystal.
    Type: Application
    Filed: February 13, 2015
    Publication date: June 11, 2015
    Inventors: Akiharu MIYANAGA, Junichiro SAKATA, Masayuki SAKAKURA, Masahiro TAKAHASHI, Hideyuki KISHIDA, Shunpei YAMAZAKI
  • THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
    Publication number: 20150162422
    Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 11, 2015
    Inventors: Toshikazu KONDO, Hideyuki KISHIDA
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20150137119
    Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.
    Type: Application
    Filed: December 15, 2014
    Publication date: May 21, 2015
    Inventors: Junichiro SAKATA, Takuya HIROHASHI, Hideyuki KISHIDA