Patents by Inventor Hiroaki Yoda

Hiroaki Yoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734053
    Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: August 4, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mizue Ishikawa, Yushi Kato, Soichi Oikawa, Hiroaki Yoda
  • Publication number: 20200168260
    Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first counter magnetic layer is provided between the third portion and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first portion toward the second portion. The first nonmagnetic layer is provided between the first magnetic layer and the first counter magnetic layer. The third portion includes a first position, and a second position between the first position and the first counter magnetic layer in the first direction. A second concentration of boron at the second position is lower than a first concentration of boron at the first position.
    Type: Application
    Filed: November 27, 2019
    Publication date: May 28, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yushi KATO, Soichi OIKAWA, Hiroaki YODA
  • Publication number: 20200168790
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.
    Type: Application
    Filed: November 27, 2019
    Publication date: May 28, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Soichi OIKAWA, Yushi KATO, Hiroaki YODA
  • Publication number: 20200161536
    Abstract: According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.
    Type: Application
    Filed: November 15, 2019
    Publication date: May 21, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Satoshi SHIROTORI, Yuichi OHSAWA, Hideyuki SUGIYAMA, Altansargai BUYANDALAI, Mariko SHIMIZU, Hiroaki YODA
  • Patent number: 10643682
    Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.
    Type: Grant
    Filed: October 31, 2018
    Date of Patent: May 5, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki Yoda, Naoharu Shimomura, Yoshiaki Saito, Yuichi Ohsawa, Keiko Abe
  • Publication number: 20200090718
    Abstract: A magnetic memory device includes a conductive member, a stacked body, and a controller. The stacked body includes a first magnetic layer, a second magnetic layer provided between the conductive member and the first magnetic layer, and a third magnetic layer stacked with the first magnetic layer and the second magnetic layer. The controller causes a current to flow in the conductive member. The controller causes a current to flow between the conductive member and the stacked body. The controller is able to identify three or more levels of an electrical resistance value of the stacked body.
    Type: Application
    Filed: March 13, 2019
    Publication date: March 19, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Katsuhiko KOUI, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura, Hideyuki Sugiyama
  • Publication number: 20200075671
    Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.
    Type: Application
    Filed: November 8, 2019
    Publication date: March 5, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Jyunichi OZEKI, Masahiko NAKAYAMA, Hiroaki YODA, Eiji KITAGAWA, Takao OCHIAI, Minoru AMANO, Kenji NOMA
  • Patent number: 10580472
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: March 3, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuichi Ohsawa, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
  • Publication number: 20200058338
    Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.
    Type: Application
    Filed: February 11, 2019
    Publication date: February 20, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mizue ISHIKAWA, Yushi KATO, Soichi OIKAWA, Hiroaki YODA
  • Publication number: 20200020374
    Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.
    Type: Application
    Filed: February 12, 2019
    Publication date: January 16, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki YODA, Satoshi Takaya, Yuichi Ohsawa, Naoharu Shimomura, Katsuhiko Koui, Yushi Kato, Shinobu Fujita
  • Patent number: 10529399
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: January 7, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yuichi Ohsawa, Mariko Shimizu, Satoshi Shirotori, Hideyuki Sugiyama, Altansargai Buyandalai, Hiroaki Yoda, Katsuhiko Koui, Tomoaki Inokuchi, Naoharu Shimomura
  • Patent number: 10510949
    Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: December 17, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mariko Shimizu, Yuichi Ohsawa, Hiroaki Yoda, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai
  • Patent number: 10504574
    Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: December 10, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Altansargai Buyandalai, Naoharu Shimomura
  • Patent number: 10490730
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion in a first direction crossing a second direction being from the first portion toward the second portion. The second magnetic layer is provided between the first magnetic layer and at least a portion of the third portion. The first nonmagnetic layer includes first and second regions. The first region is provided between the first and second magnetic layers. The second region is continuous with the first region. The second region overlaps at least a portion of the second magnetic layer in the second direction. The controller is electrically connected to the first and second portions.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: November 26, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mariko Shimizu, Yuichi Ohsawa, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai, Hiroaki Yoda
  • Patent number: 10490736
    Abstract: A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: November 26, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yoshiaki Saito, Tomoaki Inokuchi, Yushi Kato, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
  • Patent number: 10483459
    Abstract: A magnetic memory according to an embodiment includes: a first conductive layer including a first to third regions arranged along a first direction, the second region being disposed between the first region and the third region; a second conductive layer including a fourth to sixth regions arranged along the first direction, the fifth region being disposed between the fourth and sixth regions; a third conductive layer electrically connected to the third and fourth regions; a first magnetoresistance device disposed to correspond to the second region, including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second magnetoresistance device to correspond to the fifth region, including a third magnetic layer, a fourth magnetic layer, and a second nonmagnetic layer, a direction from the first region to the third region differing from a direction from the fourth region to the sixth region.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: November 19, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hideyuki Sugiyama, Yuichi Ohsawa, Satoshi Shirotori, Mariko Shimizu, Altansargai Buyandalai, Hiroaki Yoda
  • Patent number: 10453513
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: October 22, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yushi Kato, Yoshiaki Saito, Mizue Ishikawa, Soichi Oikawa, Hiroaki Yoda
  • Publication number: 20190295619
    Abstract: According to one embodiment, a magnetic device includes: a first conductive layer; a first magnetoresistive effect element disposed on the first S conductive layer and including a first control terminal; and a first circuit configured to supply a first current in a first direction into the first conductive layer and apply a first control voltage to the first control terminal of the first magnetoresistive effect element, wherein in a case in which the first current is supplied to the first conductive layer, the first magnetoresistive effect element holds a value corresponding to a logical disjunction between a first value of first data in the first magnetoresistive effect element and a second value of the first control voltage corresponding to second data.
    Type: Application
    Filed: September 17, 2018
    Publication date: September 26, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tomoaki INOKUCHI, Naoharu SHIMOMURA, Katsuhiko KOUI, Yuuzo KAMIGUCHI, Kazutaka IKEGAMI, Shinobu FUJITA, Hiroaki YODA
  • Publication number: 20190287589
    Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.
    Type: Application
    Filed: August 31, 2018
    Publication date: September 19, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Altansargai BUYANDALAI, Satoshi SHIROTORI, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Hiroaki YODA, Katsuhiko KOUI
  • Publication number: 20190287597
    Abstract: According to one embodiment, a magnetic memory device includes a first member, a first memory cell, and a controller. The first member includes first, second, and third regions. The first memory cell includes first and second magnetic layers, and a first nonmagnetic layer. The second magnetic layer is provided between the third region and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second regions, and the first magnetic layer. The controller programs first information to the first memory cell by setting the first magnetic layer to a first electric potential. The controller programs second information to the first memory cell by setting the first magnetic layer to a second electric potential. The second electric potential is different from the first electric potential. The second information is different from the first information.
    Type: Application
    Filed: August 31, 2018
    Publication date: September 19, 2019
    Applicant: Kabushiki Kaisaha Toshiba
    Inventors: Katsuhiko KOUI, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura