Patents by Inventor Hiroaki Yoda
Hiroaki Yoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200075671Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.Type: ApplicationFiled: November 8, 2019Publication date: March 5, 2020Applicant: TOSHIBA MEMORY CORPORATIONInventors: Jyunichi OZEKI, Masahiko NAKAYAMA, Hiroaki YODA, Eiji KITAGAWA, Takao OCHIAI, Minoru AMANO, Kenji NOMA
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Patent number: 10580472Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.Type: GrantFiled: November 20, 2018Date of Patent: March 3, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
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Publication number: 20200058338Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.Type: ApplicationFiled: February 11, 2019Publication date: February 20, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Mizue ISHIKAWA, Yushi KATO, Soichi OIKAWA, Hiroaki YODA
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Publication number: 20200020374Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.Type: ApplicationFiled: February 12, 2019Publication date: January 16, 2020Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki YODA, Satoshi Takaya, Yuichi Ohsawa, Naoharu Shimomura, Katsuhiko Koui, Yushi Kato, Shinobu Fujita
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Patent number: 10529399Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.Type: GrantFiled: August 21, 2018Date of Patent: January 7, 2020Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Mariko Shimizu, Satoshi Shirotori, Hideyuki Sugiyama, Altansargai Buyandalai, Hiroaki Yoda, Katsuhiko Koui, Tomoaki Inokuchi, Naoharu Shimomura
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Patent number: 10510949Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.Type: GrantFiled: August 31, 2018Date of Patent: December 17, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Mariko Shimizu, Yuichi Ohsawa, Hiroaki Yoda, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai
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Patent number: 10504574Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: GrantFiled: February 28, 2018Date of Patent: December 10, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Altansargai Buyandalai, Naoharu Shimomura
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Patent number: 10490730Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion in a first direction crossing a second direction being from the first portion toward the second portion. The second magnetic layer is provided between the first magnetic layer and at least a portion of the third portion. The first nonmagnetic layer includes first and second regions. The first region is provided between the first and second magnetic layers. The second region is continuous with the first region. The second region overlaps at least a portion of the second magnetic layer in the second direction. The controller is electrically connected to the first and second portions.Type: GrantFiled: February 27, 2018Date of Patent: November 26, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Mariko Shimizu, Yuichi Ohsawa, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai, Hiroaki Yoda
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Patent number: 10490736Abstract: A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.Type: GrantFiled: March 6, 2018Date of Patent: November 26, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki Saito, Tomoaki Inokuchi, Yushi Kato, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Patent number: 10483459Abstract: A magnetic memory according to an embodiment includes: a first conductive layer including a first to third regions arranged along a first direction, the second region being disposed between the first region and the third region; a second conductive layer including a fourth to sixth regions arranged along the first direction, the fifth region being disposed between the fourth and sixth regions; a third conductive layer electrically connected to the third and fourth regions; a first magnetoresistance device disposed to correspond to the second region, including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second magnetoresistance device to correspond to the fifth region, including a third magnetic layer, a fourth magnetic layer, and a second nonmagnetic layer, a direction from the first region to the third region differing from a direction from the fourth region to the sixth region.Type: GrantFiled: March 7, 2018Date of Patent: November 19, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki Sugiyama, Yuichi Ohsawa, Satoshi Shirotori, Mariko Shimizu, Altansargai Buyandalai, Hiroaki Yoda
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Patent number: 10453513Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: GrantFiled: March 12, 2018Date of Patent: October 22, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Yoshiaki Saito, Mizue Ishikawa, Soichi Oikawa, Hiroaki Yoda
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Publication number: 20190295619Abstract: According to one embodiment, a magnetic device includes: a first conductive layer; a first magnetoresistive effect element disposed on the first S conductive layer and including a first control terminal; and a first circuit configured to supply a first current in a first direction into the first conductive layer and apply a first control voltage to the first control terminal of the first magnetoresistive effect element, wherein in a case in which the first current is supplied to the first conductive layer, the first magnetoresistive effect element holds a value corresponding to a logical disjunction between a first value of first data in the first magnetoresistive effect element and a second value of the first control voltage corresponding to second data.Type: ApplicationFiled: September 17, 2018Publication date: September 26, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Tomoaki INOKUCHI, Naoharu SHIMOMURA, Katsuhiko KOUI, Yuuzo KAMIGUCHI, Kazutaka IKEGAMI, Shinobu FUJITA, Hiroaki YODA
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Publication number: 20190287589Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.Type: ApplicationFiled: August 31, 2018Publication date: September 19, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Altansargai BUYANDALAI, Satoshi SHIROTORI, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Hiroaki YODA, Katsuhiko KOUI
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Publication number: 20190287597Abstract: According to one embodiment, a magnetic memory device includes a first member, a first memory cell, and a controller. The first member includes first, second, and third regions. The first memory cell includes first and second magnetic layers, and a first nonmagnetic layer. The second magnetic layer is provided between the third region and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second regions, and the first magnetic layer. The controller programs first information to the first memory cell by setting the first magnetic layer to a first electric potential. The controller programs second information to the first memory cell by setting the first magnetic layer to a second electric potential. The second electric potential is different from the first electric potential. The second information is different from the first information.Type: ApplicationFiled: August 31, 2018Publication date: September 19, 2019Applicant: Kabushiki Kaisaha ToshibaInventors: Katsuhiko KOUI, Hiroaki Yoda, Tomoaki Inokuchi, Naoharu Shimomura
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Publication number: 20190280189Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: ApplicationFiled: May 28, 2019Publication date: September 12, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Altansargai BUYANDALAI, Satoshi SHIROTORI, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Hiroaki YODA, Tomoaki INOKUCHI
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Publication number: 20190279699Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.Type: ApplicationFiled: August 21, 2018Publication date: September 12, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Mariko Shimizu, Satoshi Shirotori, Hideyuki Sugiyama, Altansargai Buyandalai, Hiroaki Yoda, Katsuhiko Koui, Tomoaki Inokuchi, Naoharu Shimomura
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Patent number: 10410707Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.Type: GrantFiled: June 18, 2018Date of Patent: September 10, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki Inokuchi, Naoharu Shimomura, Katsuhiko Koui, Yuuzo Kamiguchi, Satoshi Shirotori, Kazutaka Ikegami, Hiroaki Yoda
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Patent number: 10396226Abstract: A masterbatch for a solar battery sealing sheet containing: at least one ethylene resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer and an ethylene-unsaturated ester copolymer; and at least one compound selected from the group consisting of silicon dioxide and zeolite, wherein a degree of aggregation of silicon is 0 or more and 0.350 or less and the ignition loss of the compound is more than 1.7% to 15% or less.Type: GrantFiled: August 25, 2017Date of Patent: August 27, 2019Assignee: SUMITOMO CHEMICAL COMPANY, LIMITEDInventor: Hiroaki Yoda
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Patent number: 10374150Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: GrantFiled: February 26, 2018Date of Patent: August 6, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Yoshiaki Saito, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Patent number: 10360960Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: GrantFiled: September 11, 2017Date of Patent: July 23, 2019Assignee: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Soichi Oikawa, Mizue Ishikawa, Yoshiaki Saito, Hiroaki Yoda