Patents by Inventor Hiroaki Yoda
Hiroaki Yoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9966122Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: GrantFiled: March 3, 2017Date of Patent: May 8, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Hideyuki Sugiyama, Mariko Shimizu, Altansargai Buyandalai, Naoharu Shimomura
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Publication number: 20180114558Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: ApplicationFiled: December 20, 2017Publication date: April 26, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
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Patent number: 9916882Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.Type: GrantFiled: September 12, 2016Date of Patent: March 13, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Satoshi Shirotori, Hiroaki Yoda, Yuichi Ohsawa, Yuuzo Kamiguchi, Naoharu Shimomura, Tadaomi Daibou, Tomoaki Inokuchi
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Publication number: 20180062014Abstract: A masterbatch for a solar battery sealing sheet containing: at least one ethylene resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer and an ethylene-unsaturated ester copolymer; and at least one compound selected from the group consisting of silicon dioxide and zeolite, wherein a degree of aggregation of silicon is 0 or more and 0.350 or less and the ignition loss of the compound is more than 1.7% to 15% or less.Type: ApplicationFiled: August 25, 2017Publication date: March 1, 2018Inventor: Hiroaki YODA
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Publication number: 20180040357Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.Type: ApplicationFiled: March 3, 2017Publication date: February 8, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Hideyuki SUGIYAMA, Mariko SHIMIZU, Altansargai BUYANDALAI, Naoharu SHIMOMURA
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Publication number: 20180040807Abstract: A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.Type: ApplicationFiled: February 28, 2017Publication date: February 8, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki SAITO, Hiroaki Yoda, Yushi Kato, Mizue Ishikawa, Soichi Oikawa
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Publication number: 20180040812Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.Type: ApplicationFiled: March 3, 2017Publication date: February 8, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Mariko SHIMIZU, Yuichi OHSAWA, Hiroaki YODA, Hideyuki SUGIYAMA, Satoshi SHIROTORI, Altansargai BUYANDALAI
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Publication number: 20180040359Abstract: According to one embodiment, a nonvolatile memory includes a conductive line including a first portion, a second portion and a third portion therebetween, a storage element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer therebetween, and the first magnetic layer being connected to the third portion, and a circuit flowing a write current between the first and second portions, applying a first potential to the second magnetic layer, and blocking the write current flowing between the first and second portions after changing the second magnetic layer from the first potential to a second potential.Type: ApplicationFiled: March 8, 2017Publication date: February 8, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tomoaki INOKUCHI, Naoharu SHIMOMURA, Katsuhiko KOUI, Yuuzo KAMIGUCHI, Satoshi SHIROTORI, Kazutaka IKEGAMI, Hiroaki YODA
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Patent number: 9881660Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: GrantFiled: September 16, 2016Date of Patent: January 30, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki Yoda, Naoharu Shimomura, Yuichi Ohsawa, Tadaomi Daibou, Tomoaki Inokuchi, Satoshi Shirotori, Altansargai Buyandalai, Yuuzo Kamiguchi
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Patent number: 9780298Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having a variable magnetization direction, a reference layer having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a first buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the intermediate layer is provided. The recording layer comprises a first magnetic layer which is provided in a side of the intermediate layer and contains CoFe as a main component, and a second magnetic layer which is provided in a side of the first buffer layer and contains CoFe as a main component, a concentration of Fe in the first magnetic layer being higher than a concentration of Fe in the second magnetic layer. The first buffer layer comprises a nitrogen compound.Type: GrantFiled: September 18, 2015Date of Patent: October 3, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Tadaomi Daibou, Tadashi Kai, Toshihiko Nagase, Kenji Noma, Hiroaki Yoda
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Publication number: 20170263679Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein saturation magnetization of part of the first magnetic layer which is located close to the first main surface is higher than saturation magnetization of part of the first magnetic layer which is located close to the second main surface.Type: ApplicationFiled: September 16, 2016Publication date: September 14, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Jyunichi OZEKI, Masahiko NAKAYAMA, Hiroaki YODA, Eiji KITAGAWA, Takao OCHIAI, Minoru AMANO, Kenji NOMA
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Patent number: 9741928Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.Type: GrantFiled: February 11, 2016Date of Patent: August 22, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Koji Ueda, Toshihiko Nagase, Kazuya Sawada, Youngmin Eeh, Daisuke Watanabe, Hiroaki Yoda
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Publication number: 20170183431Abstract: The present invention relates to a solar cell encapsulant sheet enables achievement of a higher conversion efficiency of a solar cell and can suppress a PID phenomenon of a solar cell well, and specifically, it provides a solar cell encapsulant sheet formed of a material comprising at least one ethylene resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer, and an ethylene-unsaturated ester copolymer, wherein the volume resistivity value of the material measured at 23° C. is 1×1017 ?·cm or cm more and the average luminous transmittance of the material within a wavelength range of from 400 nm to 1200 nm is 91% or more.Type: ApplicationFiled: December 21, 2016Publication date: June 29, 2017Inventor: Hiroaki YODA
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Publication number: 20170179379Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.Type: ApplicationFiled: March 7, 2017Publication date: June 22, 2017Applicant: Kabushiki Kaisha ToshibaInventors: SATOSHI SHIROTORI, Hiroaki Yoda, Yuichi Ohsawa, Yuuzo Kamiguchi, Naoharu Shimomura, Tadaomi Daibou, Tomoaki Inokuchi
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Publication number: 20170169872Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.Type: ApplicationFiled: September 16, 2016Publication date: June 15, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroaki YODA, Naoharu SHIMOMURA, Yuichi OHSAWA, Tadaomi DAIBOU, Tomoaki INOKUCHI, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yuuzo KAMIGUCHI
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Publication number: 20170141158Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.Type: ApplicationFiled: January 31, 2017Publication date: May 18, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Tadaomi DAIBOU, Naoharu SHIMOMURA, Yuuzo KAMIGUCHI, Hiroaki YODA, Yuichi OHSAWA, Tomoaki INOKUCHI, Satoshi SHIROTORI
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Patent number: 9640752Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.Type: GrantFiled: September 21, 2015Date of Patent: May 2, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Tadashi Kai, Hiroaki Yoda
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Publication number: 20170117454Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.Type: ApplicationFiled: January 6, 2017Publication date: April 27, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masatoshi YOSHIKAWA, Hiroaki YODA, Shuichi TSUBATA, Kenji NOMA, Tatsuya KISHI, Satoshi SETO, Kazuhiro TOMIOKA
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Patent number: 9608152Abstract: The present invention relates to a solar cell encapsulant sheet comprising at least one ethylene-based resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer and an ethylene-unsaturated ester copolymer, 0.001 parts by mass to 5 parts by mass of at least one compound selected from the group consisting of silicon dioxide and zeolite, and 0.001 parts by mass to 5 parts by mass of a silane coupling agent, relative to 100 parts by mass of the ethylene-based resin respectively.Type: GrantFiled: June 2, 2014Date of Patent: March 28, 2017Assignee: Sumitomo Chemical Company, LimitedInventors: Hiroaki Yoda, Noboru Kondo
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Publication number: 20170076769Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.Type: ApplicationFiled: September 12, 2016Publication date: March 16, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Yuuzo KAMIGUCHI, Naoharu SHIMOMURA, Tadaomi DAIBOU, Tomoaki INOKUCHI