Patents by Inventor Hiroaki Yoda

Hiroaki Yoda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9741928
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: August 22, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Koji Ueda, Toshihiko Nagase, Kazuya Sawada, Youngmin Eeh, Daisuke Watanabe, Hiroaki Yoda
  • Publication number: 20170183431
    Abstract: The present invention relates to a solar cell encapsulant sheet enables achievement of a higher conversion efficiency of a solar cell and can suppress a PID phenomenon of a solar cell well, and specifically, it provides a solar cell encapsulant sheet formed of a material comprising at least one ethylene resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer, and an ethylene-unsaturated ester copolymer, wherein the volume resistivity value of the material measured at 23° C. is 1×1017 ?·cm or cm more and the average luminous transmittance of the material within a wavelength range of from 400 nm to 1200 nm is 91% or more.
    Type: Application
    Filed: December 21, 2016
    Publication date: June 29, 2017
    Inventor: Hiroaki YODA
  • Publication number: 20170179379
    Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
    Type: Application
    Filed: March 7, 2017
    Publication date: June 22, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: SATOSHI SHIROTORI, Hiroaki Yoda, Yuichi Ohsawa, Yuuzo Kamiguchi, Naoharu Shimomura, Tadaomi Daibou, Tomoaki Inokuchi
  • Publication number: 20170169872
    Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.
    Type: Application
    Filed: September 16, 2016
    Publication date: June 15, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroaki YODA, Naoharu SHIMOMURA, Yuichi OHSAWA, Tadaomi DAIBOU, Tomoaki INOKUCHI, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yuuzo KAMIGUCHI
  • Publication number: 20170141158
    Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.
    Type: Application
    Filed: January 31, 2017
    Publication date: May 18, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tadaomi DAIBOU, Naoharu SHIMOMURA, Yuuzo KAMIGUCHI, Hiroaki YODA, Yuichi OHSAWA, Tomoaki INOKUCHI, Satoshi SHIROTORI
  • Patent number: 9640752
    Abstract: According to one embodiment, a magnetoresistive element includes a recording layer having magnetic anisotropy perpendicular to a film surface and having a variable magnetization direction, a reference layer having magnetic anisotropy perpendicular to a film surface and having an invariable magnetization direction, an intermediate layer provided between the recording layer and the reference layer, and a underlayer containing AlTiN and provided on an opposite side of a surface of the recording layer on which the intermediate layer is provided.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: May 2, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eiji Kitagawa, Tadashi Kai, Hiroaki Yoda
  • Publication number: 20170117454
    Abstract: A magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
    Type: Application
    Filed: January 6, 2017
    Publication date: April 27, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masatoshi YOSHIKAWA, Hiroaki YODA, Shuichi TSUBATA, Kenji NOMA, Tatsuya KISHI, Satoshi SETO, Kazuhiro TOMIOKA
  • Patent number: 9608152
    Abstract: The present invention relates to a solar cell encapsulant sheet comprising at least one ethylene-based resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer and an ethylene-unsaturated ester copolymer, 0.001 parts by mass to 5 parts by mass of at least one compound selected from the group consisting of silicon dioxide and zeolite, and 0.001 parts by mass to 5 parts by mass of a silane coupling agent, relative to 100 parts by mass of the ethylene-based resin respectively.
    Type: Grant
    Filed: June 2, 2014
    Date of Patent: March 28, 2017
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Hiroaki Yoda, Noboru Kondo
  • Publication number: 20170076770
    Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 16, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tadaomi DAIBOU, Naoharu SHIMOMURA, Yuuzo KAMIGUCHI, Hiroaki YODA, Yuichi OHSAWA, Tomoaki INOKUCHI, Satoshi SHIROTORI
  • Publication number: 20170076769
    Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
    Type: Application
    Filed: September 12, 2016
    Publication date: March 16, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Satoshi SHIROTORI, Hiroaki YODA, Yuichi OHSAWA, Yuuzo KAMIGUCHI, Naoharu SHIMOMURA, Tadaomi DAIBOU, Tomoaki INOKUCHI
  • Publication number: 20170077177
    Abstract: A magnetic memory of an embodiment includes: a first nonmagnetic layer including a first and second faces; a first and second wirings disposed on a side of the first face; a third wiring disposed on a side of the second face; a first transistor, one of the source and the drain being connected to the first wiring, the other one being connected to the first nonmagnetic layer; a second transistor, one of source and drain being connected to the second wiring, the other one being connected to the first nonmagnetic layer; a magnetoresistive element disposed between the first nonmagnetic layer and the third wiring, a first terminal of the magnetoresistive element being connected to the first nonmagnetic layer; and a third transistor, one of source and drain of the third transistor being connected to the second terminal, the other one being connected to the third wiring.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 16, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Naoharu SHIMOMURA, Hiroaki YODA, Tadaomi DAIBOU, Yuuzo KAMIGUCHI, Yuichi OHSAWA, Tomoaki INOKUCHI, Satoshi SHIROTORI
  • Patent number: 9570641
    Abstract: Provided is a polymer from which an encapsulant excellent in weather resistance and processability can be obtained when being used for an encapsulant for a solar cell. The polymer that has a main chain comprising repeating units represented by formula (1) and repeating units represented by formula (2) and satisfies requirements (a1), (a2), and (a3), (a1): the ratio of the number of the repeating units represented by formula (2) to the total number of the carbon atoms that constitute the main chain of the polymer is from 3.8% to 7.5%; (a2): the ratio X represented by formula (3) is from 82% to 100%; X=100×A/B??(3) (a3): the polymer has a melting point of 42° C. to 90° C. as measured with a differential scanning calorimeter.
    Type: Grant
    Filed: November 14, 2012
    Date of Patent: February 14, 2017
    Assignee: Sumitomo Chemical Company, Limited
    Inventor: Hiroaki Yoda
  • Patent number: 9570671
    Abstract: According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: February 14, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masatoshi Yoshikawa, Hiroaki Yoda, Shuichi Tsubata, Kenji Noma, Tatsuya Kishi, Satoshi Seto, Kazuhiro Tomioka
  • Publication number: 20160315251
    Abstract: A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO3, SrFeO3, LaAlO3, NdCoO3, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.
    Type: Application
    Filed: June 30, 2016
    Publication date: October 27, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Toshihiko NAGASE, Tadashi KAI, Youngmin EEH, Koji UEDA, Daisuke WATANABE, Kazuya SAWADA, Hiroaki YODA
  • Patent number: 9460829
    Abstract: A resin composition comprising an ethylene-unsaturated ester copolymer and metakaolin, wherein the ethylene-unsaturated ester copolymer comprises structural units derived from ethylene and structural units derived from an unsaturated ester and the content of the structural units derived from the unsaturated ester is 20 to 35% by weight where the total content of the structural units derived from ethylene and the structural units derived from the unsaturated ester is taken as 100% by weight, and the resin composition comprises 0.001 to 5 parts by weight of the metakaolin per 100 parts by weight of the ethylene-unsaturated ester copolymer.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: October 4, 2016
    Assignee: Sumitomo Chemical Company, Limited
    Inventor: Hiroaki Yoda
  • Patent number: 9406871
    Abstract: According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: August 2, 2016
    Assignees: KABUSHIKI KAISHA TOSHIBA, SK HYNIX INC.
    Inventors: Masahiko Nakayama, Masatoshi Yoshikawa, Tadashi Kai, Yutaka Hashimoto, Masaru Toko, Hiroaki Yoda, Jae Geun Oh, Keum Bum Lee, Choon Kun Ryu, Hyung Suk Lee, Sook Joo Kim
  • Patent number: 9385304
    Abstract: According to one embodiment, a magnetic memory is disclosed. The memory includes a conductive layer containing a first metal material, a stacked body above the conductive layer, and including a first magnetization film containing a second metal material, a second magnetization film, and a tunnel barrier layer between the first magnetization film and the second magnetization film, and an insulating layer on a side face of the stacked body, and containing an oxide of the first metal material. The first magnetization film and/or the second magnetization film includes a first region positioned in a central portion, and a second region positioned in an edge portion and containing As, P, Ge, Ga, Sb, In, N, Ar, He, F, Cl, Br, I, Si, B, C, O, Zr, Tb, S, Se, or Ti.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: July 5, 2016
    Assignees: KABUSHIKI KAISHA TOSHIBA, SK HYNIX INC.
    Inventors: Masahiko Nakayama, Tadashi Kai, Masaru Toko, Hiroaki Yoda, Hyung Suk Lee, Jae Geun Oh, Choon Kun Ryu, Min Suk Lee
  • Publication number: 20160163968
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
    Type: Application
    Filed: February 11, 2016
    Publication date: June 9, 2016
    Inventors: Koji UEDA, Toshihiko NAGASE, Kazuya SAWADA, Youngmin EEH, Daisuke WATANABE, Hiroaki YODA
  • Patent number: 9299918
    Abstract: A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: March 29, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Tadaomi Daibou, Minoru Amano, Daisuke Saida, Junichi Ito, Yuichi Ohsawa, Chikayoshi Kamata, Saori Kashiwada, Hiroaki Yoda
  • Patent number: 9293695
    Abstract: According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: March 22, 2016
    Inventors: Koji Ueda, Toshihiko Nagase, Kazuya Sawada, Youngmin Eeh, Daisuke Watanabe, Hiroaki Yoda