Abstract: A memory device for sensing memory cell in a memory array includes at least one first memory cell, a first sensing amplifier, a first multiplexer circuit, a plurality of first reference cells, and a controller. The first sensing amplifier is coupled to the at least one first memory cell. An output terminal of the first multiplexer circuit is coupled to the reference terminal of the first sensing amplifier. Each of the first reference cells is coupled to each input node of the first multiplexer circuit. The controller is coupled to a control terminal of the first multiplexer circuit. The first sensing amplifier comprises an output terminal and a reference terminal. The controller controls the first multiplexer circuit to select one of the first reference cells as a selected reference cell to couple to the reference terminal of the first sensing amplifier when each read operation to the at least one first memory cell is performed.

Abstract: A memory device includes: a memory cell array comprising a plurality of memory cells; a temperature sensor configured to detect a temperature of the memory cell array; a write circuit configured to write data into the plurality of memory cells; and a controller coupled to the temperature sensor and the write circuit, wherein the controller is configured to determine a target write pulse width used by the write circuit based on the detected temperature of the memory device.

Abstract: A memory device includes: a memory cell array comprising a plurality of memory cells, the plurality of memory cells comprising a plurality of data memory cells including a first data memory cell and a plurality of backup memory cells including a first backup memory cell; a storage storing an error table configured to record errors in the plurality of data memory cells, the error table including a plurality of error table entries, each error table entry corresponding to one of the plurality of data memory cell and having an address and a failure count; and a controller configured to replace the first data memory cell with the first backup memory cell based on the error table.

Abstract: A memory system is disclosed. The memory system includes a first memory array, an error correction code circuit, and a monitor circuit. The error correction code circuit is configured to receive data from the first memory array to correct, at least one error bit in the received data. The error correction code circuit is further configured to generate an error determination signal. The monitor circuit is coupled to the error correction code circuit. The monitor circuit is configured to receive the error determination signal and record at least one fail word address associated with the at least one error bit and corresponding failure times in an error table.

Abstract: A memory system is disclosed. The memory system includes a memory array and a controller. The controller is configured to perform a refresh operation to the memory array with a first refresh cycle rate. The first refresh cycle rate is derived from a first refresh time in a lookup table. The lookup table is configured to store refresh times and refresh temperatures corresponding to the refresh times separately.

Abstract: A memory device, such as a MRAM device, includes a plurality of memory macros, where each includes an array of memory cells and a first ECC circuit configured to detect data errors in the respective memory macro. A second ECC circuit that is remote from the plurality of memory macros is communicatively coupled to each of the plurality of memory macros. The second ECC circuit is configured to receive the detected data errors from the first ECC circuits of the plurality of memory macros and correct the data errors.

Abstract: Various one-time-programmable (OTP) memory cells are disclosed. An OTP memory cell includes an additional dopant region that extends at least partially under the gate of a transistor, such as an anti-fuse transistor. The additional dopant region provides an additional current path for a read current. Alternatively, an OTP memory cell includes three transistors; an anti-fuse transistor and two select transistors. The two select transistors can be configured as a cascaded select transistor or as two separate select transistors.

Abstract: A memory device includes a memory array with at least one memory macro, a flag, and a controller. The controller is coupled to the memory array. Each bit of data stored in the at least one memory macro is presented as a first bit type or a second bit type. The controller is configured to select one of a first situation mode and a second situation mode as a selected situation mode according to a first retention time of the first bit type and a second retention time of the second bit type. The first situation mode is that a number of bits with the first bit type in data is larger than a number of bit with the second bit type in data, and the second situation mode is that the number of bit with the first bit type in data is not larger than the number of bits with the second bit type in data. In a write operation of the at least one memory macro, the controller determines that an input data is meet the selected situation mode or not.

Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.

Abstract: A memory device, such as a MRAM device, includes a plurality of memory macros, where each includes an array of memory cells and a first ECC circuit configured to detect data errors in the respective memory macro. A second ECC circuit that is remote from the plurality of memory macros is communicatively coupled to each of the plurality of memory macros. The second ECC circuit is configured to receive the detected data errors from the first ECC circuits of the plurality of memory macros and correct the data errors.

Abstract: Disclosed herein is an integrated circuit including multiple magnetic tunneling junction (MTJ) cells coupled to a static random access memory (SRAM). In one aspect, the integrated circuit includes a SRAM having a first port and a second port, and a set of pass transistors coupled to the first port of the SRAM. In one aspect, the integrated circuit includes a set of MTJ cells, where each of the set of MTJ cells is coupled between a select line and a corresponding one of the set of pass transistors.

Abstract: Various one-time-programmable (OTP) memory cells are disclosed. An OTP memory cell includes an additional dopant region that extends at least partially under the gate of a transistor, such as an anti-fuse transistor. The additional dopant region provides an additional current path for a read current. Alternatively, an OTP memory cell includes three transistors; an anti-fuse transistor and two select transistors. The two select transistors can be configured as a cascaded select transistor or as two separate select transistors.

Abstract: A testing device for memory includes a memory array and a test apparatus. The test apparatus includes a controller and a pattern generator. The pattern generator generates a background data, a first pattern data, and a second pattern data. The controller sets up the background data to a to-be-tested memory sub-array of the memory sub-arrays, performs a first memory test operation with the to-be-tested memory sub-array according to the first pattern data for detecting an occurrence of a hardware failure of the to-be-tested memory sub-array is occurred during the first memory test operation. The controller performs a second memory test operation with the to-be-tested memory sub-array according to the second pattern data for detecting the occurrence of the hardware failure of the to-be-tested memory sub-array during the second memory test operation in response to the hardware failure of the to-be-tested memory sub-array is not occurred during the first memory test operation.

Abstract: A static random access memory (SRAM) circuit can group the column bit lines in a memory array into subsets of bit lines, and a y-address signal input is provided for each subset of bit lines. Additionally or alternatively, each row in the array of memory cells is operably connected to multiple word lines.

Abstract: A testing device for memory includes a memory array and a test apparatus. The test apparatus includes a controller and a pattern generator. The pattern generator generates a background data, a first pattern data, and a second pattern data. The controller sets up the background data to a to-be-tested memory sub-array of the memory sub-arrays, performs a first memory test operation with the to-be-tested memory sub-array according to the first pattern data for detecting whether the hardware failure of the to-be-tested memory sub-array is occurred during the first memory test operation. The controller performs a second memory test operation with the to-be-tested memory sub-array according to the second pattern data for detecting whether the hardware failure of the to-be-tested memory sub-array is occurred during the second memory test operation in response to the hardware failure of the to-be-tested memory sub-array is not occurred during the first memory test operation.

Abstract: The present invention provides a column filler for liquid chromatography that has a great adsorption capacity, adjustable adsorption selectivity, and high shape retainability and therefore is usable for measurement of various substances and capable of achieving excellent separation performance and a high filling rate in a column when used as a column filler for liquid chromatography. Provided is a column filler for liquid chromatography including carbon-coated porous particles, the carbon-coated porous particles including porous particles each having a coating layer containing an amorphous carbon on a surface.

Abstract: A memory device includes a memory array with at least one memory macro, a flag, and a controller. The controller is coupled to the memory array. Each bit of data stored in the at least one memory macro is presented as a first bit type or a second bit type. The controller is configured to select one of a first situation mode and a second situation mode as a selected situation mode according to a first retention time of the first bit type and a second retention time of the second bit type. The first situation mode is that a number of bits with the first bit type in data is larger than a number of bit with the second bit type in data, and the second situation mode is that the number of bit with the first bit type in data is not larger than the number of bits with the second bit type in data. In a write operation of the at least one memory macro, the controller determines that an input data is meet the selected situation mode or not.

Abstract: Various one-time-programmable (OTP) memory cells are disclosed. An OTP memory cell includes an additional dopant region that extends at least partially under the gate of a transistor, such as an anti-fuse transistor. The additional dopant region provides an additional current path for a read current. Alternatively, an OTP memory cell includes three transistors; an anti-fuse transistor and two select transistors. The two select transistors can be configured as a cascaded select transistor or as two separate select transistors.

Abstract: A memory device including a memory array with a plurality of memory macros, a power supplying circuit, and a controller is provided. The power supplying circuit is coupled to the memory array. The controller is coupled to the memory array. The power supplying circuit is configured to provide power to perform write operations to a number of the memory macros at the same time. The number of the memory macros for the write operations performed at the same time is not higher than a maximum number of the memory macros. The controller obtains the maximum number of the memory macros for the write operations performed at the same time by the power supplying circuit. The controller re-arranges a schedule for a sequence of the write operations of the memory macros to generate a re-arranged schedule. The maximum number is taken as a threshold value. In the re-arranged schedule, a number of part of the memory macros for the write operations performed at the same time is equal to or less then the threshold value.

Abstract: A memory device includes: a memory cell array comprising a plurality of memory cells, the plurality of memory cells comprising a plurality of data memory cells including a first data memory cell and a plurality of backup memory cells including a first backup memory cell; a storage storing an error table configured to record errors in the plurality of data memory cells, the error table including a plurality of error table entries, each error table entry corresponding to one of the plurality of data memory cell and having an address and a failure count; and a controller configured to replace the first data memory cell with the first backup memory cell based on the error table.