Abstract: A power line communication apparatus includes a drive block including an actuator control circuit and a drive circuit and a communication block. The actuator control circuit generates a control pulse for controlling an actuator, and controls a transition timing of the control pulse during an operation period set within a communication cycle by a communication clock. The drive circuit controls a driving current of the actuator supplied from a DC power source through a power line based on the control pulse in which the transition timing is controlled. The communication block generates the communication clock, and modulates a current flowing through the power line in response to data to be transmitted during a signal transmission period different from the operation period, set within the communication cycle.

Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell or a sodium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LiFeaMnbMcPO4, formula (B): LiFeaMnbMcSiO4, or formula (C): NaFegMnhQiPO4; and carbon derived from a cellulose nanofiber supported thereon.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LifeaMnbMcPO4; and carbon derived from a cellulose nanofiber supported thereon.

Abstract: There is provided a technique that includes forming a first film including a ring-shaped structure composed of silicon and carbon and containing nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, and performing post-treatment by supplying an oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved. The cycle includes non-simultaneously performing supplying a precursor including the ring-shaped structure and containing halogen to the substrate with the recess formed in the surface, and supplying a nitriding agent to the substrate, wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved.

Abstract: A power line communication apparatus includes a drive block including an actuator control circuit and a drive circuit and a communication block. The actuator control circuit generates a control pulse for controlling an actuator, and controls a transition timing of the control pulse during an operation period set within a communication cycle by a communication clock. The drive circuit controls a driving current of the actuator supplied from a DC power source through a power line based on the control pulse in which the transition timing is controlled. The communication block generates the communication clock, and modulates a current flowing through the power line in response to data to be transmitted during a signal transmission period different from the operation period, set within the communication cycle.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate that includes a surface exposing a first film containing silicon, oxygen, carbon and nitrogen and having an oxygen atom concentration higher than a silicon atom concentration, which is higher than a carbon atom concentration, which is equal to or higher than a nitrogen atom concentration; and changing a composition of a surface of the first film so that the nitrogen atom concentration becomes higher than the carbon atom concentration on the surface of the first film, by supplying a plasma-excited nitrogen-containing gas to the surface of the first film.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, columnar portions, and first and second interconnection portions. The stacked body includes insulating layers and electrode layers alternately stacked one layer by one layer on the substrate. The columnar portions are provided between the first and second interconnection portions and include a first row having a first columnar portion and a second row having a second columnar portion, the first columnar portion being positioned closest to the first interconnection portion, and the second columnar portion being positioned closest to the second interconnection portion. A distance between the first interconnection portion and the first columnar portion is smaller than a distance between the second interconnection portion and the second columnar portion, and the distance between the second interconnection portion and the second columnar portion is greater than 20 nanometers.

Abstract: A semiconductor memory device includes a plurality of first electrode layers stacked in a first direction; a semiconductor layer extending in the first direction in the plurality of first electrode layers; a first insulating layer extending in the first direction along the semiconductor layer between the semiconductor layer and each of the plurality of first electrode layers; a second insulating layer covering the periphery of the plurality of first electrode layers; a resistive body provided on the second insulating layer; and a third insulating layer provided between the resistive body and the second insulating layer, the third insulating layer including the same material as the material of the first insulating layer.

Abstract: A semiconductor memory device according to an embodiment includes: a pair of insulating members separated from each other, the pair of insulating members extending in a first direction; a plurality of electrode films and a plurality of inter-layer insulating films disposed between the pair of insulating members and stacked alternately along a second direction, the second direction intersecting the first direction; a plurality of semiconductor pillars extending in the second direction and piercing the plurality of electrode films and the plurality of inter-layer insulating films; and a charge storage film disposed between one of the semiconductor pillars and one of the electrode films. An end portion on one of the insulating members side of a first electrode film of the electrode films is thicker than a central portion of the first electrode film between the pair of insulating members.

Abstract: The present invention provides a positive electrode active substance for a secondary cell, the positive electrode active substance capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The present invention also provides a method for producing the positive electrode active substance for a secondary cell. That is, the present invention is a positive electrode active substance for a secondary cell, in which a water-insoluble electrically conductive carbon material and carbon obtained by carbonizing a water-soluble carbon material are supported on an oxide containing at least iron or manganese, the oxide represented by formula (A) LiFeaMnbMcPO4, formula (B) Li2FedMneNfSiO4, or formula (C) NaFegMnhQiPO4.

Abstract: The present invention provides a positive electrode active substance for a secondary cell, the positive electrode active substance capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The present invention also provides a method for producing the positive electrode active substance for a secondary cell. That is, the present invention is a positive electrode active substance for a secondary cell, in which one or two selected from the group consisting of a water-insoluble electrically conductive carbon material and carbon obtained by carbonizing a water-soluble carbon material, and 0.1 to 5 mass % of a metal fluoride are supported on a compound containing at least iron or manganese, the compound represented by formula (A) LiFenMnbM1cPO4, formula (B) Li2FedMneM2fSiO4, or formula (C) NaFegMnhQiPO4.

Abstract: A positive electrode active substance for a secondary cell, where the positive electrode active substance is capable of suppressing adsorption of water effectively in order to obtain a high-performance lithium ion secondary cell or sodium ion secondary cell. The positive electrode active substance contains 0.3 to 5 mass % of graphite, 0.1 to 4 mass % of carbon obtained by carbonizing a water-soluble carbon material, or 0.1 to 5 mass % of a metal fluoride is supported on a composite containing a compound which contains at least iron or manganese, where the compound is represented by formula (A) LiFeaMnbMcPO4, formula (B) Li2FedMneNfSiO4, or formula (C) NaFegMnhQiPO4, and carbon obtained by carbonizing a cellulose nanofiber.

Abstract: The purpose of the present invention is to provide the technique of a method for preparing a highly precise single-stranded DNA that makes it possible to obtain accurate results even by a simple test in a clinical sites or the like. The invention provides a highly precise single-stranded DNA product that can be utilized even in more simple and rapid genetic analyses by taking as the detection sample a single-stranded nucleotide product amplified by ligation, preferably by cycling ligation reaction, without PCR or LCR amplification.

Abstract: The purpose of the present invention is to provide a DNA detection technique by which testing can be simply and accurately performed at clinical sites or the like. The present invention provides a gene analysis method which employs, as a detection sample, a single strand nucleotide product that is amplified by ligation, and which can be performed visually in a more simple and rapid way.

Abstract: The high-speed and high-quality reception operation of a transimpedance amplifier of an optical communication module and a router including the same can be achieved. A preamplifier performs current/voltage conversion with respect to intersymbol interference due to bandwidth shortage of a laser diode. A threshold control circuit which generates positive and negative threshold voltages with respect to a center potential of an output signal, latch circuits, and a selector circuit are provided to the output of the preamplifier. An NRZ signal is received as a duobinary signal based on the sign determination result of the previous bit. The determination error rate of the latch circuits can thus be improved.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.