Abstract: The high-speed and high-quality reception operation of a transimpedance amplifier of an optical communication module and a router including the same can be achieved. A preamplifier performs current/voltage conversion with respect to intersymbol interference due to bandwidth shortage of a laser diode. A threshold control circuit which generates positive and negative threshold voltages with respect to a center potential of an output signal, latch circuits, and a selector circuit are provided to the output of the preamplifier. An NRZ signal is received as a duobinary signal based on the sign determination result of the previous bit. The determination error rate of the latch circuits can thus be improved.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: The present invention provides a positive-electrode active material for a lithium-ion secondary cell or a sodium-ion secondary cell, which can effectively exhibit more excellent charge/discharge characteristics; and a method for manufacturing the positive-electrode active material. Namely, the present invention relates to a positive-electrode active material for a secondary cell comprising an oxide represented by formula (A): LiFeaMnbMcPO4, formula (B): LiFeaMnbMcSiO4, or formula (C): NaFegMnhQiPO4; and carbon derived from a cellulose nanofiber supported thereon.

Abstract: A semiconductor device includes: a semiconductor substrate, a first portion and a second portion of an upper layer portion of the semiconductor substrate being conductive; an insulating member electrically isolating the first portion from the second portion; a first stacked body provided in a region directly above the second portion, the first stacked body including first insulating films and electrode films stacked alternately; a semiconductor pillar provided inside the first stacked body and extending in a stacking direction; a charge storage film provided between the semiconductor pillar and the electrode films; a second stacked body provided in a region directly above the first portion, the second stacked body including second insulating films and third insulating films stacked alternately; and two first conductive pillars provided inside the second stacked body extending in the stacking direction, lower ends thereof being connected to the first portion.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: A semiconductor memory device includes a plurality of first electrode layers stacked in a first direction; a semiconductor layer extending in the first direction in the plurality of first electrode layers; a first insulating layer extending in the first direction along the semiconductor layer between the semiconductor layer and each of the plurality of first electrode layers; a second insulating layer covering the periphery of the plurality of first electrode layers; a resistive body provided on the second insulating layer; and a third insulating layer provided between the resistive body and the second insulating layer, the third insulating layer including the same material as the material of the first insulating layer.

Abstract: According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, columnar portions, and first and second interconnection portions. The stacked body includes insulating layers and electrode layers alternately stacked one layer by one layer on the substrate. The columnar portions are provided between the first and second interconnection portions and include a first row having a first columnar portion and a second row having a second columnar portion, the first columnar portion being positioned closest to the first interconnection portion, and the second columnar portion being positioned closest to the second interconnection portion. A distance between the first interconnection portion and the first columnar portion is smaller than a distance between the second interconnection portion and the second columnar portion, and the distance between the second interconnection portion and the second columnar portion is greater than 20 nanometers.

Abstract: A semiconductor memory device includes a plurality of first electrode layers stacked; a second electrode layer provided on the first electrode layers; a third electrode layer arranged with the second electrode layers on the first electrode layers; a first insulating layer including a first layer provided between the second electrode layer and the third electrode layer, a second layer provided between the second electrode layer and the first layer, and a third layer provided between the third electrode layer and the first layer; a plurality of semiconductor layers extending through the first electrode layers in a stacked direction thereof, and disposed in an arrayed arrangement; and a charge storage portion positioned between one of the first electrode layers and one of the semiconductor layers.

Abstract: A system and method for selecting a path according to a plurality of selection conditions are disclosed, where a vehicle traveling history data stored in the plurality type of driving data recorder (DDR) databases established previously are analyzed, and then a plurality type of DDR databases are screened out by further referring to a plurality of type ratios provided by the user are screened out, and then a desired path is selected.

Abstract: A semiconductor memory device includes a first stacked body, a semiconductor pillar extending the first direction and piercing the first stacked body, and a memory film disposed between the semiconductor pillar and the electrode film. The first stacked body includes a plurality of electrode films and a plurality of inter-layer insulating films stacked alternately along the first direction. The plurality of electrode films and the plurality of inter-layer insulating films extend in a second direction intersecting the first direction. Each of the electrode films includes a central portion and a peripheral portion. The central portion is disposed in a central part of the electrode film in a third direction, and includes silicon. The third direction intersects the first direction and the second direction. The peripheral portion is disposed on two sides of the central portion in the third direction, extends in the second direction and includes a metal.

Abstract: The present invention aims to provide a viscosity index improver excellent in shear stability and having a low HTHS viscosity and a high viscosity index. The viscosity index improver of the present invention contains a (co)polymer (A) containing a polyolefin-based monomer as an essential monomer unit, and a base oil, wherein the absolute value of difference in solubility parameter between the (co)polymer (A) and the base oil is 0.8 to 2.0 (cal/cm3)1/2.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: According to one embodiment, a non-volatile memory device includes electrodes, an interlayer insulating film, at least one semiconductor layer, conductive layers, first and second insulating films. The electrodes are arranged in a first direction. The interlayer insulating film is provided between the electrodes. The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and the semiconductor layer. The second insulating film is provided between each of the electrodes and the conductive layers, and extends between each of the electrodes and the interlayer insulating film adjacent to the each of the electrodes. A width of the conductive layers in the first direction is narrower than that of the second insulating film.

Abstract: A semiconductor device includes: a semiconductor substrate, a first portion and a second portion of an upper layer portion of the semiconductor substrate being conductive; an insulating member electrically isolating the first portion from the second portion; a first stacked body provided in a region directly above the second portion, the first stacked body including first insulating films and electrode films stacked alternately; a semiconductor pillar provided inside the first stacked body and extending in a stacking direction; a charge storage film provided between the semiconductor pillar and the electrode films; a second stacked body provided in a region directly above the first portion, the second stacked body including second insulating films and third insulating films stacked alternately; and two first conductive pillars provided inside the second stacked body extending in the stacking direction, lower ends thereof being connected to the first portion.

Abstract: A semiconductor memory device includes a first stacked body, a semiconductor pillar extending the first direction and piercing the first stacked body, and a memory film disposed between the semiconductor pillar and the electrode film. The first stacked body includes a plurality of electrode films and a plurality of inter-layer insulating films stacked alternately along the first direction. The plurality of electrode films and the plurality of inter-layer insulating films extend in a second direction intersecting the first direction. Each of the electrode films includes a central portion and a peripheral portion. The central portion is disposed in a central part of the electrode film in a third direction, and includes silicon. The third direction intersects the first direction and the second direction. The peripheral portion is disposed on two sides of the central portion in the third direction, extends in the second direction and includes a metal.

Abstract: A semiconductor memory device according to an embodiment includes: a pair of insulating members separated from each other, the pair of insulating members extending in a first direction; a plurality of electrode films and a plurality of inter-layer insulating films disposed between the pair of insulating members and stacked alternately along a second direction, the second direction intersecting the first direction; a plurality of semiconductor pillars extending in the second direction and piercing the plurality of electrode films and the plurality of inter-layer insulating films; and a charge storage film disposed between one of the semiconductor pillars and one of the electrode films. An end portion on one of the insulating members side of a first electrode film of the electrode films is thicker than a central portion of the first electrode film between the pair of insulating members.

Abstract: The present invention aims to provide a viscosity index improver excellent in shear stability and having a low HTHS viscosity and a high viscosity index. The viscosity index improver of the present invention contains a (co)polymer (A) containing a polyolefin-based monomer as an essential monomer unit, and a base oil, wherein the absolute value of difference in solubility parameter between the (co)polymer (A) and the base oil is 0.8 to 2.0 (cal/cm3)1/2.

Abstract: A downsized, highly reliable optical apparatus is stably and easily manufactured with high productivity. The optical apparatus includes: an optical device having a principal surface including an optical unit; a transparent member disposed facing the optical unit; a semiconductor device disposed above a back surface of the optical device and electrically connected to the optical device, the back surface being opposite the principal surface; and a resin member provided in a region adjacent to the optical device and the semiconductor device above a surface of the transparent member, the surface of the transparent member facing the optical device.

Abstract: An imaging device includes a solid-state image element and an encapsulation section. The solid-state image element has an imaging region. In the imaging region, the solid-state image element receives light which is transmitted through an imaging target placed on the imaging region. The encapsulation section is placed on a surface, on which the imaging region is formed, so as to enclose the imaging target. The solid-state image element is peelable from the encapsulation section to enable the solid-state image element to be reused.

Abstract: A first chip including electrodes is mounted above an expanded semiconductor chip formed by providing an expanded portion at an outer edge of a second chip including chips. The electrodes of the first chip are electrically connected to the electrodes of the second chip by conductive members. A re-distribution structure is formed from a top of the first chip outside a region for disposing the conductive members along a top of the expanded portion. Connection terminals are provided above the expanded portion, and electrically connected to ones of the electrodes of the first chip via the re-distribution structure.