Patents by Inventor Hiromasa Noda
Hiromasa Noda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6498762Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: GrantFiled: January 9, 2002Date of Patent: December 24, 2002Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Patent number: 6496403Abstract: Disclosed a semiconductor memory device in which an access to a memory cell is designated according to a command, and a common data terminal is used as an input terminal to which a write signal to the memory cell is input and an output terminal from which a read signal from the memory cell is output. The semiconductor memory device includes: a first input circuit having input capacitance corresponding to the input terminal to which the command is input; and a second input circuit having input capacitance corresponding to the data terminal. A mask signal for checking the write signal input from the data terminal is input by either the first or second input circuit by a bonding option technique.Type: GrantFiled: July 18, 2001Date of Patent: December 17, 2002Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Sadayuki Okuma, Hiroshi Ichikawa, Hiroki Miyashita, Yasushi Takahashi
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Patent number: 6473354Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: GrantFiled: January 9, 2002Date of Patent: October 29, 2002Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Patent number: 6473358Abstract: A semiconductor memory device has a column address decoder which includes first and second pre-decoders corresponding to high-order and low-order addresses, respectively, a shift register for using the output signal of the second pre-decoder as an initial value, and an output circuit for selecting either the output signal of the second pre-decoder or the output signal of the shift register in accordance with an action mode. The select signal is formed by the output signal of the first pre-decoder and the output signal through the output circuit. The shift register includes a first shift register for an even address and a second shift register for an odd address and forms two sets of continuous select signals of the bit lines, as composed of a sequential action and an interleave action, on the basis of the initial value by combining its up and down shifting actions.Type: GrantFiled: March 15, 2002Date of Patent: October 29, 2002Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Youji Idei, Osamu Nagashima, Tetsuo Ado
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Patent number: 6424586Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: GrantFiled: January 9, 2002Date of Patent: July 23, 2002Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Publication number: 20020093870Abstract: A semiconductor memory device has a column address decoder which includes first and second pre-decoders corresponding to high-order and low-order addresses, respectively, a shift register for using the output signal of the second pre-decoder as an initial value, and an output circuit for selecting either the output signal of the second pre-decoder or the output signal of the shift register in accordance with an action mode. The select signal is formed by the output signal of the first pre-decoder and the output signal through the output circuit. The shift register includes a first shift register for an even address and a second shift register for an odd address and forms two sets of continuous select signals of the bit lines, as composed of a sequential action and an interleave action, on the basis of the initial value by combining its up and down shifting actions.Type: ApplicationFiled: March 15, 2002Publication date: July 18, 2002Inventors: Hiromasa Noda, Youji Idei, Osamu Nagashima, Tetsuo Ado
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Patent number: 6414530Abstract: A lattice-like delay circuit is configured wherein a plurality of logic gate circuits which are respectively provided with impedance elements for respectively coupling two input signals inputted to first and second input terminals and respectively form output signals obtained by inverting the input signals inputted to the first and second signals, are used so as to be disposed in lattice form in a first signal transfer direction and a second signal transfer direction. Input clock signals are successively delayed in the first signal transfer direction and thereafter inputted to the respective logic gate circuits extending from the first to the last as seen in the first signal transfer direction. Output signals are obtained from output terminals of logic gate circuits placed in at least a plural-numbered stage as seen in the second signal transfer direction and arranged in the first signal transfer direction.Type: GrantFiled: April 11, 2001Date of Patent: July 2, 2002Assignees: Hitachi, Ltd., Hitachi ULSI Systems Co., Ltd.Inventors: Hiromasa Noda, Masakazu Aoki, Hitoshi Tanaka, Hideyuki Aoki
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Patent number: 6396761Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: GrantFiled: June 7, 2001Date of Patent: May 28, 2002Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Publication number: 20020060944Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: ApplicationFiled: January 9, 2002Publication date: May 23, 2002Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Publication number: 20020057620Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: ApplicationFiled: January 9, 2002Publication date: May 16, 2002Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Publication number: 20020057619Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an, operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: ApplicationFiled: January 9, 2002Publication date: May 16, 2002Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Patent number: 6385100Abstract: A semiconductor memory device has a column address decoder which includes first and second pre-decoders corresponding to high-order and low-order addresses, respectively, a shift register for using the output signal of the second pre-decoder as an initial value, and an output circuit for selecting either the output signal of the second pre-decoder or the output signal of the shift register in accordance with an action mode. The select signal is formed by the output signal of the first pre-decoder and the output signal through the output circuit. The shift register includes a first shift register for an even address and a second shift register for an odd address and forms two sets of continuous select signals of the bit lines, as composed of a sequential action and an interleave action, on the basis of the initial value by combining its up and down shifting actions.Type: GrantFiled: February 22, 2001Date of Patent: May 7, 2002Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Youji Idei, Osamu Nagashima, Tetsuo Ado
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Publication number: 20020041531Abstract: In a semiconductor integrated circuit device having a first circuit block operating on a power supply voltage supplied through an external terminal and a second circuit block operating on an internal voltage generated by a power supply circuit, a voltage having an absolute value greater than that of the internal voltage is generated by a charge pump circuit; variable impedance means is provided between the output voltage and the internal voltage; and a reference voltage and the internal voltage are compared by a differential amplifier circuit operating on the output voltage generated by the charge pump circuit and the variable impedance means is controlled such that those voltages agree with each other.Type: ApplicationFiled: December 12, 2001Publication date: April 11, 2002Inventors: Hitoshi Tanaka, Masakazu Aoki, Shinichiro Kimura, Hiromasa Noda, Tomonori Sekiguchi
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Publication number: 20020012285Abstract: Disclosed a semiconductor memory device in which an access to a memory cell is designated according to a command, and a common data terminal is used as an input terminal to which a write signal to the memory cell is input and an output terminal from which a read signal from the memory cell is output. The semiconductor memory device includes: a first input circuit having input capacitance corresponding to the input terminal to which the command is input; and a second input circuit having input capacitance corresponding to the data terminal. A mask signal for checking the write signal input from the data terminal is input by either the first or second input circuit by a bonding option technique.Type: ApplicationFiled: July 18, 2001Publication date: January 31, 2002Applicant: Hitachi, Ltd.Inventors: Hiromasa Noda, Sadayuki Okuma, Hiroshi Ichikawa, Hiroki Miyashita, Yasushi Takahashi
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Patent number: 6335893Abstract: In a semiconductor integrated circuit device having a first circuit block operating on a power supply voltage supplied through an external terminal and a second circuit block operating on an internal voltage generated by a power supply circuit, a voltage having an absolute value greater than that of the internal voltage is generated by a charge pump circuit; variable impedance means is provided between the output voltage and the internal voltage; and a reference voltage and the internal voltage are compared by a differential amplifier circuit operating on the output voltage generated by the charge pump circuit and the variable impedance means is controlled such that those voltages agree with each other.Type: GrantFiled: December 16, 1999Date of Patent: January 1, 2002Assignee: Hitachi, Ltd.Inventors: Hitoshi Tanaka, Masakazu Aoki, Shinichiro Kimura, Hiromasa Noda, Tomonori Sekiguchi
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Publication number: 20010026478Abstract: A semiconductor memory device comprising: a memory array including a plurality of word lines and a plurality of bit lines; and a column address decoder for selecting a predetermined bit line from the plurality of bit lines. The column address decoder includes: first and second pre-decoders corresponding to high-order and low-order addresses, respectively; a shift register for using the output signal of the second pre-decoder as an initial value; and an output circuit for selecting either the output signal of the second pre-decoder or the output signal of the shift register in accordance with an action mode. The select signal is formed by the output signal of the first pre-decoder and the output signal through the output circuit.Type: ApplicationFiled: February 22, 2001Publication date: October 4, 2001Inventors: Hiromasa Noda, Youji Idei, Osamu Nagashima, Tetsuo Ado
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Publication number: 20010026495Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel form between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: ApplicationFiled: June 7, 2001Publication date: October 4, 2001Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Publication number: 20010015666Abstract: A lattice-like delay circuit is configured wherein a plurality of logic gate circuits which are respectively provided with impedance elements for respectively coupling two input signals inputted to first and second input terminals and respectively form output signals obtained by inverting the input signals inputted to the first and second signals, are used so as to be disposed in lattice form in a first signal transfer direction and a second signal transfer direction. Input clock signals are successively delayed in the first signal transfer direction and thereafter inputted to the respective logic gate circuits extending from the first to the last as seen in the first signal transfer direction. Output signals are obtained from output terminals of logic gate circuits placed in at least a plural-numbered stage as seen in the second signal transfer direction and arranged in the first signal transfer direction.Type: ApplicationFiled: April 11, 2001Publication date: August 23, 2001Inventors: Hiromasa Noda, Masakazu Aoki, Hitoshi Tanaka, Hideyuki Aoki
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Patent number: 6275440Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon reaching its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: GrantFiled: December 5, 2000Date of Patent: August 14, 2001Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata
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Patent number: 6240035Abstract: A dynamic RAM is divided into an input circuit block responsive to an input signal supplied from an external terminal, inclusive of an operation start signal, an internal circuit block activated in response to the signal inputted from the input circuit block, and an output circuit block for outputting a signal outputted from the internal circuit block to an external terminal. A plurality of switch MOSFETs are provided in parallel between a power line for applying an operating voltage supplied from an external terminal and an internal power line for a first circuit portion in the internal circuit block, which does not need a storage operation upon reaching its non-operating state. Further, the switch MOSFETs are stepwise turned on in response to controls signals produced by delaying a start signal supplied through the input circuit block in turn, so as to perform the supply of each operating voltage.Type: GrantFiled: April 30, 1999Date of Patent: May 29, 2001Assignee: Hitachi, Ltd.Inventors: Hiromasa Noda, Masakazu Aoki, Youji Idei, Kazuhiko Kajigaya, Osamu Nagashima, Kiyoo Itoh, Masashi Horiguchi, Takeshi Sakata