Abstract: According to the present invention, a resin compound for optical material, comprising (a) an episulfide compound represented by a specific structural formula, (b) a xylylenedithiol compound and (c) a xylylenediisocyanate compound can be provided. In a preferable embodiment of the present invention, a resin compound for optical material having superb optical properties, a high density and a high thermal resistance can be provided. Also according to the present invention, an optical material obtained by curing the above-described resin compound can be provided.

Abstract: In the present invention, an episulfide compound having, in one molecule, at least one epithio structure represented by the following Formula 2: wherein R5 is C1-C10 hydrocarbylene or single bond, R6, R7 and R8 are each independently C1-C10 hydrocarbyl or hydrogen, Y is O, S, Se or Te, p is an integer from 1 to 5 and q is an integer from 0 to 5, is polymerized in the presence of a halide of a 13-16 group element of the long periodic table and/or a polymerization regulator represented by the following Formula 1: wherein R1, R2 and R3 are each C1-C10 hydrocarbyl or hydrogen, R4 is C1-C10 hydrocarbylene or single bond, X is F, Cl, Br, I, As, SH, OH, C1-C10 alkoxyl, C1-C10 alkylthio, or C1-C10 mercaptoalkylthio, and m is an integer from 1 to 5, to produce a cured resin suitable as an optical material. By using the polymerization regulator, the polymerization rate of the episulfide compound can be suitably regulated to obtain a cured resin with less defect.

Abstract: A magnetic memory device and a method of manufacturing the same, which are advantageous not only in that both the improvement of storage sensitivity and the reduction of power consumption can be achieved, but also in that a buried wiring having low resistance and high reliability can be formed in reduced time in a stable manner. Soft magnetic material layers forming the cladding structure of a word line and a bit line constituting an MRAM are formed by electroless plating, and the soft magnetic material layers are formed around main wirings (especially copper) of the word line and bit line so that the soft magnetic material layers individually have a uniform, satisfactory thickness, and further they are deposited with improved uniformity on the surface with which the electroless plating solution is in contact, and therefore the uniformity of cladding is improved at not only the bottom surface but also the sidewall of a wiring trench.

Abstract: Episulfide compounds useful as starting materials of optical materials are stably stored for a long period of time at a temperature ranging from their solidifying points to 20° C., preventing the production or precipitation of polymers and the yellowing.

Abstract: A cured matter obtained by polymerizing and curing a polymerizable composition comprising a compound having at least one episulfide in a molecule is reduced in an odor by adding a perfume to the polymerizable composition comprising the compound having at least one episulfide in a molecule. A cloudiness of the lens is removed by raising a purity of sulfur to 98% or more. A reduction in a chlorine content of the sulfur compound described above to 0.1% by weight or less elevates an oxidation resistance and a light fastness of the high refractive index optical material and improves a color tone thereof. An optical product having a high refractive index and a high-degree transparency is provided by subjecting the composition in advance to deaerating treatment at 0 to 100° C. for one minute to 24 hours under a reduced pressure of 0.001 to 50 torr.

Abstract: In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and yield. Method for manufacturing a magnetic memory device, comprising the steps of: forming a word line; forming a magnetoresistance effect memory element comprising a tunnel insulating layer disposed between a ferromagnetic material and being electrically insulated from the word line; forming an insulating film for covering the memory element; and forming a bit line so that it is buried in the insulating film wherein the bit line is electrically connected to the memory element and spatially crosses the word line through the memory element disposed therebetween, wherein the method has steps of removing the insulating film on the bit line side to expose the bit line and forming a soft magnetic material layer selectively only on the bit line surface.

Abstract: Electric conductivity is enhanced without causing coagulation or precipitation of polishing abrasive grains. In addition, good planarization is realized without inducing defects in a metallic film or a wiring which are to be polished. In an electropolishing method for planarizing the surface of a metallic film to be polished by moving a polishing pad (15) in sliding contact with the metallic film surface while oxidizing the metallic film surface through an electrolytic action in an electropolishing liquid E, the electropolishing liquid E contains at least polishing abrasive grains and an electrolyte for maintaining an electrostatically charged state of the polishing abrasive grains. Since the electropolishing liquid having a high electric conductivity is used, it is possible to obtain a high electrolyzing current and to enlarge the distance between electrodes.

Abstract: In the present invention, an episulfide compound having, in one molecule, at least one epithio structure represented by the following Formula 2: wherein R5 is C1–C10 hydrocarbylene or single bond, R6, R7 and R8 are each independently C1–C10 hydrocarbyl or hydrogen, Y is O, S, Se or Te, p is an integer from 1 to 5 and q is an integer from 0 to 5, is polymerized in the presence of a halide of a 13–16 group element of the long periodic table and/or a polymerization regulator represented by the following Formula 1: wherein R1, R2 and R3 are each C1–C10 hydocarbyl or hydrogen, R4 is C1–C10 hydrocarbylene or single bond, X is F, Cl, Br, I, As, SH, OH, C1–C10 alkoxyl, C1–C10 alkylthio, or C1–C10 mercaptoalkythio, and m is an integer from 1 to 5, to produce a cured resin suitable as an optical material. By using the polymerization regulator, the polymerization rate of the episulfide compound can be suitably regulated to obtain a cured resin with less defect.

Abstract: A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.

Abstract: The present invention relates to a composition for optical materials, comprising (a) a compound having in one molecule at least one structure represented by the following Formula 1: wherein R1 is a single bond or a C1-10 hydrocarbon group, each of R2, R3 and R4 is a C1-10 hydrocarbon group or hydrogen, Y is O, 5, Se or Te, m is 1 to 5, and n is 0 to 5; (b) a compound having in one molecule at least one isocyanate group and/or at least one isothiocyanate group; (c) a compound having in one molecule at least one mercapto group; and (d) an inorganic compound having sulfur atom and/or selenium atom, and also relates to an optical material produced by polymerization curing the composition, a production method thereof, and an optical lens comprising the optical material. The present invention provides a high refractive, high Abbe's number optical material having an improved impact resistance.

Abstract: In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and yield. Method for manufacturing a magnetic memory device, comprising the steps of: forming a word line; forming a magnetoresistance effect memory element comprising a tunnel insulating layer disposed between a ferromagnetic material and being electrically insulated from the word line; forming an insulating film for covering the memory element; and forming a bit line so that it is buried in the insulating film wherein the bit line is electrically connected to the memory element and spatially crosses the word line through the memory element disposed therebetween, wherein the method has steps of removing the insulating film on the bit line side to expose the bit line and forming a soft magnetic material layer selectively only on the bit line surface.

Abstract: In bit line cladding structure formation, stability and margin of the process are secured and further shrinking is achieved, and the magnetic memory device is improved in speed, reliability and yield. Method for manufacturing a magnetic memory device, comprising the steps of: forming a word line; forming a magnetoresistance effect memory element comprising a tunnel insulating layer disposed between a ferromagnetic material and being electrically insulated from the word line; forming an insulating film for covering the memory element; and forming a bit line so that it is buried in the insulating film wherein the bit line is electrically connected to the memory element and spatially crosses the word line through the memory element disposed therebetween, wherein the method has steps of removing the insulating film on the bit line side to expose the bit line and forming a soft magnetic material layer selectively only on the bit line surface.

Abstract: An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

Abstract: A method of producing a semiconductor device capable of suppressing damages by corrosion on wiring in a catalyst process performed in electroless plating processing on a Co base material, etc. in producing a semiconductor device having wiring of Cu, etc., having steps of forming metal wiring including an additive on a first insulation film formed in a semiconductor substrate, and forming on the metal wiring a barrier layer for preventing diffusion of constituting elements of the metal wiring, wherein said additive is an element to reduce corrosion of the metal wiring at the time of forming the barrier layer in the step of forming the metal wiring.

Abstract: In the present invention, an episulfide compound having, in one molecule, at least one epithio structure represented by the following Formula 2: wherein R5 is C1-C10 hydrocarbylene or single bond, R6, R7 and R8 are each independently C1-C10 hydrocarbyl or hydrogen, Y is O, S, Se or Te, p is an integer from 1 to 5 and q is an integer from 0 to 5, is polymerized in the presence of a halide of a 13-16 group element of the long periodic table and/or a polymerization regulator represented by the following Formula 1: wherein R1, R2 and R3 are each C1-C10 hydrocarbyl or hydrogen, R4 is C1-C10 hydrocarbylene or single bond, X is F, Cl, Br, I, As, SH, OH, C1-C10 alkoxyl, C1-C10 alkylthio, or C1-C10 mercaptoalkylthio, and m is an integer from 1 to 5, to produce a cured resin suitable as an optical material. By using the polymerization regulator, the polymerization rate of the episulfide compound can be suitably regulated to obtain a cured resin with less defect.

Abstract: A polishing method and a polishing apparatus by which excess portions of a metallic film 18 can be removed easily and efficiently in planarizing the metallic film 18 by polishing and which is high in accuracy of polishing, are provided. Also, a method of manufacturing a semiconductor device by use of the polishing method and the polishing apparatus is provided. A substrate 17 provided with the metallic film 18 and a counter electrode 15 are disposed oppositely to each other in an electrolytic solution E, an electric current is passed to the metallic film 18 through the electrolytic solution E, and the surface of the metallic film 18 is polished with a hard pad 14.

Abstract: A polishing apparatus and a polishing method by which it is possible to restrain variations in the composition of an electrolytic solution 2 between a wafer 3 and a counter electrode 5, and the like, and to make current density distribution substantially constant in the plane of the wafer. The polishing apparatus, for planarizing a surface to be polished 3a by electrolytic combined polishing composed of a combination of electropolishing and mechanical polishing, includes a voltage impressing means 5 disposed oppositely to the surface to be polished 3a, and a discharging means for discharging foreign matter intermediately present between the voltage impressing means 5 and the object of polishing.

Abstract: The object is to make it possible to pass an electric current to the object of polishing with a stable current density distribution up to the end point of polishing, to use the same plating apparatus, cleaning apparatus and other apparatuses as those conventionally used, and to carry out the conventional manufacturing process flow. A substrate (1) provided with a metallic film (2) and a opposite electrode (3) are disposed oppositely to each other with a predetermined distance therebetween in an electrolytic solution, and an electric current is passed to the metallic film (2) through the electrolytic solution by an anode (4) set out of contact with the metallic film (2), so as to electropolish the metallic film (2). Simultaneously with the electropolishing, wiping is conducted by sliding a pad on the metallic film.

Abstract: An etching solution includes an anticorrosive for copper or a benzotriazole based anticorrosive in a hydrofluoric acid aqueous solution. An etching method makes use of the etching solution set out above. Moreover, a method for manufacturing a semiconductor device which should include the step of removing copper by the etching method. The method includes the steps of forming copper through a barrier layer made of a metal or metal compound, which is greater in ionization tendency than copper, so as to bury a wiring groove formed in an insulating film with the copper, followed by polishing additional copper and barrier layer formed on the insulating film, and etching a surface layer of the insulating film by use of the etching solution to remove an insulating defective layer made mainly of the barrier layer on the insulating film along with the surface layer of the insulating film.

Abstract: A magnetic memory device and a method of manufacturing the same, which are advantageous not only in that both the improvement of storage sensitivity and the reduction of power consumption can be achieved, but also in that a buried wiring having low resistance and high reliability can be formed in reduced time in a stable manner. Soft magnetic material layers forming the cladding structure of a word line and a bit line constituting an MRAM are formed by electroless plating, and the soft magnetic material layers are formed around main wirings (especially copper) of the word line and bit line so that the soft magnetic material layers individually have a uniform, satisfactory thickness, and further they are deposited with improved uniformity on the surface with which the electroless plating solution is in contact, and therefore the uniformity of cladding is improved at not only the bottom surface but also the sidewall of a wiring trench.