Abstract: There is provided a gallium nitride laminated substrate including: an n-type gallium nitride layer containing an n-type impurity; a p-type gallium nitride layer provided on the n-type gallium nitride layer, containing a p-type impurity, forming a pn-junction at an interface with the n-type gallium nitride layer, and having a p-type impurity concentration and a thickness such that, when a reverse bias voltage is applied to the pn-junction, a breakdown occurs due to a punchthrough phenomenon before occurrence of a breakdown due to an avalanche phenomenon; and an intermediate level layer provided on the p-type gallium nitride layer, containing a p-type gallium nitride which contains the p-type impurity at a higher concentration than the p-type gallium nitride layer, having at least one or more intermediate levels between a valence band and a conduction band, and configured to suppress an overcurrent resulting from a breakdown due to the punchthrough phenomenon in the p-type gallium nitride layer.

Abstract: A semiconductor device includes a semiconductor member having a mesa structure in which a first semiconductor layer and a second semiconductor layer are laminated on each other and having a pn junction; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode connected to the first semiconductor layer on a lower surface of the first semiconductor layer, and having a capacitance of the insulating film when a reverse bias voltage is applied between the first electrode and the second electrode, so that a first voltage applied to the insulating film between a corner position (a first position) where the side surface of the insulating film disposed on the side surface of the mesa structure an

Abstract: A semiconductor device of an embodiment includes a semiconductor layer having first and second plane, a first semiconductor region of a first conductivity type, second semiconductor regions of a second conductivity type between the first semiconductor region and the first plane, third semiconductor regions of a first conductivity type provided between the first semiconductor region and the first plane and provided between the second semiconductor regions, a fourth semiconductor region provided between the second semiconductor regions and the first plane, and having a higher second conductivity-type impurity concentration than the second semiconductor regions, a fifth semiconductor region of a first conductivity type between the fourth semiconductor region and the first plane, a sixth semiconductor region provided between the second semiconductor regions and the fourth semiconductor region, and having a higher electric resistance per unit depth than the second semiconductor regions, a gate electrode, and a gat

Abstract: A coating facility including: a first base outer surface coating zone; a second base inner surface coating zone; a second base outer surface coating zone; a clear inner surface coating zone and a clear outer surface coating zone; and a baking zone in which each wet coating film are simultaneously baked and cured.

Abstract: There is provided a semiconductor device, including: a semiconductor member having a mesa structure in which a second semiconductor layer having one of a p-type conductivity type and an n-type conductivity type is laminated on a first semiconductor layer having the other one of the p-type conductivity type and the n-type conductivity type, so that the second semiconductor layer is exposed on an upper surface of the mesa structure, a pn junction interface is exposed on a side surface of the mesa structure, and the first semiconductor layer is exposed on an outside upper surface of the mesa structure; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode electrically connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode electrically connec

Abstract: A method for producing an organic semiconductor film includes performing, in random order, applying an ink including an organic semiconductor, a first solvent having high affinity for the organic semiconductor, and a second solvent having lower affinity for the organic semiconductor than the first solvent and having a higher boiling point than the first solvent, to a lyophilic region of a substrate having at least one of a lyophilic region or a liquid repellent region disposed in the vicinity of the lyophilic region on a surface, and applying a solvent composed of the same type of solvent as the first solvent and used for controlling a volatilization rate of the first solvent in the ink applied to the lyophilic or the liquid repellant region; and then causing the first and second solvent in the ink applied to the lyophilic region to volatilize to produce an organic semiconductor film.

Abstract: The present invention provides a compound represented by the following formula [1] or a pharmaceutically acceptable salt thereof which has an excellent NHE3 inhibitory effect: A-Y??[1] wherein A represents a structure represented by the following formula [2]: wherein R11 and R12 each represent a halogen atom or others as described herein, R2 represents C1-6 alkyl or others as described herein, ring E represents triazole, tetrazole, pyrimidine, or others as described herein, R31 and R32 each represent a hydrogen atom, C1-6 alkyl, C1-6 alkoxy, or others as described herein, and W represents a single bond, the formula —NH—, the formula —O—, or the formula —CONH—, and Y represents a hydrogen atom or a structure selected from

Abstract: An exhaust gas treatment unit includes an exhaust gas treatment device, a bracket and a connecting pipe. The exhaust gas treatment device is mounted on a bracket. The connecting pipe is connected to the exhaust gas treatment device. The connecting pipe directs exhaust gas to the exhaust gas treatment device. The connecting pipe may include a supporting portion and a pipe portion, with the supporting portion supporting the bracket and the pipe portion being integrated with the supporting portion. Alternatively, the exhaust gas treatment unit may further include a supporting member having a supporting portion supporting the bracket and a pipe portion integrated with the supporting portion, with the pipe portion connected to the connecting pipe.

Abstract: PROBLEM Provided are an information processing system, an information processing apparatus, and an information processing method those for generating statistical data of vehicles traveling at a predetermined location. MEANS FOR SOLVING THE PROBLEM An information processing system 100 according to one embodiment of the disclosure herein includes an imaging unit 131 for capturing an image of a vehicle which is traveling, and a controller 121 for identifying a model of the vehicle based on the image of the vehicle captured by the imaging unit 131 and generating statistical data based on the model thus identified.

Abstract: The present invention provides a compound represented by the following formula [1] or a pharmaceutically acceptable salt thereof which has an excellent NHE3 inhibitory effect: [Formula 15] A-Y??[1] wherein A represents a structure represented by the following formula [2]: wherein R11 and R12 each represent a halogen atom or the like, R2 represents C1-6 alkyl or the like, ring E represents triazole, tetrazole, pyrimidine, or the like, R31 and R32 each represent a hydrogen atom, C1-6 alkyl, C1-6 alkoxy, or the like, and W represents a single bond, the formula —NH—, the formula —O—, or the formula —CONH—, and Y represents a hydrogen atom or a structure represented by the following formula [3?]:

Abstract: Before an insulation insertion part and/or an insulating contact part is compressed with a compression force, a first insulating member, a second insulating member, a case lid, and/or an insert-through part create a receiving space which allows the insulation insertion part to deform in a shape that reduces a compression stress acting on the insulation insertion part when the insulation insertion part is compressed and receive a deformed portion thereof, and/or a receiving space which allows an insulating member having the insulating contact part to deform in a shape that reduces a compression stress acting on the insulating contact part when the insulating contact part is compressed and receives the deformed portion thereof.

Abstract: A method for producing an organic semiconductor film includes performing, in random order, applying an ink including an organic semiconductor, a first solvent having high affinity for the organic semiconductor, and a second solvent having lower affinity for the organic semiconductor than the first solvent and having a higher boiling point than the first solvent, to a lyophilic region of a substrate having at least one of a lyophilic region or a liquid repellent region disposed in the vicinity of the lyophilic region on a surface, and applying a solvent composed of the same type of solvent as the first solvent and used for controlling a volatilization rate of the first solvent in the ink applied to the lyophilic or the liquid repellant region; and then causing the first and second solvent in the ink applied to the lyophilic region to volatilize to produce an organic semiconductor film.

Abstract: A piston manufacturing device includes a first forming device (42) configured to form an annular groove (61) in a piston (11), and a second forming device (52) configured to press an edge (15) of an opening (14) of the piston (11) toward other end side in an axial direction of the piston (11) and to form a thick section (65) extruded from an inner circumferential surface (12b) arranged between the edge (15) and the groove (61) toward an axial center side of the piston (11), wherein a recessed section (53) is formed at a portion of the second forming device (52) that is arranged to abut the edge (15) so that an inner circumferential side of the edge (15) is plastically deformed toward the other end side in an axial direction of the piston (11).

Abstract: Typical liquid-cooled compressors use the effective means of reducing no-load power by repeatedly starting and stopping an electric motor according to the amount of required air, but sufficient consideration has not been given to the fact that frequent starting and stopping of large-output electric motors leads to a decline in motor reliability. In order to solve this problem, a liquid-cooled compressor for circulating a liquid inside a compressor body using a pressure difference, and equipped with a cooling channel for circulating said liquid for cooling, configured so as to have an intake valve for adjusting the air intake of the compressor body, to change the amount of air taken in through the intake valve, and as a result, to perform a low-pressure operation during no-load operation at two levels of reduced operating pressure consisting of a value no less than a minimum circulation oil supply pressure and a low value.

Abstract: A coating facility including: a first base outer surface coating zone; a second base inner surface coating zone; a second base outer surface coating zone; a clear inner surface coating zone and a clear outer surface coating zone; and a baking zone in which each wet coating film are simultaneously baked and cured.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a first electrode, a first insulating layer, and a second electrode. The first semiconductor region includes a first region and a second region. The second semiconductor region is provided on the first semiconductor region in the first region. The third semiconductor region is provided on the first semiconductor region in the second region. The first electrode is provided on the third semiconductor region. The first electrode is electrically connected to the third semiconductor region. The first insulating layer is provided on the first electrode. The second electrode is provided on the second semiconductor region. A portion of the second electrode is positioned on the first insulating layer.

Abstract: The present invention provides novel compounds of formula [I] or pharmaceutically acceptable salts thereof: which are useful in the prevention or treatment of diseases such as schizophrenia, Alzheimer's disease, cognitive impairment, dementia, anxiety disorders (e.g., generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, acute stress disorder), depression, drug dependence, spasm, tremor, pain, Parkinson's disease, attention deficit hyperactivity disorder, bipolar disorder, eating disorder, or sleep disorders, which is based on the glycine uptake-inhibiting action.

Abstract: The present invention relates to a photochromic film comprising a photochromic dye and a resin component. The photochromic film has a nanoindentation hardness of equal to or greater than 800 nm on at least one of surfaces, surface A, thereof. The present invention further relates to a method of manufacturing a photochromic lens. The method of manufacturing a photochromic lens of the present invention comprises forming a photochromic film having a nanoindentation hardness ranging from 500 to 5000 nm on an outermost surface thereof as well as having a smaller nanoindentation hardness on a surface facing a first mold than that on the outermost surface by coating a photochromic liquid comprising a photochromic dye and a curable component on one surface of the first mold for formation of one of surfaces of a lens and subjecting the photochromic liquid to curing treatment, and a photochromic lens comprising a photochromic film on a lens substrate is obtained by means of the above first mold.