Abstract: An engine unit includes an engine, an exhaust gas treatment device and a connecting pipe. The engine has an exhaust gas port. The exhaust gas treatment device is arranged above the engine. The connecting pipe connects the exhaust gas port and the exhaust gas treatment device. The connecting pipe has an expandable-contractible bellows portion. The bellows portion has a linear form following the upward-downward direction. The lower end portion of the bellows portion is positioned lower than at least a part of the exhaust gas port.

Abstract: The present invention provides novel compounds of formula [IA] or pharmaceutically acceptable salts thereof: which are useful in the prevention or treatment of diseases such as schizophrenia, Alzheimer's disease, cognitive impairment, dementia, anxiety disorders (e.g., generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, acute stress disorder), depression, drug dependence, spasm, tremor, pain, Parkinson's disease, attention deficit hyperactivity disorder, bipolar disorder, eating disorder, or sleep disorders, which is based on the glycine uptake-inhibiting action.

Abstract: Disclosed is a cell including: a closed-end tubular case for accommodating a power generation element; a lid for the case; a terminal electrode disposed outside of the case and used for connection with another cell; an extraction electrode passing through the lid and used to extract power of the power generation element to the outside of the case; and a stepped connection electrode disposed outside of the case, the stepped connection electrode having a first flat portion to which the terminal electrode is connected and a second flat portion which is located at a level different from the level of the first flat portion and to which the extraction electrode is connected. The first and second flat portions have regions overlapping each other as viewed in a direction orthogonal to the thickness of the first and second flat portions.

Abstract: A semiconductor device includes a first semiconductor region of a first conductivity type, an element region, a terminal region, and a second electrode. The element region includes a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a gate electrode, and a first electrode. The terminal region includes a fifth semiconductor region of the second conductivity type, and a sixth semiconductor region of the second conductivity type. The terminal region surrounds the element region. The fifth semiconductor region is provided within the first semiconductor region. A plurality of the fifth semiconductor regions are provided along a second direction. The sixth semiconductor region is provided between the first semiconductor region and the fifth semiconductor region. A dopant of the sixth semiconductor region is higher than a dopant concentration of the fifth semiconductor region.

Abstract: A heteroaromatic methyl cyclic amine derivative represented by formula (IA) or a pharmaceutically acceptable salt thereof is useful for treatment or prophylaxis of diseases such as sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's disease, eating disorder, cephalalgia, hemicrania, pain, digestive diseases, epilepsy, inflammation, immune-related diseases, endocrine-related diseases and hypertension, on the basis of an orexin (OX) receptor antagonist activity.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type having an effective impurity concentration that is less than an effective impurity concentration of the first semiconductor layer arranged on the first semiconductor layer, a third semiconductor layer of a second conductivity type arranged on the second semiconductor layer, and a gate electrode formed in the first second semiconductor layer and the third semiconductor layer, wherein at least two regions are formed in the power semiconductor device, and a threshold voltage of the first region is different from a threshold voltage of the second region.

Abstract: Provided is an air compressor which exhibits improved reliability by resolving problems relating to drainage discharge defects, and exhibits improved energy efficiency. The air compressor comprises: a compressor body which compresses air; a compressed air flow path through which the compressed air from the compressor body flows; a heat exchanger which is provided to the compressor flow path so as to cool the compressed air from the compressor body; and a drainage pipe (62) which branches from the compressed air flow path so as to connect to the exterior, and through which drainage condensed from the compressed air cooled in the heat exchanger flows. A strainer (65) which removes foreign matter contaminating the drainage is provided to the drainage pipe (62). An on-off valve (66) at the downstream side of the strainer (65), and a pressure sensor (41) at the upstream side thereof, said sensor detecting pressure inside the drainage pipe (62), are each provided so as to resolve drainage discharge defects.

Abstract: A transparent molded article is comprised of a polymer of an isocyanate terminal prepolymer and one or more aromatic diamines, and the polymer further includes one or more phosphorous peroxide decomposing agents. The isocyanate terminal prepolymer is in the form of a reaction product of an aliphatic diisocyanate having an intramolecular cyclic structure and one of a polyether diol and a polyester diol, and the isocyanate group content of the prepolymer ranges from 10 to 20 weight percent.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a first drift layer, and a second drift layer. The first drift layer includes a first epitaxial layer of the first conductivity type, a plurality of first first-conductivity-type pillar layers, and a plurality of first second-conductivity-type pillar layers. The second drift layer is formed on the first drift layer and includes a second epitaxial layer of the first conductivity type, a plurality of second second-conductivity-type pillar layers, a plurality of second first-conductivity-type pillar layers, a plurality of third second-conductivity-type pillar layers, and a plurality of third first-conductivity-type pillar layers. The plurality of second second-conductivity-type pillar layers are connected to the first second-conductivity-type pillar layers. The plurality of second first-conductivity-type pillar layers are connected to the first first-conductivity-type pillar layers.

Abstract: The process for manufacturing a conductive film, said process being capable of achieving efficient progress of reduction of a metal oxide into a metal and yielding a conductive film which exhibits excellent adhesion to a substrate; and a printed wiring board. This process includes: a step for applying a dispersion which contains metal oxide particles to a substrate to form a precursor film which contains the particles; and a step for irradiating the precursor film with a continuous-wave laser beam while scanning the laser beam relatively, and thereby reducing the metal oxide in an irradiated area to form a metal-containing conductive film. In the process, the scanning speed is 1.0 m/s or more, the laser power of the continuous-wave laser beam is 6.0 W or more, and the irradiation time per point on the surface of the precursor film is 1.0 ?s or more.

Abstract: A conductive film manufacturing method includes a coating formation step of forming a coating by applying onto a thermoplastic resin substrate a conductive film-forming composition including copper oxide particles (A), copper particles (B), and an organic polymer (C), a ratio of a copper particle (B) content to a copper oxide particle (A) content as expressed by B/A being 10 to 50 wt %, and a reduction step of reducing the copper oxide particles (A) through irradiation of the coating with pulsed light, thereby forming a copper-containing conductive film. The conductive film obtained by irradiation with pulsed light according to this method has good adhesion to the thermoplastic resin substrate.

Abstract: A heteroaromatic methyl cyclic amine derivative represented by formula (IA) or a pharmaceutically acceptable salt thereof is useful for treatment or prophylaxis of diseases such as sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's disease, eating disorder, cephalalgia, hemicrania, pain, digestive diseases, epilepsy, inflammation, immune-related diseases, endocrine-related diseases and hypertension, on the basis of an orexin (OX) receptor antagonist activity.

Abstract: In a conductive layer manufacturing method, there is provided a reducing step of irradiating with light a precursor layer-carrying support having a support and a copper oxide particle-containing precursor layer provided on the support so as to reduce copper oxide particles contained in the precursor layer to thereby form a metallic copper-containing conductive layer, and a filling ratio of the copper oxide particles in the precursor layer is at least 65%.

Abstract: Before an insulation insertion part and/or an insulating contact part is compressed with a compression force, a first insulating member, a second insulating member, a case lid, and/or an insert-through part create a receiving space which allows the insulation insertion part to deform in a shape that reduces a compression stress acting on the insulation insertion part when the insulation insertion part is compressed and receive a deformed portion thereof, and/or a receiving space which allows an insulating member having the insulating contact part to deform in a shape that reduces a compression stress acting on the insulating contact part when the insulating contact part is compressed and receives the deformed portion thereof.

Abstract: A branched chain alkyl heteroaromatic ring derivative represented by formula (Ia) or a pharmaceutically acceptable salt thereof is useful for treatment or prophylaxis of diseases such as sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's disease, eating disorder, cephalalgia, hemicrania, pain, digestive diseases, epilepsy, inflammation, immune-related diseases, endocrine-related diseases and hypertension, on the basis of the orexin (OX) receptor antagonist activity.

Abstract: A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

Abstract: A power semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type formed on the first semiconductor layer and alternately arranged along at least one direction parallel to a surface of the first semiconductor layer; a first main electrode; a fourth semiconductor layer of the second conductivity type selectively formed in a surface of the second semiconductor layer and a surface of the third semiconductor layer; a fifth semiconductor layer of the first conductivity type selectively formed in a surface of the fourth semiconductor layer; a second main electrode; and a control electrode. At least one of the second and the third semiconductor layers has a dopant concentration profile along the one direction, the dopant concentration profile having a local minimum at a position except both ends thereof.

Abstract: A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third diffusion layers are the same.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.