Abstract: A semiconductor device includes a superjunction structure. The influence of external charge on device performance is suppressed using a shield electrode, field plate electrodes, and cover electrodes in various configurations. Optional embodiments include placing an interconnection film between certain electrodes and the upper surface of the superjunction structure. Cover electrodes may also be connected to various potentials to limit the effects of external charge on device performance.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type having an effective impurity concentration that is less than an effective impurity concentration of the first semiconductor layer arranged on the first semiconductor layer, a third semiconductor layer of a second conductivity type arranged on the second semiconductor layer, and a gate electrode formed in the first second semiconductor layer and the third semiconductor layer, wherein at least two regions are formed in the power semiconductor device, and a threshold voltage of the first region is different from a threshold voltage of the second region.

Abstract: According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.

Abstract: The present invention relates to novel compounds of formula [I] or pharmaceutically acceptable salts thereof: The compounds of the present invention are useful in the prevention or treatment of diseases such as schizophrenia, Alzheimer's disease, cognitive impairment, dementia, anxiety disorders (e.g., generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, acute stress disorder), depression, drug dependence, spasm, tremor, pain, Parkinson's disease, attention deficit hyperactivity disorder, bipolar disorder, eating disorder, or sleep disorders, which is based on the glycine uptake-inhibiting action.

Abstract: A negative electrode material for non-aqueous electrolyte secondary batteries, comprises: a carbon material having a sphericity of at least 0.8, and exhibiting an average (002) interlayer spacing d002 of 0.365-0.400 nm, a crystallite size in a c-axis direction Lc(002) of 1.0-3.0 nm, as measured by X-ray diffractometry, a hydrogen-to-carbon atomic ratio (H/C) of at most 0.1 as measured by elementary analysis, and an average particle size Dv50 of 1-20 ?m. The negative electrode material is spherical and exhibits excellent performances including high output performance and durability.

Abstract: A compound represented by formula (IA) or a pharmaceutically acceptable salt thereof, which is useful for the treatment or prevention of diseases such sleep disorder, depression, anxiety disorder, panic disorder, schizophrenia, drug dependence, Alzheimer's disease, Parkinson's disease, Huntington's chorea, eating disorder, pain, gastrointestinal diseases, epilepsy, inflammation, immune-related diseases, endocrine-related diseases, and hypertension, and of which the action relies on an orexin (OX) receptor antagonistic activity.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

Abstract: A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

Abstract: The present invention aims to provide novel compounds of formula [I] or pharmaceutically acceptable salts thereof that are based on a glycine uptake inhibiting action and which are useful in the prevention or treatment of such diseases as schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, posttraumatic stress disorder, specific phobia, acute stress disorder, etc.

Abstract: In general, according to one embodiment, a power semiconductor device includes a first pillar region, a second pillar region, and an epitaxial layer of a first conductivity type on a first semiconductor layer. The first pillar region is composed of a plurality of first pillar layers of a second conductivity type and a plurality of second pillar layers of the first conductivity type alternately arranged along a first direction. The second pillar region is adjacent to the first pillar region along the first direction and includes a third pillar layer of the second conductivity type, a fourth pillar layer of the first conductivity type, and a fifth pillar layer of the second conductivity type in this order along the first direction. A plurality of second base layers of the second conductivity type electrically connected, respectively, onto the third pillar layer and the fifth pillar layer and spaced from each other.

Abstract: A photochromic lens manufacturing system has an orderer side computer (101) and a manufacturer side computer (201) connected with each other through a communication line (300), and is adapted to manufacture a photochromic lens with an optical surface forming device (204), a photochromic film forming device (202) and a hard film forming device (204) under control of the manufacturer side computer (201). The orderer side computer (101) transmits lens substrate data related to a substrate material of the lens, optical surface data related to optical surfaces of the lens, data related to the photochromic film and data related to a hard film to the manufacturer side computer (201) through the communication line (300).

Abstract: A compound represented by formula [I] and a pharmaceutically accepted salt of said compound are a novel compound and a pharmaceutically accepted salt thereof which exert antagonistic activity against group II metabotropic glutamate (mGlu) receptors, and are effective as a novel preventive or therapeutic agent for disorders such as mood disorders (depressive disorder, bipolar disorder, etc.), anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, posttraumatic stress disorder, a specific phobic disorder, acute stress disorder, etc.), schizophrenia, Alzheimer's disease, cognitive impairment, dementia, drug dependence, convulsions, shivering, pain, sleep disorders, and the like.

Abstract: Provided is a novel compound represented by formula [I] or a pharmaceutically acceptable salt thereof having antagonistic activity against group II metabolism-type glutamic acid (m-Glu) receptors. The compound or pharmaceutically acceptable salt thereof is useful as a prophylactic or therapeutic agent for diseases such as new mood disorders (depressive and bipolar disorders), anxiety disorders (generalized anxiety disorder, panic disorder, obsessive-compulsive disorder, social anxiety disorder, post-traumatic stress disorder, specific phobias, and acute stress disorder), schizophrenia, Alzheimer's disease, cognitive dysfunction, dementia, drug dependence, convulsions, tremors, pain, sleep disorders, and the like.

Abstract: A semiconductor device includes first, second, and third semiconductor layers each having multiple diffusion layers. The first direction widths of the first diffusion layers are the same. The amount of impurity within the first diffusion layers gradually increases from the bottom end towards the top end of the first semiconductor layer. The first direction widths of the second diffusion layers are the same. The amounts of impurity within the second diffusion layers are the same. The first direction widths of the third diffusion layers are narrower than the first direction widths of the first diffusion layers and the first direction widths of the second diffusion layers at the same level, and gradually become narrower from the bottom end towards the top end of the third semiconductor layer. The amount of impurity within the third. diffusion layers are the same.

Abstract: A power semiconductor device includes a high resistance epitaxial layer having a first pillar region and a second pillar region as a drift layer. The first pillar region includes a plurality of first pillars of the first conductivity type and a plurality of second pillars of the second conductivity type disposed alternately along a first direction. The second pillar region is adjacent to the first pillar region along the first direction. The second pillar region includes a third pillar and a fourth pillar of a conductivity type opposite to a conductivity type of the third pillar. A net quantity of impurities in the third pillar is less than a net quantity of impurities in each of the plurality of first pillars. A net quantity of impurities in the fourth pillar is less than the net quantity of impurities in the third pillar.

Abstract: A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.

Abstract: A power semiconductor device includes: a first semiconductor layer; a second semiconductor layer and a third semiconductor layer provided in an upper portion of the first semiconductor layer and alternately arranged parallel to an upper surface of the first semiconductor layer; a plurality of fourth semiconductor layers provided on the third semiconductor layer; a fifth semiconductor layer selectively formed in an upper surface of each of the fourth semiconductor layers; a control electrode; a gate insulating film; a first main electrode provided on a lower surface of the first semiconductor layer; and a second main electrode provided on the fourth and the fifth semiconductor layers.

Abstract: A screw compressor comprising: a low pressure stage compressor body; a high pressure stage compressor body that further compresses a compressed air compressed by the low pressure stage compressor body; pinion gears for example, respectively, provided on, for example, a male rotor of the low pressure stage compressor body and, for example, a male rotor of the high pressure stage compressor body; a motor; a bull gear for example, provided on a rotating shaft of the motor; and an intermediate shaft supported rotatably and provided with a pinion gear, which meshes with the bull gear, and a bull gear, which meshes with the pinion gears. Thereby, it is possible to make the motor relatively low in rotating speed while inhibiting the gears from being increased in diameter, thus enabling achieving reduction in cost.

Abstract: A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer provided thereon, mutually separated columnar third semiconductor layers of a second conductivity type extending within the second semiconductor layer, island-like fourth semiconductor layers of the second conductivity type provided on the third semiconductor layers, fifth semiconductor layers of the first conductivity type, sixth semiconductor layers of the second conductivity type, a gate electrode, a first electrode, and a second electrode. The fifth semiconductor layers are selectively provided on the fourth semiconductor layers. The sixth semiconductor layer electrically connects two adjacent fourth semiconductor layers. The first electrode is in electrical connection with the first semiconductor. The second electrode is in electrical connection with the fourth semiconductor layers and the fifth semiconductor layers via the openings in the gate electrode.

Abstract: A drug effective for the treatment and prevention of psychiatric disorders such as schizophrenia, anxiety and related ailments thereof, depression, bipolar disorder and epilepsy. The drug antagonizes the action of group II metabotropic glutamate receptors and shows high activity in oral administration. A 2-amino-bicyclo[3.1.0]hexane-2,6-dicarboxylic ester derivative represented by formula [I] [wherein R1 and R2 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; X represents a hydrogen atom or a fluorine atom; Y represents —OCHR3R4 or the like (wherein R3 and R4 are identical or different, and each represents a hydrogen atom, a C1-10alkyl group or the like; and n represents integer 1 or 2)], a pharmaceutically acceptable salt thereof or a hydrate thereof.