Abstract: A method for correcting a synthesized speech set for hearing aid according to an aspect of the present invention includes the steps of outputting first synthesized speech for testing on the basis of first synthesized speech data for testing correlated with a first phoneme label in a synthesized speech set for testing, accepting a first answer selected by a user, outputting second synthesized speech for testing on the basis of second synthesized speech data for testing correlated with a second phoneme label in the synthesized speech set for testing, accepting a second answer selected by the user, and correlating first synthesized speech data for hearing aid with the second phoneme label instead of second synthesized speech data for hearing aid in a synthesized speech set for hearing aid, in a case in which the first answer matches the second phoneme label and also the second answer does not match the second phoneme label.

Abstract: The present invention includes a roller brush provided in a frame main body. The roller brush includes a rigid shaft, a pair of guide rollers, which are arranged concentrically with a shaft center line of the rigid shaft, and are mounted to shaft ends of the rigid shaft, and a cleaning brush cloth including cut piles raised from a cloth front surface of a foundation cloth. The cleaning brush cloth is helically wound around a shaft outer-peripheral surface of the rigid shaft with a cloth back surface of the foundation cloth being in contact with the shaft outer-peripheral surface, and is fixed to the rigid shaft.

Abstract: A CMP polishing solution containing abrasive grains, an iron ion supplying agent, an organic acid, an oxidizing agent, and an aqueous liquid medium, in which the abrasive grains include silica particles having sulfo groups and silica particles not having sulfo groups.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor member, a second semiconductor member, a first insulating member, and a second insulating member. The first to third electrodes extend along a first direction. The third electrode includes a first electrode portion. The first semiconductor member includes Alx1Ga1-x1N (0?x1<1). The first semiconductor member includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region. The second semiconductor member includes Alx2Ga1-x2N (0<x2?1, x1<x2). The second semiconductor member includes a first semiconductor portion, a second semiconductor portion and a third semiconductor portion. The first insulating member includes a first insulating portion. The second insulating member includes a first insulating region.

Abstract: A semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, a first conductive member, a first electrode, a first insulating member, and a second insulating member. The semiconductor member includes a first partial region, a second partial region, and a third partial region. The first partial region is between the second partial region the third partial region. The first conductive member includes a first conductive portion. The first conductive portion is between the second partial region and the third partial region. The first electrode is electrically connected to the first conductive member. The first electrode includes a first electrode portion, a second electrode portion, and a third electrode portion. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The second insulating member includes a first insulating portion and a second insulating portion.

Abstract: An electrostatic chuck of the disclosure includes a ceramic base in plate form, and an electrostatic attraction electrode. The ceramic base includes a plurality of particles containing aluminum oxide as a main component. The plurality of particles contain magnesium atoms and zirconium atoms.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0?x1<1). The second semiconductor region including Alx2Ga1-x2N (0<x2<1, x1<x2). The first nitride region includes Alz1Ga1-z1N (0<z1?1, x2<z1). The first nitride region includes a first nitride portion. The first nitride portion includes a first position. The first position is a center of the first nitride portion. The third partial region of the first semiconductor region includes a first face facing the first nitride portion. A chlorine concentration at the first position is lower than a chlorine concentration at the first face.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, and a first insulating member. The first semiconductor region includes Alx1Ga1-x1N (0?x1<1). The second semiconductor region includes Alx2Ga1-x2N (0<x2<1, x1<x2). A first nitride portion thickness along a second direction of the first nitride portion is thicker than a second nitride portion thickness along the first direction of the part of the second nitride portion. A first semiconductor portion thickness along the second direction of the first semiconductor portion is thicker than the first nitride portion thickness.

Abstract: A polarization diffraction element comprising including a film including a liquid crystalline material having photosensitivity, the film having at least one hologram recorded therein, and thereby having a property as a fork-shaped polarization grating having an anisotropic structure in which an optical axis continuously rotates toward a direction of a grating vector.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor region, a second semiconductor region, a first nitride region, a first insulating member, and a second insulating member. The third electrode includes a first electrode portion and a second electrode portion. The first semiconductor region includes Alx1Ga1?x1N (0?x1<1). The second semiconductor region includes Alx2Ga1?x2N (0<x2<1, x1<x2). The first nitride region includes Alz1Ga1?z1N (0<z1?1, x2<z1). The second insulating member includes a first insulating region. A part of the first insulating region is located between the fifth partial region of the first semiconductor region and the second electrode portion of the third electrode in the second direction.

Abstract: A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid containing abrasive grains, an iron-containing compound, and an oxidizing agent, in which the abrasive grains include silica particles, an average particle diameter of the abrasive grains is 40 to 140 nm, and a silanol group density of the silica particles is 8.0 groups/nm2 or less. A polishing method of polishing a surface to be polished containing a tungsten material by using the polishing liquid.

Abstract: Provided is an optical measurement apparatus including: a polarized light irradiation unit 10 that irradiates a subject Ob with irradiation light of which polarization is controlled; and a polarization imaging unit 20 that images a polarization state of measurement light occurring due to scattering, reflection, absorption, or the like of the irradiation light by the subject Ob, calculates all or a part of Stokes parameters of the measurement light, and measures a variation of a polarized component occurring between the irradiation light and the measurement light due to the subject Ob.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1?x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1?x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1?x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.

Abstract: A laminated coil component includes: an element body having a first surface and a second surface facing each other in a first direction; a coil unit formed by laminating a plurality of coil conductors in a second direction orthogonal to the first direction inside the element body; a first lead-out conductor; and a second lead-out conductor. A first coil conductor adjacent to the first lead-out conductor in the second direction includes a first side portion extending along the first surface, on a first surface side. A second coil conductor adjacent to the second lead-out conductor in the second direction includes a second side portion extending along the second surface, on a second surface side. The first side portion has a larger line width than other side portions of the first coil conductor and the second side portion.

Abstract: A photosensitive element comprising a support film, a barrier layer, and a photosensitive layer in this order, wherein the barrier layer contains a water-soluble resin and an ultraviolet absorber.

Abstract: A driver support system includes a processor that acquires a heart rate of a target person; evaluates a health condition of the target person based on the heart rate of the target person; and performs an operation setting of a moving object into which the target person gets as a driver. The processor evaluates the health condition of the target person based on an ordinary heart rate, which is a heart rate of the target person during an ordinary period, and a pre-driving heart rate which is a heart rate of the target person when the target person arrives at the moving object, performs the operation setting of the moving object based on a result of the health condition of the target person evaluated when the target person gets into the moving object as a driver.

Abstract: A health assessment system includes a processor that acquires biometric measurement data measured by a wearable terminal worn by a target person, the biometric measurement data being biometric data of the target person; generates complementary biometric data for complementing the biometric measurement data in a missing period in which the acquisition unit is not able to acquire the biometric measurement data from the wearable terminal; and assesses a health condition of the target person based on the biometric measurement data and the complementary biometric data, the processor acquires exercise information, which is information about exercise of the target person, from a mobile terminal carried by the target person, generates the complementary biometric data in the missing period, based on the exercise information of the target person which is obtained from the mobile terminal.

Abstract: According to one embodiment, a semiconductor device includes first and second regions, a first insulating portion, and first, second, and third electrodes. The first region includes first and second partial regions, and a third partial region between the first and second partial regions. The second region includes fourth and fifth partial regions. The fourth partial region overlaps the first partial region. The fifth partial region overlaps the second partial region. The first insulating portion includes first, second, and third insulating regions. The first insulating region is provided between the second insulating region and the third partial region and between the third insulating region and the third partial region. The first electrode is electrically connected to the fourth partial region. The second electrode is away from the first electrode and is electrically connected to the fifth partial region. The third electrode is provided between the first and second electrodes.