Patents by Inventor Hiroshi Ono

Hiroshi Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190248277
    Abstract: Information related to a vehicle can be displayed by projecting an image based on the information on a road surface or the like. An image projection apparatus that projects an image includes: an acquisition unit that acquires information to be displayed; and an image projection unit that projects the image based on the information to be displayed acquired by the acquisition unit.
    Type: Application
    Filed: April 25, 2019
    Publication date: August 15, 2019
    Applicant: MAXELL, LTD.
    Inventors: Yasuhiko KUNII, Nobuyuki KAKU, Toshinori SUGIYAMA, Hiroyuki NAKAMURA, Hiroshi CHIBA, Masahiro KISHIGAMI, Hiroyuki KAJIKAWA, Chohei ONO, Megumi KURACHI, Noriaki HARADA
  • Patent number: 10372666
    Abstract: A calculator includes a display, and a processor, wherein the processor is configured to perform processes including: receiving a selection operation of a calculation function type; receiving an input operation of calculation object data according to the selected calculation function type; displaying calculation result data obtained by a calculation based on the input calculation object data on the display; converting at least one of the calculation object data and the calculation result data into a two-dimensional code according to (i) the selected calculation function type and (ii) both of an input state of the calculation object data and a display state of the calculation result data during an output operation for outputting external data; and outputting, as the external data, an image of the two-dimensional code on the display.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: August 6, 2019
    Assignee: CASIO COMPUTER CO., LTD.
    Inventors: Manato Ono, Saburo Kamitani, Hiroaki Yoshizawa, Hiroshi Uejima
  • Patent number: 10363927
    Abstract: A speed change control apparatus for a work vehicle includes a hydraulic continuously variable speed transmission that performs speed change on power input from an engine by changing a trunnion shaft angle based on a depressing amount of a speed change pedal and outputs the power, a pedal position detector that detects a pedal position responsive to the depressing amount of the speed change pedal, and a control unit that controls a number of revolutions of the engine and the trunnion shaft angle of the hydraulic continuously variable speed transmission based on a detection value of the pedal position detector. The control unit performs control so that the trunnion shaft angle is maximized at a second pedal position set to a position shallower than a first pedal position at which the number of revolutions of the engine is maximized by a depressing operation of the speed change pedal.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: July 30, 2019
    Assignee: ISEKI & CO., LTD.
    Inventors: Koki Ono, Hiroshi Kamoda
  • Publication number: 20190227195
    Abstract: The present invention aims to provide an optical layered body that has excellent interlayer adhesiveness, particularly even in outdoor use, and also has highly excellent anti-blocking properties. The present invention relates to an optical layered body including: a substrate film; a hard coat layer containing silica fine particles on at least one surface of the substrate film; and a dry film layer on a surface of the hard coat layer opposite to the substrate film side surface of the hard coat layer, wherein the silica fine particles are exposed on the dry film layer side surface of the hard coat layer; the dry film layer is directly formed on the surface of the hard coat layer on which the silica fine particles are exposed; the hard coat layer before the formation of the dry film layer has projections and depressions on the surface on which the dry film layer is to be formed; the hard coat layer has an average silica fine particle abundance in ten 0.2 ?m×0.
    Type: Application
    Filed: July 10, 2017
    Publication date: July 25, 2019
    Applicants: Dai Nippon Printing Co., Ltd., Dexerials Corporation
    Inventors: Tomoyuki HORIO, Masataka NAKASHIMA, Hiroshi NAKAMURA, Takahisa NOMURA, Seiji SHINOHARA, Kiyotaka MATSUI, Kentaro OSHIMA, Satoshi KUBOYAMA, Yukihiro ONO
  • Patent number: 10351382
    Abstract: Provided is a sheet processing apparatus, including: a placement portion to which a sheet conveyed by a conveyance portion in a conveyance direction is placed; a processing portion configured to perform predetermined processing on a sheet placed on the placement portion, and to be movable in a predetermined moving range; and a control portion configured to control the processing portion to position, at a timing at which a sheet conveyed by the conveyance portion passes through the moving range, from a first position of preventing from interfering with the sheet to a second position of performing the predetermined processing on a preceding sheet having been conveyed by the conveyance portion and placed on the placement portion before the sheet.
    Type: Grant
    Filed: February 9, 2017
    Date of Patent: July 16, 2019
    Assignee: Canon Finetech Nisca Inc.
    Inventors: Shintaro Moriya, Kazuhiko Watanabe, Hiroshi Amano, Seiji Ono, Ichiro Yoda, Masao Ueno
  • Patent number: 10343513
    Abstract: A work vehicle is disclosed that includes an elastic support mechanism for supporting an exhaust muffler. The elastic support mechanism includes a support platform member, an elastic cylindrical members and an bar-shaped member. The support platform member is supported by a rear-linking frame bar to adjust a position of the support platform member along one of lateral and longitudinal directions of the body frame. An elastic cylindrical member supported by one of the support platform member and the exhaust muffler. The elastic cylindrical member has an axis extending along the other of the lateral and longitudinal directions, and is supported at a single position, in a direction of the axis, of said one of the support platform member and the exhaust muffler. A bar-shaped member supported by the other of the support platform member and the exhaust muffler is fitted into the elastic cylindrical member to be supported by the elastic cylindrical member.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: July 9, 2019
    Assignee: Kubota Corporation
    Inventors: Yoshinori Oyama, Kimihiro Kai, Hiroshi Takagi, Toshiki Ono, Kohta Nakao, Takafumi Komatsu, Kensuke Okabe, Yuki Nakaoka
  • Patent number: 10347734
    Abstract: A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: July 9, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Shimizu, Hisashi Saito, Hiroshi Ono, Toshiya Yonehara
  • Publication number: 20190194775
    Abstract: A steel sheet having a specified chemical composition and a method for producing the steel sheet. The steel sheet has a microstructure including martensite and bainite. The total area fraction of the martensite and the bainite to the entirety of the microstructure is more than 90% and 100% or less. The microstructure includes inclusion clusters A and B, the content of the clusters A in the microstructure being 2 clusters/mm2 or less, and the content of the clusters B in the microstructure being 5 clusters/mm2 or less. The microstructure includes carbide particles including Fe as a main constituent which have an aspect ratio of 2.0 or less and a major axis of 0.30 ?m or more and 2 ?m or less. The content of the carbide particles in the microstructure is 4000 particles/mm2 or less. The microstructure includes prior ? grains having an average size of 6 to 15 ?m.
    Type: Application
    Filed: September 28, 2017
    Publication date: June 27, 2019
    Applicant: JFE STEEL CORPORATION
    Inventors: Yoshihiko ONO, Shimpei YOSHIOKA, Nobuyuki NAKAMURA, Hiroshi HASEGAWA
  • Publication number: 20190189758
    Abstract: A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer on the first nitride semiconductor layer; a first electrode and a second electrode disposed on or above the first nitride semiconductor layer; a gate electrode above the first nitride semiconductor layer; and a gate insulating layer, the gate insulating layer including a silicon oxide film and an aluminum oxynitride film, the aluminum oxynitride film disposed between the first nitride semiconductor layer and the silicon oxide film, a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the aluminum oxynitride film being higher than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position in the aluminum oxynitride film, and the second position being closer to the silicon oxide film than the first position.
    Type: Application
    Filed: February 13, 2019
    Publication date: June 20, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo SHIMIZU, Toshiya YONEHARA, Hiroshi ONO, Daimotsu KATO, Akira MUKAI
  • Publication number: 20190185021
    Abstract: [Solving Means] An information presentation apparatus includes an acquisition unit, an asymmetric acceleration generating unit, and a signal generating unit. The acquisition unit is configured to acquire at least either one of information inside a vehicle or information outside the vehicle. The asymmetric acceleration generating unit is configured to present haptic feedback information to a user via a steering unit provided in the vehicle by generating asymmetric acceleration. The signal generating unit is configured to generate a driving signal on the basis of information acquired by the acquisition unit and send the driving signal to the asymmetric acceleration generating unit.
    Type: Application
    Filed: August 18, 2017
    Publication date: June 20, 2019
    Inventors: AKIRA ONO, HIROKAZU HASHIMOTO, HIROSHI UJI
  • Publication number: 20190160762
    Abstract: The fiber-reinforced resin intermediate material according to the present invention is formed by attaching a resin powder to an outer surface of a reinforcing fiber substrate formed of reinforcing fibers and heating it to melt the resin powder to the outer surface of the reinforcing fiber substrate so as to have an uneven shape derived from the resin powder and also have an opened void space.
    Type: Application
    Filed: April 14, 2017
    Publication date: May 30, 2019
    Applicant: THE JAPAN STEEL WORKS, LTD.
    Inventors: Akio ONO, Hiroshi ITO, Tsukasa SHIROGANEYA, Takuya NIYAMA, Takuya IWAMOTO, Shigeki INOUE
  • Patent number: 10285657
    Abstract: A diagnosis support device, which is suitable for comparing different diseases, is provided, along with others. In the diagnosis support device, the input of an MRI brain image of a subject is received, and a shrinkage score, which represents the degree of shrinkage of the brain, is calculated based on the MRI brain image. Subsequently, sites to be compared in the brain are identified. Then, a degree of shrinkage, which represents the degree of shrinkage of each of the identified sites, and a shrinkage ratio, which is the ratio between the degrees of shrinkage of the sites, are calculated, and then compared and displayed.
    Type: Grant
    Filed: September 24, 2015
    Date of Patent: May 14, 2019
    Assignee: DAI NIPPON PRINTING CO., LTD.
    Inventors: Tetsutaro Ono, Tomoaki Goto, Hiroshi Matsuda
  • Publication number: 20190139744
    Abstract: A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.
    Type: Application
    Filed: January 4, 2019
    Publication date: May 9, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takao FUNAKUBO, Hirofumi HAGA, Shinichi KOZUKA, Wataru OZAWA, Akihiro SAKAMOTO, Naoki TANIGUCHI, Hiroshi TSUJIMOTO, Kumiko ONO
  • Publication number: 20190115461
    Abstract: In one embodiment, a semiconductor device is provided with a semiconductor layer made of a nitride semiconductor, a first gate electrode, a first structure body between the first gate electrode and the semiconductor layer, and a first insulating layer between the semiconductor layer and the first structure body. The first structure body has a first intermediate layer made of a conductor to suppress generation of charges at respective interfaces with adjacent layers, a first layer having dielectric property between the first gate electrode and the first intermediate layer, and a second layer having dielectric property between the first gate electrode and the first layer, and has dipoles at an interface between the first layer and the second layer.
    Type: Application
    Filed: August 31, 2018
    Publication date: April 18, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Toshiya Yonehara, Tatsuo Shimizu, Hiroshi Ono, Daimotsu Kato
  • Patent number: 10256308
    Abstract: A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a second nitride semiconductor layer on the first nitride semiconductor layer; a first electrode and a second electrode disposed on or above the first nitride semiconductor layer; a gate electrode above the first nitride semiconductor layer; and a gate insulating layer, the gate insulating layer including a silicon oxide film and an aluminum oxynitride film, the aluminum oxynitride film disposed between the first nitride semiconductor layer and the silicon oxide film, a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the aluminum oxynitride film being higher than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position in the aluminum oxynitride film, and the second position being closer to the silicon oxide film than the first position.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: April 9, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Shimizu, Toshiya Yonehara, Hiroshi Ono, Daimotsu Kato, Akira Mukai
  • Publication number: 20190088771
    Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first region, and a first insulating layer. The first electrode includes a first electrode portion. The first region contains Ga and N. The first region includes a first subregion, a second subregion, and a third subregion. The first subregion and the third subregion contain at least one first element selected from the group consisting of Ar, B, P, N, and Fe. The first subregion is located between the first electrode portion and the second subregion in a first direction. The second subregion does not contain the first element, or concentration of the first element in the second subregion is lower than concentration of the first element in the first subregion and lower than concentration of the first element in the third subregion. The first insulating layer is provided between the first electrode and the first region.
    Type: Application
    Filed: February 21, 2018
    Publication date: March 21, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masahiko Kuraguchi, Yosuke Kajiwara, Miki Yumoto, Hiroshi Ono
  • Patent number: 10211301
    Abstract: A semiconductor device according to an embodiment includes: a wide bandgap semiconductor layer; a gate electrode; and a gate insulating layer disposed between the wide bandgap semiconductor layer and the gate electrode, including a first silicon oxide film, a second silicon oxide film between the first silicon oxide film and the gate electrode, and a first aluminum oxynitride film between the first silicon oxide film and the second silicon oxide film, and having a first atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a first position in the first aluminum oxynitride film which is lower than a second atomic ratio of nitrogen relative to a sum of oxygen and nitrogen at a second position, closer to the second silicon oxide film than the first position, in the first aluminum oxynitride film.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: February 19, 2019
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Shimizu, Toshiya Yonehara, Hiroshi Ono, Daimotsu Kato
  • Patent number: 10153347
    Abstract: A semiconductor device includes a first nitride semiconductor layer containing Ga, a second nitride semiconductor layer provided on the first nitride semiconductor layer containing Ga, a first electrode and a second electrode provided on or above the first nitride semiconductor layer and electrically connected to the first nitride semiconductor layer, a gate electrode provided between the first electrode and the second electrode, a conductive layer provided on or above the second electrode, of which a first distance to the second electrode is smaller than a second distance between the second electrode and the gate electrode, and which is electrically connected to the first electrode or the gate electrode, a first aluminum oxide layer provided between the gate electrode and the second electrode and provided between the second nitride semiconductor layer and the conductive layer, a silicon oxide layer, and a second aluminum oxide layer.
    Type: Grant
    Filed: September 5, 2017
    Date of Patent: December 11, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo Shimizu, Hisashi Saito, Hiroshi Ono
  • Publication number: 20180308950
    Abstract: A semiconductor device includes a nitride semiconductor layer, a first electrode and second electrode on the nitride semiconductor layer, a gate electrode, and a gate insulating layer between the nitride semiconductor layer and the gate electrode. The gate insulating layer has a first oxide region containing at least any one element of aluminum and boron, gallium, and silicon. When a distance between the first end portion and the second end portion of the first oxide region is defined as d1, and a position separated by d1/10 from the first end portion toward the second end portion is defined as a first position, an atomic concentration of gallium at the first position is 80% or more and 120% or less of that of the at least any one element.
    Type: Application
    Filed: February 6, 2018
    Publication date: October 25, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Tatsuo SHIMIZU, Hisashi SAITO, Hiroshi ONO, Toshiya YONEHARA
  • Publication number: 20180274507
    Abstract: An objective of the present invention is to provide a fuel rail that can be used at a high fuel pressure of 50 MPa or more, for example, has good engine mountability, and has improved material yield.
    Type: Application
    Filed: January 12, 2016
    Publication date: September 27, 2018
    Applicant: HITACHI AUTOMOTIVE SYSTEMS, LTD.
    Inventors: Eiichi KUBOTA, Koji HARADA, Keiichi URAKI, Shinya NAKATANI, Hiroshi ONO, Masahiro SOMA