Patents by Inventor Hiroshi Ono

Hiroshi Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220016897
    Abstract: A liquid cartridge includes: a cartridge casing having a liquid storage chamber; a first wall; a second wall; and an air communication passage. The first wall is positioned upward relative to the liquid storage chamber. The second wall is positioned upward relative to the first wall. The air communication passage has a first communication hole in communication with the liquid storage chamber and a communication opening open to an atmosphere. The air communication passage includes: an air chamber defined by the first wall and the second wall and in communication with the liquid storage chamber through the first communication hole; a second communication hole formed in the second wall; and a labyrinth path. The labyrinth path is positioned upward relative to the air chamber, and has one end in communication with the second communication hole and another end in communication with the communication opening.
    Type: Application
    Filed: July 30, 2021
    Publication date: January 20, 2022
    Applicant: BROTHER KOGYO KABUSHIKI KAISHA
    Inventors: Tetsuro KOBAYASHI, Hiroaki TAKAHASHI, Takahiro MIYAO, Fumio NAKAZAWA, Naoya OKAZAKI, Akihito ONO, Kosuke NUKUI, Hiroshi TAIRA, Toyonori SASAKI
  • Patent number: 11225389
    Abstract: An image forming apparatus includes a main body, a sheet cassette attachable to the main body and configured to support one or more sheets to be supplied to the image forming unit, and a controller. The main body includes an electrode movable relative to the main body, a capacitance detector configured to output a signal indicating a value corresponding to a quantity of electricity stored in the electrode, and a wire. The sheet cassette includes a metal member, and a sheet supporting plate made of metal, movable relative to the sheet cassette in an up-down direction, and configured to support one or more sheets from below. The controller is configured to determine whether the sheet cassette is at an installation position in the main body from a level of the value of the signal outputted from the capacitance detector connected to the electrode via the wire.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: January 18, 2022
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventor: Hiroshi Ono
  • Publication number: 20220014124
    Abstract: An electric motor system includes a drive shaft, a first electric motor, a second electric motor, a first inverter, a second inverter and a control unit. The drive shaft is rotatable around an axis. The first electric motor and the second electric motor rotate the drive shaft. The first inverter supplies power in order to generate a torque to the first electric motor. The second inverter supplies power in order to generate a torque to the second electric motor. The control unit controls the first inverter and the second inverter. The controller is configured to be able to change a ratio between an output torque of the first electric motor and an output torque of the second electric motor.
    Type: Application
    Filed: September 24, 2021
    Publication date: January 13, 2022
    Inventors: Takaaki ONO, Yusuke IRINO, Hiroshi HIBINO
  • Publication number: 20220007911
    Abstract: The present invention provides a manual cleaning tool that enables suppression of plastic deformation (permanent deformation) such as bending when a roller brush is removed. The present invention includes a roller brush (7) provided in a frame main body (15). The roller brush (7) includes a rigid shaft (46), a pair of guide rollers (47, 48), which are arranged concentrically with a shaft center line (G) of the rigid shaft (46), and are mounted to shaft ends (46A, 46B) of the rigid shaft (46), and a cleaning brush cloth (49) including cut piles (52) raised from a cloth front surface (51A) of a foundation cloth (51). The cleaning brush cloth (49) is helically wound around a shaft outer-peripheral surface (46C) of the rigid shaft (46) with a cloth back surface (51B) of the foundation cloth (51) being in contact with the shaft outer-peripheral surface (46C), and is fixed to the rigid shaft. The roller brush (7) is removable from the frame main body (15) under an elastically deformed state of the rigid shaft (46).
    Type: Application
    Filed: May 16, 2019
    Publication date: January 13, 2022
    Inventors: Hiroshi Ono, Yusuke Hino, Tsutomu Sato, Rio Otsuru, Keiko Nishimura, Ryo Iriguchi
  • Publication number: 20210402867
    Abstract: A first case portion includes an end wall portion disposed on a first axial side with respect to a transmission. A second case portion is disposed on the first axial side with respect to a rotor of a rotary electric machine, and includes a first support portion that supports a rotor shaft and a second support portion disposed on a second axial side with respect to the rotor of the rotary electric machine to support the rotor shaft. The second support portion includes a bearing attachment portion to which a rotor bearing for supporting the rotor shaft is attached, and radially extending portion that extends from bearing attachment portion toward an outer side in a radial direction. A speed reducer is disposed between the radially extending portion and the end wall portion in axial direction to face the radially extending portion and the end wall portion in the axial direction.
    Type: Application
    Filed: January 17, 2020
    Publication date: December 30, 2021
    Applicant: Aisin Corporation
    Inventors: Hiroshi KATO, Daiki SUYAMA, Takuyo MAEDA, Keita INDA, Kohei ONO, Toshihisa MIZUTANI, Ryosuke MURAMATSU, Wataru TAKAKI, Tetsuro KOBAYASHI
  • Patent number: 11211463
    Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: December 28, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Toshiki Hikosaka, Hiroshi Ono, Jumpei Tajima, Masahiko Kuraguchi, Shinya Nunoue
  • Publication number: 20210384337
    Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1?x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1?x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1?x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
    Type: Application
    Filed: August 20, 2021
    Publication date: December 9, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Daimotsu KATO, Yosuke KAJIWARA, Akira MUKAI, Aya SHINDOME, Hiroshi ONO, Masahiko KURAGUCHI
  • Patent number: 11189718
    Abstract: According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, a first conductive part, first and second insulating layers. The third electrode includes first and second portions. The first portion is between the first electrode and the second electrode. The first semiconductor layer includes first, second, third, fourth and fifth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor layer includes first and second semiconductor regions. The first conductive part is electrically connected to the first electrode. The first insulating layer includes a first insulating portion. The second insulating layer includes first and second insulating regions.
    Type: Grant
    Filed: February 25, 2020
    Date of Patent: November 30, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Masahiko Kuraguchi, Yosuke Kajiwara, Aya Shindome, Hiroshi Ono, Daimotsu Kato, Akira Mukai
  • Patent number: 11136474
    Abstract: A polishing liquid for polishing a surface to be polished containing a tungsten material, the polishing liquid comprising abrasive grains; a polymer having a cationic group at the terminal; an oxidizing agent; a metal oxide-dissolving agent; and water, in which the polymer has a structural unit derived from an unsaturated carboxylic acid, a weight average molecular weight of the polymer is 20000 or less, and a pH is less than 5.0.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: October 5, 2021
    Assignee: Showa Denko Materials Co., Ltd.
    Inventors: Hiroshi Ono, Makoto Mizutani
  • Patent number: 11139393
    Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1-x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1-x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1-x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: October 5, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Aya Shindome, Hiroshi Ono, Masahiko Kuraguchi
  • Publication number: 20210286265
    Abstract: A photosensitive element comprising a support film, a barrier layer, and a photosensitive layer in this order, wherein the barrier layer contains a water-soluble resin and an ultraviolet absorber.
    Type: Application
    Filed: May 8, 2019
    Publication date: September 16, 2021
    Inventors: Masakazu KUME, Hiroshi ONO
  • Publication number: 20210256867
    Abstract: A driving simulator with which a person with impaired vision can accurately recognize danger at driving and influence of a visual field loss on driving can be experienced is provided. A controller (6) of this driving simulator (1) executes simulated video display control to store visual field loss information data of a user M and simulated video data and display the simulated video data on a screen (8). The controller (6) stores association video data in which a viewpoint O of the user M, the visual field loss information data, and a video of an object in the simulated video data are associated with one another being centered at the viewpoint O of the user M in an identical video during execution of the simulated video display control, and performs playback display of the association video data on the screen (8) after end of the simulated video display control.
    Type: Application
    Filed: July 18, 2019
    Publication date: August 19, 2021
    Inventors: Junpei KUWANA, Hiroshi ONO, Makoto ITO
  • Publication number: 20210257243
    Abstract: An electrostatic chuck of the disclosure includes a ceramic base in plate form, and an electrostatic attraction electrode. The ceramic base includes a plurality of particles containing aluminum oxide as a main component. The plurality of particles contain magnesium atoms and zirconium atoms.
    Type: Application
    Filed: August 27, 2019
    Publication date: August 19, 2021
    Applicant: KYOCERA Corporation
    Inventor: Hiroshi ONO
  • Patent number: 11088269
    Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first nitride region, a second nitride region, and a first insulating film. The first nitride region includes Alx1Ga1-x1N. The first nitride region includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The second nitride region includes Alx2Ga1-x2N. The second nitride region includes sixth and seventh partial regions. The first insulating film includes a first insulating region and is between the third partial region and the third electrode. The third partial region has a first surface opposing the first insulating region. The fourth partial region has a second surface opposing the sixth partial region.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: August 10, 2021
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Aya Shindome, Hiroshi Ono, Masahiko Kuraguchi
  • Publication number: 20210234012
    Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, and a nitride member. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The nitride member includes a first nitride layer and a second nitride layer. The first nitride layer includes first, second, and third partial regions. The first electrode includes first, second, and third conductive portions, and a first conductive layer. The first, second, third conductive portions, and a portion of the second nitride layer are between the first partial region and the first conductive layer. The first, second, and third conductive portions are electrically connected to the first conductive layer. The second nitride layer includes a first region between the first and second conductive portions.
    Type: Application
    Filed: September 9, 2020
    Publication date: July 29, 2021
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
    Inventors: Hiroshi ONO, Yosuke KAJIWARA, Masahiko KURAGUCHI
  • Patent number: 11019233
    Abstract: An optical scanning device includes a controller, and a scanning unit connected with the controller via a signal line. The scanning unit includes a semiconductor laser having light emitting elements, an optical system configured to convert light emitted by each light emitting element into a beam, a deflector configured to deflect the beam received through the optical system, and a shift register including a plurality of output terminals each configured to output a light emission signal for controlling light emission from a corresponding one of the light emitting elements, and an input terminal configured to receive a shift signal from the controller via the signal line. The shift register is configured to, each time receiving the shift signal via the input terminal, shift a specific output terminal to output the light emission signal from one output terminal to another in sequence among the plurality of output terminals.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: May 25, 2021
    Assignee: Brother Kogyo Kabushiki Kaisha
    Inventors: Takato Mori, Hiroshi Ono, Kunihiro Amano
  • Publication number: 20210072447
    Abstract: A polarization diffraction element comprising a film including a liquid crystalline material having photosensitivity, the film having at least one hologram recorded therein, and thereby having a property as a fork-shaped polarization grating having an anisotropic structure in which an optical axis continuously rotates toward a direction of a grating vector.
    Type: Application
    Filed: September 8, 2020
    Publication date: March 11, 2021
    Inventors: Takeya SAKAI, Moritsugu SAKAMOTO, Hiroshi ONO, Nobuhiro KAWATSUKI
  • Patent number: 10941365
    Abstract: A method is provided for producing a solid fuel to be used as fuel for a pulverized coal boiler from wood biomass as a source material at a high mass yield and calorie yield by performing a grinding treatment in a mixture with coal. A solid fuel is produced by adjusting the moisture of a ground powder of wood biomass to between 8 and 50%; densifying the ground powder of wood biomass to a bulk density of 0.55 g/cm3 or higher (measured according to JIS K 2151-6 “Bulk density test method”); and then subjecting the ground powder of wood biomass to torrefaction under conditions of an oxygen concentration of 10% or less and a temperature between 170 and 350° C. Since the bulk density of a source material is high, a trouble in conveyance such as clogging of a rotary valve at an inlet of a carbonization furnace, or clogging of a cyclone after a drier due to excessive reject can be prevented.
    Type: Grant
    Filed: September 26, 2013
    Date of Patent: March 9, 2021
    Assignee: NIPPON PAPER INDUSTRIES CO., LTD.
    Inventors: Hiroshi Ono, Hiroshi Shinkura, Tomonori Kawamata
  • Publication number: 20210066486
    Abstract: According to one embodiment, a semiconductor device includes first to fourth semiconductor regions, and an insulating part. The third electrode is between the first and second electrodes in a first direction from the first electrode toward the second electrode. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. A second direction from the first partial region toward the first electrode crosses the first direction. The second semiconductor region includes Alx2Ga1-x2N and includes sixth and seventh partial regions. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region between the fifth and seventh partial regions. The fourth semiconductor region includes Alx4Ga1-x4N and includes a first portion between the fifth and eighth partial regions. The fourth semiconductor region includes a first element not included the first to third semiconductor regions. The insulating part includes first to third insulating regions.
    Type: Application
    Filed: February 26, 2020
    Publication date: March 4, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yosuke KAJIWARA, Hiroshi ONO, Jumpei TAJIMA, Toshiki HIKOSAKA, Shinya NUNOUE, Masahiko KURAGUCHI
  • Patent number: 10923346
    Abstract: A Group III nitride semiconductor for growing a high-quality crystal having a low defect density and a method for producing the Group III nitride semiconductor. The Group III nitride semiconductor includes an RAMO4 substrate including a single crystal represented by the general formula RAMO4 (where R represents one or more trivalent elements selected from the group consisting of Sc, In, Y and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn and Cd); a p-type Group III nitride crystal layer disposed on the RAMO4 substrate; a plurality of n-type Group III nitride crystal layers disposed on the p-type Group III nitride crystal layer; and a Group III nitride crystal layer disposed on the n-type Group III nitride crystal layers.
    Type: Grant
    Filed: September 6, 2019
    Date of Patent: February 16, 2021
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Akihiko Ishibashi, Hiroshi Ono, Kenya Yamashita