Patents by Inventor Hiroshi Ono
Hiroshi Ono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230246079Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, an electrode portion, a pad portion, and first and second conductive members. The semiconductor member includes a first semiconductor layer and a second semiconductor layer. The electrode portion includes a source electrode, a gate electrode including a first gate portion, and a drain electrode. The first gate portion is between the source electrode and the drain electrode. The pad portion includes a drain pad. The first conductive member includes a first conductive portion. The drain pad is between the electrode portion and the first conductive portion. The second conductive member includes at least one of first to third conductive regions. The first conductive portion is between the drain pad and the first conductive region. The electrode portion is between the second conductive region and the third conductive region.Type: ApplicationFiled: August 19, 2022Publication date: August 3, 2023Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke KAJIWARA, Masahiko KURAGUCHI, Aya SHINDOME, Hiroshi ONO
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Patent number: 11677020Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first to third nitride regions, and first and second insulating films. The first nitride region includes Alx1Ga1?x1N, and includes first and second partial regions, a third partial region between the first and second partial regions, a fourth partial region between the first and third partial regions, and a fifth partial region between the third and second partial regions. The first nitride region includes first to fifth partial regions. The second nitride region includes Alx2Ga1?x2N, and sixth and seventh partial regions. At least a portion of the third electrode is between the sixth and seventh partial regions. The first insulating film includes silicon and oxygen and includes first and second insulating regions. The third nitride region includes Alx3Ga1?x3N, and first to seventh portions. The second insulating film includes silicon and oxygen and includes third to seventh insulating regions.Type: GrantFiled: August 20, 2021Date of Patent: June 13, 2023Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Aya Shindome, Hiroshi Ono, Masahiko Kuraguchi
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Patent number: 11658235Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first region, and a first insulating layer. The first electrode includes a first electrode portion. The first region contains Ga and N. The first region includes a first subregion, a second subregion, and a third subregion. The first subregion and the third subregion contain at least one first element selected from the group consisting of Ar, B, P, N, and Fe. The first subregion is located between the first electrode portion and the second subregion in a first direction. The second subregion does not contain the first element, or concentration of the first element in the second subregion is lower than concentration of the first element in the first subregion and lower than concentration of the first element in the third subregion. The first insulating layer is provided between the first electrode and the first region.Type: GrantFiled: February 21, 2018Date of Patent: May 23, 2023Assignee: Kabushiki Kaisha ToshibaInventors: Masahiko Kuraguchi, Yosuke Kajiwara, Miki Yumoto, Hiroshi Ono
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Publication number: 20230150895Abstract: Provided is a soil conditioner that comprises, as an active ingredient, a compound represented by general formula (1), a salt thereof or a solvate of the same. In general formula (1), R1 to R6 independently represent an optionally substituted hydrocarbon group having 1-5 carbon atoms, an optionally substituted alkoxy group having 1-5 carbon atoms, an amino group, a hydroxy group, a halogen atom or a hydrogen atom.Type: ApplicationFiled: January 5, 2023Publication date: May 18, 2023Inventors: Tadashi YOSHIHASHI, Guntur Venkata Subbarao, Kazuhiko Nakahara, Hiroshi Ono
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Publication number: 20230136603Abstract: The subject of the present invention is to provide a resin material in which woody biomass and a thermoplastic resin are uniformly mixed, and which is easy to mold. The present invention provides a molding resin material comprising 40 to 90% by mass of a pulverized product from a woody biomass-derived torrefied product having an average particle size of 100 ?m or less, and further comprising a thermoplastic resin.Type: ApplicationFiled: March 26, 2021Publication date: May 4, 2023Inventors: Hiroshi Ono, Kei Matsumoto, Yoichi Ishino
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Publication number: 20230093066Abstract: The present invention provides a polarization-independent terahertz wave control element, and provides a method for manufacturing a polarization-independent terahertz wave control element.Type: ApplicationFiled: December 25, 2020Publication date: March 23, 2023Applicants: NAGAOKA UNIVERSITY OF TECHNOLOGY, UNIVERSITY OF HYOGO, NISSAN CHEMICAL CORPORATIONInventors: Tomoyuki SASAKI, Hiroshi ONO, Nobuhiro KAWATSUKI, Kohei GOTO, Kimiaki TSUTSUI
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Publication number: 20230078716Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.Type: ApplicationFiled: November 15, 2022Publication date: March 16, 2023Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Toshiki HIKOSAKA, Hiroshi ONO, Jumpei TAJIMA, Masahiko KURAGUCHI, Shinya NUNOUE
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Publication number: 20230068711Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, first and second insulating members, and a first nitride member. A position of the third electrode in a first direction from the first to second electrodes is between positions of the first and second electrodes in the first direction. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The second semiconductor portion includes first and second portions, and a third portion between the first and second portions. The first conductive member includes first and second conductive regions. The first insulating member includes a first insulating region. The second insulating member includes first and second insulating portions. The first nitride member includes a first nitride region.Type: ApplicationFiled: March 1, 2022Publication date: March 2, 2023Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Daimotsu KATO, Yosuke KAJIWARA, Hiroshi ONO, Aya SHINDOME, Akira MUKAI, Po-Chin HUANG, Masahiko KURAGUCHI, Tatsuo SHIMIZU
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Publication number: 20230061811Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, first and second insulating members, a compound member, and a nitride member. The third electrode is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes first and second insulating portions. The first semiconductor portion is between the fourth partial region and the first insulating portion. The second semiconductor portion is between the fifth partial region and the second insulating portion. The compound member includes first to third compound portions. The nitride member includes first to third nitride portions. The second insulating member includes first and second insulating regions.Type: ApplicationFiled: March 1, 2022Publication date: March 2, 2023Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Daimotsu KATO, Hiroshi ONO, Yosuke KAJIWARA, Aya SHINDOME, Akira MUKAI, Po-Chin HUANG, Masahiko KURAGUCHI, Tatsuo SHIMIZU
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Publication number: 20230038118Abstract: A method for correcting a synthesized speech set for hearing aid according to an aspect of the present invention includes the steps of outputting first synthesized speech for testing on the basis of first synthesized speech data for testing correlated with a first phoneme label in a synthesized speech set for testing, accepting a first answer selected by a user, outputting second synthesized speech for testing on the basis of second synthesized speech data for testing correlated with a second phoneme label in the synthesized speech set for testing, accepting a second answer selected by the user, and correlating first synthesized speech data for hearing aid with the second phoneme label instead of second synthesized speech data for hearing aid in a synthesized speech set for hearing aid, in a case in which the first answer matches the second phoneme label and also the second answer does not match the second phoneme label.Type: ApplicationFiled: February 7, 2020Publication date: February 9, 2023Applicant: SPACE LIVE. Inc.Inventor: Hiroshi ONO
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Patent number: 11563114Abstract: According to one embodiment, a semiconductor device includes first, second, third electrodes, a semiconductor member, and a first compound member. The third electrode is between the first and second electrodes in a first direction from the first to second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. A second direction from the first partial region to the first electrode crosses the first direction. The fourth partial region is between the first and third partial regions in the first direction. The fifth partial region is between the third and second partial regions in the first direction. The second semiconductor region includes first and second semiconductor portions. The first compound member includes first, second and third compound regions.Type: GrantFiled: January 26, 2021Date of Patent: January 24, 2023Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Matthew David Smith, Hiroshi Ono, Yosuke Kajiwara, Akira Mukai, Masahiko Kuraguchi
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Patent number: 11560517Abstract: A photoreactive liquid crystal composition containing (A) a photoreactive polymer liquid crystal which includes a photoreactive side chain in which at least one type of reaction selected from (A-1) photocrosslinking and (A-2) photoisomerization occurs, and (B) a low molecular weight liquid crystal. An optical element or display element is formed having a liquid crystal cell including the photoreactive liquid crystal composition.Type: GrantFiled: July 7, 2020Date of Patent: January 24, 2023Assignees: UNIVERSITY OF HYOGO, NAGAOKA UNIVERSITY OF TECHNOLOGY, NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Tomoyuki Sasaki, Hiroshi Ono, Nobuhiro Kawatsuki, Kohei Goto
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Patent number: 11545553Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor layer, a second semiconductor layer, and a first insulating layer. A position of the third electrode in a first direction is between a position of the first electrode in the first direction and a position of the second electrode in the first direction. The first semiconductor layer includes Alx1Ga1-x1N and includes a first partial region, a second partial region, and a third partial region. The second semiconductor layer includes Alx2Ga1-x2N. A portion of the second semiconductor layer is between the third partial region and the third electrode in the second direction. The first insulating layer includes a first insulating region. The first insulating region is between the third electrode and the portion of the second semiconductor layer in the second direction.Type: GrantFiled: November 3, 2021Date of Patent: January 3, 2023Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Toshiki Hikosaka, Hiroshi Ono, Jumpei Tajima, Masahiko Kuraguchi, Shinya Nunoue
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Patent number: 11524284Abstract: An exhaust gas purification device has a metal substrate and a catalyst layer on the metal substrate, wherein the metal substrate is a wound body of one or a plurality of metal foils, at least one of the one or a plurality of metal foils is a perforated metal foil having holes, the catalyst layer contains noble metal catalyst particles and a carrier for carrying the noble metal catalyst particles, and more noble metal catalyst particles are present in the catalyst layer on side surfaces of holes, which face an upstream side of an exhaust gas flow, than in the catalyst layer on side surfaces of holes, which face a downstream side of the exhaust gas flow.Type: GrantFiled: September 14, 2018Date of Patent: December 13, 2022Assignee: CATALER CORPORATIONInventors: Kohei Takasaki, Yuji Matsuhisa, Nobuaki Bando, Hiroshi Ono, Tomohito Mizukami, Tsuyoshi Ito
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Publication number: 20220388216Abstract: The subject of the present invention is to provide a resin material in which woody biomass and a thermoplastic resin are uniformly mixed, and which is easy to mold. The present invention provides a molding resin material containing a pulverized product from a woody biomass-derived torrefied product and a thermoplastic resin.Type: ApplicationFiled: December 10, 2020Publication date: December 8, 2022Inventors: Hiroshi Ono, Kei Matsumoto, Yoichi Ishino, Koichi Kimura
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Publication number: 20220336630Abstract: According to one embodiment, a semiconductor device includes a semiconductor member, a first conductive member, a first electrode, a first insulating member, and a second insulating member. The semiconductor member includes a first partial region, a second partial region, and a third partial region. The first partial region is between the second partial region the third partial region. The first conductive member includes a first conductive portion. The first conductive portion is between the second partial region and the third partial region. The first electrode is electrically connected to the first conductive member. The first electrode includes a first electrode portion, a second electrode portion, and a third electrode portion. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The second insulating member includes a first insulating portion and a second insulating portion.Type: ApplicationFiled: November 10, 2021Publication date: October 20, 2022Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hiroshi ONO, Yosuke KAJIWARA, Masahiko KURAGUCHI
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Patent number: 11476336Abstract: According to one embodiment, a semiconductor device includes first, second and third electrodes, first and second semiconductor layers, and a first compound member. A position of the third electrode is between a position of the second electrode and a position of the first electrode. The first semiconductor layer includes first, second, third, fourth, and fifth partial regions. The fourth partial region is between the third and first partial regions. The fifth partial region is between the second and third partial regions. The second semiconductor layer includes first, second, and third semiconductor regions. The third semiconductor region is between the first partial region and the first electrode. The first compound member includes first compound portions between the third semiconductor region and the first electrode. A portion of the first electrode is between one of the first compound portions and an other one of the first compound portions.Type: GrantFiled: February 11, 2020Date of Patent: October 18, 2022Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATIONInventors: Hiroshi Ono, Akira Mukai, Yosuke Kajiwara, Daimotsu Kato, Aya Shindome, Masahiko Kuraguchi
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Publication number: 20220310301Abstract: In the multi-layer inductor, all of the plurality of through conductors are not aligned in a straight line, and the distance between the through conductors can be sufficiently kept in the element body having a predetermined dimensional standard. Therefore, the through conductor as a heat source is apart from each other, and the heat of the through conductor can be efficiently radiated to the outside of the element body.Type: ApplicationFiled: March 16, 2022Publication date: September 29, 2022Applicant: TDK CorporationInventors: Akihiko OIDE, Makoto YOSHINO, Tomoki OKADA, Seiji OSADA, Yuuki OKAZAKI, Takeshi SASAKI, Mitsuru ITO, Kenta SASAKI, Kazuhiro EBINA, Takashi ABE, Hiroshi ONO
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Publication number: 20220310299Abstract: In the multi-layer inductor, the internal electrode includes the auxiliary conductor, and the auxiliary conductor is jointed to the external electrode at the end face. Therefore, when a defect occurs in a part of the through conductors, a current flows through the remaining through conductor(s) and a current also flows through the auxiliary conductor. Therefore, overheating at the joint surface between the remaining through conductor(s) and the external electrode can be prevented, and cutting and/or fusion starting from the joint surface can be prevented.Type: ApplicationFiled: March 17, 2022Publication date: September 29, 2022Applicant: TDK CorporationInventors: Akihiko OIDE, Makoto YOSHINO, Tomoki OKADA, Seiji OSADA, Yuuki OKAZAKI, Takeshi SASAKI, Mitsuru ITO, Kenta SASAKI, Kazuhiro EBINA, Takashi ABE, Hiroshi ONO
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Publication number: 20220231155Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, first and second semiconductor regions, first and second insulating members. The third electrode includes a first electrode portion. The first electrode portion is between the first electrode and the second electrode. The first semiconductor region includes first to fifth partial regions. The fourth partial region is between the first and third partial regions. The fifth partial region is between the third and second partial regions. The second semiconductor region includes first and second semiconductor portions. The first insulating member includes a first insulating portion. The first insulating portion is between the third and first electrode portions. The second insulating member includes first and second insulating regions. The first insulating region is between the first electrode and the first electrode portion. The second insulating region is between the first insulating region and the first electrode portion.Type: ApplicationFiled: August 10, 2021Publication date: July 21, 2022Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yosuke KAJIWARA, Hiroshi ONO, Daimotsu KATO, Akira MUKAI, Masahiko KURAGUCHI