Abstract: A member for semiconductor manufacturing apparatus includes a ceramic plate having a wafer placement surface on its upper surface and a built-in electrostatic electrode; a base plate provided on a lower surface of the ceramic plate; a passage provided from a lower surface of the base plate to the wafer placement surface of the ceramic plate; an internal electrode provided inside the ceramic plate so as to be located in a periphery of the passage under the electrostatic electrode; a switcher coupled to the internal electrode, and configured to switch between whether the internal electrode is electrically coupled to the electrostatic electrode; and a bias electrode provided at a height lower than or equal to a height of the internal electrode electrically independently from the electrostatic electrode, and configured to receive application of a bias voltage when plasma is generated over the wafer placement surface.

Abstract: A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface on its upper surface and a built-in electrostatic electrode; a base plate provided on a lower surface of the ceramic plate, and configured to include a built-in refrigerant flow path; a passage provided from a lower surface of the base plate to the wafer placement surface of the ceramic plate; at least one inner electrode provided inside the ceramic plate so as to be located in a periphery of the passage under the electrostatic electrode and not to be exposed to an inner wall of the passage, the at least one inner electrode being electrically coupled to the electrostatic electrode; and a bias electrode provided electrically independently from the electrostatic electrode at a height equal to or lower than a height of a lowermost inner electrode of the at least one inner electrode.

Abstract: A hot stamped body, including: a steel material; and a plated layer, wherein a chemical composition of the plated layer contains, in mass %, 0 to 70% of Al, 10 to 60% of Fe, 0 to 20% of Si, and a C-group element being any one kind or two kinds of Li and Y, with a content of 0.00001 to 0.3% in total, and optionally further contains any one kind or two or more kinds of Sb, Pb, B, Cu, Ti, Cr, Nb, Ni, Mn, Mo, Ag, Co, Sn, and Bi, and a remainder being of Zn and an impurity, wherein the plated layer contains an n-Zn phase or a Zn-containing phase is used.

Abstract: A ceramic heater with a shaft includes: a ceramic plate in which resistance heating element is embedded; a hollow ceramic shaft bonded to the surface on an opposite side of a wafer placement surface of the ceramic plate; a conductive film provided in an axial direction to extend on the internal circumferential surface of the ceramic shaft; a recessed section provided to reach a terminal of the resistance heating element from the surface on the opposite side of the wafer placement surface of the ceramic plate, the recessed section having a bottom surface to which a lower surface of the terminal is exposed and a lateral surface to which a surface of the conductive film is exposed; and a connection member which is filled in the recessed section, and electrically connects the lower surface of the terminal and the surface of the conductive film.

Abstract: Provided is a plated steel sheet comprising a base steel sheet and a plating layer formed on a surface of the base steel sheet, wherein the plating layer has a predetermined chemical composition, and when measuring the plating layer by X-ray diffraction, a peak intensity I(002) derived from a (002) plane of an ? phase and a peak intensity I(101) derived from a (101) plane of the ? phase satisfy 0<I(002)/I(101)?1000.

Abstract: This hot-dip Zn-based plated steel sheet includes a steel sheet and a plating layer formed on at least part of a surface of the steel sheet, in which the plating layer has a chemical composition that includes, by mass %, Al: 6.00% to 35.00%, Mg: 2.00% to 12.00%, Ca: 0.005% to 2.00%, Si: 0% to 2.00%, Fe: 0% to 2.00%, Sb: 0% to 0.50%, Sr: 0% to 0.50%, Pb: 0% to 0.50%, Sn; 0% to 1.00%, Cu: 0% to 1.00%, Ti: 0% to 1.00%, Ni: 0% to 1.00%, Mn: 0% to 1.00%, Cr: 0% to 1.00%, and a remainder: Zn and impurities; the plating layer has an area ratio of a MgZn2 phase in a range of 15% to 60% in a cross section in a thickness direction, and the MgZn2 phase includes a Ca-based intermetallic compound having a circle equivalent diameter of 0.10 ?m or smaller.

Abstract: Provided is a welded joint comprising a plurality of steel sheets stacked together, a spot weld having a nugget joining the plurality of steel sheets, and a pressure weld and heat affected zone formed around the nugget, and a separation part positioned around the pressure weld, wherein one or more of the plurality of steel sheets is a plated steel sheet comprising a base steel sheet and a plating layer formed on at least a surface corresponding to a stacking surface of the plurality of steel sheets of surfaces of the base steel sheet, the plating layer at the separation part at an outside of the heat affected zone has a predetermined chemical composition, and at the plating layer of the separation part of a region up to 500 m from an end of the pressure weld, a ratio of an area ratio of an ? phase with respect to a total of area ratios of the ? phase and ? phase is 10 to 100%.

Abstract: An electrostatic chuck includes a ceramic plate through holes which penetrate the plate, and a pair of positive and negative electrodes. The plate has division areas virtually divided, which are equal in number to the number of the through holes. The positive electrode and the negative electrode have pairs of positive and negative helical electrode portions, and for each of the division areas, one of the pairs is provided in parallel so as to cover the entirety of the division area from each of a positive electrode start point and a negative electrode start point which are close to one of the through holes. The positive electrode is such that the positive helical electrode portions are connected via outer circumferential portions of the plate, and the negative electrode is such that the negative helical electrode portions are connected via a central portion of the plate.

Abstract: A member for semiconductor manufacturing apparatus includes: an upper plate that has a wafer placement surface, contains no electrode, and is a ceramic material plate; an intermediate plate that is provided on a surface of the upper plate, opposite to the wafer placement surface, that is used as an electrostatic electrode, and that is a conductive material plate; and a lower plate that is joined to a surface of the intermediate plate, opposite to the surface on which the upper plate is provided, and that is a ceramic material plate.

Abstract: A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.

Abstract: An electrostatic chuck heater includes an electrostatic chuck including an electrostatic electrode embedded in a ceramic sintered body, a cooling member cooling the electrostatic chuck, and a heater layer disposed between the electrostatic chuck and the cooling member and including a plurality of metal layers embedded therein in multiple stages, the metal layers including resistance heating element layers. The heater layer includes a ceramic insulating layer with a thickness of 2 ?m or more and 50 ?m or less between the metal layers.

Abstract: Steel sheet and plated steel sheet comprised of steel sheet with a thin thickness in which sufficient strength and plateability or chemical convertibility are both achieved, i.e., steel sheet having a chemical composition containing, by mass %, C: 0.05 to 0.30%, Si: 0.01 to 2.50%, Mn: 0.80 to 3.00%, Al: 0.010 to 2.000%, etc. and having a balance comprising Fe and impurities and having a thickness of 0.4 to 2.0 mm, in which steel sheet, a tensile strength is 550 to 1500 MPa, an internal oxidation layer and decarburized layer are contained, when a thickness of the decarburized layer per side of the steel sheet: A (?m), a bulk C concentration of the steel sheet: Cb (%), and a thickness of the steel sheet: t (mm), 0.01?A/t?0.15, and a C concentration at the ½A position is Cb/2 or more and plated steel sheet using that steel sheet.

Abstract: There is provided an electrostatic chuck assembly including: an electrode-embedded ceramic plate; a cooling plate that supports a bottom surface of the ceramic plate and has an internal space of an annular or arcuate shape; an internal fixation member of an annular or arcuate shape accommodated in the internal space so as to be rotatable about a central axis of the cooling plate; female threads in a multiple of n, which is an integer of 2 or more, spaced apart from each other in the internal fixation member; and n insertion holes for insertion of bolts for being fixed to a chamber, the insertion holes each being provided at the bottom of the cooling plate such that one set of n female threads is exposed. Each of the female threads is disposed such that another set of n female threads is exposed in the insertion holes when rotated.

Abstract: Provided is a plated steel sheet comprising a base steel sheet and a plating layer formed on a surface of the base steel sheet, wherein the plating layer has a predetermined chemical composition, and when measuring the plating layer by glow discharge spectroscopy (GDS), a ratio of “Al concentration at center of plating layer”/“Al concentration at position of plating layer where Fe concentration is 50% of base steel sheet” is 0.10 to 1.50.

Abstract: A wafer placement table includes a ceramic base including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding the ceramic base and the cooling base, a stepped hole penetrating the bonding layer and the cooling base and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and a connection terminal bonded to the electrode and inserted through the stepped insulating pipe.

Abstract: This plated steel sheet includes a base steel sheet, a plated layer formed on a surface of the base steel sheet, and an oxide film formed on a surface of the plated layer, the plated layer has a chemical composition containing Sc: 0.000010 to 4.0% in mass %, and has a cross section, in the thickness direction, in which the area fraction of an intermetallic compound phase containing Sc and having an equivalent circle diameter of 5.0 ?m or less is 0.1 to 10.0%, and the oxide film has a thickness of 10 nm or more.

Abstract: A plated steel sheet comprises a plated layer on a surface of a steel sheet, in which in the plated layer, the total amount ?A of Sn, Bi, and In is less than 0.75%, the total amount ?B of Ca, Y, La, and Ce is 0.03 to 0.60%, the total amount ?C of Cr, Ti, Ni, Co, V, Nb, Cu, and Mn is 0 to 1.00%, Sn?Si, and 20.0?Mg/Si are satisfied, and in an X-ray diffraction pattern of a surface of the plated layer, an X-ray diffraction peak of Al2.15Zn1.85Ca, an X-ray diffraction peak of CaZn2, and an X-ray diffraction peak of ??-MgZn2 satisfy a predetermined relationship.

Abstract: The hot-dip plated steel material includes a steel material and a hot-dip plated layer disposed on a surface of the steel material, the hot-dip plated layer has a certain chemical composition, and the hot-dip plated layer has a diffraction intensity obtained from a result of X-ray diffraction measurement, the diffraction intensity satisfying a certain relationship.

Abstract: High strength steel sheet and plated steel sheet having high plateability, LME resistance, and hydrogen embrittlement resistance, that is, steel sheet containing C: 0.05 to 0.40%, Si: 0.2 to 3.0%, Mn: 0.1 to 5.0%, and sol. Al: 0.4 to 1.50%, having an internal oxidation layer including fine granular oxides, coarse granular oxides, and grain boundary oxides in a surface layer of the steel sheet, a number density of fine granular oxides in the internal oxidation layer being 4.0/?m2 or more, a number density of coarse granular oxides in the internal oxidation layer being 4.0/25 ?m2 or more, having a Ratio A of the length of the grain boundary oxides projected on the surface of the steel sheet to the length of the surface of the steel sheet when examining a cross-section of the surface layer of the steel sheet being 50% or more and 100% or less, and including a surface depleted layer with a steel composition not including oxides which satisfies, by mass %, Si?0.6% and Al?0.

Abstract: The present invention relates to a plated steel sheet for hot stamping comprising a steel sheet and a Zn—Ni plating layer formed on at least one surface of the steel sheet, wherein the Zn—Ni plating layer has an Ni concentration of 8 mass % or more, a plating deposition amount of 10 g/m2 or more and 90 g/m2 or less per surface, and an average grain size of 50 nm or less.