Abstract: This hot-dip Zn-based plated steel sheet includes a steel sheet and a plating layer formed on at least part of a surface of the steel sheet, in which the plating layer has a chemical composition that includes, by mass %, Al: 6.00% to 35.00%, Mg: 2.00% to 12.00%, Ca: 0.005% to 2.00%, Si: 0% to 2.00%, Fe: 0% to 2.00%, Sb: 0% to 0.50%, Sr: 0% to 0.50%, Pb: 0% to 0.50%, Sn: 0% to 1.00%, Cu: 0% to 1.00%, Ti: 0% to 1.00%, Ni: 0% to 1.00%, Mn: 0% to 1.00%, Cr: 0% to 1.00%, and a remainder: Zn and impurities, the plating layer has an area ratio of a MgZn2 phase in a range of 15% to 60% in a cross section in a thickness direction, and the MgZn2 phase includes a Ca-based intermetallic compound having a circle equivalent diameter of 0.10 ?m or smaller.

Abstract: This plated steel includes: a steel; and a plating layer formed on the steel, in which the plating layer contains, as a chemical composition, by mass %, Zn: 1.0% to 30.0%, Mg: 0% to 10.0%, Si: 0.05% to 10.0%, Fe: 0 to 10.0%, 0% to 5.00% in total of one or two or more selected from Ca: 0% to 3.00%, Sb: 0% to 0.50%, Pb: 0% to 0.50%, Sr: 0% to 0.50%, Sn: 0% to 1.00%, Cu: 0% to 1.00%, Ti: 0% to 1.00%, Ni: 0% to 1.00%, Mn: 0% to 1.00%, Cr: 0% to 1.00%, La: 0% to 1.00%, Ce: 0% to 1.00%, Zr: 0% to 1.00%, and Hf: 0% to 1.00%, and a remainder of Al and impurities, a microstructure of the plating layer contains an ? phase which is a solid solution of Al and Zn, and the ? phase contains a Zn phase having a grain size of 10 to 200 nm in a number density of 10/100 ?m2 or more.

Abstract: High strength steel sheet and plated steel sheet having high plateability, LME resistance, and hydrogen embrittlement resistance, that is, steel sheet containing C: 0.05 to 0.40%, Si: 0.2 to 3.0%, Mn: 0.1 to 5.0%, and sol. Al: 0.4 to 1.50%, having an internal oxidation layer including fine granular oxides, coarse granular oxides, and grain boundary oxides in a surface layer of the steel sheet, a number density of fine granular oxides in the internal oxidation layer being 4.0/?m2 or more, a number density of coarse granular oxides in the internal oxidation layer being 4.0/25 ?m2 or more, having a Ratio A of the length of the grain boundary oxides projected on the surface of the steel sheet to the length of the surface of the steel sheet when examining a cross-section of the surface layer of the steel sheet being 50% or more and 100% or less, and including a surface depleted layer with a steel composition not including oxides which satisfies, by mass %, Si?0.6% and Al?0.

Abstract: An electrostatic chuck heater according to the present invention includes an alumina substrate having a wafer placement surface on its upper surface; an electrostatic electrode, a resistance heating element provided for each zone, and a multilayer jumper wire for supplying power to the resistance heating element, which are buried in the alumina substrate in this order from the wafer placement surface side; a heating element coupling via for vertically coupling the resistance heating element to the jumper wire; and a power supply via extending outward for supplying power to the jumper wire. At least the heating element coupling via and the power supply via contain ruthenium metal.

Abstract: A plated steel sheet for automobile structural members has a steel sheet, a plating layer formed on at least a part of a surface of the steel sheet, and an oxide layer formed on at least a part of a surface of the plating layer, the plating layer has a predetermined chemical composition, and when measurement by XPS is performed at a position 5.0 nm below a surface of the oxide layer in a thickness direction. IMg/IMgOx, which is the ratio of a maximum detected intensity of Mg to a maximum detected intensity of an oxide or hydroxide of Mg, is 0.00 or greater and 1.20 or less.

Abstract: A hot-dip plated steel includes a base steel and a hot-dip plating layer on a surface of the base steel, a chemical composition of the hot-dip plating layer contains, by mass %, Al: 10.00% to 30.00%, Mg: 3.00% to 12.00%, Sn: 0% to 2.00%, Si: 0% to 2.50%, Ca: 0% to 3.00%, Ni: 0% or more and less than 0.25%, Fe: 0% to 5.00%, and the like, a remainder includes Zn and impurities, a metallographic structure of the hot-dip plating layer contains 5 to 45 area % of an ? phase having a grain diameter of 0.5 to 2 ?m, the metallographic structure of the hot-dip plating layer contains 15 to 70 area % of a MgZn2 phase, and, among the ? phases having the grain diameter of 0.5 to 2 ?m, an area ratio of an ? phase having a (111)?//(0001)MgZn2 orientation relationship to the adjacent MgZn2 phase is 25% to 100%.

Abstract: A wafer placement device includes a wafer placement stage including a wafer electrostatic chuck and a wafer cooling plate, a focus-ring placement stage including a focus-ring electrostatic chuck and a focus-ring cooling plate, and a clamping member arranged around the focus-ring placement stage. The wafer placement stage, the focus-ring placement stage, and the clamping member are separate from one another. A pressing portion of the focus-ring cooling plate presses a wafer cooling plate flange against a mounting plate. The clamping member is fastened to the mounting plate with bolts in a state of pressing a flange against the mounting plate at its flange, thus fixing the wafer placement stage and the focus-ring placement stage to the mounting plate without directly fastening them to the mounting plate.

Abstract: A ceramic heater includes a ceramic plate, a planar electrode, and a resistive heating element. A first via, a second via, a coupler, and a reinforcement portion are embedded in the ceramic plate. The first via is conductive and extends from the resistive heating element toward a via through-hole. The second via is conductive and extends from the via through-hole in a direction opposite a direction toward the resistive heating element. The coupler is conductive and electrically couples the first via and the second via with each other. The reinforcement portion is disposed inside the via through-hole 16 between the coupler and an inner circumferential surface around the via through-hole and is composed of a material that is the same as the material of the ceramic plate.

Abstract: A member for semiconductor manufacturing apparatus includes an upper plate that has a wafer placement surface, that contains an electrostatic electrode and an upper auxiliary electrode parallel to each other, and that comprises ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite a surface joined to the upper plate with a second metal joining layer interposed therebetween and that contains a heater electrode and a lower auxiliary electrode parallel to each other.

Abstract: The wafer placement table includes a ceramic plate and a conductive substrate. The ceramic plate includes a plate annular portion at an outer circumference of a plate central portion having a wafer placement surface. The plate annular portion has an annular focus ring placement surface. The conductive substrate is provided on a lower surface of the ceramic plate and used as a radio-frequency source electrode. At the same height from the focus ring placement surface in the plate annular portion, a focus ring attraction electrode and a focus-ring-side radio-frequency bias electrode to which a bias radio frequency is supplied are embedded.

Abstract: A plated steel sheet includes: a steel sheet; and a plating layer that is formed on at least a part of a surface of the steel sheet, in which a chemical composition of the plating layer includes, b mass %, Al: 6.00% to 35.00 %, Mg: 3.00% to 15.00%, La+Ce: 0.0001% to 0.5000% in total, and Zn, and in a surface of the plating layer, the area ratio of a lamellar structure in which an (Al—Zn) phase and a MgZn2 phase are arranged in layers is 10% to 95%, the lamellar spacing of the lamellar structure is 2.5 ?m or less, and the area ratio of an (Al—Zn) dendrite is 10% or less.

Abstract: A member for a semiconductor manufacturing apparatus, includes: a base substrate that has a wafer-placement-table support and a focus-ring-placement-table support; a focus-ring placement table that is joined to the focus-ring-placement-table support; a wafer placement table that is separate from the focus-ring placement table, that overlaps an inner peripheral portion of the focus-ring placement table in plan view, and that is joined to the inner peripheral portion of the focus-ring placement table and to the wafer-placement-table support; an internal space that is surrounded by a lower surface of the wafer placement table, an outer peripheral surface of the wafer-placement-table support, an inner peripheral surface of the focus-ring placement table, and an upper surface of the focus-ring-placement-table support; and a communication path that is provided at the base substrate and that causes the internal space and an outside of the base substrate to communicate with each other.

Abstract: A feeder member includes an electrode-side terminal, an insert, a connector, and a cable. The electrode-side terminal is made of a high-melting-point metal containing material, and is joined to an electrode embedded in a ceramic base. Each of the insert, the connector and the cable is made of a Cu containing material. The insert has a joined portion that is directly joined to the electrode-side terminal without using a brazing material, and a hole portion that is provided on a side opposite to the joined portion. The connector has a socket portion that is electrically connected to a conductive member differing from the feeder member, and a recessed portion that is provided on a side opposite to the socket portion. The cable has one end joined to the hole portion of the insert, and the other end joined to the recessed portion of the connector.

Abstract: A plated steel sheet having excellent chemical convertibility includes: a steel; and a plating layer that is provided on a surface of the steel, in which the plating layer includes, by mass %, Al: 5.00% to 35.00%, Mg: 2.50% to 13.00%, Fe: 5.00% to 35.00%, Si: 0% to 2.00%, Ca: 0.03% to 2.00%, and a remainder consisting of Zn and impurities, and in a surface of the plating layer, the area fraction of a Fe—Al phase is 0% to 30%, the area fraction of a rod-like lamellar structure of Zn and MgZn2 is 5% to 90%, the area fraction of a massive MgZn2 phase is 10% to 70%, and the area fraction of a remainder is 10% or less.

Abstract: This Zn-plated hot stamped product includes a steel, a Zn-based plating layer, and an oxide layer, in which an upper layer which is a region on a surface side of the Zn-based plating layer has a two-phase structure of a ? phase and an Fe—Zn solid solution, and a lower layer which is a region of the Zn-based plating layer excluding the upper layer has a single-phase structure of an Fe—Zn solid solution, an upper layer thickness and a lower layer thickness satisfy the following expression, a Mn content ratio of Max. Mn/Min. Mn, which is a ratio of a maximum value Max. Mn to a minimum value Min. Mn of an Mn content on a surface of the Zn-plated hot stamped product, is 10.0 or less, and an average value Ave. Mn is 0.5 to 7.5% by mass %. 0.20?upper layer thickness/(upper layer thickness+lower layer thickness)?0.

Abstract: A wafer placement table includes a ceramic base, an electrode (FR attraction electrode), a bonding terminal (power supply terminal), and an electrode lead-out portion. The ceramic base has an upper surface serving as a wafer placement surface. The FR attraction electrode is embedded in the ceramic base. The power supply terminal is inserted into the ceramic base from a lower surface of the ceramic base and penetrates a through-hole formed in the FR attraction electrode. The electrode lead-out portion is provided at each of two or more positions at intervals along a peripheral edge of the through-hole to be thicker than the FR attraction electrode and has an inner peripheral surface bonded to a side surface of the power supply terminal.

Abstract: A plated steel includes: a steel; and a plating layer that is provided on a surface of the steel, in which the plating layer includes, by mass %, Al: 5.00% to 35.00%, Mg: 2.50% to 13.00%, Fe: 5.00% to 40.00%, Si: 0% to 2.00%, Ca: 0% to 2.00%, and a remainder of Zn and impurities, and in a cross section of the plating layer, the area fraction of a Zn solid-solution Fe2Al5 phase in which 5% or more of Zn is solid-soluted is 10% to 60% and the area fraction of a MgZn2 phase is 10% to 90%.

Abstract: A hot-dip plated steel according to one aspect includes a base steel and a hot-dip plating layer disposed on a surface of the base steel, a chemical composition of the hot-dip plating layer contains, by mass%, Al: 10.00% to 30.00%, Mg: 3.00% to 12.00%, Sn: 0% to 2.00%, Si: 0% to 2.50%, Ca: 0% to 3.00%, Ni: 0% or more and less than 0.25%, Fe: 0% to 5.00%, and the like, a remainder consists of Zn and impurities, a metallographic structure of the hot-dip plating layer contains 5 to 45 area% of an ? phase having a grain diameter of 0.5 to 2 µm, the metallographic structure of the hot-dip plating layer contains 15 to 70 area% of a MgZn2 phase, and, among the ? phases having the grain diameter of 0.5 to 2 µm, an area ratio of an ? phase having a (111)?//(0001)MgZn2 orientation relationship to the adjacent MgZn2 phase is 25% to 100%.

Abstract: A wafer placement table includes a ceramic substrate having a wafer placement surface on an upper surface thereof and containing an electrode therein, a cooling substrate made of a metal-ceramic composite and having a cooling medium passage therein, and a metal joining layer configured to join a lower surface of the ceramic substrate to an upper surface of the cooling substrate. A thickness of a lower part of the cooling substrate below the cooling medium passage is greater than or equal to 13 mm, or greater than or equal to 43% of an overall thickness of the cooling substrate.

Abstract: A member for semiconductor manufacturing apparatus includes: an upper plate that has a wafer placement surface, contains no electrode, and is a ceramic material plate; an intermediate plate that is provided on a surface of the upper plate, opposite to the wafer placement surface, that is used as an electrostatic electrode, and that is a conductive material plate; and a lower plate that is joined to a surface of the intermediate plate, opposite to the surface on which the upper plate is provided, and that is a ceramic material plate.