Abstract: An electrostatic chuck heater is such that a sheet heater formed by embedding a heater wire in a resin sheet is disposed between an electrostatic chuck and a support pedestal. The heater wires are provided one for each of many zones of the resin sheet, and are composed of copper wires routed unicursally from their first ends to their second ends so as to extend throughout the zones.

Abstract: A wafer placement device includes a wafer placement stage including a wafer electrostatic chuck and a wafer cooling plate, a focus-ring placement stage including a focus-ring electrostatic chuck and a focus-ring cooling plate, and a clamping member arranged around the focus-ring placement stage. The wafer placement stage, the focus-ring placement stage, and the clamping member are separate from one another. A pressing portion of the focus-ring cooling plate presses a wafer cooling plate flange against a mounting plate. The clamping member is fastened to the mounting plate with bolts in a state of pressing a flange against the mounting plate at its flange, thus fixing the wafer placement stage and the focus-ring placement stage to the mounting plate without directly fastening them to the mounting plate.

Abstract: A hot-dip galvanized cold-rolled steel sheet has a tensile strength of 750 MPa or higher, a composition consisting, in mass percent, C: more than 0.10% and less than 0.25%, Si: more than 0.50% and less than 2.0%, Mn: more than 1.50% and 3.0% or less, and optionally containing one or more types of Ti, Nb, V, Cr, Mo, B, Ca, Mg, REM, and Bi, P: less than 0.050%, S: 0.010% or less, sol. Al: 0.50% or less, and N: 0.010% or less, and a main phase as a low-temperature transformation product and a second phase as retained austenite. The retained austenite volume fraction is more than 4.0% and less than 25.0% of the whole structure, and has an average grain size of less than 0.80 ?m. A number density of retained austenite grains having a grain size of 1.2 ?m or more is 3.0×10?2/?m2 or less.

Abstract: A metal wiring bonding structure 100 comprises contacts 753 of connection FPC 75 and heater lands 46 of a sheet heater 30 to be bonded by a solder bonding member 766. A connection FPC 75 includes contact opposed lands 754 famed of metal and disposed at positions respectively opposed to the plurality of contacts 753 on a surface of a support layer 751 opposite from a surface on which metal wires 750 are provided, and through holes 755 penetrating the contact opposed lands 754, the support layer 751, and contacts 753. Solder bonding members 756 cover surfaces of contact opposed lands 754 and are filled inside through holes 755 and in a bonding space C.

Abstract: A connection FPC 75 and a sheet heater 30 are joined together with a solder joint member interposed therebetween. The connection FPC 75 includes a ground contact point 90b and a connection electrode 90d extending along a row of contact points and to which the ground contact point 90b is connected. The connection electrode 90d extends beyond both ends of the row. The sheet heater 30 includes a ground land 46b and a connection land 46d extending along a row of lands and to which the ground land 46b is connected. The connection land 46d extends beyond both ends of the row.

Abstract: A member for a semiconductor manufacturing apparatus includes a plate, at least one through hole, and an insulating pipe (cylindrical member). The plate is formed of an alumina sintered body, has a front surface serving as a wafer placement surface, and includes therein an electrode. The through hole penetrates through the plate in a thickness direction. The insulating pipe is formed of an alumina sintered body and is joined to a rear surface of the plate with a first joining layer having a ring shape and formed of an alumina sintered body interposed between the insulating pipe and the rear surface of the plate.

Abstract: A ceramic heater includes a disk-shaped ceramic plate with an upper surface defining a wafer placement surface on which a wafer is to be placed. One or more inner-peripheral-side heater elements are embedded in an inner peripheral zone of the ceramic plate, and one or more outer-peripheral-side heater elements are embedded in an outer peripheral zone of the ceramic plate. A thickness of the ceramic plate in a predetermined zone is 3.9% or less of a diameter of the ceramic plate. The predetermined zone is a zone including a boundary line between the inner peripheral zone and the outer peripheral zone.

Abstract: Provided is a hot stamped body which includes a base metal, and a plated layer formed on a surface of the base metal, wherein the plated layer includes an interface layer, an intermediate layer, and an oxide layer in order from a base metal side, the interface layer contains one or more kinds of Fe—Al alloy, a total area fraction of the Fe—Al alloy being 99% or more, the intermediate layer 22 contains one or more kinds of Fe—Al—Zn alloy, a total area fraction of the Fe—Al—Zn phase being 50% or more, an average composition of the intermediate layer contains, in mass %, Al: 30 to 50% and Zn: 15 to 30%, and an average film thickness of the oxide layer is 3.0 ?m or less, and Mg content in the oxide layer is 0.05 to 0.50 g/m2.

Abstract: Provided is a surface treated steel sheet which includes a base metal, and a plated layer formed on a surface of the base metal, wherein an average composition of the plated layer contains, in mass %, Mg: 0.5 to 2.0%, and [60.0?Zn+Al?98.0], [0.4?Zn/Al?1.5], and [Zn/Al×Mg?1.6] are satisfied.

Abstract: In a ceramic heater, a central-zone heating resistor and an outer-peripheral-zone heating resistor are embedded in a disc-like ceramic base having a wafer-mounting surface on one side. The central-zone heating resistor is a wire extending in a single continuous line from one of a pair of terminals to the other. The pair of terminals as a whole form a circular shape in plan view.

Abstract: An electrostatic chuck heater includes an electrostatic chuck in which an electrostatic electrode is embedded in a ceramic sintered body; a small-zone formation region including a plurality of small zones in which small heater electrodes are wired; a power source to which the plurality of small heater electrodes are connected in parallel; and a small-zone control apparatus that performs control such that desired electric power is supplied to each of the small heater electrodes, wherein among the plurality of small heater electrodes, a small heater electrode that is wired in a small zone including a cool spot has a resistance that is set to a smaller value than that of the other small heater electrodes.

Abstract: A shaft-end mounting structure according to the present invention is a structure to mount an end of a hollow ceramic shaft 20 in a gastight manner on a circumference of a through hole 104 in a base plate 102 of a chamber 100, the shaft 20 being integrated with a ceramic plate 12 on which a wafer is to be placed. A ring member 26 is connected in a gastight manner to an end face of the shaft 20 with a metal layer 28 provided therebetween, the member 26 being composed of a metal material or a metal-ceramic composite material. Bolts 32 extend through the base plate 102 and a metal seal 30 and fasten the member 26 so as to draw the member 26 toward the base plate 102 while the member 26 is placed on the circumference of the through hole 104 with the seal 30 provided therebetween.

Abstract: A wafer support structure includes a ceramic tray plate having a plurality of wafer placement portions in which wafers are placed, and arranged on an upper surface of a ceramic base plate. The base plate incorporates a base-side electrode, and the tray plate incorporates a tray-side electrode. In the wafer support structure, voltages applied to the base-side electrode and the tray-side electrode are adjusted in a state where the wafers are placed in the wafer placement portions. As a result, an electrostatic force acting to attract the base plate and the tray plate to each other is generated, and an electrostatic force acting to attract the tray plate and the wafers to each other is generated.

Abstract: A hot stamped steel according to one embodiment of the present invention includes a base material and a plated layer, wherein the plated layer includes an interface layer, an intermediate layer, and an oxide layer in order from a base material side to a surface side; in which compositions and thicknesses of each layer are controlled.

Abstract: An electrostatic chuck heater 20 includes an electrostatic chuck 22, a sheet heater 30, and a support pedestal 60. The electrostatic chuck 22 is obtained by embedding an electrostatic electrode 24 in a ceramic sintered body 26. The sheet heater 30 is a resin sheet 32 having a plurality of correction heater electrodes 34 and a plurality of base heater electrodes 44. A first surface of the sheet heater 30 is resin-bonded to the electrostatic chuck 22, and a second surface of the sheet heater 30 is resin-bonded to the support pedestal 60 made of metal.

Abstract: An electrostatic chuck heater includes a disc-shaped ceramic base and a plurality of heating elements embedded in the ceramic base. A top surface of the electrostatic chuck heater, which serves as a wafer mounting surface, is divided into multiple zones. The heating elements, which each include terminals that are embedded in the ceramic base in the respective zones. Terminal collection regions are provided on a bottom surface of the electrostatic chuck heater. The number of terminal collection regions is smaller than the total number of heating elements. The terminals of each of the heating elements are connected to one of the terminal collection regions through the ceramic base.

Abstract: A metal wiring bonding structure 100 comprises contacts 753 of connection FPC 75 and heater lands 46 of a sheet heater 30 to be bonded by a solder bonding member 766. A connection FPC 75 includes contact opposed lands 754 formed of metal and disposed at positions respectively opposed to the plurality of contacts 753 on a surface of a support layer 751 opposite from a surface on which metal wires 750 are provided. In addition to base surfaces 461 opposed to the contacts 753, the heater lands 46 respectively include extended surfaces 462 opposed to imaginary extended portions 753b imaginarily extended ahead from the contacts 753. A solder bonding member 756 covers surfaces of the contact opposed lands 754, a distal end surface of the connection FPC 75, and the extended surfaces 462 of the heater lands 46, and is filled in a bonding space C.

Abstract: A ceramic heater includes a disk-shaped ceramic plate with an upper surface defining a wafer placement surface on which a wafer is to be placed. One or more inner-peripheral-side heater elements are embedded in an inner peripheral zone of the ceramic plate, and one or more outer-peripheral-side heater elements are embedded in an outer peripheral zone of the ceramic plate. A thickness of the ceramic plate in a predetermined zone is 3.9% or less of a diameter of the ceramic plate. The predetermined zone is a zone including a boundary line between the inner peripheral zone and the outer peripheral zone.