Abstract: A plated steel sheet includes: a steel sheet; and a plating layer that is formed on at least a part of a surface of the steel sheet, in which a chemical composition of the plating layer includes, by mass %, Al: more than 5.00% and 35.00% or less, Mg: 3.00% to 15.00%, Si: 0% to 2.00%, Ca: 0% to 2.00%, and a remainder of Zn and impurities, in which in a cross section of the plating layer in a thickness direction, the area ratio of a lamellar structure in which an (Al—Zn) phase and a MgZn2 phase are arranged in layers is 10% to 90%, a lamellar spacing of the lamellar structure is 2.5 ?m or less, and the area ratio of an (Al—Zn) dendrite is 35% or less.

Abstract: A wafer placement table includes a ceramic base including an electrode, a cooling base including a coolant flow path formed therein, a bonding layer bonding the ceramic base and the cooling base, a stepped hole penetrating the bonding layer and the cooling base and including an upper hole portion with a small diameter, a lower hole portion with a large diameter, and a hole stepped portion between the upper hole portion and the lower hole portion, the upper hole portion passing through a region in which the coolant flow path is formed, a stepped insulating pipe inserted through the stepped hole and including an upper pipe portion with a small diameter, a lower pipe portion with a large diameter, and a pipe stepped portion between the upper pipe portion and the lower pipe portion; and a connection terminal bonded to the electrode and inserted through the stepped insulating pipe.

Abstract: A wafer placement table is a wafer placement table that includes a refrigerant flow channel through which refrigerant is flowed and includes a top base including a ceramic base incorporating an electrode and having a wafer placement surface on a top surface of the ceramic base, a bottom base on a top surface of which a flow channel groove defining a side wall and a bottom of the refrigerant flow channel is provided, and a seal member disposed between the top base and the bottom base so as to seal the refrigerant flow channel from an outside.

Abstract: A wafer placement table includes a ceramic base having a wafer placement surface on its top surface and incorporating an electrode, a cooling base in which a refrigerant flow channel is formed, and a metal bonding layer that bonds the ceramic base with the cooling base. The cooling base includes a ceiling base made of a metal matrix composite material or a low thermal expansion metal material and defining a ceiling of the refrigerant flow channel, a grooved base of which a main component is made of the same ceramic material as a main component of the ceramic base and on a top surface of which a flow channel groove defining a bottom and a side wall of the refrigerant flow channel is provided, and a metal ceiling bonding layer that bonds a bottom surface of the ceiling base with the top surface of the grooved base.

Abstract: A plated steel sheet for hot stamping including a base metal and a galvanized layer that is formed on a surface of the base metal, wherein the galvanized layer includes a galvannealed layer, a solidified zinc layer, and an oxide layer containing Al, in this order from the base metal, and a proportion of a content of Zn (g/m2) in the solidified zinc layer to a content of Zn (g/m2) in the galvanized layer is 10 to 95%.

Abstract: A wafer placement table includes a ceramic base, a first cooling base, and a second cooling base. The ceramic base has a wafer placement surface and incorporates a wafer attracting electrode and a heater electrode. The first cooling base is bonded via a metal bonding layer to a surface of the ceramic base on a side opposite to the wafer placement surface and has a first refrigerant flow channel capable of switching between supply and stop of supply of first refrigerant. The second cooling base is attached via a space layer, capable of supplying heat-transfer gas, to a surface of the first cooling base on a side opposite to the metal bonding layer and has a second refrigerant flow channel capable of switching between supply and stop of supply of second refrigerant.

Abstract: A wafer placement table includes a ceramic base, a cooling base, and a bonding layer. The ceramic base includes an outer peripheral part having an annular focus ring placement surface on an outer peripheral side of a central part having a circular wafer placement surface. The cooling base contains metal. The bonding layer bonds the ceramic base with the cooling base. The outer peripheral part of the ceramic base has a thickness of less than or equal to 1 mm and does not incorporate an electrode.

Abstract: A plated steel sheet having excellent post-coating corrosion resistance includes: a steel; and a plating layer that is provided on a surface of the steel, in which the plating layer includes, by mass %, Al: 5.00% to 35.00%, Mg: 2.50% to 13.00%, Fe: 5.00% to 35.00%, Si: 0% to 2.00%, Ca: 0% to 2.00%, and a remainder consisting of Zn and impurities, and in a cross section of the plating layer, the area fraction of a Fe2Al5 phase is 5.0% to 60.0%, the area fraction of an eutectic structure of Zn and MgZn2 is 10.0% to 80.0%, the area fraction of a massive MgZn2 phase is 5.0% to 40.0%, and the area fraction of a remainder is 10.0% or less.

Abstract: In a ceramic heater, a central-zone heating resistor and an outer-peripheral-zone heating resistor are embedded in a disc-like ceramic base having a wafer-mounting surface on one side. The central-zone heating resistor is a wire extending in a single continuous line from one of a pair of terminals to the other. The pair of terminals as a whole form a circular shape in plan view.

Abstract: A member for a semiconductor manufacturing apparatus includes a plate, at least one through hole, and an insulating pipe (cylindrical member). The plate is formed of an alumina sintered body, has a front surface serving as a wafer placement surface, and includes therein an electrode. The through hole penetrates through the plate in a thickness direction. The insulating pipe is formed of an alumina sintered body and is joined to a rear surface of the plate with a first joining layer having a ring shape and formed of an alumina sintered body interposed between the insulating pipe and the rear surface of the plate.

Abstract: A hot stamped steel includes a base material, a plated layer that is formed on a surface of the base material, and an oxide film that is formed on a surface of the plated layer; chemical composition of the plated layer contains 20.00 to 45.00 mass % of Al, 10.00 to 45.00 mass % of Fe, 4.50 to 15.00 mass % of Mg, 0.10 to 3.00 mass % of Si, 0.05 to 3.00 mass % of Ca, 0 to 0.50 mass % of Sb, 0 to 0.50 mass % of Pb, 0 to 1.00 mass % of Cu, 0 to 1.00 mass % of Sn, 0 to 1.00 mass % of Ti, 0 to 0.50 mass % of Sr, 0 to 1.00 mass % of Cr, 0 to 1.00 mass % of Ni, and 0 to 1.00 mass % of Mn with a remainder of Zn and impurities; and chemical composition of the oxide film contains 20.0 to 55.0 at % of Mg, 0.5 to 15.0 at % of Ca, 0 to 15.0 at % of Zn, and 0 at % or more and less than 10.0 at % of Al with a remainder of O and a total of 5.0 at % or less of impurities, and the adhesion amount of the oxide film per one surface is in a range of 0.01 to 10 g/m2.

Abstract: A hot stamped steel includes a base material that is formed of steel, a plated layer that is formed on a surface of the base material, and a phosphate coating that is formed on a surface of the plated layer; chemical composition of the plated layer contains 20.00 to 45.00 mass % of Al, 10.00 to 45.00 mass % of Fe, 4.50 to 15.00 mass % of Mg, 0.10 to 3.00 mass % of Si, 0.05 to 3.00 mass % of Ca, 0 to 0.50 mass % of Sb, 0 to 0.50 mass % of Pb, 0 to 1.00 mass % of Cu, 0 to 1.00 mass % of Sn, 0 to 1.00 mass % of Ti, 0 to 0.50 mass % of Sr, 0 to 1.00 mass % of Cr, 0 to 1.00 mass % of Ni, and 0 to 1.00 mass % of Mn with a remainder of Zn and impurities; the phosphate coating consists of zinc phosphate crystals containing 5.0 to 50.0 mass % of Mg and 0.5 to 5.0 mass % of Ca; and the adhesion amount of the phosphate coating per one surface is in a range of 0.1 to 10.0 g/m2.

Abstract: A member for semiconductor manufacturing apparatus includes an upper plate that has a wafer placement surface, that contains an electrostatic electrode and an upper auxiliary electrode parallel to each other, and that comprises ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite a surface joined to the upper plate with a second metal joining layer interposed therebetween and that contains a heater electrode and a lower auxiliary electrode parallel to each other.

Abstract: Provided is an electrode including: a current, collector; an electrode material mixture; and an electrode tab, the current collector being a porous metal body having a region A and a region B with a porosity lower than that of the region A, the region A having pores filled with the electrode material mixture, the electrode tab being fixed on the region B, the region A having a subregion A1 and a subregion A2 with a porosity lower than that of the subregion A1, the subregion A2 being more distant from the electrode tab than the subregion A1. Also provided is an electricity storage device including the electrode.

Abstract: The present invention relates to a plated steel sheet for hot stamping comprising a steel sheet and a Zn—Ni plating layer formed on at least one surface of the steel sheet, wherein the Zn—Ni plating layer has an Ni concentration of 8 mass % or more, a plating deposition amount of 10 g/m2 or more and 90 g/m2 or less per surface, and an average grain size of 50 nm or more, and a difference between a diffraction peak of the Zn—Ni plating layer after heat treating the plated steel sheet for hot stamping at 200° C. for 1 hour, and a diffraction peak of the Zn—Ni plating layer before heat treating it, is 0.3° or less.

Abstract: The present invention relates to a plated steel sheet for hot stamping comprising a steel sheet and a Zn—Ni plating layer formed on at least one surface of the steel sheet, wherein the Zn—Ni plating layer has an Ni concentration of 8 mass % or more, a plating deposition amount of 10 g/m2 or more and 90 g/m2 or less per surface, and an average grain size of 50 nm or less.

Abstract: A semiconductor-manufacturing apparatus member includes an upper plate that has a wafer placement surface having a concave shape or a convex shape, that contains an electrostatic electrode, and that is composed of ceramics; an intermediate plate that is joined to a surface of the upper plate opposite the wafer placement surface with a first metal joining layer interposed therebetween; and a lower plate that is joined to a surface of the intermediate plate opposite the surface that is joined to the upper plate with a second metal joining layer interposed therebetween, wherein a thermal expansion coefficient of the intermediate plate is larger than thermal expansion coefficients of the upper plate and the lower plate.

Abstract: A plated steel includes: a steel; and a plating layer that is provided on a surface of the steel, in which the plating layer includes, by mass %, Al: 5.00% to 35.00%, Mg: 2.50% to 13.00%. Fe: 5.00% to 40.00%, Si: 0% to 2.00%, Ca: 0% to 2.00%, and a remainder of Zn and impurities, and in a cross section of the plating layer, the area fraction of a Zn solid-solution Fe2Al5 phase in which 5% or more of Zn is solid-soluted is 10% to 60% and the area fraction of a MgZn2 phase is 10% to 90%.

Abstract: A plated steel sheet includes: a steel sheet; and a plating layer that is formed on at least a part of a surface of the steel sheet, in which a chemical composition of the plating layer includes, by mass %, Al: more than 5.00% and 35.00% or less, Mg: 3.00% to 15.00%, Si: 0% to 2.00%, Ca: 0% to 2.00%, and a remainder of Zn and impurities, in which in a cross section of the plating layer in a thickness direction, the area ratio of a lamellar structure in which an (Al—Zn) phase and a MgZn2 phase are arranged in layers is 10% to 90%, a lamellar spacing of the lamellar structure is 2.5 ?m or less, and the area ratio of an (Al—Zn) dendrite is 35% or less.

Abstract: A plated steel sheet having excellent chemical convertibility includes: a steel; and a plating layer that is provided on a surface of the steel, in which the plating layer includes, by mass %, Al: 5.00% to 35.00%, Mg: 2.50% to 13.00%, Fe: 5.00% to 35.00%, Si: 0% to 2.00%, Ca: 0.03% to 2.00%, and a remainder consisting of Zn and impurities, and in a surface of the plating layer, the area fraction of a Fe—Al phase is 0% to 30%, the area fraction of a rod-like lamellar structure of Zn and MgZn2 is 5% to 90%, the area fraction of a massive MgZn2 phase is 10% to 70%, and the area fraction of a remainder is 10% or less.