Abstract: A ceramic heater includes a disk-shaped ceramic plate with an upper surface defining a wafer placement surface on which a wafer is to be placed. One or more inner-peripheral-side heater elements are embedded in an inner peripheral zone of the ceramic plate, and one or more outer-peripheral-side heater elements are embedded in an outer peripheral zone of the ceramic plate. A thickness of the ceramic plate in a predetermined zone is 3.9% or less of a diameter of the ceramic plate. The predetermined zone is a zone including a boundary line between the inner peripheral zone and the outer peripheral zone.

Abstract: An electrostatic chuck heater includes an electrostatic chuck in which an electrostatic electrode is embedded in a ceramic sintered body; a small-zone formation region including a plurality of small zones in which small heater electrodes are wired; a power source to which the plurality of small heater electrodes are connected in parallel; and a small-zone control apparatus that performs control such that desired electric power is supplied to each of the small heater electrodes, wherein among the plurality of small heater electrodes, a small heater electrode that is wired in a small zone including a cool spot has a resistance that is set to a smaller value than that of the other small heater electrodes.

Abstract: Hot-stamped steel includes: a steel base metal including a tempered portion having hardness corresponding to 85% or less of the highest quenching hardness defined as a Vickers hardness at a depth position spaced away from a surface layer by ¼ times a sheet thickness in a case of performing water quenching after heating at a temperature equal to or higher than an Ac3 point and retention for 30 minutes; and a Zn coating layer formed on the tempered portion of the base metal. The Zn coating layer includes a solid-solution layer including a solid-solution phase containing Fe and Zn that is solid-soluted in Fe, and a lamella layer including solid-solution phase and a capital gamma phase. In the Zn coating layer, an area ratio of the lamella layer is 30 to 100% and an area ratio of the solid-solution layer is 0 to 70%.

Abstract: A method for producing a member for a semiconductor manufacturing apparatus 10 includes (a) a step of providing an electrostatic chuck 20, a supporting substrate 30, and a metal bonding material 401, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10?6/K or less in absolute value, and (b) a step of interposing the metal bonding material 401 between a concave face 32 of the supporting substrate 30 and a face 23 of the electrostatic chuck 20 opposite to a wafer mounting face 22, and thermocompression bonding the supporting substrate 30 and the electrostatic chuck 20 at a predetermined temperature to deform the electrostatic chuck 20 to the shape of the concave face 32.

Abstract: Hot-stamped steel includes: a base metal that is steel including a tempered portion having hardness corresponding to 85% or less of the highest quenching hardness, the highest quenching hardness being defined as a Vickers hardness at a depth position spaced away from a surface by ¼ times a sheet thickness in a case of performing water quenching after heating at a temperature equal to or higher than an Ac3 point and retention for 30 minutes; and a Zn coating layer that is formed on the tempered portion of the base metal. The Zn coating layer includes a solid-solution layer including a solid-solution phase that contains Fe and Zn that is solid-soluted in Fe, and a lamella layer that includes the solid-solution phase and a capital gamma phase. An area ratio of the lamella layer in the Zn coating layer is 20% or less.

Abstract: An electrostatic chuck heater is such that a sheet heater formed by embedding a heater wire in a resin sheet is disposed between an electrostatic chuck and a support pedestal. The heater wires are provided one for each of many zones of the resin sheet, and are composed of copper wires routed unicursally from their first ends to their second ends so as to extend throughout the zones.

Abstract: A connection FPC 75 and a sheet heater 30 are joined together with a solder joint member interposed therebetween. The connection FPC 75 includes a ground contact point 90b and a connection electrode 90d extending along a row of contact points and to which the ground contact point 90b is connected. The connection electrode 90d extends beyond both ends of the row. The sheet heater 30 includes a ground land 46b and a connection land 46d extending along a row of lands and to which the ground land 46b is connected. The connection land 46d extends beyond both ends of the row.

Abstract: A connection FPC 75 includes a plurality of metal wires 750 between a support layer 751 and a covering layer 752, and an exposed region including contacts 753 serving as end portions of the metal wires 750 is exposed from the covering layer 752. A bending-position guide 760 is provided on the surface of the support layer 751 opposite from the surface on which the metal wires 750 are provided. An edge 760a of the bending-position guide 760 serves as a bending line along which the connection FPC 75 is bent and is disposed in a covering-layer projection area E where the covering layer 752 is projected on the support layer 751. The connection FPC 75 is bent at portions of the metal wires 750 covered with the covering layer 752, that is, at reinforced portions.

Abstract: An electrostatic chuck heater 10 includes a disc-shaped ceramic base 30 and a plurality of heating elements 20 embedded in the ceramic base 30. A top surface 12 of the electrostatic chuck heater 10, which serves as a wafer Mounting surface, is divided into multiple zones. The heating elements 20, which each include terminals 22 and 24, are embedded in the ceramic base 30 in the respective zones. Terminal collection regions 16 are provided on a bottom surface 14 of the electrostatic chuck heater 10. The number of terminal collection regions 16 (eight in this example) is smaller than the total number of heating elements 20. The terminals 22 and 24 of each of the heating elements 20 are connected to one of the terminal collection regions 16 through the ceramic base 30.

Abstract: A metal wiring bonding structure 100 comprises contacts 753 of connection FPC 75 and heater lands 46 of a sheet heater 30 to be bonded by a solder bonding member 766. A connection FPC 75 includes contact opposed lands 754 famed of metal and disposed at positions respectively opposed to the plurality of contacts 753 on a surface of a support layer 751 opposite from a surface on which metal wires 750 are provided, and through holes 755 penetrating the contact opposed lands 754, the support layer 751, and contacts 753. Solder bonding members 756 cover surfaces of contact opposed lands 754 and are filled inside through holes 755 and in a bonding space C.

Abstract: A metal wiring bonding structure 100 comprises contacts 753 of connection FPC 75 and heater lands 46 of a sheet heater 30 to be bonded by a solder bonding member 766. A connection FPC 75 includes contact opposed lands 754 formed of metal and disposed at positions respectively opposed to the plurality of contacts 753 on a surface of a support layer 751 opposite from a surface on which metal wires 750 are provided. In addition to base surfaces 461 opposed to the contacts 753, the heater lands 46 respectively include extended surfaces 462 opposed to imaginary extended portions 753b imaginarily extended ahead from the contacts 753. A solder bonding member 756 covers surfaces of the contact opposed lands 754, a distal end surface of the connection FPC 75, and the extended surfaces 462 of the heater lands 46, and is filled in a bonding space C.

Abstract: An electrostatic chuck heater 20 includes an electrostatic chuck 22, a sheet heater 30, and a support pedestal 60. The electrostatic chuck 22 is obtained by embedding an electrostatic electrode 24 in a ceramic sintered body 26. The sheet heater 30 is a resin sheet 32 having a plurality of correction heater electrodes 34 and a plurality of base heater electrodes 44. A first surface of the sheet heater 30 is resin-bonded to the electrostatic chuck 22, and a second surface of the sheet heater 30 is resin-bonded to the support pedestal 60 made of metal.

Abstract: A shaft-end mounting structure according to the present invention is a structure to mount an end of a hollow ceramic shaft 20 in a gastight manner on a circumference of a through hole 104 in a base plate 102 of a chamber 100, the shaft 20 being integrated with a ceramic plate 12 on which a wafer is to be placed. A ring member 26 is connected in a gastight manner to an end face of the shaft 20 with a metal layer 28 provided therebetween, the member 26 being composed of a metal material or a metal-ceramic composite material. Bolts 32 extend through the base plate 102 and a metal seal 30 and fasten the member 26 so as to draw the member 26 toward the base plate 102 while the member 26 is placed on the circumference of the through hole 104 with the seal 30 provided therebetween.

Abstract: Hot-stamped steel includes: a base metal that is steel including a tempered portion having hardness corresponding to 85% or less of the highest quenching hardness, the highest quenching hardness being defined as a Vickers hardness at a depth position spaced away from a surface by ¼ times a sheet thickness in a case of performing water quenching after heating at a temperature equal to or higher than an Ac3 point and retention for 30 minutes; and a Zn coating layer that is formed on the tempered portion of the base metal. The Zn coating layer includes a solid-solution layer including a solid-solution phase that contains Fe and Zn that is solid-soluted in Fe, and a lamella layer that includes the solid-solution phase and a capital gamma phase. An area ratio of the lamella layer in the Zn coating layer is 20% or less.

Abstract: Hot-stamped steel includes: a base metal that is steel including a tempered portion having hardness corresponding to 85% or less of the highest quenching hardness, the highest quenching hardness being defined as a Vickers hardness at a depth position spaced away from a surface layer by ¼ times a sheet thickness in a case of performing water quenching after heating at a temperature equal to or higher than an Ac3 point and retention for 30 minutes; and a Zn coating layer that is formed on the tempered portion of the base metal. The Zn coating layer includes a solid-solution layer including a solid-solution phase that contains Fe and Zn that is solid-soluted in Fe, and a lamella layer that includes the solid-solution phase and a capital gamma phase. In the Zn coating layer, an area ratio of the lamella layer is 30 to 100% and an area ratio of the solid-solution layer is 0 to 70%.

Abstract: There are provided a hot-dip galvanized steel pipe in which the plating layer thereof is less liable to peel off even if the steel pipe is worked, and a method of manufacturing the hot-dip galvanized steel pipe. The hot-dip galvanized steel pipe includes a steel pipe and the plating layer formed on the surface of the steel pipe. Throughout the entire depth of plating layer, the fn defined by the following formula is at least 99.9: fn=Fe+Al+Zn where, the symbol of an element in the formula represents the content (mass %) of that element in the plating layer.

Abstract: A wafer support structure 10 includes a ceramic tray plate 12 having a plurality of wafer placement portions 14 in which wafers W are placed, and arranged on an upper surface of a ceramic base plate 20. The base plate 20 incorporates a base-side electrode 22, and the tray plate 12 incorporates a tray-side electrode 18. In the wafer support structure 10, voltages applied to the base-side electrode 22 and the tray-side electrode 18 are adjusted in a state where the wafers W are placed in the wafer placement portions 14. As a result, an electrostatic force acting to attract the base plate 20 and the tray plate 12 to each other is generated, and an electrostatic force acting to attract the tray plate 12 and the wafers W to each other is generated.

Abstract: A hot-dip galvanized cold-rolled steel sheet has a tensile strength of 750 MPa or higher, a composition consisting, in mass percent, of C: more than 0.10% and less than 0.25%, Si: more than 0.50% and less than 2.0%, Mn: more than 1.50% and 3.0% or less, and optionally containing one or more types of Ti, Nb, V, Cr, Mo, B, Ca, Mg, REM, and Bi, P: less than 0.050%, S: 0.010% or less, sol. Al: 0.50% or less, and N: 0.010% or less, and a main phase as a low-temperature transformation product and a second phase as retained austenite. The retained austenite volume fraction is more than 4.0% and less than 25.0% of the whole structure, and has an average grain size of less than 0.80 ?m. A number density of retained austenite grains having a grain size of 1.2 ?m or more is 3.0?10?2/?m2 or less.

Abstract: A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.