Patents by Inventor Hiroyuki Uchiyama

Hiroyuki Uchiyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070187783
    Abstract: Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET. Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented.
    Type: Application
    Filed: April 18, 2007
    Publication date: August 16, 2007
    Inventors: Hiroshi Kujirai, Kousuke Okuyama, Kazuhiro Hata, Kiyonori Oyu, Ryo Nagai, Hiroyuki Uchiyama, Takahiro Kumauchi, Teruhisa Ichise
  • Publication number: 20070161177
    Abstract: A semiconductor device of the present invention comprises a memory cell area having memory cells arranged in an array form, each of which includes a capacitor for storing data and a peripheral circuit area for accessing the memory cell area. The peripheral circuit area is provided with a plurality of wiring layers and each of the memory cells has a capacitor. The capacitor is comprised of a plate electrode, a capacitive insulating film formed on a side wall of an opening formed through the plate electrode, and a storage electrode embedded in the opening in which the capacitive insulating film is formed on the side wall, such that the plate electrodes, the capacitive insulating films, and the storage electrodes of the memory cells are arranged in correspondence to the plurality of wiring layers, and the storage electrodes are connected to one another.
    Type: Application
    Filed: January 11, 2007
    Publication date: July 12, 2007
    Applicant: Elpida Memory, Inc.
    Inventor: Hiroyuki Uchiyama
  • Patent number: 7242273
    Abstract: The MEMS switch comprises a first anchor formed over a substrate, a first spring connected to the first anchor, an upper electrode which is connected to the first spring and makes a motion above the substrate, elastically deforming the first spring, a lower electrode formed over the substrate, positioned under the upper electrode, a second spring connected to the upper electrode, and a second anchor connected to the second spring. When voltage is applied between the upper and lower electrodes and the upper electrode makes a downward motion, the second anchor is brought into contact with the substrate. As a result, the second spring is elastically deformed. When the upper electrode is subsequently brought into contact with the lower electrode, thereby the upper and lower electrodes are electrically connected. The first and second anchors, first and second springs, and upper electrode are formed of identical metal in integral structure.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: July 10, 2007
    Assignee: Hitachi Media Electronics Co., Ltd.
    Inventors: Atsushi Isobe, Akihisa Terano, Kengo Asai, Hiroyuki Uchiyama, Hisanori Matsumoto
  • Patent number: 7239416
    Abstract: A cellular phone is connected to a portable printer which uses an instant print film through connectors, and the printer prints an image according to image data stored in the cellular phone. The cellular phone can display the image to be printed on its LCD. The user can input information for the printing with push buttons of the cellular phone, and display the information on the LCD. Thus, the portable printer does not need an LCD and push buttons, and therefore the printer is small, light and inexpensive.
    Type: Grant
    Filed: March 12, 2001
    Date of Patent: July 3, 2007
    Assignee: Fujifilm Corporation
    Inventors: Hiroshi Ohmura, Ko Aosaki, Hiroyuki Uchiyama, Seiji Takada, Hiroshi Soma, Chiaki Fujii, Seimei Ushiro
  • Patent number: 7224034
    Abstract: Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET: Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented.
    Type: Grant
    Filed: November 2, 2004
    Date of Patent: May 29, 2007
    Assignee: Elpida Memory, Inc.
    Inventors: Hiroshi Kujirai, Kousuke Okuyama, Kazuhiro Hata, Kiyonori Oyu, Ryo Nagai, Hiroyuki Uchiyama, Takahiro Kumauchi, Teruhisa Ichise
  • Patent number: 7222932
    Abstract: The present invention provides a compact printer that can print images of high quality even if the images are printed successively. A temperature at the time of turn-on is detected by a temperature sensor, and a CPU estimates the temperature of an exposure head at the start of exposure based on the detected temperature. The CPU creates print data by referring to a look-up table in accordance with the estimated temperature and drives the exposure head in accordance with the print data, thereby forming a latent image on an instant film sheet.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: May 29, 2007
    Assignee: Fujifilm Corporation
    Inventor: Hiroyuki Uchiyama
  • Patent number: 7209170
    Abstract: In order to reduce the frame rate, when all photodiodes contributing to output of a video signal in a CMOS image sensor must be simultaneously exposed (at the timing of strobe flashing ?ts), as in a case where strobe is flashed, readout pixels composing the CMOS type image sensor are thinned such that the number of photodiodes contributing to the video signal outputted from the CMOS type image sensor is reduced. A time period ?tp2 required for processing (of the video signal caused by a row of photodiodes) in an analog processing circuit connected to the succeeding stage of the CMOS type image sensor is shortened, thereby reducing the frame rate.
    Type: Grant
    Filed: December 27, 2002
    Date of Patent: April 24, 2007
    Assignee: Fujifilm Corporation
    Inventors: Naoyuki Nishino, Hiroyuki Uchiyama, Takaaki Kotani, Soichiro Kimura
  • Patent number: 7209155
    Abstract: Temperature is detected by a temperature sensor disposed near a recording head. When the detection result is a temperature that is higher than room temperature, an appropriate movement amount of the recording head is calculated from a relation between response speed of the temperature sensor and a LED light amount, and a moving speed of the recording head is controlled. When the result of the detection by the temperature sensor is a temperature that is lower than room temperature, an appropriate exposure amount is calculated from the relation between the response speed of the temperature sensor and the LED light amount, and the amount of light emitted by LEDs is controlled.
    Type: Grant
    Filed: January 22, 2003
    Date of Patent: April 24, 2007
    Assignee: FujiFilm Corporation
    Inventors: Hiroyuki Uchiyama, Mutsumi Naruse, Soichiro Kimura
  • Publication number: 20070073448
    Abstract: A semiconductor device capable of overcoming a drawback due to the shape of a concave portion present in the zinc blende type compound semiconductor substrate in which the area of the bottom is larger than the surface in the cross sectional shape, as well as a manufacturing method thereof. A hole or step present in the semiconductor substrate constituting the semiconductor device is formed into a normal mesa shape irrespective of the orientation of the crystals on the surface of the semiconductor substrate. A wet etching solution having an etching rate for a portion below the etching mask higher than that in the direction of the depth of the semiconductor substrate is used.
    Type: Application
    Filed: October 20, 2006
    Publication date: March 29, 2007
    Inventors: Chisaki Takubo, Hiroji Yamada, Kazuhiro Mochizuki, Kenichi Tanaka, Tomonori Tanoue, Hiroyuki Uchiyama
  • Publication number: 20070063315
    Abstract: A large area dummy pattern DL is formed in a layer underneath a target T2 region formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Ds2 in an upper layer are disposed in a region where the inter-pattern space of a pattern (active regions L1, L2, L3, gate electrode 17), which functions as an element of a product region PR and scribe region SR, is wide. The small area dummy pattern Ds2 in the upper layer is offset by ½ pitch relative to the small area dummy pattern Ds in the lower layer.
    Type: Application
    Filed: November 21, 2006
    Publication date: March 22, 2007
    Inventors: Hiroyuki Uchiyama, Hiraku Chakihara, Teruhisa Ichise, Michimoto Kaminaga
  • Publication number: 20070048917
    Abstract: When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
    Type: Application
    Filed: October 27, 2006
    Publication date: March 1, 2007
    Inventors: Naoki Yamamoto, Hiroyuki Uchiyama, Norio Suzuki, Eisuke Nishitani, Shin'ichiro Kimura, Kazuyuki Hozawa
  • Publication number: 20070029598
    Abstract: A manufacturing method of a semiconductor device having a highly reliable capacitor, and the semiconductor device are provided.
    Type: Application
    Filed: April 5, 2006
    Publication date: February 8, 2007
    Inventor: Hiroyuki Uchiyama
  • Patent number: 7154164
    Abstract: A large area dummy pattern DL is formed in a layer underneath a target T2 region formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Ds2 in an upper layer are disposed in a region where the inter-pattern space of a pattern (active regions L1, L2, L3, gate electrode 17), which functions as an element of a product region PR and scribe region SR, is wide. The small area dummy pattern Ds2 in the upper layer is offset by ½ pitch relative to the small area dummy pattern Ds in the lower layer.
    Type: Grant
    Filed: April 26, 2006
    Date of Patent: December 26, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Hiroyuki Uchiyama, Hiraku Chakihara, Teruhisa Ichise, Michimoto Kaminaga
  • Patent number: 7144766
    Abstract: When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
    Type: Grant
    Filed: August 8, 2005
    Date of Patent: December 5, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Naoki Yamamoto, Hiroyuki Uchiyama, Norio Suzuki, Eisuke Nishitani, Shin'ichiro Kimura, Kazuyuki Hozawa
  • Patent number: 7112870
    Abstract: A large area dummy pattern DL is formed in a layer underneath a target T2 region formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Ds2 in an upper layer are disposed in a region where the inter-pattern space of a pattern (active regions L1, L2, L3, gate electrode 17), which functions as an element of a product region PR and scribe region SR, is wide. The small area dummy pattern Ds2 in the upper layer is offset by ½ pitch relative to the small area dummy pattern Ds in the lower layer.
    Type: Grant
    Filed: January 4, 2005
    Date of Patent: September 26, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Hiroyuki Uchiyama, Hiraku Chakihara, Teruhisa Ichise, Michimoto Kaminaga
  • Publication number: 20060192270
    Abstract: A large area dummy pattern DL is formed in a layer underneath a target T2 region formed in a scribe region SR of a wafer. A small area dummy pattern in a lower layer and a small area dummy pattern Ds2 in an upper layer are disposed in a region where the inter-pattern space of a pattern (active regions L1, L2, L3, gate electrode 17), which functions as an element of a product region PR and scribe region SR, is wide. The small area dummy pattern Ds2 in the upper layer is offset by ½ pitch relative to the small area dummy pattern Ds in the lower layer.
    Type: Application
    Filed: April 26, 2006
    Publication date: August 31, 2006
    Inventors: Hiroyuki Uchiyama, Hiraku Chakihara, Teruhisa Ichise, Michimoto Kaminaga
  • Publication number: 20060186449
    Abstract: A semiconductor device and a manufacturing method thereof which enable to secure high yield and increase the capacity of a capacitor are provided. The semiconductor device according to the present invention includes: a plurality of capacitor layers laminated, each capacitor layer including a plurality of storage electrodes, a capacity insulating film covering the surface of the storage electrodes, and a plate electrode provided between the storage electrodes, wherein the plate electrode of each of the laminated capacitor layers are electrically connected to each other and the corresponding storage electrode of each of the laminated capacitor layers are electrically connected to each other.
    Type: Application
    Filed: February 1, 2006
    Publication date: August 24, 2006
    Inventor: Hiroyuki Uchiyama
  • Publication number: 20060138458
    Abstract: This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.
    Type: Application
    Filed: December 27, 2005
    Publication date: June 29, 2006
    Inventors: Kenichi Tanaka, Tomonori Tanoue, Hidetoshi Matsumoto, Hiroshi Ohta, Kazuhiro Mochizuki, Hiroyuki Uchiyama
  • Publication number: 20060118834
    Abstract: In a microwave integrated circuit, a capacitance element is connected to the input side of each active device to remove noise signals. These capacitance elements and the wires, etc. for them have prevented the miniaturization of the chip since they require large areas on the chip. Further, in the case of a semiconductor active device, particularly a field-effect transistor, the gate metal formed on the step portions of the mesa may break or the gate metal may come into contact with the active layer during the “mesa-type device separation” process, resulting in degradation in the characteristics. To overcome the above problems, the present invention provides a device configuration in which: the capacitance element is formed right under one terminal of the semiconductor device; and one of the two electrodes of the capacitance element is connected to the underside of the terminal.
    Type: Application
    Filed: December 7, 2005
    Publication date: June 8, 2006
    Inventors: Hiroshi Ohta, Hiroyuki Uchiyama
  • Patent number: 7049187
    Abstract: When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
    Type: Grant
    Filed: October 31, 2001
    Date of Patent: May 23, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Naoki Yamamoto, Hiroyuki Uchiyama, Norio Suzuki, Eisuke Nishitani, Shin'ichiro Kimura, Kazuyuki Hozawa