Patents by Inventor Hisashi Kaneko
Hisashi Kaneko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5859746Abstract: A magnetic disk drive having one or more magnetic disks, one or more read/write heads each recording or reproducing information for a corresponding one of the magnetic disks, a servo head reading control information from a predetermined one of the magnetic disks, and an actuator supporting the one or more read/write heads and the servo head includes first leads extending from the one or more read/write heads along one side of the actuator, and second leads extending from the servo head along the other side of the actuator so that the second leads can be distanced in space from the first leads.Type: GrantFiled: August 30, 1996Date of Patent: January 12, 1999Assignee: Fujitsu LimitedInventors: Katsuaki Ishida, Mitsuhisa Sekino, Yoshiaki Nagasawa, Tomoo Sukagawa, Masaharu Sugimoto, Tsuyoshi Furukawa, Masaki Jinbo, Tsuneyori Ino, Hisashi Kaneko, Shinichi Fukuzawa
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Patent number: 5798887Abstract: A rotary driving apparatus controls the generation of vibration and noise due to high speed rotation, to realize high accuracy rotation, so that a storage apparatus such as a disk drive can have high speed rotation and improved storing density on its recording medium.The apparatus includes a fixed shaft for rotatably supporting a rotor, a bearing fitted between the shaft and the rotor, at least two projections projecting from the surface of the shaft, and a stator coil mounted on the projections. The projections absorb stator vibration, and isolate the head, the storage disk and other parts from the stator vibrations. A gap area is formed between the stator coil and the shaft to dampen vibrations created by the stator. The gap may be filled with vibration-absorbing material.Type: GrantFiled: July 25, 1995Date of Patent: August 25, 1998Assignee: Fujitsu LimitedInventors: Mitsuaki Yoshida, Hisashi Kaneko
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Patent number: 5770095Abstract: The present invention provides a polishing method including the steps of forming a film made of material containing a metal as a main component over a substrate having depressed portions on a surface thereof so as to fill the depressed portions with the film, and polishing the film by a chemical mechanical polishing method using a polishing agent containing a chemical agent responsible for forming a protection film on a surface of the film by reacting with the material containing a metal as a main component, thereby forming a conductive film in the depressed portions.Type: GrantFiled: July 11, 1995Date of Patent: June 23, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Yasutaka Sasaki, Nobuo Hayasaka, Hisashi Kaneko, Hideaki Hirabayashi, Masatoshi Higuchi
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Patent number: 5731927Abstract: A spindle assembly for a disk drive uses fewer than the maximum number of disks, reducing power consumption of a spindle motor without reducing the dust collecting ability of an air filter. The spindle assembly includes a shaft adapted to be fixed to a housing of the disk drive, and a spindle hub rotatably mounted on the shaft. A first set of disks spaced from each other a given distance is mounted on a lower portion of the spindle hub, and a second set of disks spaced from each other the above given distance is mounted on an upper portion of the spindle hub. A dummy ring is mounted on an intermediate portion of the spindle hub to define a large space between the first set and the second set. The intermediate portion does not have disks. A clamp is secured to the spindle hub by screws, thereby fixing the first and second sets of disks to the spindle hub.Type: GrantFiled: November 12, 1996Date of Patent: March 24, 1998Assignee: Fujitsu LimitedInventor: Hisashi Kaneko
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Patent number: 5709958Abstract: An electronic part comprising an amorphous thin film formed on a substrate; and a metal wiring formed on the surface of the amorphous thin film; wherein an interatomic distance corresponding to a peak of halo pattern appearing in diffraction measurement of the amorphous thin film approximately matches with a spacing of a particular crystal plane defined with the first nearest interatomic distance of the metal wiring. An electronic part provided with a metal wiring formed of highly orientated crystal wherein half or more of all grain boundaries are small angle grain boundaries defined by one of grain boundaries with a relative misorientation of 10.degree. or less in tilt, rotation and combination thereof around orientation axes of neighboring crystal grains; coincidence boundaries where a .SIGMA. value is 10 or less; and grain boundaries with a relative misorientation of 3.degree. or less from the coincidence boundary.Type: GrantFiled: May 26, 1995Date of Patent: January 20, 1998Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Toyoda, Hisashi Kaneko, Masahiko Hasunuma, Takashi Kawanoue, Hiroshi Tomita, Akihiro Kajita, Masami Miyauchi, Takashi Kawakubo, Sachiyo Ito
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Patent number: 5673159Abstract: Disclosed is a magnetic disk apparatus having a large internal accommodation space. This magnetic disk apparatus comprises a case defining accommodation space inside, magnetic disks disposed in the accommodation space, a spindle motor, magnetic heads and a rotary actuator. The case includes a cover having a first flat portion and a first upright portion standing upright on the first flat portion at a peripheral portion thereof, and a base having a second flat portion and a second upright portion standing upright on the second flat portion at a peripheral portion thereof. This design can ensure a sufficient strength even if the case is made thin, thus allowing the internal accommodation space to be increased. The magnetic disk apparatus also has a printed circuit board, which is provided at the case and has a control circuit mounted thereon for controlling the magnetic heads. The printed circuit board supplies a source voltage to the case.Type: GrantFiled: November 8, 1996Date of Patent: September 30, 1997Assignee: Fujitsu LimitedInventors: Masaki Jinbo, Tsuyoshi Furukawa, Hisashi Kaneko, Masaharu Sugimoto, Tsuneyori Ino, Shinichi Fukuzawa, Katsuaki Ishida
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Patent number: 5664989Abstract: A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.Type: GrantFiled: July 18, 1996Date of Patent: September 9, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Rempei Nakata, Hisashi Kaneko, Nobuo Hayasaka, Takeshi Nishioka, Yoshikuni Tateyama, Yutaka Nakano, Yasutaka Sasaki
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Patent number: 5661345Abstract: The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.Type: GrantFiled: December 1, 1994Date of Patent: August 26, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Junichi Wada, Hisashi Kaneko, Kyoichi Suguro, Nobuo Hayasaka, Haruo Okano
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Patent number: 5629236Abstract: The method of manufacturing a semiconductor device, according to the present invention, includes the steps of forming a polycrystal lower-level Al wiring layer on a silicon substrate, forming an interlayer insulation film for covering the lower-level Al wiring layer on the entire surface, forming a connection hole which reaches the lower-level Al wiring layer in the interlayer insulation film, forming a polycrystal upper-level Al wiring layer on a surface of the interlayer insulation film, forming an interlayer insulation film for covering the upper-level Al wiring layer on the entire surface, and forming a single-crystal lower-level Al wiring layer and upper-layer Al wiring layer which are connected to each other in the connection hole by heating the silicon substrate so that the lower-level Al wiring layer and the upper-level Al wiring layer are converted from a polycrystal phase to an amorphous phase, and then cooling the silicon substrate so that the upper-level Al wiring layer is set in a supercooling stType: GrantFiled: July 25, 1995Date of Patent: May 13, 1997Assignee: Kabushiki Kaisha ToshibaInventors: Jun-ichi Wada, Hisashi Kaneko, Nobuo Hayasaka
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Patent number: 5590001Abstract: A breather filter unit for a magnetic disk drive including a base and a cover fixed to the base, the cover having a vent. The breather filter unit includes a casing fixed to an inner surface of the cover, the casing having a vent inlet communicating with the vent of the cover and a vent outlet communicating with an inside of the magnetic disk drive, and a first filter contained in the casing at a position adjacent to the vent inlet, the first filter being formed from a plurality of fibers extending in a direction substantially parallel to that of an air flow from the vent inlet to the vent outlet. The breather filter unit further includes a second filter bonded to the casing so as to cover the vent outlet, and an activated carbon layer contained in the casing at a position between the first filter and the second filter.Type: GrantFiled: November 29, 1994Date of Patent: December 31, 1996Assignee: Fujitsu LimitedInventors: Tsuneyori Ino, Tsuyoshi Furukawa, Masaki Jinbo, Hisashi Kaneko, Shinichi Fukuzawa, Masaharu Sugimoto, Yoshiaki Nagasawa, Katsuaki Ishida, Osamu Yamazaki, Yukihiro Komura, Tomoo Sukagawa
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Patent number: 5583720Abstract: A magnetic disk drive having one or more magnetic disks, one or more read/write heads each recording or reproducing information for a corresponding one of the magnetic disks, a servo head reading control information from a predetermined one of the magnetic disks, and an actuator supporting the one or more read/write heads and the servo head includes first leads extending from the one or more read/write heads along one side of the actuator, and second leads extending from the servo head along the other side of the actuator so that the second leads can be distanced in space from the first leads.Type: GrantFiled: November 21, 1994Date of Patent: December 10, 1996Assignee: Fujitsu LimitedInventors: Katsuaki Ishida, Mitsuhisa Sekino, Yoshiaki Nagasawa, Tomoo Sukagawa, Masaharu Sugimoto, Tsuyoshi Furukawa, Masaki Jinbo, Tsuneyori Ino, Hisashi Kaneko, Shinichi Fukuzawa
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Patent number: 5498909Abstract: The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.Type: GrantFiled: August 31, 1992Date of Patent: March 12, 1996Assignee: Kabushiki Kaisha ToshibaInventors: Masahiko Hasunuma, Hisashi Kaneko, Atsuhito Sawabe, Takashi Kawanoue, Yoshiko Kohanawa, Shuichi Komatsu
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Patent number: 5409862Abstract: The method of producing a semiconductor device includes the steps of forming a groove having a predetermined pattern shape on the surface of a substrate; forming a metal film on the substrate while reaction with the surface of the substrate is suppressed; and agglomerating the metal film by in-situ annealing, wherein agglomeration of the metal film is started before the metal film reacts with the surface of the substrate due to annealing, while formation of a native oxide on the metal film is suppressed, and whereby the metal film is filled into the groove by annealing at a predetermined temperature for a predetermined period of time. The structure of the semiconductor device includes an insulator in which there is formed a groove portion having a predetermined pattern shape and an electrode interconnection made of a single-crystal metal which is filled in the groove portion.Type: GrantFiled: March 22, 1993Date of Patent: April 25, 1995Assignee: Kabushiki Kaisha ToshibaInventors: Junichi Wada, Hisashi Kaneko, Kyoichi Suguro, Nobuo Hayasaka, Haruo Okano
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Patent number: 5187561Abstract: The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.Type: GrantFiled: June 29, 1990Date of Patent: February 16, 1993Assignee: Kabushiki Kaisha ToshibaInventors: Masahiko Hasunuma, Hisashi Kaneko, Atsuhito Sawabe, Takashi Kawanoue, Yoshiko Kohanawa, Shuichi Komatsu