Patents by Inventor Hisashi Kawafuji
Hisashi Kawafuji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10796979Abstract: A power module includes: a power chip; a control chip controlling the power chip; a power terminal connected to the power chip; a control terminal connected to the control chip; and a package covering the power chip, the control chip, the power terminal, and the control terminal with mold resin, wherein first and second recesses for attaching a fin are respectively provided on side faces facing each other of the package from which neither the power terminal nor the control terminal protrudes, and the first and second recesses are arranged not at positions opposite to each other but alternately.Type: GrantFiled: April 16, 2018Date of Patent: October 6, 2020Assignee: Mitsubishi Electric CorporationInventors: Maki Hasegawa, Shuhei Yokoyama, Shigeru Mori, Hisashi Kawafuji
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Patent number: 10741472Abstract: A power module includes: a power chip; a control chip controlling the power chip; a power terminal connected to the power chip; a control terminal connected to the control chip; and a package covering the power chip, the control chip, the power terminal, and the control terminal with mold resin, wherein first and second recesses for attaching a fin are respectively provided on side faces facing each other of the package from which neither the power terminal nor the control terminal protrudes, and the first and second recesses are arranged not at positions opposite to each other but alternately.Type: GrantFiled: April 16, 2018Date of Patent: August 11, 2020Assignee: Mitsubishi Electric CorporationInventors: Maki Hasegawa, Shuhei Yokoyama, Shigeru Mori, Hisashi Kawafuji
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Patent number: 10332869Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.Type: GrantFiled: April 28, 2017Date of Patent: June 25, 2019Assignee: Mitsubishi Electric CorporationInventors: Naoki Ikeda, Hisashi Oda, Maki Hasegawa, Hisashi Kawafuji
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Publication number: 20190115283Abstract: A power module includes: a power chip; a control chip controlling the power chip; a power terminal connected to the power chip; a control terminal connected to the control chip; and a package covering the power chip, the control chip, the power terminal, and the control terminal with mold resin, wherein first and second recesses for attaching a fin are respectively provided on side faces facing each other of the package from which neither the power terminal nor the control terminal protrudes, and the first and second recesses are arranged not at positions opposite to each other but alternately.Type: ApplicationFiled: April 16, 2018Publication date: April 18, 2019Applicant: Mitsubishi Electric CorporationInventors: Maki HASEGAWA, Shuhei YOKOYAMA, Shigeru MORI, Hisashi KAWAFUJI
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Publication number: 20170236812Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.Type: ApplicationFiled: April 28, 2017Publication date: August 17, 2017Applicant: Mitsubishi Electric CorporationInventors: Naoki IKEDA, Hisashi ODA, Maki HASEGAWA, Hisashi KAWAFUJI
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Patent number: 9716058Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.Type: GrantFiled: October 14, 2014Date of Patent: July 25, 2017Assignee: Mitsubishi Electric CorporationInventors: Naoki Ikeda, Hisashi Oda, Maki Hasegawa, Hisashi Kawafuji
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Patent number: 9324685Abstract: There is provided a semiconductor device having a converter circuit, a brake circuit and an inverter circuit and manufacturable by a simplified manufacturing process. The semiconductor device has a plurality of die pads, IGBTs, diodes, freewheel diodes, an HVIC and LVICs mounted on the plurality of die pads, a plurality of leads, and an encapsulation resin body that covers these component parts. In a manufacturing process, a single-plate lead frame having the above-described plurality of die pads and leads connected together can be prepared. The semiconductor device may be manufactured by using this single-plate lead frame.Type: GrantFiled: November 12, 2015Date of Patent: April 26, 2016Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Hongbo Zhang, Hisashi Kawafuji, Ming Shang, Shinya Nakagawa
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Publication number: 20160064353Abstract: There is provided a semiconductor device having a converter circuit, a brake circuit and an inverter circuit and manufacturable by a simplified manufacturing process. The semiconductor device has a plurality of die pads, IGBTs, diodes, freewheel diodes, an HVIC and LVICs mounted on the plurality of die pads, a plurality of leads, and an encapsulation resin body that covers these component parts. In a manufacturing process, a single-plate lead frame having the above-described plurality of die pads and leads connected together can be prepared. The semiconductor device may be manufactured by using this single-plate lead frame.Type: ApplicationFiled: November 12, 2015Publication date: March 3, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hongbo ZHANG, Hisashi KAWAFUJI, Ming SHANG, Shinya NAKAGAWA
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Patent number: 9230891Abstract: There is provided a semiconductor device having a converter circuit, a brake circuit and an inverter circuit and manufacturable by a simplified manufacturing process. the semiconductor device has a plurality of die pads, IGBTs, diodes, freewheel diodes, an HVIC and LVICs mounted on the plurality of die pads, a plurality of leads, and an encapsulation resin body that covers these component parts. In a manufacturing process, a single-plate lead frame having the above-described plurality of die pads and leads connected together can be prepared. The semiconductor device may be manufactured by using this single-plate lead frame.Type: GrantFiled: April 7, 2014Date of Patent: January 5, 2016Assignee: Mitsubishi Electric CorporationInventors: Hongbo Zhang, Hisashi Kawafuji, Ming Shang, Shinya Nakagawa
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Publication number: 20150155228Abstract: A power module includes one control IC and a plurality of reverse conducting insulated gate bipolar transistors (RC-IGBTs). The control IC has the functions of a high-voltage IC and a low-voltage IC. The plurality of RC-IGBTs are disposed on three of four sides of the control IC and connected to the control IC through only wires.Type: ApplicationFiled: October 14, 2014Publication date: June 4, 2015Applicant: Mitsubishi Electric CorporationInventors: Naoki IKEDA, Hisashi ODA, Maki HASEGAWA, Hisashi KAWAFUJI
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Publication number: 20150084173Abstract: There is provided a semiconductor device having a converter circuit, a brake circuit and an inverter circuit and manufacturable by a simplified manufacturing process. the semiconductor device has a plurality of die pads, IGBTs, diodes, freewheel diodes, an HVIC and LVICs mounted on the plurality of die pads, a plurality of leads, and an encapsulation resin body that covers these component parts. In a manufacturing process, a single-plate lead frame having the above-described plurality of die pads and leads connected together can be prepared. The semiconductor device may be manufactured by using this single-plate lead frame.Type: ApplicationFiled: April 7, 2014Publication date: March 26, 2015Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Hongbo ZHANG, Hisashi KAWAFUJI, Ming SHANG, Shinya NAKAGAWA
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Patent number: 7808085Abstract: A semiconductor device includes a pair of power chips, an IC chip, a plurality of leads one of which having a die pad on which the power chips are mounted and another one having a die attach portion on which the IC chip is mounted, a resin sheet firmly adhered to one side of the die pad, and a resin casing made by molding operation to encapsulate the power chips, the IC chip and the resin sheet by a resin in such a manner that one surface of the resin sheet opposite the die pad is exposed to the exterior of the resin casing. The resin casing has a groove formed in one surface opposite the exposed surface of the resin sheet, the groove extending parallel to the resin sheet and perpendicular to a runner through which the resin was supplied in the molding operation.Type: GrantFiled: November 15, 2006Date of Patent: October 5, 2010Assignee: Mitsubishi Electric CorporationInventors: Hiroyuki Ozaki, Hisashi Kawafuji, Shinya Nakagawa, Kenichi Hayashi
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Patent number: 7781262Abstract: The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold.Type: GrantFiled: October 27, 2006Date of Patent: August 24, 2010Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Kenichi Hayashi, Hisashi Kawafuji, Tatsuyuki Takeshita, Nobuhito Funakoshi, Hiroyuki Ozaki
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Patent number: 7671453Abstract: A semiconductor device in which chips are resin-molded, including: frames having front and back surfaces and die pads; power chips mounted on the surfaces of the die pads; an insulation resin sheet having a first and a second surfaces which are opposed against each other, the resin sheet being disposed such that the back surfaces of the die pads contact the first surface of the resin sheet; and a mold resin applied on the first surface of the resin sheet so as to seal up the power chips. The thermal conductivity of the resin sheet is larger than that of the mold resin.Type: GrantFiled: September 22, 2004Date of Patent: March 2, 2010Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Kenichi Hayashi, Hisashi Kawafuji, Tatsuyuki Takeshita, Nobuhito Funakoshi, Hiroyuki Ozaki, Kazuhiro Tada
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Patent number: 7361983Abstract: In a semiconductor device (1), semiconductor elements (2) and (3) are mounted on a lead frame (5) having leads (4). The semiconductor elements (2) and (3) are connected with the leads (4) by metallic wires (6) and (7). The semiconductor device (1) also has a heat sink (8). The members (2) to (8) are sealed with a plastic package (10). The leads (4) are exposed outward. Each of the end leads (4a) to (4d) has a wide first lead portion, a narrow second lead portion, a third lead portion to be inserted into an external substrate, and a protruding gap-controlling portion (9) for keeping the gap between the semiconductor device (1) and the external substrate constant. Because the heat resistance from the leads (4) to the plastic package (10) increases, the temperature-rise property of the lead is improved so that the solderability is improved.Type: GrantFiled: July 24, 2003Date of Patent: April 22, 2008Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Kenichi Hayashi, Hisashi Kawafuji, Junichi Murai, Goro Izuta
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Publication number: 20070132112Abstract: A semiconductor device includes a pair of power chips, an IC chip, a plurality of leads one of which having a die pad on which the power chips are mounted and another one having a die attach portion on which the IC chip is mounted, a resin sheet firmly adhered to one side of the die pad, and a resin casing made by molding operation to encapsulate the power chips, the IC chip and the resin sheet by a resin in such a manner that one surface of the resin sheet opposite the die pad is exposed to the exterior of the resin casing. The resin casing has a groove formed in one surface opposite the exposed surface of the resin sheet, the groove extending parallel to the resin sheet and perpendicular to a runner through which the resin was supplied in the molding operation.Type: ApplicationFiled: November 15, 2006Publication date: June 14, 2007Applicant: Mitsubishi Electric CorporationInventors: Hiroyuki Ozaki, Hisashi Kawafuji, Shinya Nakagawa, Kenichi Hayashi
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Patent number: D770994Type: GrantFiled: June 20, 2016Date of Patent: November 8, 2016Assignee: MITSUBISHI ELECTRIC CORPORATIONInventors: Maki Hasegawa, Masahiro Kato, Shinya Nakagawa, Hisashi Kawafuji, Toru Iwagami
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Patent number: D772182Type: GrantFiled: September 29, 2014Date of Patent: November 22, 2016Assignee: Mitsubishi Electric CorporationInventors: Maki Hasegawa, Masahiro Kato, Shinya Nakagawa, Hisashi Kawafuji, Toru Iwagami
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Patent number: D777124Type: GrantFiled: June 20, 2016Date of Patent: January 24, 2017Assignee: Mitsubishi Electric CorporationInventors: Maki Hasegawa, Masahiro Kato, Shinya Nakagawa, Hisashi Kawafuji, Toru Iwagami
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Patent number: D783550Type: GrantFiled: June 20, 2016Date of Patent: April 11, 2017Assignee: Mitsubishi Electric CorporationInventors: Maki Hasegawa, Masahiro Kato, Shinya Nakagawa, Hisashi Kawafuji, Toru Iwagami