Abstract: The present invention relates a semiconductor device, and in particular, it aims at providing a semiconductor device having high reliability by making coating of a region where a gold wire has been used, which has been performed for preventing deformation and breakage of the gold wire in pressure fitting of resin, unnecessary and preventing deformation and breakage of the gold wire without increasing the fabrication cost, in a semiconductor device packaging a power device and a control device controlling this power device. In order to attain the aforementioned object, a mold gate (21) is provided on a molding die (20) employed in fabrication of the semiconductor device to be positioned on a side where a power device (PD) is arranged in a state placing a lead frame (10).

Abstract: The present invention relates to a semiconductor device, and more particularly, it aims at providing a semiconductor device which is excellent in workability of assembly and reduces the assembly cost in a semiconductor device packaging a power device and a control device controlling this power device.In order to attain the aforementioned object, it shows a lead frame (10) before mounting a power device (PD) and a control device (CD), and a region where a gold wire (W2) is arranged and a region where the power device (PD) is arranged are silver-plated regions (A). Further, a region where an aluminum wire (W1) is arranged is a nickel-plated region (B). Further, a power device die pad (1A) is connected to a tie bar (5) and a frame (6) by suspension leads (40 to 45), and supported in three directions. Further, an intermediate lead (3A to 3D) is formed in the vicinity of the control device (CD).

Abstract: A groove (21) is formed on an upper surface of sealing resin (2) in the form of a strip. A device (101) is pressed against a flat surface of a radiating fin (55) by a band plate shaped clamper (61) which is engaged with the groove (21). Due to the engagement of the clamper (61) and the groove (21), movement of the device (101) is limited. Namely, the device (101) is stably fixed to the radiating fin (55). Since the device (101) is fixed to the radiating fin (55) by the clamper (61), no hole for receiving a fastening screw is provided in the sealing resin (2). Therefore, the sealing resin (2) is reduced, whereby miniaturization of the device (101) is implemented. Thus, the device is miniaturized at no sacrifice of radiation efficiency.

Abstract: In a device (101) formed as an invertor, terminals connected to floating source pins (VS) which are provided in control circuits (31 to 33) are limited to output terminals (U, V, W). In order to hold voltages across floating source pins (VD, VS), capacitive elements (51 to 53) which are provided around the device (101) are connected to the output terminals (U, V, W). Thus, the terminals which are connected with the floating source pins (VS) are shared by the output terminals (U, V, W), whereby the numbers of the terminals and wiring patterns are reduced. Thus, the device (101) is miniaturized.

Abstract: It is an object to facilitate assembly of an application device. A device (101) is provided with a heat sink (51) to radiate loss heat of an IGBT element (11) as a power semiconductor element to an external radiation fin. External terminals (5 and 6) connected to an external circuit substrate protrude in the direction in which the exposed surface of the heat sink (51) is directed. Accordingly, when assembling an application device by mounting the device (101) on the external circuit substrate together with other circuit elements, it is possible to mount the device (101) and other circuit elements together on the common main surface of the circuit substrate, i.e., on its main surface on the side opposite to the side where the radiation fin is attached. Accordingly, it is possible to collectively apply solder on the common main surface of the circuit substrate and collectively solder the device (101) and the other circuit elements.

Abstract: It is an object to downsize a device while maintaining a high breakdown voltage. An external terminal (7) protrudes to the outside from the side wall of a sealing resin (2) and a heat sink (1) is exposed in the bottom of the sealing resin (2). A step surface (21) retracted from the exposed surface of the heat sink (1) is formed in the part of the sealing resin (2) surrounding the periphery of the heat sink (1). When using this semiconductor device, the exposed surface of the heat sink (1) is brought into surface contact with the flat surface (41a) of the radiation fin (41) and an insulation sheet (31) is interposed between the step surface (21) and the flat surface (41a), and which is pressed therebetween. The insulation sheet (31) is disposed to cover the region facing the external terminal (7) in the flat surface (41a).