Abstract: The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold.

Abstract: The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold.

Abstract: The method of producing a semiconductor device in which chips are resin-molded, including steps of: preparing frames having front and back surfaces and die pads; preparing an insulation resin sheet having a first and a second surfaces; preparing a resin-sealing metal mold having cap pins; mounting the resin sheet inside the resin-sealing metal mold in such a manner that the second surface of the resin sheet contacts an inner bottom surface of the resin-sealing metal mold; mounting power chips on the surfaces of the die pads; positioning the frames on the first surface of the resin sheet in such a manner that the back surfaces of the die pads contact the first surface of the resin sheet; pressing the die pads toward the resin sheet using the cap pins and fixing the die pads; injecting a sealing resin in the resin-sealing metal mold and hardening the sealing resin; and removing the semiconductor device in which the power chips are molded with the sealing resin out from the resin-sealing metal mold.

Abstract: A semiconductor device in which chips are resin-molded, including: frames having front and back surfaces and die pads; power chips mounted on the surfaces of the die pads; an insulation resin sheet having a first and a second surfaces which are opposed against each other, the resin sheet being disposed such that the back surfaces of the die pads contact the first surface of the resin sheet; and a mold resin applied on the first surface of the resin sheet so as to seal up the power chips. The thermal conductivity of the resin sheet is larger than that of the mold resin.

Abstract: An inverter module includes a plurality of leads arranged according to a ZIP. A lead (101U, 101V, 101W) serving as a load side output terminal and a lead (104U, 104V, 104W) serving as a high-potential side control input terminal are bent toward directions opposite to each other. A lead (107U, 107V, 107W) serving as a low-potential side control input terminal is arranged at a distance four times a terminal pitch from the lead serving as the load side output terminal (101U, 101V, 101W).

Abstract: A resin-molded device of an aspect of the present invention includes a plurality of electronic elements spaced from each other. It also has a plurality of lead members, each one of the lead members electrically connecting to the corresponding one of the electronic elements. Further, it has a plurality of metal blocks spaced from each other so that a plurality of channel portions are defined between the metal blocks. Each of the metal blocks is arranged so as to correspond to at least one of the electronic elements and the lead members connected to the electronic element. The resin-molded device includes a resin package of electrically insulating material molded so as to hold together the plurality of the electronic elements, the lead members, and the metal blocks. The resin package includes a plurality of resin inlets through which fluid resin is injected, and wherein each of the resin inlets opposes to the corresponding one of the channel portions.

Abstract: In a semiconductor device (1), semiconductor elements (2) and (3) are mounted on a lead frame (5) having leads (4). The semiconductor elements (2) and (3) are connected with the leads (4) by metallic wires (6) and (7). The semiconductor device (1) also has a heat sink (8). The members (2) to (8) are sealed with a plastic package (10). The leads (4) are exposed outward. Each of the end leads (4a) to (4d) has a wide first lead portion, a narrow second lead portion, a third lead portion to be inserted into an external substrate, and a protruding gap-controlling portion (9) for keeping the gap between the semiconductor device (1) and the external substrate constant. Because the heat resistance from the leads (4) to the plastic package (10) increases, the temperature-rise property of the lead is improved so that the solderability is improved.

Abstract: Each lead frame for a power chip has one side main surface on which a power chip is mounted and a suspension lead part provided projectingly from a region reserved for forming mold resin in addition to a lead terminal. Thus, the lead frame can be supported by the plurality of suspension lead parts in a molding step. A metal block is provided on the other main surface of the lead frame to face the power chip. Consequently, a semiconductor device with good heat radiation properties and good insulation breakdown voltages can be obtained.

Abstract: A resin-molded device of an aspect of the present invention includes a plurality of electronic elements spaced from each other. It also has a plurality of lead members, each one of the lead members electrically connecting to the corresponding one of the electronic elements. Further, it has a plurality of metal blocks spaced from each other so that a plurality of channel portions are defined between the metal blocks. Each of the metal blocks is arranged so as to correspond to at least one of the electronic elements and the lead members connected to the electronic element. The resin-molded device includes a resin package of electrically insulating material molded so as to hold together the plurality of the electronic elements, the lead members, and the metal blocks. The resin package includes a plurality of resin inlets through which fluid resin is injected, and wherein each of the resin inlets opposes to the corresponding one of the channel portions.

Abstract: A semiconductor power module that can be downsized and is a malfunction-resistant is provided. In a semiconductor unit, a first circuit with a first semiconductor chip mounted on a first lead frame and a second circuit with a second semiconductor chip mounted on a second lead frame are sealed in a resin package. The first lead frame and the second lead frame are arranged to be overlapped. According to this arrangement, physical dimensions can be reduced as compared to a conventional semiconductor module in which no practical overlap exists. In addition, since the module is packaged using resin, the noise resistance of the semiconductor unit can be improved and malfunction can be still more reduced.

Abstract: Each lead frame for a power chip has one side main surface on which a power chip is mounted and a suspension lead part provided projectingly from a region reserved for forming mold resin in addition to a lead terminal. Thus, the lead frame can be supported by the plurality of suspension lead parts in a molding step. A metal block is provided on the other main surface of the lead frame to face the power chip. Consequently, a semiconductor device with good heat radiation properties and good insulation breakdown voltages can be obtained.

Abstract: An inverter module includes a plurality of leads arranged according to a ZIP. A lead (101U, 101V, 101W) serving as a load side output terminal and a lead (104U, 104V, 104W) serving as a high-potential side control input terminal are bent toward directions opposite to each other. A lead (107U, 107V, 107W) serving as a low-potential side control input terminal is arranged at a distance four times a terminal pitch from the lead serving as the load side output terminal (101U, 101V, 101W).

Abstract: A resin-sealed power semiconductor device is provided. The thicknesses of a die pad (19) and a lead part (2) are made equal and as great as possible. A thick film substrate (8) is bonded with a bonding layer (20) onto a plurality of supporting inner leads (2AS) among first inner leads (2A1) positioned above the die pad (19). Patterns of a control circuit of power semiconductor elements (1) are formed as thick film patterns (10) on an upper surface of the substrate (8), and a control circuit element (IC) (9) and all electronic components (12) are mounted on the patterns (10) by soldering. The constituents (9, 12, 10, 8, 1, 2A1, 19, 2B1) are sealed in a sealing resin (5). The resin-sealed power semiconductor device improves noise immunity while conventionally effectively dissipating heat generated by the power semiconductor elements, and is designed to be adaptable to increase in functionality thereof.