Abstract: In an embodiment, a method includes performing a first plasma deposition to form a buffer layer over a first side of a first integrated circuit device, the first integrated circuit device comprising a first substrate and a first interconnect structure; performing a second plasma deposition to form a first bonding layer over the buffer layer, wherein a plasma power applied during the second plasma deposition is greater than a plasma power applied during the first plasma deposition; planarizing the first bonding layer; forming a second bonding layer over a second substrate; pressing the second bonding layer onto the first bonding layer; and removing the first s

Abstract: A U-shaped unit and a liquid crystal element with U-shaped coplanar electrode units provided by the invention are capable of increasing a horizontal electric field intensity in a power supply state, so that when the invention is applied to be used as a liquid crystal driving element, a required horizontal electric field intensity can be achieved with a lower driving voltage to reduce a required driving power when the liquid crystal element is used as a display screen, thereby achieving an effect of power saving.

Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Abstract: A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a second dielectric layer on the high resistance layer, a low-k dielectric layer over the second dielectric layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.

Abstract: The present application related to a method for detecting image using hyperspectral imaging by band selection. Firstly, obtaining a hyperspectral imaging information according to a reference image, hereby, obtaining corresponded hyperspectral image from an input image, and obtaining corresponded feature values by band selection for operating Principal components analysis to simplify feature values. Then, obtaining feature images by Convolution kernel, and then positioning an image of an object under detected by a default box and a boundary box from the feature image. By Comparing with the esophageal cancer sample image, the image of the object under detected is classifying to an esophageal cancer image or a non-esophageal cancer image. Thus, detecting an input image from the image capturing device by the convolutional neural network to judge if the input image is the esophageal cancer image for helping the doctor to interpret the image of the object under detected.

Abstract: A U-shaped unit and a liquid crystal element with U-shaped coplanar electrode units provided by the invention are capable of increasing a horizontal electric field intensity in a power supply state, so that when the invention is applied to be used as a liquid crystal driving element, a required horizontal electric field intensity can be achieved with a lower driving voltage to reduce a required driving power when the liquid crystal element is used as a display screen, thereby achieving an effect of power saving.

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10?6/K. A metal oxide layer is then disposed over a surface of the component body.

Abstract: A manufacturing method for manufacturing a package structure is provided. The manufacturing method includes: (a) providing a carrier having a top surface and a lateral side surface, wherein the top surface includes a main portion and a flat portion connecting the lateral side surface, and a first included angle between the main portion and the flat portion is less than a second included angle between the main portion and the lateral side surface; (b) forming an under layer on the carrier to at least partially expose the flat portion; and (c) forming a dielectric layer on the under layer and covering the exposed flat portion.

Abstract: A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

Abstract: A semiconductor device including: a metal-insulator-semiconductor (MIS) structure that includes a nitride semiconductor layer, a gate insulator film, and a gate electrode stacked in stated order; and a source electrode and a drain electrode that are disposed to sandwich the gate electrode in a plan view and contact the nitride semiconductor layer. The gate insulator film includes a threshold value control layer that includes an oxynitride film.

Abstract: A U-shaped unit and a liquid crystal element with U-shaped coplanar electrode units provided by the invention are capable of increasing a horizontal electric field intensity in a power supply state, so that when the invention is applied to be used as a liquid crystal driving element, a required horizontal electric field intensity can be achieved with a lower driving voltage to reduce a required driving power when the liquid crystal element is used as a display screen, thereby achieving an effect of power saving.

Abstract: A method for providing a part with a plasma resistant ceramic coating for use in a plasma processing chamber is provided. A patterned mask is placed on the part. A film is deposited over the part. The patterned mask is removed. A plasma resistant ceramic coating is applied on the part.

Abstract: A method for conditioning ceramic coating on a part for use in a plasma processing chamber is provided. The ceramic coating is wetted with a solution, wherein the solution is formed by mixing a solvent with an electrolyte, wherein from 1% to 10% of the electrolyte dissociates in the solution. The ceramic coating is blasted with particles. The ceramic coating is rinsed.

Abstract: A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

Abstract: An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

Abstract: A semiconductor device including: a metal-insulator-semiconductor (MIS) structure that includes a nitride semiconductor layer, a gate insulator film, and a gate electrode stacked in stated order; and a source electrode and a drain electrode that are disposed to sandwich the gate electrode in a plan view and contact the nitride semiconductor layer. The gate insulator film includes a threshold value control layer that includes an oxynitride film.

Abstract: An optical touch control system and an optical sensor thereof are provided. The optical sensor can be applied to a display having a display surface. The optical sensor includes a connecting frame, a light curtain module and a light emitter. The connecting frame has a first end portion and a second end portion opposite the first end portion. The light curtain module is disposed between the first end portion and the second end portion of the connecting frame. The light curtain module includes a light emitter electrically connected to the display so as to generate an invisible light curtain parallel to the display surface. The optical detection module is disposed on the second end portion of the connecting frame. The optical detection module includes a light detector electrically connected to the display so as to retrieve information about a touch location where an object touches the invisible light curtain.

Abstract: A method for conditioning a ceramic layer with a thickness of less than 150 ?m over a substrate is provided. The ceramic layer is cleaned. A region of the ceramic layer is scanned with a pulsed excimer laser beam at a repetition rate of 3-300 Hz.

Abstract: A cleaning fixture assembly for protecting an electrostatic chuck suitable for supporting semiconductor substrates during a cleaning process contains a plate configured to align with and engage a backside of the electrostatic chuck, the plate having an annular seal portion surrounding a pocket. The cleaning fixture assembly also contains a first O-ring engaging the annular seal portion of the plate, a plurality of through-holes in the pocket of the plate, and a plurality of O-rings surrounding the plurality of through-holes in the pocket of the plate. The plurality of through-holes are configured to be aligned with and in fluid communication with lift pin holes and helium holes in the backside of the electrostatic chuck, and the plurality of O-rings are positioned to allow cleaning media to engage the lift pin holes and helium holes in the electrostatic chuck during a cleaning process while sealing the cleaning media from reaching the backside of the electrostatic chuck.