Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.

Abstract: A method of removing an epoxy band from an electrostatic chuck includes securing the electrostatic chuck in a servicing fixture, applying a thermal source to the epoxy band to breakdown a plurality of adhesive bonds securing the epoxy band to the electrostatic chuck, forming a hole in the epoxy band and pulling the epoxy band from the electrostatic chuck. A system for removing an epoxy band from an electrostatic chuck is also described.

Abstract: The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

Abstract: A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode.

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

Abstract: An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof. The support surface having a first set of holes configured to receive pins engaged in an upper surface of the inner electrode, a second set of holes configured to receive pins surrounding an outer periphery of the inner electrode, a third set of holes configured to receive pins engaged in an upper surface of the outer electrode, and a fourth set of holes configured to receive pins surrounding an outer periphery of the outer electrode.

Abstract: An interactive display system includes an input device and an image interaction module. The input device has a touch portion including a built-in first light-emitting module and a built-in second light-emitting module. The image interaction module includes a display module, a first image-capturing module, a second image-capturing module and a processing module. The processing module captures invisible light generated by the first light-emitting module through the first image-capturing module, for determining and obtaining the position of the touch portion. The processing module captures visible light generated by the second light-emitting module through the second image-capturing module according to the position of the touch portion, for determining and obtaining a predetermined color light source provided by the visible light generated by the second light-emitting module.

Abstract: A cleaning fixture assembly for protecting an electrostatic chuck suitable for supporting semiconductor substrates during a cleaning process contains a plate configured to align with and engage a backside of the electrostatic chuck, the plate having an annular seal portion surrounding a pocket. The cleaning fixture assembly also contains a first O-ring engaging the annular seal portion of the plate, a plurality of through-holes in the pocket of the plate, and a plurality of O-rings surrounding the plurality of through-holes in the pocket of the plate. The plurality of through-holes are configured to be aligned with and in fluid communication with lift pin holes and helium holes in the backside of the electrostatic chuck, and the plurality of O-rings are positioned to allow cleaning media to engage the lift pin holes and helium holes in the electrostatic chuck during a cleaning process while sealing the cleaning media from reaching the backside of the electrostatic chuck.

Abstract: A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.

Abstract: A substrate processing chamber component comprising a chamber component structure having an yttrium-aluminum coating. The yttrium-aluminum coating comprises a compositional gradient through a thickness of the coating.

Abstract: An injector cleaning apparatus with a concentric dual flow introducer and a flow-dispersing injector seat along with a method of cleaning an injector. The concentric dual flow introducer has concentric cleaning fluid flowpaths configured to communicate with a central passage and a plurality of peripheral passages of a gas injector. The input-side injector engaging interface of the concentric dual flow introducer and the flow-dispersing injector seat each have a compressible sealing portion having compressibility sufficient to yield under fluid cleaning surges attributable to initiation and termination of cleaning fluid flow through the injector cleaning apparatus along with resiliency sufficient to prevent abutment of the gas injector and a rigid facing portion of the input-side injector engaging interface and output-side injector engaging interface respectively.

Abstract: A cold spray barrier coated component of a semiconductor plasma processing chamber comprises a substrate having at least one metal surface wherein a portion of the metal surface is configured to form an electrical contact. A cold spray barrier coating is formed from a thermally and electrically conductive material on at least the metal surface configured to form the electrical contact of the substrate. Further, the cold spray barrier coating may also be located on a plasma exposed and/or process gas exposed surface of the component.

Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

Abstract: An automated hydrogen bubble detection apparatus includes a horizontal support surface on which a test coupon can be supported, a transparent tube having an open top and an open bottom and operable to contain a test solution when positioned on a test coupon, a camera arranged to view a test solution in the transparent tube, and a controller in communication with the camera and effective to operate the camera such that at least one video segment is recorded by the camera and analyzed to detect first bubble and continuous bubble generation. A method of evaluating corrosion resistance of coatings on aluminum and steel in acidic solution is also included.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: A particle removal tool having a sound field transducer, a cleaning chamber, and an open sealing face. The cleaning chamber having a cleaning fluid guiding chamber extending from the sound field transducer to the open sealing face, a cleaning fluid delivery channel in fluid communication with the cleaning fluid guiding chamber, and a cleaning fluid return channel. The open sealing face has a cleaning portal disposed contiguous with a plane formed by the open sealing face and a chamber-to-surface interface seal which forms a fluid tight seal with a cleaning surface plane. The sound field transducer is disposed within a line-of-sight of the cleaning portal and generates acoustic waves with a frequency between approximately 20 kHz and approximately 2 MHz.

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.

Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.