Abstract: An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface.

Abstract: A palladium plated aluminum component of a semiconductor plasma processing chamber comprises a substrate including at least an aluminum or aluminum alloy surface, and a palladium plating on the aluminum or aluminum alloy surface of the substrate. The palladium plating comprises an exposed surface of the component and/or a mating surface of the component.

Abstract: A tungsten carbide coated chamber component of semiconductor processing equipment includes a metal surface, optional intermediate nickel coating, and outer tungsten carbide coating. The component is manufactured by optionally depositing a nickel coating on a metal surface of the component and depositing a tungsten carbide coating on the metal surface or nickel coating to form an outermost surface.

Abstract: A method of removing an epoxy band from an electrostatic chuck includes securing the electrostatic chuck in a servicing fixture, applying a thermal source to the epoxy band to breakdown a plurality of adhesive bonds securing the epoxy band to the electrostatic chuck, forming a hole in the epoxy band and pulling the epoxy band from the electrostatic chuck. A system for removing an epoxy band from an electrostatic chuck is also described.

Abstract: An actively heated aluminum baffle component such as a thermal control plate or baffle ring of a showerhead electrode assembly of a plasma processing chamber has an exposed outer aluminum oxide layer which is formed by an electropolishing procedure. The exposed outer aluminum oxide layer minimizes defects and particles generated as a result of differential thermal stresses experienced by the aluminum component and outer aluminum oxide layer during plasma processing compared to an identically shaped component having a Type III anodized surface.

Abstract: An electro-mechanical fastener includes a fastener body having a connection portion materially integrally formed with at least one mounting member. The at least one mounting member has a thickness that is no more than three-times greater than a thickness of a substrate to which the electro-mechanical fastener is joined. The at least one mounting member is configured and disposed to be joined to the substrate through a welded connection.

Abstract: A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen secured to the polishing, which can comprise a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts and mount receptacles can be configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The silicon electrode can be polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode. Additional embodiments are contemplated, disclosed and claimed.

Abstract: A composite substrate made of a conductive pattern structure mounted on a lead frame is used for an electronic system package. High heat generated electronic components are adapted to mount on the lead frame and relatively low heat generated electronic components are adapted to mount on the conductive pattern structure. Metal lines are used for electrical coupling between the circuitry of the IC chip and the conductive pattern structure. An electronic system with the composite substrate gains both advantages—good circuitry arrangement capability from the conductive pattern structure and good heat distribution from the lead frame.

Abstract: An optical touch screen expansion method comprises a primary optical touch module setting process and at least one expanded optical touch module setting process that respectively enable a host to acquire original touch position information according to an identification code thereof and work out information of an absolute position of a touch point via a touch position calibration algorithm, whereby the host can simultaneously control several optical touch modules. Therefore, the present invention enables a single host (i.e., identical software) to control several optical touch modules.

Abstract: A method of installing a component of a plasma processing chamber by replacing a used component with a component made by forming a dual-layer green body and co-sintering the dual-layer green body so as to form a three-layer component. The three layer component comprises an outer layer of yttria, an intermediate layer of YAG, and a second outer layer of alumina. The component is installed such that the outer layer of yttria is exposed to the plasma environment when the chamber is in operation.

Abstract: In accordance with one embodiment of the present disclosure, an electrode carrier assembly is provided including an electrode carrying annulus and a plurality of electrode mounting members. The electrode carrying annulus includes an electrode containment sidewall that forms an inner or outer radius of the electrode carrying annulus. The electrode carrying annulus further includes a plurality of radial sidewall projections that project radially away from the electrode containment sidewall. The radial sidewall projections each include an upward-facing tapered spacer including an upward-facing micro-mesa. The electrode mounting members each include a downward-facing tapered spacer including a downward-facing micro-mesa. The electrode mounting members are rotatably engaged with the electrode carrying annulus, and are configured to rotate between a free position and a bracketed position.

Abstract: A dielectric window cleaning apparatus may be used for cleaning a dielectric window of a plasma processing device. The dielectric window cleaning apparatus may comprise a window support base, a fluid containing enclosure, a window rotating mechanism, a spray arm, and multiple fluid spraying nozzles. The fluid containing enclosure may include at least one overflow containment sidewall and may be located at least partially under and at least partially around a portion of the window support base. The window rotating mechanism may be operatively connected to the window support base and may rotate the window support base. The spray arm may be in fluid communication with a fluid source and may include a fluid flow channel. The multiple fluid spraying nozzles may each expel fluid from the fluid flow channel in a window cleansing spray.

Abstract: A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis.

Abstract: A method of cleaning a surface of a component of a plasma chamber, wherein the component has an aluminum or anodized aluminum surface, the method including the steps of: soaking the surface of the component in a diluted sulfuric peroxide (DSP) solution; spray rinsing the surface with water following removal of the surface from the DSP solution; soaking the surface in a dilute nitric acid (HNO3) solution; spray rinsing the surface with water following removal of the surface from the dilute nitric acid solution; and repeating at least twice the steps of soaking the surface in dilute nitric acid followed by spray rinsing the surface.

Abstract: A composite substrate made of a circuit board mounted on a lead frame is used for an electronic system package. High heat generated electronic components are adapted to mount on the lead frame and relatively low heat generated electronic components are adapted to mount on the circuit board. Metal lines are used for electrical coupling between the circuitry of the IC chip and the circuit board. An electronic system with the composite substrate gains both advantages—good circuitry arrangement capability from the circuit board and good heat distribution from the lead frame.

Abstract: The invention discloses a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a recess is formed in the device carrier and a conductive element is disposed on the substrate, wherein the substrate is disposed on the device carrier and the conductive element is located in the recess of the device carrier. The conductive pattern in the substrate is electrically connected to the device carrier and I/O terminals of the first conductive element. The invention also discloses a method for manufacturing a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a portion of the conductive pattern in the substrate can be modified.

Abstract: In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum (Ta).

Abstract: In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.

Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.

Abstract: In one embodiment, a cleaning assembly may include a modular electrode sealing housing, an acid injection inlet, and a fluid injection inlet. The modular electrode sealing housing may include a high pressure closure member that contains a first cleaning volume and a low pressure closure member that contains a second cleaning volume. The acid injection inlet can be in fluid communication with the first cleaning volume of the high pressure closure member. The fluid injection inlet can be in fluid communication with the second cleaning volume of the low pressure closure member. During normal operation, a showerhead electrode can be sealed within the modular electrode sealing housing such that the first cleaning volume is located on a first side and the second cleaning volume is located on a second side of the showerhead electrode.