Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.

Abstract: An apparatus for use in a plasma processing chamber is provided. The apparatus comprises part body and a coating with a thickness of no more than 30 microns consisting essentially of a Lanthanide series or Group III or Group IV element in an oxyfluoride covering a surface of the part body.

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for creating a plasma resistant part, which may be formed of a sintered nanocrystalline ceramic material comprising yttrium, oxide, and fluoride. Example parts thus made may include windows, edge rings, or injectors. In one configuration, the parts may be yttria co-sintered with alumina, which may be transparent.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: The invention discloses a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a recess is formed in the device carrier and a conductive element is disposed on the substrate, wherein the substrate is disposed on the device carrier and the conductive element is located in the recess of the device carrier. The conductive pattern in the substrate is electrically connected to the device carrier and I/O terminals of the first conductive element. The invention also discloses a method for manufacturing a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a portion of the conductive pattern in the substrate can be modified.

Abstract: In accordance with this disclosure, there are provided several inventions, including an apparatus and method for brazing at least two aluminum or aluminum alloy components and providing an anodized coating, and an atomic layer deposition coating for adding plasma corrosion resistance.

Abstract: A particle removal tool having a sound field transducer, a cleaning chamber, and an open sealing face. The cleaning chamber having a cleaning fluid guiding chamber extending from the sound field transducer to the open sealing face, a cleaning fluid delivery channel in fluid communication with the cleaning fluid guiding chamber, and a cleaning fluid return channel. The open sealing face has a cleaning portal disposed contiguous with a plane formed by the open sealing face and a chamber-to-surface interface seal which forms a fluid tight seal with a cleaning surface plane. The sound field transducer is disposed within a line-of-sight of the cleaning portal and generates acoustic waves with a frequency between approximately 20 kHz and approximately 2 MHz.

Abstract: A portable information handling system keyboard rests on a support surface of a housing with securing actions taken from above the housing, such as by screws that insert through the keyboard and then into the housing. A lattice cover having key openings fits over the keyboard to align adapters of its bottom surface with posts extending from the support surface through openings formed in the keyboard. The adapters snap to the posts to couple the cover against the keyboard so that the cover bottom surface presses the keyboard against the information handling systems upper support surface.

Abstract: A composite substrate made of a conductive pattern structure mounted on a lead frame is used for an electronic system package. High heat generated electronic components are adapted to mount on the lead frame and relatively low heat generated electronic components are adapted to mount on the conductive pattern structure. Metal lines are used for electrical coupling between the circuitry of the IC chip and the conductive pattern structure. An electronic system with the composite substrate gains both advantages—good circuitry arrangement capability from the conductive pattern structure and good heat distribution from the lead frame.

Abstract: A method for providing a protective layer over a substrate is provided. A ceramic layer is deposited over the substrate, wherein the ceramic layer has a porosity. A localized heating of a region of the ceramic layer to a temperature that causes the ceramic layer to melt without damaging the substrate is provided, wherein the melting the ceramic layer reduces the porosity or seals fissures or columnar grain boundaries. The region of the ceramic layer heated by the localized heating is scanned over the ceramic layer.

Abstract: A portable information handling system keyboard rests on a support surface of a housing with securing actions taken from above the housing, such as by screws that insert through the keyboard and then into the housing. A lattice cover having key openings fits over the keyboard to align adapters of its bottom surface with posts extending from the support surface through openings formed in the keyboard. The adapters snap to the posts to couple the cover against the keyboard so that the cover bottom surface presses the keyboard against the information handling systems upper support surface.

Abstract: In one embodiment, a method for cleaning a showerhead electrode my include sealing a showerhead electrode within a cleaning assembly such that a first cleaning volume is formed on a first side of the showerhead electrode and a second cleaning volume is formed on a second side of the showerhead electrode. An acidic solution can be loaded into the first cleaning volume on the first side of the showerhead electrode. The first cleaning volume on the first side of the showerhead electrode can be pressurized such that at least a portion of the acidic solution flows through one or more of the plurality of gas passages of the showerhead electrode. An amount of purified water can be propelled through the second cleaning volume on the second side of the showerhead electrode, and into contact with the second side of the showerhead electrode.

Abstract: An adapter plate configured to be attachable to a universal platen of a cleaning unit for cleaning upper electrodes from a plasma processing chamber is disclosed, the adapter plate includes a support surface and a mounting surface configured to be fastened to the universal platen of the cleaning unit. The support surface is configured to support an inner electrode or an outer electrode of a showerhead electrode assembly for cleaning upper or lower surfaces thereof. The support surface having a first set of holes configured to receive pins engaged in an upper surface of the inner electrode, a second set of holes configured to receive pins surrounding an outer periphery of the inner electrode, a third set of holes configured to receive pins engaged in an upper surface of the outer electrode, and a fourth set of holes configured to receive pins surrounding an outer periphery of the outer electrode.

Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

Abstract: In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset.

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.

Abstract: In one embodiment, a cleaning assembly may include a modular electrode sealing housing, an acid injection inlet, and a fluid injection inlet. The modular electrode sealing housing may include a high pressure closure member that contains a first cleaning volume and a low pressure closure member that contains a second cleaning volume. The acid injection inlet can be in fluid communication with the first cleaning volume of the high pressure closure member. The fluid injection inlet can be in fluid communication with the second cleaning volume of the low pressure closure member. During normal operation, a showerhead electrode can be sealed within the modular electrode sealing housing such that the first cleaning volume is located on a first side and the second cleaning volume is located on a second side of the showerhead electrode.

Abstract: In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset.

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract: A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen secured to the polishing, which can comprise a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts and mount receptacles can be configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The silicon electrode can be polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode. Additional embodiments are contemplated, disclosed and claimed.