Patents by Inventor Hong Yu

Hong Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LIGHT GENERATING SYSTEM COMPRISING AN ELONGATED LUMINESCENT BODY
    Publication number: 20220066109
    Abstract: The invention provides an elongated luminescent body (100) comprising an elongated support (170) and a coating layer (180), wherein the elongated luminescent body (100) further comprises a body axis (BA), and a length parameter P of a body dimension perpendicular to the body axis (BA), wherein the length parameter P is selected from height (H), width (W) and diameter (D), wherein:—the elongated support (170) comprises a support material (171), a support material index of refraction n1, wherein the support material index of refraction n1 is at least 1.4, a support surface (172), and a support length (L1);—the coating layer (180) is configured on at least part of the support surface (172) over at least part of the support length (L1), wherein the coating layer (180) comprises a coating layer material (181), a coating layer index of refraction n2, wherein coating layer index of refraction n2 is at least 1.
    Type: Application
    Filed: November 25, 2019
    Publication date: March 3, 2022
    Inventors: SIMON EME KADIJK, DIRK KORNELIS GERHARDUS DE BOER, LUDOVICUS JOHANNES LAMBERTUS HAENEN, ABRAHAM VAMATTATHIL SCARIA, JOHANNES MARTINUS JANSEN, JIANG HONG YU, DANIEL ANTON BENOY, CHRISTOPH GERARD AUGUST HOELEN
  • GERM-REPELLENT BOOK AND FOOD PAPER PACKAGING, AND METHOD OF MANUFACTURE
    Publication number: 20220064861
    Abstract: A germ-repellent paper product contains a paper substrate and a germ-repellent overprint varnish. The germ-repellent overprint varnish contains a varnish and a germ-repellent agent. The germ-repellent overprint varnish is coated onto the paper substrate to form a germ-repellent paper product. A method for manufacturing such a germ-repellent paper product is also provided.
    Type: Application
    Filed: April 7, 2020
    Publication date: March 3, 2022
    Applicant: Main Choice Paper Products Limited
    Inventors: Wenjun MENG, Pit Shing TUNG, Wai Hong YU, Mingyu ZHANG
  • Active and dummy fin structures
    Patent number: 11264504
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a scheme of active and dummy fin structures and methods of manufacture. The structure includes: an active fin structure; at least one dummy fin structure running along at least one side of the active fin structure along its length; a fin cut separating the at least one dummy fin structure along its longitudinal axes; and a gate structure extending over the active fin structure and the fin cut.
    Type: Grant
    Filed: January 24, 2020
    Date of Patent: March 1, 2022
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Yanping Shen, Haiting Wang, Hong Yu
  • Wake-on-frame for frame processing devices
    Patent number: 11249541
    Abstract: Systems, methods, and other embodiments associated with wake-on-frame mechanisms are described. According to one embodiment, an apparatus includes a central processing unit (CPU) that performs routing related processing on packets prior to sending the packets to one or more destination devices and a switch configured to send packets to the CPU. The switch is configured to, in response to receiving a new packet for the CPU, determine whether a wake-on-frame mechanism is enabled. When the wake-on-frame mechanism is enabled, the switch causes an interrupt signal to be sent to the CPU, such that receiving the interrupt signal will cause the CPU to wake up. When the wake-on-frame mechanism is disabled, the switch sends the packet to the CPU.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: February 15, 2022
    Assignee: MARVELL ASIA PTE, LTD.
    Inventors: Donald Pannell, Hong Yu Chou
  • METHODS AND SYSTEMS FOR DAMAGE EVALUATION OF STRUCTURAL ASSETS
    Publication number: 20220042875
    Abstract: A plurality of strain values are received from a plurality of sensors permanently attached to an asset configured to carry a load. A strain profile of the asset is monitored based on the plurality of strain values. Additional information about the asset is received. A load rating factor is monitored based on the additional information and the strain profile. An equivalent accumulated damage factor is monitored based on the load rating factor. A remaining life prediction for the asset is calculated based on the strain profile and the equivalent accumulated damage factor.
    Type: Application
    Filed: August 4, 2020
    Publication date: February 10, 2022
    Inventors: Hong Yu, Ajay Raghavan, Peter Kiesel, Kyle Arakaki, Spenser Anderson
  • SYSTEM AND METHOD FOR DETERMINING MANUFACTURING PLANT TOPOLOGY AND FAULT PROPAGATION INFORMATION
    Publication number: 20220035359
    Abstract: A system is provided for determining a manufacturing network topology and fault propagation information. During operation, the system stores data associated with a processing system which includes machines and associated processes, wherein the data includes timestamp information, machine status information, and product-batch information. The system determines, based on the data, a network topology which corresponds to the processing system, wherein the network topology indicates flows of outputs between the machines as part of the processes. The system determines utilization information of a plurality of the machines of the processing system. The system displays one or more of the flows of outputs based on the utilization information, thereby facilitating diagnosis of the processing system.
    Type: Application
    Filed: October 1, 2020
    Publication date: February 3, 2022
    Applicant: Palo Alto Research Center Incorporated
    Inventors: Hong Yu, Ajay Raghavan, Deokwoo Jung, Saman Mostafavi
  • SYSTEM AND METHOD FOR CONSTRUCTING FAULT-AUGMENTED SYSTEM MODEL FOR ROOT CAUSE ANALYSIS OF FAULTS IN MANUFACTURING SYSTEMS
    Publication number: 20220035694
    Abstract: A system is provided for determining causes of faults in a manufacturing system. The system stores data associated with a processing system which includes machines and associated processes, wherein the data includes timestamp information, machine status information, and product-batch information. The system determines, based on the data, a topology of the processing system, wherein the topology indicates flows of outputs between the machines as part of the processes. The system determines information of machine faults in association with the topology. The system generates, based on the machine-fault information, one or more fault parameters which indicates frequency and severity of a respective fault. The system constructs, based on the topology and the machine-fault information, a system model which includes the one or more fault parameters, thereby facilitating diagnosis of the processing system.
    Type: Application
    Filed: October 12, 2020
    Publication date: February 3, 2022
    Applicant: Palo Alto Research Center Incorporated
    Inventors: Hong Yu, Ajay Raghavan, Saman Mostafavi, Deokwoo Jung
  • SYSTEM AND METHOD FOR CASUAL INFERENCE IN MANUFACTURING PROCESS
    Publication number: 20220035354
    Abstract: A system and method are provided for determining a causal inference in a manufacturing process. During operation, the system can receive data associated with a processing system which includes a set of interconnected machines and an associated set of processes. The system can generate, based on the data, a graph indicating flows of outputs between the machines as part of the processes. The system can determine, based on a set of variables, one or more candidate clusters in the graph. The system can perform, based on one or more variables of interest, root cause analysis on the one or more candidate clusters by: applying an additive noise model to prune the one or more candidate clusters from the graph; and determining, based on the pruned graph, a candidate pathway likely to cause an issue in at least one process, thereby facilitating improved efficiency in the processing system.
    Type: Application
    Filed: May 20, 2021
    Publication date: February 3, 2022
    Applicant: Palo Alto Research Center Incorporated
    Inventors: Saman Mostafavi, Ajay Raghavan, Hong Yu, Deokwoo Jung
  • Integrated circuit structure with niobium-based silicide layer and methods to form same
    Patent number: 11239336
    Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure with a niobium-based silicide layer. An IC structure according to the disclosure includes a transistor on a substrate, the transistor including a gate structure above the substrate and a source/drain (S/D) region on the substrate adjacent the gate structure. A niobium-based silicide layer is on at least an upper surface the S/D region of the transistor, and extends across substantially an entire width of the S/D region. An S/D contact to the S/D region is in contact with the niobium-based silicide layer.
    Type: Grant
    Filed: February 12, 2020
    Date of Patent: February 1, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Wei Hong, Yanping Shen, Domingo A. Ferrer, Hong Yu
  • Ethernet PHY-MAC communication with in-band wake-up/sleep commands
    Publication number: 20220026978
    Abstract: An Ethernet communication device includes a data interface and circuitry. The data interface is configured for communicating with a neighbor device. The circuitry is configured to exchange Ethernet data frames with the neighbor device over the data interface, wherein successive data frames are separated in time by an Inter-Packet Gap (IPG) having at least a predefined minimal duration, and to further exchange with the neighbor device, over the data interface, during the IPG between Ethernet frames exchanged on the data interface, a wake-up/sleep command that instructs switching between an active mode and a sleep mode.
    Type: Application
    Filed: October 11, 2021
    Publication date: January 27, 2022
    Inventors: Dance Wu, Christopher Mash, Daryl J. Hoot, Hong Yu Chou
  • PACKET RECEIVING SYSTEM AND PACKET RECEIVING METHOD
    Publication number: 20220030589
    Abstract: A packet receiving system includes a transmitter device, a receiver device, and a communication device. The transmitter device is configured to transmit a plurality of packets periodically according to a packet gap. The receiver device performs a receiving operation for the packets in a plurality of first working time intervals. A sum of lengths of the first working time intervals corresponds to a length of the packet gap. The communication device performs a receiving operation or a transmitting operation in a plurality of second working time intervals. A length of each of the second working time intervals corresponds to the length of the packet gap. Each of the second working time intervals is arranged in between two of the first working time intervals.
    Type: Application
    Filed: December 9, 2020
    Publication date: January 27, 2022
    Inventors: Zhao-Ming Li, Yi-Dong He, Zuo-Hui Peng, Jian-Jun Zhou, Guo-Feng Zhang, Jie-Hong Yu
  • Maintaining a time of day in a physical layer circuit including compensating for drift away from a grandmaster time
    Patent number: 11223439
    Abstract: A physical layer circuit includes registers and a timing circuit. The registers are configured to store a future time of day, a local hardware time and a compensation value. The timing circuit is configured to: determine a relationship between the local hardware time and a grandmaster time; select the future time of day; determine a difference between a local clock and a grandmaster clock and set the compensation value equal to the difference; subsequent to determining the difference, enable maintenance of a current time of day; when the local hardware time matches the future time of day, begin updating the current time of day based on the compensation value to match the grandmaster time; and adjust the compensation value to compensate for drift between the current time of day and the grandmaster time.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: January 11, 2022
    Assignee: Marvell Asia Pte, Ltd.
    Inventors: Ramya Krishna Devineni, Donald Pannell, Hong Yu Chou, Samuel Kong
  • Cotton-free ultrasonic atomizer and electronic cigarette
    Patent number: 11219245
    Abstract: A cotton-free ultrasonic atomizer and electronic cigarette, comprising a tobacco tar cup, an air inlet passage, a tobacco tar smoke outlet passage and an atomization component; the atomization component includes a first atomization piece and a second atomization piece; an atomization cavity is formed between the first atomization piece and the second atomization piece, and an ejection end of the first atomization piece aligns to an atomization surface of the second atomization piece; the first atomization piece communicates with a tobacco tar outlet of the tobacco tar cup, the air inlet passage communicates with the atomization cavity, and the atomization cavity communicates with the tobacco tar smoke outlet passage.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: January 11, 2022
    Assignee: CHINA TOBACCO HUNAN INDUSTRIAL CO., LTD.
    Inventors: Jianfu Liu, Kejun Zhong, Xiaoyi Guo, Wei Huang, Yuangang Dai, Xinqiang Yin, Jianhua Yi, Hong Yu, Yongquan Zhou
  • IC structure with single active region having different doping profile than set of active regions
    Patent number: 11205648
    Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.
    Type: Grant
    Filed: May 5, 2020
    Date of Patent: December 21, 2021
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Anton V. Tokranov, James P. Mazza, Elizabeth A. Strehlow, Harold Mendoza, Jay A. Mody, Clynn J. Mathew, Hong Yu, Yea-Sen Lin
  • DISPOSABLE CIGARETTE CARTRIDGE, ATOMIZER AND ELECTRONIC CIGARETTE
    Publication number: 20210378303
    Abstract: A disposable cigarette cartridge, atomizer and electronic cigarette, wherein the disposable cigarette cartridge comprises a hollow shell, a tobacco tar storage device located in the shell, a suction nozzle connected with the upper end of the shell, a tobacco tar guide seat connected with the lower end of the shell, and a tobacco tar guide body installed on the tobacco tar guide seat; the tobacco tar guide body extends into the tobacco tar storage device; and an air passage is arranged in the shell, one end of the air passage is communicated with the suction nozzle, and the other end of the air passage is communicated with a heating surface of the tobacco tar guide body.
    Type: Application
    Filed: May 2, 2017
    Publication date: December 9, 2021
    Applicant: CHINA TOBACCO HUNAN INDUSTRIAL CO., LTD.
    Inventors: Jianfu LIU, Kejun ZHONG, Xiaoyi GUO, Wei HUANG, Yuangang DAI, Xinqiang YIN, Jianhua YI, Hong YU, Youlin HE, Yongquan ZHOU
  • IC structure with short channel gate structure having shorter gate height than long channel gate structure
    Patent number: 11195761
    Abstract: An integrated circuit (IC) structure includes a long channel (LC) gate structure over a long channel region, the LC gate structure having a first gate height; and a short channel (SC) gate structure over a short channel region, the SC gate structure having a second gate height. The short channel region is shorter in length than the long channel region. The second gate height of the SC gate structure is no larger than the first gate height of the LC gate structure.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: December 7, 2021
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Haiting Wang, Hong Yu, Steven J. Bentley
  • METHODS TO IMPROVE LOCATION/LOCALIZATION ACCURACY IN AUTONOMOUS MACHINES WITH GNSS, LIDAR, RADAR, CAMERA, AND VISUAL SENSORS
    Publication number: 20210372796
    Abstract: Methods and systems include localization of a vehicle localize precisely and in near real-time. As described, localization of a vehicle using a Global Navigation Satellite System (GNSS) can comprise receiving a signal from each of a plurality of satellites of a GNSS constellation and receiving input from one or more sensors of the vehicle. The input from the sensors can indicate current physical surroundings of the vehicle. A model of the current physical surrounding of the vehicle can be generated based on the input from the one or more sensors of the vehicle. One or more multipath signals received from the plurality of satellites can be mitigated based on the model and the vehicle can be localized using the received signals from the plurality of satellites of the GNSS constellation and based on the mitigation of the one or more multipath signals.
    Type: Application
    Filed: June 26, 2019
    Publication date: December 2, 2021
    Inventors: Tong Lin, Hiu Hong Yu, Veera Ganesh Yalla, Farzad Cyrus Foroughi Abari, Andre Michelin, Xu Chen
  • GAS TURBINE ENGINE WITH PARTIAL INLET VANE
    Publication number: 20210372434
    Abstract: Am aircraft engine including an axially extending inlet wall surrounding an inlet flow path. A radial distance between the inlet wall and the inner wall adjacent the fan defines a downstream height of the inlet flow path. A plurality of vanes are circumferentially spaced around the inlet, each of the vanes extending radially inwardly from the inlet wall, a maximum radial distance between a tip of each of the vanes and the inlet wall defining a maximum height of the vane. The maximum height of the vane is at most 50% of the downstream height of the flow path. In another embodiment, the maximum height of the vane is at most 50% of the maximum fan blade span. A method of reducing a relative Mach number at fan blade tips is also discussed.
    Type: Application
    Filed: August 16, 2021
    Publication date: December 2, 2021
    Inventors: Hong YU, Peter TOWNSEND
  • SINGLE FIN STRUCTURES
    Publication number: 20210367060
    Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to single fin structures and methods of manufacture. The structure includes: an active single fin structure; a plurality of dummy fin structures on opposing sides of the active single fin structure; source and drain regions formed on the active single fin structure and the dummy fin structures; recessed shallow trench isolation (STI) regions between the dummy fin structures and the active single fin structure and below a surface of the dummy fin structures; and contacts formed on the source and drain regions of the active single fin structure with a spacing of at least two dummy fin structures on opposing sides of the contacts.
    Type: Application
    Filed: August 10, 2021
    Publication date: November 25, 2021
    Inventors: Haiting Wang, Hong Yu, Zhenyu Hu
  • IC STRUCTURE WITH SINGLE ACTIVE REGION HAVING DIFFERENT DOPING PROFILE THAN SET OF ACTIVE REGIONS
    Publication number: 20210351283
    Abstract: An integrated circuit (IC) structure with a single active region having a doping profile different than that of a set of active regions, is disclosed. The IC structure provides a single active region, e.g., a fin, on a substrate with a first doping profile, and a set of active regions, e.g., fins, electrically isolated from the single active region on the substrate. The set of active regions have a second doping profile that is different than the first doping profile of the single active region. For example, the second doping profile can have a deeper penetration into the substrate than the first doping profile.
    Type: Application
    Filed: May 5, 2020
    Publication date: November 11, 2021
    Inventors: Anton V. Tokranov, James P. Mazza, Elizabeth A. Strehlow, Harold Mendoza, Jay A. Mody, Clynn J. Mathew, Hong Yu, Yea-Sen Lin